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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

DIODE A7N Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUZ11S2FI

Abstract: BUZ11S2 CT55
Text: 170 ns ■Sea note on ISOWATT 220 in this datasheet _ fwT SGS-THOMSON ■7#n , (Continued) 30E D Parameters Test Conditions Min. Typ. Max. Unit / T- 39-n SOURCE DRAIN DIODE iSD , €” -1C0 -50 0 SO 100 Tj CC) Source-drain diode forward characteristics _ Ä7 SGS-THOMSON 180 7=12^237


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PDF BUZ11S2 BUZ11S2FI BUZ11S2FI 500ms CT55
2004 - DIODE A7N

Abstract: A7N transistor DIODE B4N d9n diode EBGA240 transistor a7n b7n diode TS81102G0 AT84CS001 DIODE A4N
Text: monitoring is possible by sensing the voltage drop across a diode implemented close to the die's hot point , Inverted phase output data port C DIODE Diode for die junction temperature monitoring COR/DRCN , , DAON DIODE GND 3 5402AS­BDC­11/04 Pin Description Table 2. Pin Description Symbol Pin , , A3N, A4N, A5N, A6N, A7N , A8N, A9N A16, A15, A14, A13, A12, A11, A10, A9, A8, A7 Inverted phase , A17 Staggered output mode selection signal BIST V17 Built-in self test enable DIODE


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PDF 5402AS DIODE A7N A7N transistor DIODE B4N d9n diode EBGA240 transistor a7n b7n diode TS81102G0 AT84CS001 DIODE A4N
2010 - smd transistor A7p

Abstract: smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
Text: /8 Ce13 5/6 Ce14 7/8 Ce15 T1 A7N RSH 1 47 2 X2_5 R2 R6 X2 , Atmel® Murata® STS4DNF60L STS4DNF60L T2 Dual NMOS D1 Diode Schottky 60V / 3A ST ST 30BQ060 IR D2 Diode Schottky 60V / 3A 30BQ060 IR LD1 LED Red TLMT


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PDF ATA5279 ATA5279 smd transistor A7p smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
74HC76

Abstract: DIODE A7N 54HC 74HC M54HC76 M74HC76 M74HC76B1N
Text: VCc+ 0-5 V Vo DC Output Voltage -0.5 to Vcc + 0.5 V ilk DC Input Diode Current =t 20 mA 'ok DC Output Diode Current ± 20 mA Io DC Output Source Sink Current Per Output Pin ± 25 mA 'cc or 'gnd DC , OUTPUT EQUIVALENT CIRCUIT 'cc cc Gf SGS-THOMSON Ä7#n , MOeiBOiyiCTISOHBIBS 5/5 153 This Material


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PDF M54HC76 M74HC76 54/74LS76 M54/74HC76 M54/74HC76 k50v- 74HC76 DIODE A7N 54HC 74HC M74HC76 M74HC76B1N
Not Available

Abstract: No abstract text available
Text: D5n D6 D6n D7 D7n m "D2n ÜT "D3n D4 D4n or T55n DF "D6n Ü7 ~ Ü7n X: DONâ , DC Output Voltage - 0.5 to Vcc + 0.5 l|K DC Input Diode Current ± 20 mA lOK DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 35 mA


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PDF M54HC356 M74HC356 54/74LS356 M54/74HC356 M54/74HC356 7T2T237
Not Available

Abstract: No abstract text available
Text: DOn ÜT D1n m DSn T5T D3n ÜT D4n D5" Ü5n T5S" D6n 07 Ü7n DO DOn D1 D1n D2 D2n , 0.5 Vo DC Output Voltage —0.5 to VCq + 0.5 V IlK DC Input Diode Current ± 20 mA lOK DC Output Diode Current ± 20 mA !0 DC Output Source Sink Current Per Output


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PDF QMD143 M54HC354 M74HC354 54/74LS354 74HC354 0040m S-10400
A7N transistor

Abstract: transistor a7n ti77 ec ubt
Text: V; lD= 9 A; V gs = 5 V ; R g = 1 0 i i ; T, - 25°C - ti RE VE RSE DIODE LIMITING VALUE S AND C , current Diode forward voltage Reverse recovery time Reverse recovery charge Tsp = 25°C Tsp = 25°C lF = , specification TrenchMOSTM transistor Logic level FET PHT11N06LT ·inn WDSS% a7n 7 U inn 1UU an yu on oU


