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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE D27 Datasheets Context Search

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2008 - ac power adapter for notebook schematic

Abstract: DIODE D27 TOP261LN pc357a power adapter for notebook schematic top261 PIEQ30 transformer bobbin topswitch StackFET R76 PI
Text: dampen ringing across output diode D27 . Filtering of the rectified output is provided by C52, C50, L9 , 5 mm) D27 V60100C C63 68 F 400V 8 R72 100 1% R65 2M R93 150 R62 150 D24


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PDF DI-196 OP261LN DI-196 ac power adapter for notebook schematic DIODE D27 TOP261LN pc357a power adapter for notebook schematic top261 PIEQ30 transformer bobbin topswitch StackFET R76 PI
2009 - 86A-5163

Abstract: PWM controller for ZVS half-bridge optocoupler PC817 l6591 PC817 optocoupler AHB ZVS AHB transformer 1754.0004 Magnetica sharp optocoupler PC817 SMD optocoupler IC PC817 DIODE D28
Text: Vcc voltage between 14 V and 13.5 V. Diode D27 brings the PFC_OK pin voltage over 2.5 V, so the L6563 , diode - 2% Vishay D26 STPS1L60A SMD Schottky diode STMicroelectronics D27 LL4148 , inductor L2, MOSFET Q1, diode D4 and capacitor C9. The PFC circuit is quite standard and already well , bootstrap diode and all the functions and protections tailored for this topology. The device is housed in , R46 100K Q1 R19 56K STP12NM50FP R23 0R47 + R99 15K C48 6.8NF D27 LL4148


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PDF AN2852 EVL6591-90WADP: L6591 L6563 L6563 L6591, EVL6591-90WAand 86A-5163 PWM controller for ZVS half-bridge optocoupler PC817 PC817 optocoupler AHB ZVS AHB transformer 1754.0004 Magnetica sharp optocoupler PC817 SMD optocoupler IC PC817 DIODE D28
smps circuit diagram

Abstract: DIODE D28 ICE1QS01 ICE1QS01 equivalent FLIPFLOP SCHEMATIC diode d62 AN-ICE1QS01 fault finding all type of lcd tv file zero crossing detector mosfet DIODE D27
Text: the diodes D26 and D27 . The diode D27 is necessary to transform the AC current through the capacitor , second modification is the replacement of the resistor R26 by 2 antiparallel diodes D27 and D28. Fig , further by replacing the resistor R26 by 2 antiparallel diodes D27 and D28. Now the voltage at the small capacitor C27 can change by double the value of one forward voltage of a diode , that is at least 1 V in , flows through the diodes D27 and D28 and for the burst frequency only the small capacitor C27 counts


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PDF ICE1QS01 smps circuit diagram DIODE D28 ICE1QS01 ICE1QS01 equivalent FLIPFLOP SCHEMATIC diode d62 AN-ICE1QS01 fault finding all type of lcd tv file zero crossing detector mosfet DIODE D27
2000 - SMPS CIRCUIT DIAGRAM

Abstract: TDA 3612 4N60S5 DIODE D29 sem 2106 inverter diagram sem 2106 inverter TDA 16846 sem 2106 TDA16846 circuit diagram electronic choke for tube light
Text: that the rectifier diode is only forward biased by the AC line voltage being higher than the voltage , a diode D, a resistor R, and a capacitor C. This snubber circuit cuts off the voltage overshoots at , inductor L, a diode D and a capacitor C. Fig. 8 shows the charge pump circuit which is connected between , switching transistor T. The bridge rectifier replaces the diode D1 in Fig. 6. The inductor L is put in to , Lp, at the beginning of the transformer demagnetization period with a conducting diode D. This


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PDF 1684X 1684X: SMPS CIRCUIT DIAGRAM TDA 3612 4N60S5 DIODE D29 sem 2106 inverter diagram sem 2106 inverter TDA 16846 sem 2106 TDA16846 circuit diagram electronic choke for tube light
2006 - 33cn10n

Abstract: DIODE D27 IPD33CN10N D27D27 35CN10N d804 IPP35CN10N marking 27.A 2SC3115-TBD27
Text: E AS I D=27 A, R GS=25 47 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=80 V, di , 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 35 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4


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PDF IPB35CN10N IPI35CN10N IPD33CN10N IPP35CN10N IPU33CN10N 33cn10n DIODE D27 D27D27 35CN10N d804 marking 27.A 2SC3115-TBD27
2006 - DIODE D27

