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Part Manufacturer Description Datasheet Download Buy Part
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE S3V 12 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE S3V

Abstract: DIODE S3V 50 DIODE S3V 07 KIA6924S DIODE S3V 03 S3V 05 S3V 03 S3V 15 diode
Text: capacitance diode voltage.) 1994. 11. 11 Revision No : 0 |/Cr 12 / 12 , KEC 1/ 12 KIA6924S MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage , |/Cr 2/ 12 KIA6924S TEST CIRCUIT 1. TEST CIRCUIT 2. Read the Voltage of pin© at ICc=20mA Note 5) Terminal Voltage (Vi, V2, V3, V6) Si-^D, S2^ON, S3^V (SW positions) Read each terminal voltage at the above SW position. 1994. 11. 11 Revision No : 0 |/Cr 3/ 12 KIA6924S Note 6) Trigger sensitivity (A


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PDF KIA6924S KIA6924S 120mV) KIA6924S, DIODE S3V DIODE S3V 50 DIODE S3V 07 DIODE S3V 03 S3V 05 S3V 03 S3V 15 diode
DIODE S3V 03

Abstract: DIODE S3V 07 DIODE S3V DIODE S3V 09 KIA6924S DIODE S3V 7 DIODE S3V 40 DIODE S3V 77 S3V Diode DIODE S3V 50
Text: (SUBPOTENTIAL) —VW- 77777 ï M 77777 AC 100V —o 1994. 11. 11 Revision No : 0 KEC 1/ 12 KIA6924S , 10 45 50 - dB Muting Time at Power ON M.T - 1.8 - sec 1994. 11. 11 Revision No : 0 KEC 2/ 12 , (Vi, V2, V3, V6) Si-^D, S2^ON, S3^V (SW positions) Read each terminal voltage at the above SW position. 1994. 11. 11 Revision No : 0 KEC 3/ 12 KIA6924S Note 6) Trigger sensitivity (A), Trigger current (A) <±TRIG-A, ±(I-TRIG-A)> Si->A, S2^ON, S3^V (SW position) Turn VOL gradually to increase


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PDF KIA6924S KIA6924S 120mV) KIA6924S, DIODE S3V 03 DIODE S3V 07 DIODE S3V DIODE S3V 09 DIODE S3V 7 DIODE S3V 40 DIODE S3V 77 S3V Diode DIODE S3V 50
DIODE S3V 52

Abstract: DIODE S3V KIA6924S S3V Diode
Text: Revision No : 0 KEC 1/ 12 KIA6924S MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply , KEC 2/ 12 KIA6924S TEST CIRCUIT 1. TEST CIRCUIT 2. i50kn i.5kn VCC=18V f=lKHz 500mVrms Note 4 , =2QmA Note 5) Terminal Voltage (Vi, V2, V3) V6) Si^D, Sz-^ON, S3^V (SW positions) Read each terminal voltage at the above SW position. 1994. 11. 11 Revision No : 0 KEC 3/ 12 KIA6924S Note 6) Trigger sensitivity (A), Trigger current (A) <±TRIG-A, ±(I-TRIG-A)> (SW position) Si—»A, S2-^ON, S3^V Turn VOL


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PDF KIA6924S KIA6924S KIA6924S, DIODE S3V 52 DIODE S3V S3V Diode
pj42

Abstract: schematic diagram lcd monitor chimei 1TP1-6 PTC SY 16P DIODE S3V 43 DIODE S3V 81 MDC56S-I S3V16 MITAC MPU BG54S
Text: - 3 1.2 System Hardware Parts , - 141 12 . Reference Material , sub-systems and functions. 4 8677 N/B MAINTENANCE 1.2 Hardware System System parts CPU: Using Intel , with integrated on-die termination to support Intel Pentium 4 processors. SiS650 provides a 12 -level In-Order-Queue to support maximum outstanding transactions up to 12 . It integrated a high performance 2D/3D


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PDF SiS961 SiS301LV PCI1410 ICS952001 pj42 schematic diagram lcd monitor chimei 1TP1-6 PTC SY 16P DIODE S3V 43 DIODE S3V 81 MDC56S-I S3V16 MITAC MPU BG54S
lcd CP5 94V0

