The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE EJL Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE MARKING EJL

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode . State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and , TH ERM AL CHARACTERISTICS Thermal Resistance - Junction to Lead (T|_ = 25°C) R eJL 12 °C/W ELEC


OCR Scan
PDF MBRS140T3/D DIODE MARKING EJL
IRC640

Abstract: DIODE MARKING EJL
Text: © 430 mJ Iar Avalanche Current CD 18 A Ear Repetitive Avalanche Energy © 13 mJ dv/dt Peak Diode , Continuous Source Current (Body Diode ) - - 18 A MOSFET symbol id showing the ( i 1 T Source integral reverse SUit^a™, p-n junction diode . s*°" Ism Pulsed Source Current (Body Diode ) © - - 72 Vsd Diode , 0.90 1.10 1.30 1.50 Vsd. Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward , Current _Current Regulator T Same Type as D.U.T, ,n u ■2fF > I ft 3nF Vgs> t)»* EJl •AVVIO


OCR Scan
PDF IRC640 IRC640 DIODE MARKING EJL
zener diode t5

Abstract: N4748 1n4742 motorola zener diode nomenclature zener n7 Motorola 1N4742 Diode FAJ N4737 N4733 N4734
Text: Motorola I 51 volts (each device) *Code: B ­ Two devices in series Zener Diode Example , Device Description I ~ Nominal ~ "oltage ! Motorola 1 Zener Diode perature , thermal diob,q;as tio~$ seconds while maintaining the lead temperature 3/8" from the diode body , ba found Figure 2 for a train of Figure 3 for dc power. PD eJL using of TJ


Original
PDF lll141728thru 1N4764 zener diode t5 N4748 1n4742 motorola zener diode nomenclature zener n7 Motorola 1N4742 Diode FAJ N4737 N4733 N4734
T 4512 H diode

Abstract: ps 4512 diode diode T 4512 H Diode 1n5551 1N5552 JANS 1N5554US 1N5554 1N5552 1N5551 1N5550US
Text: -19500/420C 15 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON, POWER, RECTIFIER , diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension diode 1N5550 through 1N5554 , defined in MIL-S-19500, MIL-STD-750, and herein. 7 0000125 0035452 b4fl MIL-S-19500/420D 3.3.2 Diode , Steady-state operation Life. A half-sine wave of the specified peak voltage shall be impressed across the diode


OCR Scan
PDF MIL-S-19500/4200 MIL-S-19500/420C 1N5550 1N5554, 1N5550US 1N5554US MIL-S-19500. JANHCC1N5551 JANKCA1N5551 1N5552 T 4512 H diode ps 4512 diode diode T 4512 H Diode 1n5551 1N5552 JANS 1N5554 1N5552 1N5551
3 Watt Zener Diode

Abstract: DIODE EJL
Text: m th e diode body, and an a m b ie n t te m p e ra tu re o f 25°C (+8°C , -2 ° C ) NOTE 3. ZENER , from a given zener diode is tem perature dependent, it is necessary to determine ju n c tion tem , inch) or from Figure 10 for dc power. AT j l = eJL PD For worst-case design, using expected limits of , respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions


OCR Scan
PDF DO-41 DO-35 3 Watt Zener Diode DIODE EJL
do-41 footprint

Abstract: No abstract text available
Text: the actual voltage available from a given zener diode is tem perature dependent, it is necessary to , train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. AT j l = eJL PD For worst-case , not significantly respond to heat surges generated in the diode as a result of pulsed operation once


OCR Scan
PDF DO-41 1N5913B DO-35 do-41 footprint
Not Available

Abstract: No abstract text available
Text: P D4 t> 5 " d6 - D ?CLR - GND- E l Ejl 0 @ B3 0 H ®6 N*" O3 Oj 0, T L /F /9 5 8 7 , VoH Parameter Min Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output HIGH


OCR Scan
PDF 54F/74F825 Am29825 Am24825 74F825SPC 54F825SDM 74F825SC 64F825FM 54F825LM
IN3070

Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. INCH-POUNO MIL-S-19500/169H 19 May 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON, SWITCHING, TYPES 1N3070 , , unless otherwise specified). VRWM lo 1/ ^ FSMl tp = 1 s IfSM2 tp = 1 US TOP ^STG ^ejx " ejL 2/ V (Pk) V , .050 inch <1.27 run) and 1.000 inches (25.40 mm) from the diode body. Outside of this zone the lead


