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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE D29 -08 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - DIODE D29

Abstract: 350N06L d29 diode case d29 IPD350N06L PG-TO252-3-11 F29 SMD d29 smd
Text: ,pulse T C=25 °C1) 116 Avalanche energy, single pulse E AS I D=29 A, R GS=25 80 mJ Reverse diode dv /dt dv /dt I D=29 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs , =30 V, I D=29 A, V GS=0 to 5 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous , R DS(on) V GS=10 V, I D=29 A - 27 35 m V GS=4.5 V, I D=19 A - 36 47 - , D|R DS(on)max, I D=29 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one


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PDF IPD350N06L PG-TO252-3-11 350N06L DIODE D29 350N06L d29 diode case d29 PG-TO252-3-11 F29 SMD d29 smd
2008 - 47n60cfd

Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051
Text: revolutionary high voltage technology 600 0.083 R DS(on),max · Intrinsic fast-recovery body diode , Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation , V GS(th) V DS=V GS, I D=2.9 mA 3 4 5 Zero gate voltage drain current I DSS V DS , resistance R DS(on) V GS=10 V, I D=29 A, T j=25 °C - 0.07 0.083 V GS=10 V, I D=29 A , Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=29 A - 30 - Rev. 1.3 page 2 S


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PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 009-134-A O-247 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051
1999 - 47n60cfd

Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
Text: revolutionary high voltage technology 600 0.083 R DS(on),max · Intrinsic fast-recovery body diode , Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation , 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=2.9 mA 3 4 5 Zero gate , - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=29 A, T j=25 °C - 0.07 0.083 V GS=10 V, I D=29 A, T j=150 °C - 0.15 - Gate resistance


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PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
2008 - 47n60cfd

Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
Text: revolutionary high voltage technology 600 0.083 R DS(on),max · Intrinsic fast-recovery body diode , Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation , 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=2.9 mA 3 4 5 Zero gate , - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=29 A, T j=25 °C - 0.07 0.083 V GS=10 V, I D=29 A, T j=150 °C - 0.15 - Gate resistance


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PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
1999 - 47n60cfd

Abstract: 47N60 SPW47N60CFD marking code s46 47N60C
Text: 600 V · New revolutionary high voltage technology · Intrinsic fast-recovery body diode · Extremely , ) Drain source voltage slope Reverse diode d v /dt Maximum diode commutation speed Gate source voltage I D , V GS(th) V GS=0 V, I D=46 A V DS=V GS, I D=2.9 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS , , V DS=0 V V GS=10 V, I D=29 A, T j=25 °C V GS=10 V, I D=29 A, T j=150 °C Gate resistance Transconductance RG g fs f =1 MHz, open drain |V DS|>2|I D|R DS(on)max, I D=29 A 600 3 700 4 5 V Zero gate


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PDF SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd 47N60 SPW47N60CFD marking code s46 47N60C
2007 - 06035C103KAT2A

Abstract: transistor P18 FET E4 PNP SMD TRANSISTOR 1nF, 50V, AVX Corporation Cap X7R 1210 T4 LTC3706EGN pa1494.242 c86 sot23 TMK325BJ475KN CMPSH1-4
Text: 2.2uF 100V 7 36V-72Vin 10 5 4 100pF C27 100 R3 390 R78 BAS21 D29 , 3.3nF 5 4 3 * 1 -VIN R78 BAS21 D29 1 10pF C83 11 10 8 7 , C79 C55 C77 C72 C83 C84,C85 C86 C100 C101 D1,D2,D24,D26 D27, D29 D30 D31 L1 L6 Q11,Q9 , , 470pF, 25V, 10%, 0603 Diode Schottky, CMPSH1-4, 40V, SOT23 Diode , BAS21 SOT23 Diode , BAS21 SOT23 Diode , 36V SOT23 INDUCTOR, 100uH, DO1606T INDUCTOR, PLANAR, 2.4uH FET, N-CH., Si7450DP, Powerpak SO


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PDF 88A-C 6V-72VIN, LTC3725/LTC3706 88A-C LTC3725 LTC3706. DC888A-C DC888A 250kHz J1-10 06035C103KAT2A transistor P18 FET E4 PNP SMD TRANSISTOR 1nF, 50V, AVX Corporation Cap X7R 1210 T4 LTC3706EGN pa1494.242 c86 sot23 TMK325BJ475KN CMPSH1-4
2007 - nec 2501