Abstract: CP5 94V0 sumida Inverter notebook cp5 94v-0 ph163112 TDA 1808 VR501 04-6214-008-000-800 lcd hyundai DIODE S3V 78
Text: -1.1 1.2 1.3 1.4 Introduction , - 12 . Reference Material , Lock LEDs 5 M762 N/B Maintenance 1.2 System Architecture 1.2.1 Block Diagram (without Power , compliant Support up 1024*768 resolution(Max1920x1440) PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SIGNAL , (PCMCIA Controller) & TI TPS2211 (Power Switch) 12 M762 N/B Maintenance 1.2.2.6 Graphical


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PDF uFC-PGA478 SiS630ST Slot1/Socket370 PCI1410 FW323 IEEE1394 lcd CP5 94V0 CP5 94V0 sumida Inverter notebook cp5 94v-0 ph163112 TDA 1808 VR501 04-6214-008-000-800 lcd hyundai DIODE S3V 78
2010 - DIODE S3V

Abstract: DIODE S3V 40 S3V Diode J534 DIODE S3V 25 DIODE S3V20 S3V60 S3V 63 63 marking code diode S3V20
Text: Rectifier Diode Axial Diode OUTLINE Unit : mm Weight : 1.06g typ. PackageAX14 600V 3.5A 26.5 · · Feature 26.5 7 Marking · High-Reliability · High Voltage S3V 63 Type No. 1.4 S3V60 4.4 - Color code Cathode band Red : S3V20 Blue : S3V60 Date code Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification


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PDF PackageAX14 S3V60 S3V20 Volta5150 1mst10msTj J534-1 DIODE S3V DIODE S3V 40 S3V Diode J534 DIODE S3V 25 DIODE S3V20 S3V60 S3V 63 63 marking code diode S3V20
diode S3V 68

Abstract: DIODE S3V 75 DIODE S3V DIODE S3V 66 DIODE S3V 50 DIODE S3V 08 S3V 68 DIODE S3V 40 S3V 84 S3V Diode
Text: = 25 Vdc Min @> 10^1 A lR = .02 H A Max @ 20 Vdc Diode Cap. (CT) Typ @ 2V/1 MHz Diode Cap. (CT , /Max Min. ZC898 4.4 0.8 4.0/5.5 250 ZC899 6.6 1.2 4.0/5.5 250 ZC800 10 1.8 5.0/6.5 250 ZC801 15 2.7 , ) < S3V , 20Mhz MATCHING -To order sets matched to ±3%, specify number of diodes per set and add Suffix M , 2.8:1 100 ZC714 100.0 2.8:1 100 •To order device? wit» CT Nom ±5% add Suffix B. 12 % add Suffix


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PDF ZC700 ZC714, ZC800 ZC899, diode S3V 68 DIODE S3V 75 DIODE S3V DIODE S3V 66 DIODE S3V 50 DIODE S3V 08 S3V 68 DIODE S3V 40 S3V 84 S3V Diode
R2M diode

Abstract: Diode R2M DIODE S3V RN73B s3v 73 diode S3V Diode AAJFF S3V 15 diode an6270 DIODE S3V 97
Text:  Tn^tl AN6270 AN6270 h fy+ffl ^EttHIîJ/Reel Motor Driver Circuit for Cassette Decks ■ft * AN6270 U, m * mt ¿ * * * « e t. ■« a ■Feature» • Bi-Directional reel motor driver with brake • Plonger driver ai lb diode for load lead-in aurge protection • Fewer external , 3 ft* LED 3 Output 12 + 1 Art Planter 1 Input 4 Plunger 1 Output 13 LED 3 A» LED 3 Input S , : T„r -20- + 7S •c T.»« — 55 — +130 •c ffil ) Vccw-Vcaj«> S3V i£2) WW* Vccm t &ÌS â


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PDF AN6270 AN6270 16-Lcai AN627O fj-12V, V44ll, AM27Q R2M diode Diode R2M DIODE S3V RN73B s3v 73 diode S3V Diode AAJFF S3V 15 diode DIODE S3V 97
TX38D85VC1CAA

Abstract: SD6109 DIODE S3V 81 SiS900 lan s3v83 30-pin connector for LVDS hannstar foxconn TM41PUM220 orion crt monitor circuit diagram mitsumi D353G
Text: Specification - 3 1.1 1.2 1.3 1.4 , - 145 12 . Reference , for each individual sub-systems and functions. 1.2 Hardware System 1.2.1 System parts Central , Power Management Meets ACPI 1.0 Requirements Meets APM 1.2 Requirements ACPI Sleep States Include S1, S3 , data transfer Distributed DMA Support 12 7521Plus / N N/B MAINTENANCE Integrated Interrupt