OCR Scan
PDF MIL-S-19500/169H MIL-S-19500/169G 1N3070, 1N3070-1, 1N3070UR-1, 1N49M, 1N493A-1, 1N4938UR-1 MIL-S-19500. JANCA4938) IN3070 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 DIODE EJL
Not Available

Abstract: No abstract text available
Text: . Typical Reverse Leakage APPLICATION NOTE Since the actual voltage available from a given zener diode , power. AT j l = eJL PD For worst-case design, using expected limits of \z, limits of P q and the , generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the


OCR Scan
PDF DO-41 MZP4728A DO-35
1N53888

Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5334B diode Lz 66 Zener diode wz 280 Zener diode wz 230
Text: /B' to 1/2" from the inside edge of mountingciips to the body of the diode . (TA = 25'C 40. -2eC). , PULSES ATjL = ejL {t,D)PPK: 0.005 0.01 0.1 0.5 t, TIME (SECONDS) Figure 4. Typical Thermal Response L , a given zener diode Is temperature dependent, it Is necessary to determine junction temperature


OCR Scan
PDF b3L72SS E3I10T7 1N53888 Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5334B diode Lz 66 Zener diode wz 280 Zener diode wz 230
MA78L05AWV

Abstract: mA78L12AWC 12awc A78L00 transistor wc TO39 A78L12 UA78L "TO-92" cooling MA78L00 el 82
Text: current voltage regulators. The ¿xA78L00 used as a Zener diode /resistor combination replacement, offers , equation (1) with 0ja of equation (3) gives: »JA (9jc + »ca) < ejL + «LA> Tj-TA 8JC + 0CA + 0JL + 0LA


OCR Scan
PDF MA78L00 uA78LOO MA78L05AWV mA78L12AWC 12awc A78L00 transistor wc TO39 A78L12 UA78L "TO-92" cooling el 82
ta1938

Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Text: MIL-S-19500/UQU 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON , eJL - - Thermal resistance, junction to lead. 3.3 Design, construction, and physical dimensions. The diode shall be of the design, construction, and physical dimensions specified in figure 1. 3.3.1 , in MIL-S-WOO, fusftri-mpt.al-oxide t.P_ metal shall also be acceptable. 3.3.2 Diode construction , . Dimension M lead diameter uncontrolled in this area. FIGURE 1. Semiconductor device, diode 1N5835 and


OCR Scan
PDF MIL-S-19500/UQU 1N5835 1N5836 MIL-S-19500, MIL-S-19500. MIL-S-19500 5961-A497 ta1938 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
003S5

Abstract: ATI 1026 Sn 4011 DIODE MARKING EJL 1N6641 1n6640 "cross reference" 1N6641US 1N6640US 1N6640 1N6639US
Text: military specification SEMICONDUCTOR DEVICE, DIODE , SILICON, SWITCHING TYPES 1N6639, 1N6640, 1N6641 , v8rr I I | vrwm I I I l0 ¡1/ 2/ f xfsm |t = 1/120s tstg TJ j " eJL |L = .375 "eJEC L = 0 ZeJX V(pk , the zone between 1.27 nm (.050 inch) from the diode body to the end of the lead. Outside - of , shall be specified in the acquisition document (see 6.2). 3.3.2 Diode construction. a. All devices , with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse


OCR Scan
PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 DIODE MARKING EJL 1N6641 1n6640 "cross reference" 1N6640US 1N6640 1N6639US
JAN 1N4150-1

Abstract: JANS1N4150-1 JANS1N6640 Scans-0016000 D0213 Q033b 3pda 1N4150UR-1 1N4150-1 1n3600 die
Text: MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE , SILICON, SWITCHING TYPES 1N3600, 1N4150-1, AND , affecting the qualified product status of the device or applicable JAN marking. 3.3.2 Diode construction , impressed across the diode in the reverse direction, followed by a half-sine waveform of the average , : ' eJL (max) = 250°C/W and R eJEC(max) = 100°C/W. IH = 75 mA to 300 mA tH = 25 seconds minimum IH = , inch (1.27 mm) and 1.00 inches (25.4 mm) from the diode body to the end of the lead. Outside of this


OCR Scan
PDF D0DD125 0033bfi? MIL-S-19500/231F MIL-S-19500/231 1N3600, 1N4150-1, 1N4150UR-1 JANSIN4150-1 MIL-S-19500/609 JANS1N6640 JAN 1N4150-1 JANS1N4150-1 JANS1N6640 Scans-0016000 D0213 Q033b 3pda 1N4150-1 1n3600 die
1N5620 die