Abstract: DIODE FS 604 CAP 10nF 200V 0603 CRCW12065R10 c86 sot23 transistor P18 FET 2501-2-00-80-00-00-07-0 LTC3725 AC Transformer 50A 100V KFH-032-6
Text: D1,D2,D24,D26 Diode Schottky, CMPSH1-4, 40V, SOT23 2 D27, D29 Diode , BAS21 SOT23 1 L1 INDUCTOR , BAS21 D29 5 6 C66 1.5n 200V 0.1uF C101 C100 470pF 150pF R101 100 5.1K C72 R58 , BAS21 D29 1 10pF C83 11 10 8 7 T2 -VOUT 2.2nF 250V C30 , , 20%, 1210 0 C74(opt) CAP., 0603 0 C81,C82(opt.) CAP., 0603 0 D30 (opt) Diode , SOT23 0 D31 (opt) Diode , SOT23 1 L5 INDUCTOR, 0.68uH, 0 Q8(opt) FET, N-CH., SO-8 2 R49,R70 RES


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PDF 88A-A 6V-72VIN, LTC3725/LTC3706 88A-A LTC3725 LTC3706. DC888A-A DC888A 250kHz J1-10 nec 2501 DIODE FS 604 CAP 10nF 200V 0603 CRCW12065R10 c86 sot23 transistor P18 FET 2501-2-00-80-00-00-07-0 AC Transformer 50A 100V KFH-032-6
2007 - transistor P18 FET

Abstract: KFH-032-6 PA1954NL TEPSLV0J227M PA0955 c86 sot23 transistor SMD p16 PA1382 DC888A Q12-Q15
Text: , 150pF, 25V, 10%, 0603 1 C101 CAP., C0G, 470pF, 25V, 10%, 0603 4 D1,D2,D24,D26 Diode Schottky, CMPSH1-4, 40V, SOT23 2 D27, D29 Diode , BAS21 SOT23 1 L1 INDUCTOR, 100uH, DO1606T 1 L6 INDUCTOR , 7 -VOUT SW 3 4 6 5 Q30 2N7002 BAS21 R78 10pF D29 R63 100K 0.1uF , -VIN R78 BAS21 D29 1 10pF C83 11 10 8 7 T2 -VOUT 2.2nF 250V , , 2.2uF, 100V, 20%, 1210 0 C74(opt) CAP., 0603 0 C81,C82(opt.) CAP., 0603 0 D30 (opt) Diode


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PDF 88A-B 6V-72VIN, LTC3725/LTC3706 88A-B LTC3725 LTC3706. DC888A-B DC888A 250kHz P1-10 transistor P18 FET KFH-032-6 PA1954NL TEPSLV0J227M PA0955 c86 sot23 transistor SMD p16 PA1382 Q12-Q15
2011 - FxLED Driver

Abstract: DIODE SMD K7
Text: ~D24 Diode , LED Blue, SMD 24 Everlight Diodes D25~ D29 Diode , LED RGB, SMD 5 , D2 out2 out9 D29 D1 out1 out14 G out13 R out14 B out15 IS31FL3216 Figure 2


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PDF IS31FL3216 FxLED Driver DIODE SMD K7
smd code capacitor

Abstract: LE50 SMD resistors DIODE D29 -08 smd Capacitor code 560 K SMD smd code D35 Capacitor Tantal SMD CAPACITOR SMD STPS340U
Text: , D25, D26, D27, D28, D29 , D30, D31, D32, D33, D34, D35, D36, D37, D38, D39 and D40 OSRAM SMD BLUE LED LB T68C-P2S1-35 or TOSHIBA LED - TLGE1100 12 1 D41 STPS340U Diode 13 1


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PDF STEVAL-ILL002V4 nF/50 nF/16 pF/50 STP08DP05 DO3316P-333ML STP08DP05TTR smd code capacitor LE50 SMD resistors DIODE D29 -08 smd Capacitor code 560 K SMD smd code D35 Capacitor Tantal SMD CAPACITOR SMD STPS340U
SMD resistors

Abstract: SMD resistors 0805 LE50 DIODE D29 -08 smd diode UF 5B smd transistor data smd Capacitor code smd code nf smd code D35 LE50 5 pin
Text: , D25, D26, D27, D28, D29 , D30, D31, D32, D33, D34, D35, D36, D37, D38, D39 and D40 OSRAM SMD BLUE LED LB T68C-P2S1-35 or TOSHIBA LED - TLGE1100 12 1 D41 STPS340U Diode 13 1