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PDF 7521Plus TX38D85VC1CAA SD6109 DIODE S3V 81 SiS900 lan s3v83 30-pin connector for LVDS hannstar foxconn TM41PUM220 orion crt monitor circuit diagram mitsumi D353G
2010 - Not Available

Abstract: No abstract text available
Text: アキシャルダイオード Rectifier Diode Axial Diode ■外観図 OUTLINE Unit : mm Weight : 1.06g typ.) ( Package:AX14 600V 3.5A ①特長 26.5 • è€æ¹¿æ€§ã«å„ªã‚Œé«˜ä¿¡é ¼æ€§ • 高耐圧 Feature 26.5 7 +①* 捺印面展開図  Marking • High-Reliability • High Voltage ② * S3V 63 品名略号 Type No. φ1.4 S3V60 φ4.4 ②− 極性および級色別 Color code Cathode band Red : S3V20 Blue : S3V60 ロã


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PDF S3V60 S3V20
76429S

Abstract: DIODE S3V 78 DIODE S3V 46 DIODE S3V 75
Text: 0V (Figure 12 ) l D = 250)iA, VGS = OV , T c = -40°C (Figure 12 ) Zero Gate Voltage Drain C urrent !DSS , Drain Diode Specifications PARAM ETER Source to Drain Diode Voltage SYM B OL VsD lSD = 44A lSD = 22A , io v / VGS = 5V jC - VGS = 4V VGS = 3. 5V VG S=3V PULSE DUP ATION = 80|iS DUTY CYCL E = , 12 . NO R M A LIZE D DRAIN TO SO UR CE BREAKDOW N VOLTAGE vs JU N C TIO N TE M PERA TUR E 0 Vo s


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PDF HUF76429P3, HUF76429S3S -220AB -263AB F76429P3 F76429S3S F76429S3S 76429S DIODE S3V 78 DIODE S3V 46 DIODE S3V 75
DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Text: Drain Current © 22 PD e Te - 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/K , Avalanche Current CD 5.6 A EAR Repetitive Avalanche Energy (D 15 mj dv/dt Peak Diode Recovery dv/dt , 1.0 MHz ^rss Reverse Transfer Capacitance - 80 - See Fig. 5 CDC Drain-to-Case Capacitance - 12 - MÔSSHS2 OOlTHbl 117 I-398 I«R IRFMG50 Device Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current (Body Diode ) - - 5.6 A


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PDF IRFMG50D IRFMG50U O-254 mil-8-19s00 I-404 DIODE S3V 70 DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 LSE 0149
S4-24V

Abstract: S2-L2-12V S3V 84 diode S3V 68 S3V Diode S-L1-24V V221S DIODE S3V 08
Text: 3 4 5 Contact current, A 6 16 14 12 Release time (with diode ) 10 Max. 8 , 12 10 (with diode ) 8 6 Max. 4 Min. 2 Max. Min. +30 Single side stable Drop-out , ) Expected life (min. operations) Approx. 12 g .42 oz 1 ms Gold clad silver alloy Approx. 3pF Approx , Approx. 200 Approx. 100 Approx. 200 750 Vrms 1,000 Vrms Release time (without diode )*3 (at , 3, 5, 6, 12 , 24, 48 Notes: 1) Standard packing; Carton 50 pcs. Case 500 pcs. 2) UL/CSA approved


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PDF
DIODE S3V

Abstract: DIODE S3V 09 14103BEA M38510/14103BEA soc 500ma vcr 2020 SG2002 SG2000 m38510/14103 LF350
Text: -1«mA 12 V 5.0 V ta — T^ VCE = 2V, L = 200mA 6.0 V V^.2V, (¡-276mA 7.0 V VCE = 2V , 1000 ns Tum-Off (TPHL), Al Ta-25"C 250 1000 nt Clamp Diode Leakage Current (lR) All V„ = 50V 50 HA Clamp Diode Forward Voltage (Vp) AN ■■l^* *-SSOHIA■1.7 2.0 V Note 3. These , ^ Diode Leakage Current (l„) CtonvOiodtPofwarti Vortage (VF> S02Û 12 SG2013 SÛ2014 SG2015 All SG2012 SG2013 SG2014 SG2015 602011 All All


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PDF SG2000 500mAcurrent 16-PIN SG2XXXJ/883B 20-PIN SG2XXXL/883B DIODE S3V DIODE S3V 09 14103BEA M38510/14103BEA soc 500ma vcr 2020 SG2002 m38510/14103 LF350
2003 - k302p