Abstract: diode 1N4383 1N5616UL JANH 1N5620UL 1N5620 1N4585 1N5618 1N5616 1N5614UL
Text: (JANHC and JANKC). 1.3 Maximum ratings. ta =f!Wc I0 = 750 " eJL Types VR VRUM = I , specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform , adjusted such that the junction temperature of each diode is maintained at least +120°C above the


OCR Scan
PDF MIL-S-19500/427E MIL-S-19500/427D 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620 die diode 1N4383 1N5616UL JANH 1N5620UL 1N5620 1N4585 1N5618 1N5616 1N5614UL
sk 8085

Abstract: 8085 hex code MP7613 MP7612BS MP7612BN MP7612AS MP7612AN MP7612 processor 8212 block diagram of 74LS138 3 to 8 decoder
Text: CÜ V04 KSI N/C V04 11 13 N/C V05 E EQI EST V05 12 17 H3T V06 E Ejl N/C VO6 = 13 16 N/C , the absolute maximum ratings should be protected by Schottky diode clamps (HP5082-2835) from input pin


OCR Scan
PDF MP7612 12-Bit MP7613 342Htilfl 500pF 500pF, 500nF sk 8085 8085 hex code MP7613 MP7612BS MP7612BN MP7612AS MP7612AN MP7612 processor 8212 block diagram of 74LS138 3 to 8 decoder
b0821

Abstract: transistor s808 zy 406 transistor MARKING FAl zy 406 transistor 808 diode marking OX S-808 S-80810ANNP-E70-T2 s80840an
Text: open-drain active low output OUT (2) CMOS active low output ë ♦Parasitic diode Figure 2 Seiko , -80854ALNP-EEJ-T2 5. 5V±2. OX 0. 275 S-80855ANNP-EJK-T2 S-80855ALNP-EEK-T2 5. 6V±2 OX 0. 280 S-80856ANNP- EJL -12 S


OCR Scan
PDF S-808 SC-82AB SC-82RA 75kQor b0821 transistor s808 zy 406 transistor MARKING FAl zy 406 transistor 808 diode marking OX S-80810ANNP-E70-T2 s80840an
j 692

Abstract: 11N5968 A4954 1N5969 1N5968US 1N5968 1N4996US 1N4996 1N4954US 1N4954
Text: current (Ij) shall be adjusted to achieve a junction temperature of Tj » +175 (+25, -30)°C. The diode , all components of the diode periphery except the sections of leads over which the diameter is controlled. FIGURE 1. Semiconductor device, diode , silicon, voltage regulator, types 1N4954 through 1N4996 , I I | L (see note 3) | I I I " eJL ¡ I I Inches I mm I I °c/u | I I .000 I 0.00 | I 7 | | .125


OCR Scan
PDF 31ci32 MIL-S-19500/356D MIL-S-19500/356C 1N4954 1N4996, 1N5968, 1N5969, 1N6632 1N6637, 1N4954US j 692 11N5968 A4954 1N5969 1N5968US 1N5968 1N4996US 1N4996
4X4 keypad Encoder IC

Abstract: Himake pulse dial systems diode AC ZD301 ZD301 diode s34 zener diode SDIP32 transistor D351 D352* transistor BU8325S
Text: KEYTONE 5p DTMF DPMUTE MFMUTE MODEOUT HS MODEIN OSCOUT KEYTONE DP DTMF ÜPMÜTE - Ej-l -If. j-iünEí FT , mode. D352: Diode to apply power from the +5-V supply to the CPU. The diode keeps the VDD voltage , switch 2-posn. switch R306 Carbon resistor 5.1 kfí, 1/8 W D301 Diode 1SS133 R307 Carbon resistor 5.1 kQ, 1/8 W ZD301 Zener diode 5.1 V R308 Carbon resistor 100 kQ, 1/8 W X01 Oscillator 3.579545 MHz piezo


OCR Scan
PDF BU8325S BU8325K 32-digit APB-8309DIA) IC30I SW302 4X4 keypad Encoder IC Himake pulse dial systems diode AC ZD301 ZD301 diode s34 zener diode SDIP32 transistor D351 D352* transistor
Not Available

Abstract: No abstract text available
Text: erro r is ap p ro x im ately 1 O C m u lu p lic r ejl ' ljer X, - x . N o te, the div id er e , ro o t o f th e voltage V z i - V z 2 . T he diode prevents a latching con d itio n w hich could , lOkilSS Ri < 1M il to provide the cu rre n t necessary to o p erate th e diode . T h e o u tp u t offset