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PDF STEVAL-ILL002V3 nF/50 nF/16 pF/50 STP08DP05 DO3316P-333ML STP08DP05TTR SMD resistors SMD resistors 0805 LE50 DIODE D29 -08 smd diode UF 5B smd transistor data smd Capacitor code smd code nf smd code D35 LE50 5 pin
2009 - 2501 optocoupler

Abstract: Sanyo "date code" POSCAP Capacitor 6TPE220MI sanyo 6TPE220MI LTC3726 Q33 SOT23-6 TRANSISTOR SUBSTITUTION AN19 cap 10pF 50V 10 0603 X7R GA343QR7GD222KW01L
Text: Si7450DP 3 4 5 14 15 VA Q14 Si7336ADP VSW PT- PT+ Q34 D29 PT- 910 , . 1N4148W D29 R46 604 220uF 6.3V + C68 E7 * R41 TECHNOLOGY -VOUT 1 10pF , C81 17 1 D25 18 1 D28 19 1 D29 20 1 L1 0 L1 (second source) 21 1 L2 22 1 Q8 23 2 , , 2.2uF, 16V, 20%, 1206 CAP., X7R, 2.2nF, 25V, 10%, 0603 CAP., C0G, 10pF, 50V, 5%, 0603 DIODE , Schottky, CMPSH1-4, 40V, SOT23 Diode , MMBZ5236B, SOT23 Diode , 1N4148W SOD-123 INDUCTOR, 1.0uH INDUCTOR, 1.0uH


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PDF 031A-A 6V-72VIN, LTC3725 LTC3726 031A-A LTC3725/LTC3726. 2501 optocoupler Sanyo "date code" POSCAP Capacitor 6TPE220MI sanyo 6TPE220MI LTC3726 Q33 SOT23-6 TRANSISTOR SUBSTITUTION AN19 cap 10pF 50V 10 0603 X7R GA343QR7GD222KW01L
2009 - 2501 optocoupler

Abstract: PA0815 6TPE220MI fet 8205 TRANSISTOR SUBSTITUTION Si7336ADP LTC3726 LTC3725 AN19 R50 SOT23
Text: 15 VA Q14 Si7336ADP VSW PT- PT+ Q34 D29 PT- 910 R89 R76 1K 1/4W , . 1N4148W D29 R46 604 220uF 6.3V + C68 E7 * R41 TECHNOLOGY -VOUT 1 10pF , C81 17 1 D25 18 1 D28 19 1 D29 20 1 L1 0 L1 (second source) 21 1 L2 22 1 Q8 23 2 , , 2.2uF, 16V, 20%, 1206 CAP., X7R, 2.2nF, 25V, 10%, 0603 CAP., C0G, 10pF, 50V, 5%, 0603 DIODE , Schottky, CMPSH1-4, 40V, SOT23 Diode , MMBZ5236B, SOT23 Diode , 1N4148W SOD-123 INDUCTOR, 1.0uH INDUCTOR, 1.0uH


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PDF 031A-B 6V-72VIN, LTC3725 LTC3726 031A-B LTC3725/LTC3726. 2501 optocoupler PA0815 6TPE220MI fet 8205 TRANSISTOR SUBSTITUTION Si7336ADP LTC3726 AN19 R50 SOT23
2009 - sanyo 6TPE220MI

Abstract: 6TPE220MI 1031a KFH-032 C3225X5R0J107 POSCAP C3225X5R0J107M MS10E fcx491 8205
Text: 14 15 VA Q14 Si7336ADP VSW R79 510 PT- PT+ Q34 D29 PT- R69 124K , )434-0507 R89 C23 opt. R75 opt. 1N4148W D29 R46 604 220uF 6.3V + C68 E7 , 1 C77 15 1 C79 16 1 C81 17 1 D1 18 1 D28 19 1 D29 20 1 L1 0 L1 (second source , ., C0G, 10pF, 50V, 5%, 0603 DIODE , Schottky, CMPSH1-4, 40V, SOT23 Diode , MMBZ5236B, SOT23 Diode , D25 (opt.) DIODE , Schottky, CMPSH1-4, 40V, SOT23 4 0 Q11 (opt.) FET, N-CH, POWERPAK SO-8 5 0


