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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE T25 4 ko Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - diode t25 4 g0

Abstract: DIODE T25 4 ko T-75 High voltage diode figure T-75 DIODE T-75 High voltage diode
Text: the VCO and the phase comparator. 4 ) The VCO output frequency division can be selected on the SELECT , 3760MHz 1/ 4 -2075 SSOP-B14 Absolute maximum ratings (Ta=25) Symbol Supply voltage Input voltage , Power dissipation *1 *2 *3 * 4 Operating is not guaranteed. In the case of exceeding Ta = 25, 4.0mW , to "H" and the output frequency is reduced to 1/ 4 , the frequency range and the frequency sensitivity will be all reduced to 1/ 4 . www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/18


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PDF BU2373FV BU2374FV 11069EBT07 BU2374FV) R1120A diode t25 4 g0 DIODE T25 4 ko T-75 High voltage diode figure T-75 DIODE T-75 High voltage diode
2011 - Not Available

Abstract: No abstract text available
Text: lt A 4 Max. voltage Vt V 9.8 Thermistor Rt ( KO )/β(25°C) 10±5%/3477 , Laser Diodes 635 nm ~ 650 nm HHL Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD-65-10-400-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , Package Fiber-Coupled Laser Diode BLD-63-05-400-10-F-f-c-l-22 BLD


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PDF BLD-63-05-400-10-F-f-c-l-22 BLD-65-10-400-10-F-f-c-l-22
2011 - Not Available

Abstract: No abstract text available
Text: Laser Diodes 808 nm HHL Packaged Laser Diode BLD-81-tt-2W-10-F-f-c-l-22 BLD-81-tt-5W-10-F-f-c-l-22 BLD-81-tt-8W-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , www.lasercomponents.fr Laser Diodes 808 nm HHL Packaged Laser Diode Symbol Unit BLD , V 9.8 Thermistor Rt ( KO )/β(25°C) 10±5%/3477 Operation temperature Top °C


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PDF BLD-81-tt-2W-10-F-f-c-l-22 BLD-81-tt-5W-10-F-f-c-l-22 BLD-81-tt-8W-10-F-f-c-l-22
2011 - Not Available

Abstract: No abstract text available
Text: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting , diode chip into an output fiber with small core diameter by using special micro optics. Inspecting and , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode , Vre V 2 Current lmo µA 200 ~ 2000 Max. current lt A 4 Max. voltage


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PDF BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W
2011 - Not Available

Abstract: No abstract text available
Text: Laser Diodes 976 nm Butterfly Packaged Laser Diode BLD-98-tt-3W-14-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in , by transforming the asymmetric radiation from the laser diode chip into an output fiber with small , Packaged Laser Diode Specifications (25 °C) Unit BLD-98-tt-3W-14-F-10-c-l-22 CW-output power , Thermistor Rt ( KO )/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30


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PDF BLD-98-tt-3W-14-F-10-c-l-22
Marking Code m sc70-6

Abstract: jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 Marking Code m sc70-6 .25 bs sc70 F63TNR
Text: Components Leader Tape 500mm minimum or 125 empty pockets July 1999, Rev. C m 3HbIìti7l4 Q0fc»2öö 4 T25 , continuous, 0.65 A peak. Rdsiom, = 4 ß @ VGS= 4.5 V, RDS(ON) = 5 Î2 ( ! V„s= 2.7 V. Very low level , . m SC70-6 m S.p."i>OI " I! SO-8 SOT-223 SC70-6 The pinouts are symmetrical; pin 1 and 4 are , 4.5V, Id = 0.22 A 2.6 4 £2 Tj =125°C 5.3 7 VGS = 2.7V, Id = 0.19A 3.7 5 '□(ON , - On Rise Time 4.5 10 ns *D(on) Tum - Off Delay Time 4 8 ns t, Tum-Off Fall Time 3.2 7 ns


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PDF FDG6301N 34bTb SC70-6 331-ryp SC-70, Marking Code m sc70-6 jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 Marking Code m sc70-6 .25 bs sc70 F63TNR
2011 - Not Available