OCR Scan
PDF 4213/883B 4213WM/883B 4213VM/883B 4213WM 4213VM 4213UM/883B 4213UM 4213/883B 57I5V, 04317V,
triacs bt 804 600v

Abstract: 1N4465 UR720 SSP3050 unitrode 679 BRIDGE rectifier CM104 2N6138 Unitrode discrete databook 2N3750 diode 1N539
Text: reliable, economic solid-state recti­ fier tube replacements in high-voltage power supplies, (2) Diode , 20.0A; 75V 20.0A; 100V 20.0A; 125V 20.0A; 150V PIN DIODE RECTIFIER TRANSIENT SUPPRESSOR 82 1N5907, J, JTX 52 1N5957 1500W; 6V PIN DIODE Low D istortio n, AGC Diode ZENER


OCR Scan
PDF Comp27-1296 triacs bt 804 600v 1N4465 UR720 SSP3050 unitrode 679 BRIDGE rectifier CM104 2N6138 Unitrode discrete databook 2N3750 diode 1N539
2001 - Laser Diode 10 pin

Abstract: 10 pin laser diode WHS302 WLD3343 WLD3393 1k trimpot vertical C 547 B VCSEL RS910 Laser Diode 4 pin
Text: · The WLD3343 is an easy-to-use analog circuit for space contstrained laser diode applications. The WLD3343 maintains precision laser diode current (constant current mode) or stable photodiode current (constant power mode) regulation using electronics that are compatible with any laser diode type. Safely supply up to 2.2 Amps of current to your laser diode . The HB version of WLD 3343 offers low , Low Cost Slow Start Laser Diode Protection Drive Up to 2.2 Amps Output Current Constant Current or


Original
PDF WLD3343 Apr-07 31-Aug-09 21-May-10 WLD3343HB00400A WLD3343HB Laser Diode 10 pin 10 pin laser diode WHS302 WLD3393 1k trimpot vertical C 547 B VCSEL RS910 Laser Diode 4 pin
1999 - Microwave PIN diode

Abstract: HSMP-3892 HSMP-4890 HSMP-389X HSMP-3894 HSMP-3890 HSMP3890 HSMP-3880 HSMP-3820 PIN diode SPICE model
Text: Applications for the HSMP-3890 Surface Mount Switching PIN Diode Application Note 1072 Introduction The PIN diode is generally considered to behave like a current controlled RF variable resistor1 , diode can produce disastrous results in terms of circuit performance. cost solutions to their , from poor distortion performance and are not as costeffective as PIN diode switches and attenuators in very large quantities. For over 30 years, designers have looked to the PIN diode for high


Original
PDF HSMP-3890 5962-9462E 5963-1247E Microwave PIN diode HSMP-3892 HSMP-4890 HSMP-389X HSMP-3894 HSMP-3890 HSMP3890 HSMP-3880 HSMP-3820 PIN diode SPICE model
Notes for Operation II

Abstract: diode laser laser diode laser diode lifetime Laser Diode Mounts HIGH POWER DIODE
Text: Notes for Operation II SAFETY / HANDLING / WARRANTY 1. Diode Laser Safety and General Handling Instructions 1.1 Safety Instructions High power diode lasers are - according to IEC-Standard1 - class 4 laser , observed to avoid any harm to operating personnel. · Persons working with high power diode lasers must wear suitable laser protection glasses. The diode laser beam must not hit anyone's eye, because it may cause irreversible damage of the eye's retina. · Diode laser should be operated in a light-tight


Original
PDF
2005 - Z2 J diode

Abstract: AP209 TVS Diode bidirectional breakdown diodes SL05 NUP2301 NUP2105L NUP1105L TVS diode Application Note NUP2201
Text: Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION TVS Diode Protection Options Figure 1 shows a schematic representation of avalanche TVS diodes and diode arrays that provide surge protection. Both types of diode devices can be used for surge suppression; however, each option offers unique protection features. Tables 1 and 2 provide a summary of the features of avalanche TVS diode and diode , that will eventually cause a failure. Avalanche TVS diodes and diode arrays are available in a number


Original
PDF AND8231/D Z2 J diode AP209 TVS Diode bidirectional breakdown diodes SL05 NUP2301 NUP2105L NUP1105L TVS diode Application Note NUP2201
Supplyframe Tracking Pixel