The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

DIODE GE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N2326

Abstract: 1N232
Text: , Dnc, I/ »_/ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N2326 COMPENSATING DIODE Ge alloy-junction type used in temperature- and voltagecompensation applications, ' JEDEC TO-1 MAXIMUM RATINGS Reverse Voltage , Pt»k Recurrent Current DC Forward Current . . Temperature Range: Operating (Ti) and Storage (Tito) Lead-Soldering Temperature (10 s max) TL CHARACTERISTICS DC Forward Voltage Drop


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PDF 1N2326 1N2326 1N232
2010 - b310 diode

Abstract: B310 SDB310WAU
Text: SDB 0WAU B310 U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely low forward vo w oltage reduc conduc ces ctions. Minia ature surface moun package i excellent , Pi inning Inf formation n Pin Descr ription 1 Cathode ( Diode 1) 2 Cathode ( Diode


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PDF OT-323 25-AUG-10 KSD-D5D015-001 b310 diode B310 SDB310WAU
2010 - DIODE GE

Abstract: SDB310WKU D SCHOT MARKIN CODE
Text: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely low forward vo w oltage reduc conduc ces ctions. Minia ature surface moun package i excellent , Pi inning Inf formation n Pin Descr ription 1 Anode ( Diode 1) 2 Anode ( Diode 2


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PDF B310WKU OT-323 25-AUG-10 KSD-D5D016-001 DIODE GE SDB310WKU D SCHOT MARKIN CODE
2000 - JIS audio connector

Abstract: square connector
Text: : 1.0 Vp - p 75 Audio : 0.7 Vrms 10 k Digital : TTL LD ( Laser Diode ) Ge · APD SMF 10 / 125 Pulse , Analog Digital Link for Single Mode Silica Glass Fiber Cable ENMM1 (For Video, Audio and Digital Transmission) Part No.: ENQM11130 (Transmitter) ENQM11228 (Receiver) Type: Features · Used laser diode and single mode fiber, possible to transmit to 35 km · Simultaneous transmission of 1 ch. video, 2 ch. · audio and 1 ch. data signals Realized to constant optical power due to Auto Power Control


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PDF ENQM11130 ENQM11228 ENQ35 JIS audio connector square connector
Not Available

Abstract: No abstract text available
Text: SDB B310W U WMU SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Anode ( Diode 1) 2 Cathode ( Diode 2) 3 Cathode ( Diode 1), Anode ( Diode 2) v. AUG-10 Rev dat e: 25-A Simplified


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PDF B310W OT-323 25-AUG-10 KSD-D5D017-001
2010 - DIODE GE

Abstract: SDB310WMU KSD-D5D017-001
Text: SDB B310W U WMU SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Pi inning Inf formation n Pin Descr ription 1 Anode ( Diode 1) 2 Cathode ( Diode 2) 3 Cathode ( Diode 1), Anode ( Diode 2) v. AUG-10 Rev date: 25-A Simplified Outline S


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PDF B310W OT-323 25-AUG-10 KSD-D5D017-001 DIODE GE SDB310WMU KSD-D5D017-001
Not Available

Abstract: No abstract text available
Text: SDB 0WAU B310 U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Week Co Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Cathode ( Diode 1) 2 Cathode ( Diode 2) 3 Common Anode v. AUG-10 Rev dat e: 25-A Simplified Outline S


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PDF OT-323 25-AUG-10 KSD-D5D015-001
Not Available

Abstract: No abstract text available
Text: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene Pu eral urpose Schot e ttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier d diodes are d designed for high-speed r sw witching app plications, circuit protec ction, and vo oltage clam mping. Ex xtremely , Week Co Markin ode ng Pi inning Inf formation n Pin Descr ription 1 Anode ( Diode 1) 2 Anode ( Diode 2) 3 Common Cathode n v. AUG-10 Rev dat e: 25-A Simplified Outline


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PDF B310WKU OT-323 25-AUG-10 KSD-D5D016-001
tsf1303

