The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
KW015A0F41-SR GE Critical Power KW015 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 3.3V; Output Current: 15A; On/Off Logic: Negative; Connector Type: Surface Mount
KW020A0G41Z GE Critical Power KW020 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 2.5V; Output Current: 20A; On/Off Logic: Negative; Connector Type: Through Hole
KW010A0A41-SR GE Critical Power KW010 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 5.0V; Output Current: 10A; On/Off Logic: Negative; Connector Type: Surface Mount
KW020A0G41-SRZ GE Critical Power KW020 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 2.5V; Output Current: 20A; On/Off Logic: Negative; Connector Type: Surface Mount
KW015A0F41 GE Critical Power KW015 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 3.3V; Output Current: 15A; On/Off Logic: Negative; Connector Type: Through Hole
KW020A0G41-BZ GE Critical Power KW020 Series Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 2.5V; Output Current: 20A; On/Off Logic: Negative; Connector Type: Through Hole

DEC/10/2002 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
P50N03LD

Abstract: Niko Semiconductor
Text: Dec- 10-2002 P50N03LD N-Channel Logic Level Enhancement Mode Field Effect Transistor , LOT # 2 Dec- 10-2002 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LD TO-252 (DPAK) TYPICAL CHARACTERISTICS 3 Dec- 10-2002 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 P50N03LD TO-252 (DPAK) Dec- 10-2002 , 4.4 4.6 G 6 6.2 N 5 0.8 Dec- 10-2002 -


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PDF P50N03LD O-252 Dec-10-2002 P50N03LD Niko Semiconductor
Not Available

Abstract: No abstract text available
Text: [ .250+.002] _ 12.62 [ .497] R5F + 48.26 [ 1 .900] Bs* 02.59+0„05 [ „ 102+.002 ] 2 POO


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PDF 16DEC03 16-DEC-03 us043446 /home/us043446/dmmod
AD5640

Abstract: No abstract text available
Text: JJ-LL JJ-LL JJ-LL JP 6.35+0.05 [.250+.002] 88.90 [3.500] <¿2. 59±0 . 05 [. 102+.002 ] 2 PLC 31 SPACES AT


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PDF AD55S8 AD5640 AD5876 AD5995 AD6252 17105-3G09
Not Available

Abstract: No abstract text available
Text: 88.90 [3.500] 12.62 [ .497] REF 02.59+0.05 [ . 102+.002 ] 2 PLC 31 SPACES AT 2.54 [ . 100


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PDF 9Y9Y91 9Y10Y91 9Y12Y91 12Y91 07-NOV-01 amp40973 /home/amp40973/dmmod
AD5640

Abstract: C-16 205j AD5588
Text: JI Z' 48. 26 [1 . 900] 6.35+0.05 [.250+.002] 02.59±0.05 [. 102+.002 ] 2 PLC cn cn cn 15 SPACES AT 2.54


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PDF AD5588 AD5640 AD5876 AD5995 AD6252 17105-3G09 C-16 205j
C236

Abstract: No abstract text available
Text: 8 DRAWING MADE IN THIRD ANGLE PROJECTION 7 O 4 D C 0 B A THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ,19 © COPYRIGHT 19 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. 53.34 [2. 100] MAX — 44.65 [1 .758]- 0.94+0.05 TYP [.037 +„002] "Z o □0 > V. VVVVVVVVVVVVVVVV A — 2.41 . 095 + 0. 08 -0. 1 . 003 -.004 8.74+0.05 [.344+.002] 47. 12 + 0. 1 [1 .855+.004] 02.59+0.05 TYP [. 102+.002 ] L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J-L J X 48 . 26 [1 . 900] 4.9+0.05 TYP [. 1 93


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PDF 175G-3 J7131 C236
Not Available

Abstract: No abstract text available
Text: THIS APPROXIMATE AREA. 7\ MARKINGS ON THIS SIDE. 87.76±0. 1 [3.455+.004] 02.59+0.05 TYP [. 102+.002