Abstract: No abstract text available
Text: Laser Diodes 405nm Butterfly Packaged Diode Laser BLD-41-10-100-14-F-6-c-l-22 LASER COMPONENTS High Power Diode Laser Modules are manufactured by adopting specialized fiber-coupling techniques , achieved by transforming the asymmetric radiation from the laser diode chip into an output fiber with , www.lasercomponents.fr Laser Diodes 405nm Butterfly Packaged Diode Laser BLD , ( KO )/β(25°C) 10±5%/3477 Operation temperature Top °C 10 ~ 30 Storage temperature


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PDF 405nm BLD-41-10-100-14-F-6-c-l-22
2012 - DIODE T25 4 k0

Abstract: DIODE T25 4 ko 3601P Diode MARKING t40 DIODE T25-4-bo
Text: TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp® Description The , Minimum Typical Maximum 33 Units V V T=25 OC T=-40 OC to 125 OC T=25 OC T=125 OC 36 34 45 1 , VF VC Cj VRWM = 33V µA V V pF IF= 200mA IPP = 2A, tp = 1.2/50µs VR = 0V, f = 1MHz T=25 OC T , Voltage -VC (V) 60 75 Voltage (V) 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 50 50 40 25 , Parameters: tr = 8µs; td = 20µs Junction Capacitance vs. Reverse Voltage 30 TA = 25OC f = 1 MHz 4


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PDF 3601P Clamp3601P 260mA 200mA) uClamp3601P DIODE T25 4 k0 DIODE T25 4 ko Diode MARKING t40 DIODE T25-4-bo
2012 - Not Available

Abstract: No abstract text available
Text: µClamp3601P TVS Diode for Proximity Switch Input Protection PROTECTION PRODUCTS - MicroClamp , Conditions Minimum T=25 OC 34 Units V 36 T=-40 OC to 125 OC Maximum 33 VRWM , Cj Reverse Breakdown Voltage © 2012 Semtech Corporation VR = 0V, f = 1MHz 45 T=25 OC 1 T=125 OC 5 T=25 OC 25 T=-40 OC to 125 OC 35 2 V µA pF , Current 50 40 50 25 30 0 0 1 2 3 Peak Pulse Current - IPP (A) 4 5 0


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PDF Clamp3601P 3601P Clamp3601P 260mA
2011 - Not Available

Abstract: No abstract text available
Text: .) Typ. Spectrum of 976 nm diode laser ( T=25 °C) 961 nm 3 Germany & Other Countries Laser , Laser Diodes 976 nm Fiber Detachable Laser Diode BLD-98-tt-3W-14-C BLD-98-tt-7W-14-C BLD-98-tt-10W-14-C High Power Laser Diode Modules are manufactured by adopting specialized , quality. The products are achieved by transforming the asymmetric radiation from the laser diode chip , info@lasercomponents.fr www.lasercomponents.fr Laser Diodes 976 nm Fiber Detachable Laser Diode Symbol Unit


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PDF BLD-98-tt-3W-14-C BLD-98-tt-7W-14-C BLD-98-tt-10W-14-C
2011 - Not Available

Abstract: No abstract text available
Text: ) Intensity (arb.) Typ. Spectrum of 976 nm Laser Diode ( T=25 °C) 961 nm 3 Germany & Other Countries , -98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D High Power Laser Diode Modules are , radiation from the laser diode chip into an output fiber with small core diameter by using special micro , lt A Max. voltage Vt V 9.8 Thermistor Rt ( KO )/β(25°C) 10±5%/3477 , 400 500 600 7 3.0 2.5 2.0 1.5 1.0 6 5 4 3 2 0.5 0.0 0 1 0.0 0.5


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PDF BLD-98-tt-3W-16-F-f-c-l-D BLD-98-tt-7W-16-F-f-c-l-D BLD-98-tt-10W-16-F-f-c-l-D
diode t25 4 F0

Abstract: DIODE T25 4 ko
Text: ]. 240° C< 1 ) Input Diode Power Dissipation , . 300mW( 4 > Voltage at Output Lead (Open Collector V Diode Forward D.C. Current. 40 mA Diode Reverse D.C. Voltage , soldering. (2) Derate linearly 2.22 mW/° C above 25° C. (3) Derate linearly 4.44 mW/° C above 25° C. ( 4


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PDF OPB930L OPB930L, QPB940L OPB93 OPB94 /OPB940W diode t25 4 F0 DIODE T25 4 ko
Not Available