Abstract: sanyo tsf1203 tsf1203 GE DIODE LA7555 sanyo TSF1303 mitsumi tuner TSF*1303 LA7550 TSF1212
Text: (,) () (1) (2) + IN Ge diode Ge diode + OUT 47F 10k 100k 0.022F OUT IN Ge diode 100k 0.022F No.2927-10/12 LA7555 [JAPAN] VCC VCC Video Out VCO AFT Out


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PDF N2927 LA7555 LA7555PLLVIF IC920kHz PLLDIP24 920kHz /8318TS 75MHz MA-6342 tsf1303 sanyo tsf1203 tsf1203 GE DIODE LA7555 sanyo TSF1303 mitsumi tuner TSF*1303 LA7550 TSF1212
2002 - DCR504ST

Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Text: DS2906SZ ­ 0.015914444 0.11368224 8.04212 x 10­ 5 ­ 0.002839595 Table 3 List of diode GE VFM , needed which approximates better to the true curve. A FOUR COEFFICIENT MODEL The GE four term , 5.286579 x 10­ 5 0.01334724 Table 2 List of thyristor GE VTM coefficients 3/5 www.dynexsemi.com


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PDF AN5001 AN5001 AN5001-4 AN5001-5 DCR504ST DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
2003 - DIODE GE

Abstract: GE brand thyristor DCR504S DCR604SE DCR820SG DCR818SG DCR806SG DCR803SG DCR720E DCR504ST
Text: ­ 0.005435085 DS2103SY / DS2103SV Table 3 List of diode GE VFM coefficients 4/5 , needed which approximates better to the true curve. A FOUR COEFFICIENT MODEL The GE four term , 0.8497627 ­ 0.03614853 1.947584 x 10 5.286579 x 10 Table 2 List of thyristor GE VTM coefficients


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PDF AN5001 AN5001 AN5001-6 AN5001-7 DIODE GE GE brand thyristor DCR504S DCR604SE DCR820SG DCR818SG DCR806SG DCR803SG DCR720E DCR504ST
2013 - Not Available

Abstract: No abstract text available
Text: PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited , CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E , BRAKE PART IGBT/ DIODE Symbol Item Conditions Rating Unit V CES Collector-emitter voltage G-E short-circuited 1200 V V GES Gate-emitter voltage C-E short-circuited  , voltage G-E short-circuited 425 I FRM Forward current W 1200 (Note2) IF A


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PDF CM100RX-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: otherwise specified) INVERTER PART IGBT/ DIODE Symbol Item I E =150 A, G-E short-circuited, Typ , MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Symbol Item V , current I CRM Rating G-E short-circuited T C =25 °C DC Emitter current (Note2, 4) A 1500 (Note2) W 150 (Note3) Pulse, Repetitive A 300 BRAKE PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1700 V V GES


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PDF CM150RXL-34SA UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: G-E short-circuited UP / UN DIODE R IF IE GWN N1 Es V V W GVN GVP-V , , GUN-Es, GWP-W, GWN-Es, GB-Es G-E short-circuited VP / VN DIODE N1 N GUP-U, GUN-Es , ) V GE =15 V CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip , ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V GES


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PDF CM50MXA-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: CURRENT 150 I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E , RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Symbol Item V CES , power dissipation IE Conditions DC, T C =125 °C Collector current I CRM Rating G-E , ) Pulse, Repetitive A 150 BRAKE PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1700 V V GES Gate-emitter voltage C-E


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PDF CM75RX-34SA UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: short-circuited P Sho rtcircuited N1 Sho rtcircuited IE G-E short-circuited UP / UN DIODE , G-E short-circuited VP / VN DIODE N1 N GUP-U, GUN-Es, GVP-V, GVN-Es, GB-Es WP / WN , CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) 3.5 (Chip) 100 , TYPE ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V


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PDF CM35MXA-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: rtcircuited N1 Sho rtcircuited IE G-E short-circuited UP / UN DIODE R IF IE GWN , (TYPICAL) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) V GE =15 V G-E short-circuited (Chip , TYPE ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V , temperature A A 200 Instantaneous event (overload) 175 °C BRAKE PART IGBT/ DIODE Rating