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PDF 175S-3
axp 193

Abstract: No abstract text available
Text: 88.90[3.500] 02.59+0.05 [. 102+.002 ] 2 PLC ■«8 T 6.00 [ .236] POSITION A-32 5 . 46 5 . 33 21 5


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PDF 5PAC55 2Y2Y92 2Y11Y92 2Y11/92 1O-AUG-99 amp40973 /home/amp40973/edmmod axp 193
50ARC

Abstract: No abstract text available
Text: DRAWING MADE IN THIRD ANGLE PROJECTION 7 6 5 <3> 4 3 2 D C A THIS DRAWING 15 UNPUBLI5HED RELEASED FOR PUBLICATION 1 9 COPYRIGHT 19 BY ANP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. 94 [3. 700] MAX 85.29 [3. 358] Ss» 0.94±0.05 TYP [ . 037±. 002] 7 E E E E E E E CG > V. ì \I \I \I \I \I \I \I A — 2.41 +o. 08 -o. 1 095 + . 003 - . 004 8.7 4 ±0.05 [ .344±.002] 10.1 [ . 398] _ REF / 02.59+0.05 TYP [ . 102+.002 ] ■«8 87.76±0. 1 [3.455±.004] V —f A L J-L J-L J-L J-L J-L J-L J-L J-L J-L


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PDF 8X14X92 07-NOV-01 amp40973 /home/amp40973/dmmod 50ARC
2002 - Not Available

Abstract: No abstract text available
Text: Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.75 °C/W 053-7045 Rev - 10-2002 MS1008 , -220 053-7045 Rev - 10-2002 MS1008 TYPICAL PERFORMANCE 053-7045 Rev - 10-2002 MS1008 TYPICAL TYPICAL PERFORMANCE 053-7045 Rev - 10-2002 MS1008 PACKAGE MECHANICAL DATA 053-7045 Rev - 10-2002 Advanced Power Technology


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PDF MS1008 MS1007 150WPEP 000MHz 001MHz 100mA
2002 - MS1007

Abstract: No abstract text available
Text: Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7044 Rev - 10-2002 Value , - 220 pf f1 = 30.000MHz f2 = 30.001MHz COB Conditions 053-7044 Rev - 10-2002 MS1007 TYPICAL PERFORMANCE 053-7044 Rev - 10-2002 MS1007 DATA PACKAGE MECHANICAL DATA 053-7044 Rev - 10-2002 Advanced Power Technology


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PDF MS1007 MS1007 100mA 150WPEP 000MHz
2002 - Not Available

Abstract: No abstract text available
Text: 10-2002 MS1403 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW STATIC ELECTRICAL SPECIFICATIONS , ELECTRICALS 053-7072 Rev - 10-2002 MS1403 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW P A C K A G E DA T T A 053-7072 Rev - 10-2002 MS1403 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW NOTES 053-7072 Rev - 10-2002 Advanced Power Technology


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PDF MS1403 MS1403
2002 - 1000 watts power amp circuit diagram

Abstract: 2160 transistor
Text: PRELIMINARY GOLDMOS ® Field Effect Transistor 90 Watts, 2110-2170 MHz Description The PTF 102002 , gold metallization ensures excellent device lifetime and reliability. PTF 102002 * Key Features · , . Data Sheet Rev. PA11 1 2002-10-31 PRELIMINARY PTF 102002 Electrical Characteristics (100 , Efficiency (at P-1dB) vs. Frequency Output Power (Watts) Efficiency (%) PRELIMINARY PTF 102002 , . PA11 3 2002-10-31 PRELIMINARY PTF 102002 Impedance Data D Z0 = 50 W Z Source Z


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PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF 1000 watts power amp circuit diagram 2160 transistor
2002 - MS1004