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PDF 031A-C 6V-72VIN, LTC3725 LTC3726 031A-C LTC3725/LTC3726. sanyo 6TPE220MI 6TPE220MI 1031a KFH-032 C3225X5R0J107 POSCAP C3225X5R0J107M MS10E fcx491 8205
2008 - DALE PT 30-2 PULSE TRANSFORMER

Abstract: PA0801 d28 sot23 2501 optocoupler TRANSISTOR SOT23 330pF 200V 68uF 10V SANYO DC1032 C82 diode AC Transformer 50A 100V
Text: R89 D29 PT- C71 1uF 15 Q14 HAT2244WP C69 470pF 100V 2.2nF -VOUT 250V C30 , - 249 R89 1N4148W D29 -VOUT LTC3726EGN PT- 15 Q33 opt. R84 0 R53 opt , 1 C72 13 3 C75,C83,C85 14 1 C77 15 1 C79 16 1 C81 17 1 C82 18 1 D28 19 2 D29 , , 68pF, 25V, 10%, 0603 DIODE , MMBZ5236B, SOT23 DIODE , 1N4148W, SOD-123 DIODE , MMBZ5259B, SOT23


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PDF 6V-72VIN, LTC3725/LTC3726 LTC3725 LTC3726 DC1032A 300kHz DC1031A-A/B/C DC888A-A/B/C DALE PT 30-2 PULSE TRANSFORMER PA0801 d28 sot23 2501 optocoupler TRANSISTOR SOT23 330pF 200V 68uF 10V SANYO DC1032 C82 diode AC Transformer 50A 100V
RIM-ODC5

Abstract: RIM-OAC5A 220 VAC to 12 VDC circuit diagram RIM-OAC24 RIM-OAC15 RIM-OAC24A RIM-ODC24 d29b RIM-OAC5 OAC15A
Text: RIM Series Features · · · · · AC & DC Types 4KV Optical Isolation Industry Standard Packaging Plugs into Standard I/O Module Mounting Board Industry Standard Color Code (AC=Black, DC=Red) Output Digital Modules D29 1.700 (43.18) 1.000 (25.4) Case Colors: AC - Black DC - Red 4 3 1.250 (31.75) 2 1 .250 (6.35) 4-40 Hold Down Screw 1.400 (35.56) 1.200 (30.48) .700 , Diagram B - DC Output * Commutating Diode Mounting Rack Plug-In Module + Load


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PDF RIM-OAC15 RLY9141 RLY9142 RLY9144 RIM-ODC5 RIM-OAC5A 220 VAC to 12 VDC circuit diagram RIM-OAC24 RIM-OAC15 RIM-OAC24A RIM-ODC24 d29b RIM-OAC5 OAC15A
2009 - high voltage regulator schematic

Abstract: t1is LTC4269IDKD-1 2A Step Up Switching voltage Regulator
Text: (see the schematic). As required by IEEE802.3at, a diode bridge is used across the data pairs and signal pairs. Schottky diodes ( D2-9 ) are used at the input to improve efficiency over standard diode , 250kHz (typ) VPORT = 50V, IOUT = 2A, not incl. diode bridge 90.8% (typ) OPERATING PRINCIPLES A , typical DC1335A-C. Figure 3. Efficiency (not including Diode Bridge) and Output Voltage (V2) Regulation


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PDF 335A-C LTC4269IDKD-1 335A-C 4269IDKD-1. DC1366. LTC4269IDKD-1 IEEE802 LTC426TEGRATED 48Vport, 50Vport, high voltage regulator schematic t1is 2A Step Up Switching voltage Regulator
2009 - sg 66a

Abstract: 1335A "Switching Regulator" t1is LTC4269IDKD-1
Text: (see the schematic). As required by IEEE802.3at, a diode bridge is used across the data pairs and signal pairs. Schottky diodes ( D2-9 ) are used at the input to improve efficiency over standard diode , (typ) VPORT = 50V, IOUT = 6.5A, not incl. diode bridge 89% (typ) OPERATING PRINCIPLES A , typical DC1335A-A. Figure 3. Efficiency (not including Diode Bridge) and Output Voltage (V2) Regulation


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PDF 335A-A LTC4269IDKD-1 335A-A 4269IDKD-1. DC1366. LTC4269IDKD-1 IEEE802 LTC426ULATOR 57Vport, 50Vport, sg 66a 1335A "Switching Regulator" t1is
2010 - LTC4269IDKD-1