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PDF CM100MXA-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited , CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E , BRAKE PART IGBT/ DIODE Symbol Item Conditions Rating Unit V CES Collector-emitter voltage G-E short-circuited 1200 V V GES Gate-emitter voltage C-E short-circuited  , voltage G-E short-circuited 600 I FRM Forward current W 1200 (Note2) IF A


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PDF CM150RX-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: ) INVERTER PART IGBT/ DIODE Symbol Item I E =75 A, G-E short-circuited, Typ. Max , WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) EMITTER CURRENT I , RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Symbol Item V CES , Rating G-E short-circuited (Note2, 4) 830 (Note2) Emitter current A 150 W 75 (Note3) Pulse, Repetitive A 150 BRAKE PART IGBT/ DIODE Rating Unit V CES Symbol


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PDF CM75RX-34SA UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: / DIODE Symbol I RRM Item Reverse current Limits Conditions Min. V R =V RRM , G-E , WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) EMITTER CURRENT I , ) INVERTER PART IGBT/ DIODE Symbol Item V CES Collector-emitter voltage V GES Gate-emitter , current I CRM Rating G-E short-circuited A 150 Instantaneous event (overload) 175 °C BRAKE PART IGBT/ DIODE Symbol Item V CES Collector-emitter voltage V GES


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PDF CM75MXA-34SA UL1557, E323585
2015 - v23990-p640-g20

Abstract: No abstract text available
Text: 26 Brake Inverse Diode Gate voltage vs Gate charge V GE = f(Q GE ) 101 IF (A) ZthJC (K/W , Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge forward current , Power dissipation per Diode P tot Maximum Junction Temperature T jmax 150 °C V CE , voltage t SC V CC Tj=Tjmax V GE Short circuit ratings Tj=Tjmax Maximum Junction , A 44 67 W Brake Inverse Diode Peak Repetitive Reverse Voltage DC forward current V


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PDF V23990-P640-G20-PM v23990-p640-g20
2012 - Not Available

Abstract: No abstract text available
Text: rtcircuited N1 Sho rtcircuited IE G-E short-circuited UP / UN DIODE R IF IE GWN , ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V GES , 150 A 150 Instantaneous event (overload) 175 °C BRAKE PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited 1200 V V GES


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PDF CM75MXA-24S UL1557, E323585
2013 - Not Available

Abstract: No abstract text available
Text: PART IGBT/ DIODE Rating Unit V CES Symbol Collector-emitter voltage G-E short-circuited , voltage G-E short-circuited 1200 V V GES Gate-emitter voltage C-E short-circuited  , voltage G-E short-circuited 425 I FRM Forward current W 1200 (Note2) IF A , ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/ DIODE Symbol , current V CE =V CES , G-E short-circuited - - 1.0 mA I GES Gate-emitter leakage


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PDF CM75RX-24S UL1557, E323585 26tion
2013 - Not Available

Abstract: No abstract text available
Text: COLLECTOR CURRENT 150 I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E , specified) INVERTER PART IGBT/ DIODE Symbol Item V CES Collector-emitter voltage V GES , Conditions DC, T C =125 °C Collector current I CRM Rating G-E short-circuited (Note2, 4 , IGBT/ DIODE Symbol Item V CES Collector-emitter voltage V GES Gate-emitter voltage IC I CRM Rating Unit G-E short-circuited Conditions 1700 V C-E short-circuited


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PDF CM75MXA-34SA UL1557, E323585
2015 - Not Available

Abstract: No abstract text available
Text: Typical transfer characteristics I C = f(V GE ) Brake IGBT Figure 4 Typical diode forward current , Input Rectifier Diode Repetitive peak reverse voltage V RRM DC forward current I FAV Surge , operating area Power dissipation P tot Gate-emitter peak voltage t SC V CC Tj=Tjmax V GE , Symbol Value Unit 1200 V 67 A 150 A 141 W 175 °C Inverter Diode , voltage Short circuit ratings t SC V CC Tj=Tjmax Th=80°C V GE Maximum Junction


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PDF V23990-P769-A60-PM V23990-P769-A60Y-PM
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