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PDF PHT11N06LT A7N transistor transistor a7n ti77 ec ubt
DIODE A7N

Abstract: 004B AT84AS003 DIODE F22 diode t25 4 d9 0812D diode t25 4 B9 AT84AS003CTP AT84AS003VTP AT84AS004VTP
Text: DAI, DAIN Unchanged A21 B/GB A22 Diode /DECb Unchanged A23 PGEB Inactive at , VPLUSD A7 A7N VCCD VCCD VCCD A8 A8N B0N AOR / DRAN VPLUSD VPLUSD , DIODE ADC PGEB VPLUSD VCCA VCCA AGND SDA AGND VEE VEE VCCA VCCA NC


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PDF AT84AS003/004 AT84AS003/004B AT84AS003/004B. AT84AS003CTP AT84AS003VTP AT84AS004CTP AT84AS004VTP DIODE A7N 004B AT84AS003 DIODE F22 diode t25 4 d9 0812D diode t25 4 B9 AT84AS003CTP AT84AS003VTP AT84AS004VTP
AT84AS004CTP

Abstract: diode t25 4 d9 diode t25 4 B9 AT84AS004VTP DIODE A7N a6n 100 E20 L27 b7n diode AT84AS003CTP transistor a7n
Text: , V19 DAI, DAIN Unchanged A21 B/GB A22 Diode /DECb Unchanged A23 PGEB , 5471C­BDC­11/10//06 VCCA VCCA VEE plane: VCCA VCCA VEE VEE VCCA VEE DIODE ADC , VPLUSD VPLUSD A7 A7N VCCD VCCD VCCD A8 A8N B0N AOR / DRAN VPLUSD


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PDF AT84AS003/004 AT84AS003/004B AT84AS003/004B. AT84AS003/004 AT84AS003/004B AT84AS003CTP AT84AS003VTP AT84AS004CTP AT84AS004VTP AT84AS004CTP diode t25 4 d9 diode t25 4 B9 AT84AS004VTP DIODE A7N a6n 100 E20 L27 b7n diode AT84AS003CTP transistor a7n
1997 - EV10AQ190

Abstract: transistor b9n EVX10AQ190TPY dioda C5N EV10AQ190TPY-EB ncc7 a2n dioda H1 dioda DIODE A7N GHz ADC
Text: diode for the die junction temperature monitoring is implemented using a diode-mounted transistor but , NC NC NC NC NC GND GND 1 A1N A3N A5N A7N NC NC NC NC NC VCC VCC 2 CDRN CDR DDRN DDR D1N D3N D5N , ) Description Digital Output signals A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A0N A1N A2N A3N A4N A5N A6N A7N A8N A9N , diode anode and cathode NC Reserved pins Do not connect 16 0952BS­BDC­02/09 e2v , reset (active low) Digital scan mode signals Diode anode for die junction temperature monitoring Diode


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PDF EV10AQ190 10-bit 0952BS EV10AQ190 transistor b9n EVX10AQ190TPY dioda C5N EV10AQ190TPY-EB ncc7 a2n dioda H1 dioda DIODE A7N GHz ADC
1997 - EV10AQ190

Abstract: Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
Text: diode for the die junction temperature monitoring is implemented using a diode-mounted transistor but , C2 C0 D0 D2 D4 D6 NC NC BDR BDRN ADR ADRN A1 A3 A5 A7 NC NC NC NC NC GND GND 1 A1N A3N A5N A7N NC , A6 A7 A8 A9 A0N A1N A2N A3N A4N A5N A6N A7N A8N A9N AOR AORN ADR ADRN B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 , Output reference for Channel A-B and C-D Input common mode Temperature diode anode and cathode NC , Function Chip Select (active low) Digital asynchronous reset (active low) Digital scan mode signals Diode


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PDF EV10AQ190 10-bit 0952CS EV10AQ190 Marking D9N EBGA380 DIODE B4N marking aa5 transistor marking c3n EV10AQ190TPY-EB EVX10AQ190TPY
1997 - EV10AS150

Abstract: diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
Text: the DMUX power consumption. The ADC junction temperature monitoring is made possible through the DIODE input by sensing the voltage drop across a diode implemented on the ADC close to chip hot point. The , , BORN/DRB C0.C9 C0N.C9N COR/DRCN, CORN/DRC D0.D9 D0N.D9N DOR/DRDN, DORN/DRD RS CLKDACTRL DIODE , staggered mode for port D DMUX ratio selection signal Control signal for clock delay cell Diode for die junction temperature monitoring (ADC) Name RESET AGND DGND SLEEP STAGG RS BIST DRTYPE DIODE ADC