Abstract: 2A Step Up Switching voltage Regulator
Text: schematic). As required by IEEE802.3at, a diode bridge is used across the data pairs and signal pairs. Schottky diodes ( D2-9 ) are used at the input to improve efficiency over standard diode bridges. The , 50V, IOUT = 2A, not incl. diode bridge 90.8% (typ) OPERATING PRINCIPLES A compatible high power , DC1335B-C. Figure 3. Efficiency (not including Diode Bridge) and Output Voltage (V2) Regulation 4


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PDF 1335B-C LTC4269IDKD-1 1335B-C 4269IDKD-1. DC1366. LTC4269IDKD-1 IEEE802 48Vport, 50Vport, 2A Step Up Switching voltage Regulator
2009 - diode 50v 5A

Abstract: LTC4269IDKD-1 "power sourcing equipment"
Text: (see the schematic). As required by IEEE802.3at, a diode bridge is used across the data pairs and signal pairs. Schottky diodes ( D2-9 ) are used at the input to improve efficiency over standard diode , 250kHz (typ) VPORT = 50V, IOUT = 4A, not incl. diode bridge 91% (typ) OPERATING PRINCIPLES A , . Efficiency (not including Diode Bridge) 5.25 5.20 5.15 42V 50V 57V 5.10 Ef ie c ( ) f ic


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PDF 335A-B LTC4269IDKD-1 335A-B 4269IDKD-1. DC1366. LTC4269IDKD-1 IEEE802 LTC426TED 48Vport, diode 50v 5A "power sourcing equipment"
2010 - 48V dc poe top

Abstract: rj45 filter poe DC1561A POE with 24V output DC1567 Diode RJ 4A DC-1561 "powered device" DC1-561 LTC4278
Text: Efficiency 250kHz (typ) VAUX = 24V, IOUT = 4.5A (includes diode D12) 89% (typ) OPERATING PRINCIPLES , connector J1 (see the schematic in Figure 12). As required by IEEE802.3at, the DC1561A uses a diode bridge across the data pairs and signal pairs. Schottky diodes ( D2-9 ) are used at the input to improve efficiency over standard diode bridges. The LTC4278 provides the PoE 1 QUICK START GUIDE FOR , materials. Figure 3. Efficiency and Regulation (including OR'ing diode , D12) 4 QUICK START GUIDE


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PDF LTC4278 DC1561 DC1567. LTC4278 IEEE802 37Vport, 57Vaux, 48V dc poe top rj45 filter poe DC1561A POE with 24V output DC1567 Diode RJ 4A DC-1561 "powered device" DC1-561
IRF540 International Rectifier

Abstract: international rectifier 713 IRF540 international pd9373h
Text: Avalanche Energy © Avalanche Current © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Operating , dd=50V 44 53 ns Id=17A R g =9.1£2 R d=2.9 î 2 See Figure 10 © Between lead, p 6 mm (0.25in , . 28 Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode . Tj=25°C, If =17A di/dt=1 00 A/)lis © Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) © Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time A


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PDF IRF540 O-220 GD14b73 IRF540 International Rectifier international rectifier 713 IRF540 international pd9373h
2006 - 33cn10n

Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
Text: E AS I D=27 A, R GS=25 47 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=80 V, di , Gate threshold voltage V GS(th) V DS=V GS, I D=29 µA 2 3 4 Zero gate voltage drain , nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5 , [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f


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PDF IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27
2006 - 9R120C

Abstract: IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
Text: Continuous diode forward current IS Diode pulse current 2) I S,pulse Parameter Value Symbol , threshold voltage V GS(th) V DS=V GS, I D=2.9 mA 2.5 3 3.5 Zero gate voltage drain current , ns Gate Charge Characteristics V DD=400 V, I D=26 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F=26 A, T J=25 °C t rr , Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=26 A pulsed


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PDF IPW90R120C3 PG-TO247 9R120C 9R120C IPW90R120C3 9r120 CoolMOS Power Transistor IPW90R120C3 INFINEON 900 V 36 A IPW90R120C3 INFINEON JESD22
2007 - IPW50R045CP

Abstract: JESD22
Text: j=25 °C, unless otherwise specified Parameter Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Value Symbol , Gate threshold voltage V GS(th) V DS=V GS, I D=2.9 mA 2.5 3 3.5 Zero gate voltage , =3.3 ns Gate Charge Characteristics V DD=400 V, I D=44 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time V GS=0 V, I F=44 A, T j=25 °C t rr


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PDF IPW50R045CP PG-TO247 IPP50R045CP 5R045P IPW50R045CP JESD22
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