Abstract: No abstract text available
Text: Input Diode Current (l,K) V, < -0.5V Source Current (JEDEC Method 17) -20 mA V, > Vcc + 0.5V , -0.5V to Vcc +0.5V DC Output Diode Current (lOK) VQ < -0.5V -2 0 mA V0 Vcc + 0.5V +20 mA , Operating Temperature (TA) ±12.5 mA - 4 0 ‘C to +85‘C Input Rise and Fall Time (tr/tf) DC , High Level Input Voltage 4 .5 -5 .5 V,L Low Level Input Voltage High Level Output Voltage T a = - 4 0 *C to +85'C Typ 4 .S -5.5 VOH NC7ST86 T a = +25*C < < o NC7ST86


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PDF NC7ST86 NC7ST86 MM74HCT
2008 - DIODE T25 4

Abstract: DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02R is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02R 5/50ns) DIODE T25 4 DIODE T25-4 DIODE T25 DIODE T25 4 C DIODE T25-4-I6 DIODE T25-4-B4
TA8435

Abstract: toshiba ta8435h ta8435h DIODE T28 HZIP25-P-1.27 3GWJ42 diode w1
Text: tO *2 *3 * 4 *5 t7 t8 tg ti0 tn ti2 ti3 ti4 ti5 tig tiy ti8 tig t2Q t2i t22 t23 t24 t25 t26 t27 t28 , Resistor equipped with RESET Terminal : R = 100 kO (Typ.) • Output Monitor available with MO. lo (mo) = , FUNCTIONAL DESCRIPTION 1 SG Signal GND. 2 RESET L : RESET. 3 ENABLE L : ENABLE, H : OFF. 4 ose Chopping , supply terminal. 25 NC No connection. 1999-08-05 4 /25 TOSHIBA TA8435H OUTPUT CIRCUIT DECODER 'REF , ® and R1 is on-chip 10 kO resistor. Therefore, OSC frequency is calculated as follows. 1.4 tl =


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PDF TA8435H TA8435H HZIP25-P HZIP25-P-1 76TYP 2-575TYP 36-5MAX TA8435 toshiba ta8435h DIODE T28 HZIP25-P-1.27 3GWJ42 diode w1
RCA-CA3127

Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Text: diode . The substrate (terminal 5) must be connected to the most negative point in the external circuit , , lE =0 20 60 - V Emitter-to-Base Breakdown Voltage* lE = 10 MA, IQ = 0 4 5.7 - V Col , VC| = 6V,f = 1 MHz - Fig- - pF Emltter-to-Base Capacitance VBE = 4 V, f= 1 MHz - 5 - pF Voltage Gain VCE = 6 V, f = 10 MHz RL= 1 kO , lc= 1 mA - 28 - dB Power Gain Cascode Configuration f = 100 MHz , . 4 — Gain-bandwidth product as a function of collector current. Fig. 3 — 1/f noise figure as a


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PDF DQ14t43 CA3127 RCA-CA3127* CA3127 100-MHz RCA-CA3127 rca 0190 transistor iY22 rca 0190 6 "transistor arrays" ic currentmirror
2009 - ULTVSJJ5VCESGP

Abstract: diode t25 4 A8 DIODE T25 4 diode T25-4
Text: = 5V,Vpin7 = 0V,VIN = 2.5V,f = CIN_1 Capacitance-1 1MHz, T=25 oC, pin 1~ 4 to pin 7. Channel , ULTVSJJ5VCESGP is a design which includes surge rated diode arrays to protect high speed data interfaces , unique design of clamping cell which is an equivalent TVS diode in a single package. During transient , , Level 4 (15kV air, 8kV contact discharge). ULTVSJJ5VCESGP ESD Protect for Super Speed , voltage  Array of surge rated diodes with internal equivalent TVS diode  Solid-state


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PDF 100ns ULTVSJJ5VCESGP diode t25 4 A8 DIODE T25 4 diode T25-4
2010 - ULTVSQB5VCESGP

Abstract: No abstract text available
Text: ¬ Array of surge rated diodes with internal equivalent TVS diode  Solid-state silicon-avalanche and , is a design which includes ESD rated diode arrays to protect high speed data interfaces. The , clamping cell which is an equivalent TVS diode in a single package. During transient conditions, the , operation. ULTVSQB5VCESGP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (ï , 10 GND 8 NC 7 VDD I/O-6 9 2 I/O-5 6 I/O- 4 2 island NC 1 9