Abstract: No abstract text available
Text: Junction-case 053-7041 Rev - 10-2002 Value Unit 55 4.0 40 330 200 -65 to +150 V V V A W , C COB Conditions f1 = 30.000 MHz 053-7041 Rev - 10-2002 f2 = 30.001 MHz - -10 10 45 MS1004 TYPICAL PERFORMANCE 053-7041 Rev - 10-2002 MS1004 TYPICAL PERFORMANCE 053-7041 Rev - 10-2002 MS1004 PACKAGE MECHANICAL DATA 053-7041 Rev - 10-2002


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PDF MS1004 MS1004 10ditions 30MHz
2002 - Not Available

Abstract: No abstract text available
Text: Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.4 C/W 053-7041 Rev - 10-2002 , 30.000 MHz 053-7041 Rev - 10-2002 MS1004 TYPICAL PERFORMANCE 053-7041 Rev - 10-2002 MS1004 TYPICAL PERFORMANCE 053-7041 Rev - 10-2002 MS1004 PACKAGE MECHANICAL DATA 053-7041 Rev - 10-2002 Advanced Power Technology


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PDF MS1004 MS1004 30MHz
2001 - sma connector panel

Abstract: 102002 PA10 2160 transistor
Text: PRELIMINARY PTF 102002 * GOLDMOS ® Field Effect Transistor 90 Watts, 2110-2170 MHz , The PTF 102002 is an internally matched 90­watt GOLDMOS FET intended for WCDMA applications from 2110 , PRELIMINARY PTF 102002 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol , ) Typical Performance e PRELIMINARY PTF 102002 Typical Performance (cont.) Broadband Test Fixture , results. 3 130 e PRELIMINARY PTF 102002 Impedance Data Z0 = 50 W D Z Source Z Load


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PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF sma connector panel 102002 PA10 2160 transistor
2000 - Not Available

Abstract: No abstract text available
Text: PTF 102002 LDMOS RF Power Field Effect Transistor 90 Watts, 2110­2170 MHz Description The PTF 102002 is an internally matched 90­watt GOLDMOS® FET intended for WCDMA applications from 2110 to 2170 , Rev. B, 2003-06-05 PTF 102002 Electrical Characteristics at TCASE = 25°C unless otherwise , ) Data Sheet 2 Rev. B, 2003-06-05 Input Return Loss (dB) Efficiency (%) PTF 102002 , ) -10 25 PTF 102002 Broadband Circuit Impedance Data VDD = 28 V, IDQ = 1.0 A, POUT = 90 (W


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PDF 1522-PTF
ELB-1020GD

Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. CDDB- 102-002 REV: 2 ECN : Device Number : Page: 1 , ,22676306 http://www.everlight.com EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDB- 102-002 , specification. EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDB- 102-002 REV: 2 Page: 3/5 , : Parameter Luminous Intensity Per segment EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDB- 102-002 , Electro-Optical Characteristic Curves: ECN : EVERLIGHT ELECTRONICS CO.,LTD. CDDB- 102-002 Device Number


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PDF CDDB-102-002 ELB-1020GD ELB-1020 30min ELB-1020GD
2002 - Not Available

Abstract: No abstract text available
Text: RTH(J-C) Thermal Resistance Junction-case 0.75 C/W 053-7044 Rev - 10-2002 MS1007 , - -220 053-7044 Rev - 10-2002 MS1007 TYPICAL PERFORMANCE 053-7044 Rev - 10-2002 MS1007 PACKAGE MECHANICAL DATA DATA 053-7044 Rev - 10-2002 Advanced Power Technology


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PDF MS1007 MS1007 150WPEP 000MHz 001MHz 100mA
2001 - capacitor 0.1uf DIGIKEY