Abstract: 2SC3115-TBD27 35CN10N
Text: drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power , ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 I D=27 A , (on) V GS=20 V, V DS=0 V V GS=10 V, I D=27 A, (TO252) V GS=10 V, I D=27 A, (TO251) V GS=10 V, I D=27 A, (TO263) V GS=10 V, I D=27 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A 100 2 3 0.1 4 1 µA V - 10 1 25 100 100 33 nA m - 25 33 - 25


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PDF IPB35CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N DIODE D27 2SC3115-TBD27 35CN10N
2008 - 33CN10N

Abstract: to262 pcb footprint IPP35CN10N IPD33CN 34cn 33cn10 34CN10N 35CN10
Text: =25 °C 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 47 mJ Gate source , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40


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PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N to262 pcb footprint IPD33CN 34cn 33cn10 34CN10N 35CN10
2006 - 33CN10N

Abstract: D27D27 33cn10 IPD33CN10N
Text: ,pulse E AS V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 mJ V W °C T C=25 °C 58 -55 . , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=27 A, (TO252) V GS=10 V, I D=27 A, (TO251) V GS=10 V, I D=27 A, (TO263) V GS=10 V, I D=27 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A 100 2 3 0.1 4 1 µA V - 10 1 25 100 100 33 nA m , Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time


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PDF IPB34CN10N IPI35CN10N IPP35CN10N IPD33CN10N IPU33CN10N 33CN10N D27D27 33cn10
2008 - Not Available

Abstract: No abstract text available
Text: Characteristics5) V DD=50 V, I D=27 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode , E AS I D=27 A, R GS=25 W 47 mJ Gate source voltage3) V GS ±20 V Power , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 mW V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - W 15 30 - S Gate


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PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3
2008 - 33CN10N

Abstract: IPP35CN10N IEC61249-2-21 IPB34CN10N G
Text: Pulsed drain current2) I D,pulse T C=25 °C 108 Avalanche energy, single pulse E AS I D=27 , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40


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PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N IEC61249-2-21 PG-TO263-3 33CN10N IEC61249-2-21 IPB34CN10N G
2006 - 400n06n

Abstract: DIODE D27 IPD400N06N 400n06
Text: Pulsed drain current I D,pulse T C=25 °C1) 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 80 mJ Reverse diode dv /dt dv /dt I D=27 A, V DS=20 V, di /dt =200 A/µs , D=27 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 31 40 m Gate resistance , , I D=27 A 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm


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PDF IPD400N06N PG-TO252-3 400N06N 400n06n DIODE D27 400n06
2007 - 33CN10N

Abstract: IPP35CN10N 34cn
Text: =25 °C 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 47 mJ Gate source , Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 25 33 m V GS=10 V, I D=27 A, (TO251) - 25 33 V GS=10 V, I D=27 A, (TO263) - 25 34 V GS=10 V, I D=27 A, (TO220, TO262) - 26 35 - 1 - 15 30 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40


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PDF IPB34CN10N IPI35CN10N IPD33CN10N IPP35CN10N PG-TO263-3 PG-TO252-3 33CN10N 34cn
2006 - 400N06N

Abstract: 400N06 D27D27 IPD400N06N DIODE D27 F27AT
Text: =25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source , ) Value 27 19 108 80 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=27 A, R GS=25 I D=27 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C , on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A V GS=20 V, V DS=0 V V GS=10 V, I D=27 A 60 2 3 0.01 4 1 µA V 2.2 75 50 K/W Values typ. max. Unit


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PDF IPD400N06N PG-TO252-3 400N06N PG-TO252-3 400N06 D27D27 DIODE D27 F27AT
2008 - 260N06N

Abstract: IEC61249-2-21 JESD22 PG-TO220-3 IPP260N06N3
Text: Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A - 21.8 26 m V GS=10 V, I D=27 , Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=27 A 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy , =30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=27 A, R G=3 pF ns Gate Charge Characteristics 5) V DD=30 V, I D=27 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg , - 29 - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continous forward current


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PDF IPB260N06N3 IPP260N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 260N06N 260N06N IEC61249-2-21 JESD22 PG-TO220-3
2008 - 260N06N

Abstract: DIODE D27 JESD22 PG-TO220-3 20TP
Text: GS=10 V, I D=27 A - 21.8 26 m V GS=10 V, I D=27 A, (SMD) - 21.5 25.7 - , D|R DS(on)max, I D=27 A 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one , MHz V DD=30 V, V GS=10 V, I D=27 A, R G=3 pF ns Gate Charge Characteristics 5) V DD=30 V, I D=27 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 11 , - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode