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PDF 800TYP. 031TYP. 600TYP 023TYP. 400TYP 015TYP. 200MIN. 008MIN ULTVSQB5VCESGP
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , rated diode arrays to protect high speed data interfaces. The AZ1045-02J has been specifically , equivalent TVS diode in a single package. During transient conditions, the steering diodes direct the , the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). , 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3 2


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PDF AZ1045-02J AZ1045-02J arrays300 150mm.
2008 - Not Available

Abstract: No abstract text available
Text: ESD rated diodes with internal equivalent TVS diode Solid-state silicon-avalanche and active circuit , design which includes ESD rated diode arrays to protect high speed data interfaces. The AZ1045-02J has , cell which is an equivalent TVS diode in a single package. During transient conditions, the steering , -02J may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air,  , Circuit Diagram NC 5 4 1 2 3 I/O 1 1 NC 6 5 VDD GND I/O 2 3


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PDF AZ1045-02J AZ1045-02J
2008 - Not Available

Abstract: No abstract text available
Text: 4 (± 15kV air, ±8kV contact discharge). IEC 61000-4-2 (ESD) ±16kV (air/contact) IEC , clamping voltage Array of surge rated diodes with internal equivalent TVS diode Small package saves , Configuration Description I/O 2 Revision 2008/12/01 ©2008-2009 Amazing Micro. NC 6 5 4 1 AZ1115-02S is a high performance design which includes surge rated diode arrays to protect , which is an equivalent TVS diode in a single package. During transient conditions, the steering diodes


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PDF AZ1115-02S AZ1115-02S 5/50ns) silicon024 113XY
2007 - Not Available

Abstract: No abstract text available
Text: Clamping Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping , Rdynamic_VDD CIN CCROSS △CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 μA VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 , Pin 4 IPP=5A, tp=8/20μs, T=25 oC Any Channel pin to Ground IEC 61000-4-2 +6kV, T=25 oC, Contact , AZC015-02N may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, Â


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PDF AZC015-02N AZC015-02N 5/50ns) C03XY.
2008 - c09x

Abstract: AZC015-02N SOT143-4L DIODE T25 4
Text: Voltage ELECTRICAL CHARACTERISTICS CONDITIONS Pin 4 to pin 1, T=25 oC VCL ESD Clamping Voltage , CIN MIN TYP C C V MAX 5 UNITS V VRWM = 5V, T=25 oC, Pin 4 to pin 1 5 A VPin 4 = 5V, VPin 1 = 0V, T=25 oC, VCH = 0 ~ 5V IBV = 1mA, T=25 oC Pin 4 to Pin 1 1 A 9 V 0.8 1 V 8.1 9 V 6 IF = 15mA, T=25 oC Pin 1 to Pin 4 IPP=5A, tp=8/20s, T=25 , used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (± 15kV air, ±8kV contact


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PDF AZC015-02N AZC015-02N 5/50ns) 8/20s) techno09 C03XY. c09x SOT143-4L DIODE T25 4
2008 - Not Available

Abstract: No abstract text available
Text: equivalent TVS diode Solid-state silicon-avalanche and active circuit triggering technology Back-drive , Panels Ethernet port: 10/100 Mb/s Peripherals AZC299-02S is a design which includes ESD rated diode , steering diodes and a unique design of clamping cell which is an equivalent TVS diode in a single package , of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram I/O 1 5 4 1 2 3 I/O 1 1&6 I/O 2 6 5 VDD GND I/O 2 3&4


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PDF AZC299-02S 5/50ns) C29XY
2009 - azc199

Abstract: AZC199-02S
Text: diode Solid-state silicon-avalanche and active circuit triggering technology Green part , rated diode arrays to protect high speed data interfaces. The AZC199-02S has been specifically , diode in a single package. During transient conditions, the steering diodes direct the transient to , 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Pin Configuration Circuit Diagram 1 , IBV = 1mA, T=25 oC, Pin 1/2 to Pin 3 VF IF = 15mA, T=25 oC, Pin 3 to Pin1/2 MAX UNITS 1 7


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PDF AZC199-02S 5/50ns) C11XY azc199 AZC199-02S
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