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PDF EV10AS150 10-bit 0954BS EV10AS150 diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
2005 - AT84CS001

Abstract: DIODE A7N 5413B diode b17 TS8388B TS83102G0B TS81102G0 AT84AS008 transistor a7n atmel tbga
Text: Swing adjust Sleep mode Built-in Test Temperature diode Available package 3. New Functions of the , "1": R = 10 K "0": R= 10 Built-in Self Test DIODE Max: VDiode = 700 mV Idiode = 1 mA DIODE Max: VDiode = 700 mV Idiode = 1 mA Die junction temperature monitoring SwiAdjust 0V , name AT84CS001 Signal name C19 DIODE DIODE B17 Asyncreset ASYNCRST V18 , C7 A6 W3 F3 C8N A9 C6 A7N V4 F2 C9 B9 C5 A7 W4 F1 C9N


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PDF TS81102G0 AT84CS001 TS8388B TS83102G0B 10-bit AT84AS008 DIODE A7N 5413B diode b17 transistor a7n atmel tbga
74ABT16652

Abstract: BT16652DGG BT16652DL
Text: RATING UNIT Vcc DC supply voltage -0.5 to +7.0 V IlK DC input diode current V|<0 -18 mA V| DC input voltage3 -1.2 to +7.0 V 'OK DC output diode current Vo<0 -50 mA VOUT DC output voltage3 output in Off or , Waveform 2. Propagation Delay, nAx to nBx or nBx to nAx nSBA or nSAB J \r, —7N VM tpHL VM \ \ '


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PDF 74ABT16652 16-bit 7110fl2b 64mA/-32mA 500mA TSSOP56: 74ABT16652 BT16652DGG BT16652DL
1997 - EV10CS140TP-EB

Abstract: EVX10CS140TPY EV10CS140
Text: D0N.D9N DOR/DRDN, DORN/DRD CLKDACTRL ASYNCRST SLEEP RS DRTYPE STAGG BIST DIODE Functional Description , outputs Built-In Test enable Diode for die Junction Temperature monitoring DGND SLEEP STAGG RS BIST , , DRN DIODE Bit 0 corresponds to LSB and Bit 9 to MSB 4 1007A­BDC­09/09 e2v semiconductors , current into a diode mounted transistor and sensing the voltage across the DIODE pin and the closest available ground pin. The measurement setup is described in the Figure hereafter: Figure 5-11. DMUX Diode


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PDF EV10CS140 10-bit EV10CS140TP-EB EVX10CS140TPY EV10CS140
1997 - DIODE A7N

Abstract: No abstract text available
Text: D0N.D9N DOR/DRDN, DORN/DRD CLKDACTRL ASYNCRST SLEEP RS DRTYPE STAGG BIST DIODE Functional Description , outputs Built-In Test enable Diode for die Junction Temperature monitoring DGND SLEEP STAGG RS BIST , , DRN DIODE Bit 0 corresponds to LSB and Bit 9 to MSB 4 1007B­BDC­11/09 e2v semiconductors , method consists in forcing a 1 mA current into a diode mounted transistor and sensing the voltage across the DIODE pin and the closest available ground pin. The measurement setup is described in the Figure


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PDF EV10CS140 10-bit 1007B DIODE A7N
1997 - Not Available

Abstract: No abstract text available
Text: pattern fashion on all 4 ports. A diode is provided to monitor the junction temperature, with both anode , DGND D9 D8N D8 H J A7 A7N A6N DGND DGND VCC3 AGND AGND AGND AGND VCC3 DGND , DIODE C OA DGND D1N D1 N P A0 A0N DIODE A GA DGND AGND AGND AGND AGND , A5, A5N K1, K2 A6, A6N K3, J3 A7, A7N J1, J2 A8, A8N H1, H2 A9, A9N H3, G3 , Decimation enable DIODEA, DIODEC Diode for die junction temperature monitoring RS0 ; RS1 DIODEA


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PDF EV10AS180AGS 10-bit
2012 - Not Available

Abstract: No abstract text available
Text: division selection (possibility to change the division ratio of the DSP clock) o Diode for die junction , SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1:0] SYNCN CLK, CLKN , , OUTN DSP_CK, DSP_CKN DIODE 2 AGND DGND Functions Description Table 9. Name VCCD , digital input Port D Diode Diode for temperature monitoring OUT In-phase analog output , any time EV10DS130AGS 4.11. Diode function A diode for die junction temperature monitoring is