Abstract: 2160 transistor sma connector panel capacitor siemens 4700 35 Ericsson 3GPP
Text: PRELIMINARY PTF 102002 * GOLDMOS ® Field Effect Transistor 90 Watts, 2110-2170 MHz , Metallization · · Excellent Thermal Stability Integrated ESD Protection The PTF 102002 is an , additional information from your Ericsson Sales Representative. e 1 e PRELIMINARY PTF 102002 , 102002 Typical Performance (cont.) Broadband Test Fixture Performance 7.5 V DD = 28 V IDQ = , . Measurements of the finished product will not yield these results. 3 130 e PRELIMINARY PTF 102002


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PDF 2012-F2N75 220QBK-ND 1-877-GOLDMOS 1522-PTF capacitor 0.1uf DIGIKEY 2160 transistor sma connector panel capacitor siemens 4700 35 Ericsson 3GPP
1998 - 5STP06D2600

Abstract: No abstract text available
Text: Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features · Patented , Doc. No. 5SYA 1020-02 April, 98 ABB Semiconductors AG 5STP 06D2800 Thermal Tj max Tj stg , characteristics. Doc. No. 5SYA 1020-02 April, 98 3 of 6 ABB Semiconductors AG 5STP 06D2800 Fig. 4 , of 6 Doc. No. 5SYA 1020-02 April, 98 ABB Semiconductors AG 5STP 06D2800 Fig. 8 Gate , current. Doc. No. 5SYA 1020-02 April, 98 5 of 6 ABB Semiconductors AG ABB Semiconductors AG


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PDF 06D2800 06D2800 06D2600 06D2200 67xVDRM CH-5600 5STP06D2600
2002 - MS1277

Abstract: No abstract text available
Text: /W Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7062 Rev - 10-2002 MS1277 , compression 053-7062 Rev - 10-2002 MS1277 TYPICAL PERFORMANCE 053-7062 Rev - 10-2002 MS1277 PACKAGE MECHANICAL DATA 053-7062 Rev - 10-2002 Advanced Power Technology


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PDF MS1277 MS1277
916B1

Abstract: No abstract text available
Text: DRAWING MADE IN THIRD ANGLE PROJECTION 7 6 5 0> 4 3 D C A THIS DRAWING 15 UNPUBLI5HED RELEASED FOR PUBLICATION 1 9 COPYRIGHT 19 BY ANP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. 53. 34 [2.1 00] MAX — 44 . 65 [1 . 758]- SB*- 58» 0.94±0.05 TYP [ . 037±. 002] □J > z A — 2.41 + 0 . 08 -0 . 1 095 + . 003 - . 004 8.74± 0.05 [ . 344±.002] 47. 12± 0. 1 [1 .855±.004] 02.59+0.05 TYP [ . 102+.002 ] 4„9±0.05 TYP [ „ 193+.002] 48.26[1.900] m m m c im im im im im im im im im im im im im im im


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PDF 10Y2Y92 18-MAY-01 amp40973 /home/amp40973/edmmod 916B1
2002 - MS1079

Abstract: HF SSB APPLICATIONS
Text: /W Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7052 Rev - 10-2002 MS1079 , MHz f2 = 30.001 MHz 053-7052 Rev - 10-2002 MS1079 TYPICAL PERFORMANCE 053-7052 Rev - 10-2002 MS1079 PACKAGE MECHANICAL DATA 053-7052 Rev - 10-2002 Advanced Power Technology


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PDF MS1079 MS1079 150mA HF SSB APPLICATIONS
2002 - Not Available

Abstract: No abstract text available
Text: Resistance 1.2 °C/W MS1504 053-7085 Rev - 10-2002 MS1504 RF & MICROWAVE TRANSISTORS P , () 1.0 + j 0.4 ZCL () 2.3 + j 0.1 ELECTRICALS 053-7085 Rev - 10-2002 MS1504 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW PACKAGE DATTA 053-7085 Rev - 10-2002 MS1504 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW NOTES 053-7085 Rev - 10-2002 Advanced Power Technology


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PDF MS1504 MS1504
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