Abstract: IFT30 K3020PG K3022P K3022 K3023
Text: I FTrel­ RelativeThreshold Forward Current 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V S=3V RL , infrared-emitting diode in a 6-lead plastic dual inline package. VDE Standards These couplers perform safety , within dv/dt ratings Coupler Parameter Emitting diode trigger current Test condition VS = 3 V, RL = , 10 12 11 Typ. Max Unit kV kV kV 109 675 600 525 450 375 300 225 150 75 0 0 95 10925 Psi (mW) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM I si


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PDF K3020P/ K3020PG 94-VO D-74025 04-Dec-03 k302p IFT30 K3022P K3022 K3023
2008 - K3021PG

Abstract: DIODE S3V 12 DIODE S3V 08 DIODE S3V 07 DIODE S3V 70
Text: diode in a 6-lead plastic dual inline package. Document Number 83505 Rev. 1.9, 26 , Parameter Emitting diode trigger current Test condition VS = 3 V, RL = 150 Part K3020P K3020PG K3021P , Vpd RIO RIO RIO Min 1.6 6 1.3 10 12 Typ. Max Unit kV kV kV 1011 109 VIOTM 675 , s tstres = 12 s VPd VIOWM VIORM I si (mA) 0 13930 t3 ttest t4 t1 tTr = 60 s t2 , 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ­30 ­20 ­10 0 10 20 30 40 50 60 70 80 I Fi I FT I T


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PDF K3020P/ K3020PG 94-VO 18-Jul-08 K3021PG DIODE S3V 12 DIODE S3V 08 DIODE S3V 07 DIODE S3V 70
2005 - 7402 TTL

Abstract: DIN EN 50014 STANDARD DATA SHEET 7402 phototransistor microwaves phototriac K3010P K3010PG VDE0884 K3012PG
Text: ) 250 1.4 V S=3V RL=150i 1.3 1.2 1.1 1.0 0.9 0.8 0.7 200 150 100 I FT=15mA 50 , phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline , 8 15 mA K3010PG Emitting diode trigger current Min IFT 8 15 mA K3011P , ) VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 675 600 Psi (mW) 525 , 1.4 I Fi I FT I T=100mA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ­30 ­20 ­10 0 10 20 30 40


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PDF K3010P/ K3010PG 94-VO 0303/IEC 2002/95/EC 08-Apr-05 7402 TTL DIN EN 50014 STANDARD DATA SHEET 7402 phototransistor microwaves phototriac K3010P VDE0884 K3012PG
2003 - DIN EN 50014 STANDARD

Abstract: K301P
Text: I FTrel­ RelativeThreshold Forward Current 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V S=3V RL , of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 , voltage must be applied within dV/dt ratings Coupler Parameter Emitting diode trigger current Test , , t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Psi (mW) VPd VIOWM VIORM I si (mA , device 300 Phototransistor 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 I Fi I FT I T=100mA 200


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PDF K3010P/ K3010PG 94-VO 0303/IEC D-74025 04-Dec-03 DIN EN 50014 STANDARD K301P
2004 - DIODE S3V 94

Abstract: DIN EN 50014 STANDARD
Text: phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline , Test voltage must be applied within dV/dt ratings Coupler Parameter Emitting diode trigger current , Unit kV kV kV Vpd RIO RIO RIO VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s , Phototransistor 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ­30 ­20 ­10 0 10 20 30 40 50 60 70 80 I Fi I FT I T , 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 1 20 96 11924 30 40 50 60 70 80 90 100 ( °C


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PDF K3010P/ K3010PG 94-VO 0303/IEC 2002/95/EC 2002/96/EC D-74025 26-Oct-04 DIODE S3V 94 DIN EN 50014 STANDARD
2004 - DIN EN 50014 STANDARD

Abstract: DIODE S3V vishay RELAY VISHAY VDE0884 K3020P VDE0884 K3022P K3021P K3020PG DIODE S3V 06
Text: 50 60 70 80 90 100 ( °C ) 250 1.4 V S=3V RL=150i 1.3 1.2 1.1 1.0 0.9 0.8 , infrared-emitting diode in a 6-lead plastic dual inline package. Document Number 83505 Rev. 1.9, 26 , K3020PG Emitting diode trigger current Min IFT 15 30 mA K3021P 15 mA 8 15 , VIOTM 6 kV Vpd Partial discharge test voltage Routine test Typ. 1.3 kV 12 , 10 s tstres = 12 s 675 600 Psi (mW) 525 VPd 450 VIOWM VIORM 375 300 225 I