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PDF EV10DS130AGS 10-bit Clo42
1997 - Not Available

Abstract: No abstract text available
Text: checker board pattern fashion on all 4 ports. A diode is provided to monitor the junction temperature , DGND D9 D8N D8 H J A7 A7N A6N DGND DGND VCC3 AGND AGND AGND AGND VCC3 DGND , DIODE C OA DGND D1N D1 N P A0 A0N DIODE A GA DGND AGND AGND AGND AGND , is the LSB, A9 is the MSB. A4, A4N L1, L2 A5, A5N K1, K2 A6, A6N K3, J3 A7, A7N , SA B0 . B9 B0N . B9N CLK, CLKN GA [B0:B9] [B0N:B9N] A0 . A9 A0N . A9N Diode


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PDF EV10AS180A 10-bit 1096Câ
2013 - Not Available

Abstract: No abstract text available
Text: Clocking Mode - Diode for Die junction Temperature Monitoring LVDS Differential Data input and DSP Clock , DSPN 2 2 FPGA TIMING DSP CLOCK PHASE SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 , IDC_N OUT, OUTN DSP_CK, DSP_CKN DIODE 2 DGND Table 5-1. 2 DAC 10-bit 2 GA , Selection (by 4 or 8) D[9.0]N Inverted phase digital input Port D Diode Diode for temperature , and GA min for GA = V CCA3 5.10 Diode Function A diode is available to monitor the die junction


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PDF EV10DS130AZP 10-bit
2014 - Not Available

Abstract: No abstract text available
Text: of the DSP Clock) - Input Under Clocking Mode - Diode for Die junction Temperature Monitoring LVDS , CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1:0] SYNCN CLK, CLKN GA 2. Description , DIODE 2 DGND Table 5-1. VCCD 2 GA SYNC VCCA3 AGND Functions Description , Inverted phase digital input Port D Diode Diode for temperature monitoring OUT In-phase analog


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PDF EV10DS130AG 10-bit 1090Bâ
2012 - Not Available

Abstract: No abstract text available
Text: DSP Clock) - Input Under Clocking Mode - Diode for Die junction Temperature Monitoring LVDS , PHASE SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1:0] SYNCN CLK , 3 PSS SYNC DSP_CK, DSP_CKN DIODE 2 DGND AGND 14 1080A–BDC–02/12 e2v , digital input Port D Diode Diode for temperature monitoring OUT In-phase analog output SYNC , for GA = 0 and GA min for GA = V CCA3 4.11 Diode Function A diode for die junction temperature


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PDF EV12DS130AGS 12-bit
2014 - Not Available

Abstract: No abstract text available
Text: of the DSP Clock) - Input Under Clocking Mode - Diode for Die junction Temperature Monitoring LVDS , TIMING DSP CLOCK PHASE SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1 , SYNC DAC 12-bit IDC_P IDC_N OUT, OUTN 2 GA DSP_CK, DSP_CKN DIODE 2 DGND , factor Selection (by 4 or 8) D[11.0]N Inverted phase digital input Port D Diode Diode for


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PDF EV12DS130AG 12-bit 1080Fâ
2013 - Not Available

Abstract: No abstract text available
Text: of the DSP Clock) - Input Under Clocking Mode - Diode for Die junction Temperature Monitoring LVDS , TIMING DSP CLOCK PHASE SHIFT CLOCK DIV/X CLOCK BUFFER DIODE 2 PSS[2:0] SYNC, OCDS[1 , OUT, OUTN 2 GA DSP_CK, DSP_CKN DIODE 2 DGND Table 5-1. VCCD AGND , or 8) D[11.0]N Inverted phase digital input Port D Diode Diode for temperature


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PDF EV12DS130AG 12-bit 1080Eâ
2014 - Not Available

Abstract: No abstract text available
Text: diode for the die junction temperature monitoring is implemented using a diode-mounted transistor but , D5N D5 J H A7 A7N NC NC VCCO VCCO NC NC D7N D7 H G NC , K1, K2 A4, A4N K3, K4 A5, A5N J1, J2 A6, A6N J3, J4 A7, A7N H1, H2 A8, A8N


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PDF EV10AQ190A 10-bit 1070Bâ
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