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PDF IPB260N06N3 IPP260N06N3 PG-TO263-3 PG-TO220-3 260N06N 260N06N DIODE D27 JESD22 PG-TO220-3 20TP
2001 - S124

Abstract: S127
Text: Clamp SW1 CCD ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 , D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (red) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1


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PDF TCD2704D TCD2704D S124 S127
2000 - S124

Abstract: IC-547
Text: ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 12 SH1 14 1A1 15 2A1 SHIFT GATE SH2 SW2 OS2 22 Clamp D26 D27 D28 CCD


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PDF TCD2704D TCD2704D S124 IC-547
2001 - S5339

Abstract: S2607 S124 D125 D126 D127 D149 S5340 TCD2561D S2609
Text: (EVEN) SW1 13 SH0 148 D149 PHOTO DIODE (Black & White) S5338 S5339 S5340 D128 D125 D126 D127 S1 S2 D26 D27 D28 SHIFT GATE SH0 SHIFT GATE SH0 Clamp CCD ANALOG SHIFT REGISTER (ODD) 148 D149 PHOTO DIODE (blue) S5338 S5339 S5340 D128 D125 D126 D127 S1 S2 D26 D27 D28 SW1 12 SH1 SHIFT GATE SH1 SW2 14 1A1 15 2A1 148 D149 PHOTO DIODE (green) S5338 S5339 S5340 D128 CCD ANALOG SHIFT REGISTER D26 D27 D28 Clamp D125 D126


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PDF TCD2561D TCD2561D S5339 S2607 S124 D125 D126 D127 D149 S5340 S2609
2001 - S124

Abstract: No abstract text available
Text: ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 12 SH1 14 1A1 15 2A1 SHIFT GATE SH2 SW2 OS2 22 Clamp D26 D27 D28 CCD


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PDF TCD2704D TCD2704D S124
2001 - S124

Abstract: Photodiode Array 32 element
Text: 18 Clamp SW1 CCD ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green , 22 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (red) S5338 S5339 S5340 D128 148 D149 D125


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PDF TCD2561D TCD2561D S124 Photodiode Array 32 element
2001 - S124

Abstract: S2618
Text: ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 12 SH1 14 1A1 15 2A1 SHIFT GATE SH2 SW2 OS2 22 Clamp D26 D27 D28 CCD


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PDF TCD2561D TCD2561D S124 S2618
2001 - S124

Abstract: S7500
Text: Clamp SW1 CCD ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S7498 S7499 , D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (red) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1


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PDF TCD2704D TCD2704D S124 S7500
2002 - S124

Abstract: TCD2704D
Text: 18 Clamp SW1 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH0 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S7498 S7499 S7500 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green , 22 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (red) S7498 S7499 S7500 D128 148 D149 D125


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PDF TCD2704D TCD2704D S124
2001 - S124

Abstract: D147 D149 D128 D127 D126 D125 TCD2704D CM500S D149 diode
Text: (EVEN) SW1 13 SH0 148 D149 PHOTO DIODE (Black & White) S7498 S7499 S7500 D128 D125 D126 D127 S1 S2 D26 D27 D28 SHIFT GATE SH0 SHIFT GATE SH0 Clamp CCD ANALOG SHIFT REGISTER (ODD) 148 D149 PHOTO DIODE (blue) S7498 S7499 S7500 D128 D125 D126 D127 S1 S2 D26 D27 D28 SW1 12 SH1 SHIFT GATE SH1 SW2 14 1A1 15 2A1 148 D149 PHOTO DIODE (green) S7498 S7499 S7500 D128 CCD ANALOG SHIFT REGISTER D26 D27 D28 Clamp D125 D126


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PDF TCD2704D TCD2704D S124 D147 D149 D128 D127 D126 D125 CM500S D149 diode
2000 - CCD linear image sensor 22-pin scanner

Abstract: S124 IC-547
Text: ANALOG SHIFT REGISTER (EVEN) SHIFT GATE SH0 PHOTO DIODE (Black & White) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 13 SH0 SHIFT GATE SH0 Clamp SW1 PHOTO DIODE (blue) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 D26 D27 D28 CCD ANALOG SHIFT REGISTER (ODD) SHIFT GATE SH1 SW2 OS1 21 Clamp D26 D27 D28 CCD ANALOG SHIFT REGISTER PHOTO DIODE (green) S5338 S5339 S5340 D128 148 D149 D125 D126 D127 S1 S2 12 SH1 14 1A1 15 2A1 SHIFT GATE SH2 SW2 OS2 22 Clamp D26 D27 D28 CCD


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PDF TCD2561D TCD2561D CCD linear image sensor 22-pin scanner S124 IC-547
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