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PDF K3020P/ K3020PG 94-VO D-74025 26-Oct-04 DIN EN 50014 STANDARD DIODE S3V vishay RELAY VISHAY VDE0884 K3020P VDE0884 K3022P K3021P DIODE S3V 06
2004 - Not Available

Abstract: No abstract text available
Text: ­ RelativeThreshold Forward Current 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V S=3V RL=150i ITM ­ On­State Current ( mA , of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 , voltage must be applied within dV/dt ratings Coupler Parameter Emitting diode trigger current Test , 150 75 0 0 95 10925 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Psi (mW) VPd , Coupled device 300 Phototransistor 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 I Fi I FT I T=100mA 200


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PDF K3010P/ K3010PG 94-VO 0303/IEC D-74025 26-Apr-04
2005 - 7402 TTL

Abstract: TTL 7402 K3020 DIN EN 50014 STANDARD K3020P phototriac K303 K3020PG K3021P K3022P
Text: 50 60 70 80 90 100 ( °C ) 250 1.4 V S=3V RL=150i 1.3 1.2 1.1 1.0 0.9 0.8 , infrared-emitting diode in a 6-lead plastic dual inline package. Document Number 83505 Rev. 1.9, 26 , K3020PG Emitting diode trigger current Min IFT 15 30 mA K3021P 15 mA 8 15 , VIOTM 6 kV Vpd Partial discharge test voltage Routine test Typ. 1.3 kV 12 , 10 s tstres = 12 s 675 600 Psi (mW) 525 VPd 450 VIOWM VIORM 375 300 225 I


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PDF K3020P/ K3020PG 94-VO 08-Apr-05 7402 TTL TTL 7402 K3020 DIN EN 50014 STANDARD K3020P phototriac K303 K3021P K3022P
2004 - K3023

Abstract: K3022 K3021
Text: ­ RelativeThreshold Forward Current 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V S=3V RL=150i ITM ­ On­State Current ( mA , infrared-emitting diode in a 6-lead plastic dual inline package. VDE Standards These couplers perform safety , within dv/dt ratings Coupler Parameter Emitting diode trigger current Test condition VS = 3 V, RL = , 10 12 11 Typ. Max Unit kV kV kV 109 675 600 525 450 375 300 225 150 75 0 0 95 10925 Psi (mW) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM I si


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PDF K3020P/ K3020PG 94-VO D-74025 26-Apr-04 K3023 K3022 K3021
93L415

Abstract: 93L425
Text: Am93L425 are fully decoded 1024x 1 RAMs built with Schottky diode clamped transistors in conjunction with , -0.850 -1.5 Volts ICEX Output Leakage Current S3-V |h or WE - V|L VoUT - 2-4 V Am93L415 Series Only 0 , 5 5 5 ns 12 th(C5) Hold Time Chip Select (After Termination of Write) 5 5 5 5 5 ns 13 tpwC , 3 tRZH(CS) 9, 10, 11 12 th(CS) 9, 10, 11 4 tpZL(CS) 9, 10, 11 13 tpw(WE) 9, 10, 11 5 tP2H(WË) 9


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PDF Am93L415/Am93L425 1024-word 93L415A/425A Am93L425 Am93L415 93L415A/415 93L425A/425, 1024x 93L415 93L425
93L415

Abstract: S3v DIODE schottky 1024x1 93L425
Text: Am93L425 are fully decoded 1024x 1 RAMs built with Schottky diode clamped transistors in conjunction with , Min., I|n-=-10 mA -0.850 -1.5 Volts ICEX Output Leakage Current S3-V |h or WE - V|L VoUT - 2-4 V , 5 5 5 ns 12 th(C5) Hold Time Chip Select (After Termination of Write) 5 5 5 5 5 ns 13 tpwC , ) 9, 10, 11 11 ts(C5) 9, 10, 11 3 tRZH(CS) 9, 10, 11 12 th(CS) 9, 10, 11 4 tRZL(CS) 9, 10, 11 13 tpw


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PDF Am93L415/Am93L425 1024-word 93L415A/425A Am93L425 Am93L415 93L415A/415 93L425A/425, 1024x 93L415 S3v DIODE schottky 1024x1 93L425
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