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TS3DDR3812RUAR Texas Instruments 12-Channel, 1:2 MUX/DEMUX Switch for DDR3 Applications 42-WQFN -40 to 85
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DDR3 1333 204P 1GB ADLINK Technology Inc Avnet - $28.09 $24.59
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DDR3-1333 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - RDIMM

Abstract: No abstract text available
Text: backup size • Saves costs • Saves space Key Features & Specs • DDR3-1333 RDIMM 24mm height (1GB 1R x8, 2GB 1R x8) • DDR3-1333 RDIMM 30mm height (4GB 2R x8, 8GB 2R x8) • Fits standard 240 , survive multiple power glitches without losing protected data. Ordering Information DDR3-1333 Flash , 2R x8 DeviceType DDR3-1333 DDR3-1333 DDR3-1333 DDR3-1333 Top 133.35 11.00 24.00 11.50


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PDF DDR3-1333 SGN72288FH8P6PH SGN72568FH8P0PH SGN72128FH8P0PH SGN72128FH8P6PH DDR3-1333 11/flashback/Rev RDIMM
ati es1000 specification

Abstract: No abstract text available
Text: /L5638/E5645 processors Six memory sockets support DDR3-1066/ DDR3-1333 * REG/ECC up to 48 GB maximum capacity (* DDR3-1333 is supported by Intel® 5600 series CPU only) Intel® 82599 10GbE controller , Six DDR3-1066/ DDR3-1333 * 240-pin RDIMM sockets, up to 48 GB * DDR3-1333 is supported by Intel 5600 , 10GbE Six DDR3-1333 RDIMM sockets 2 6U cPCI Blades Two Intel® Xeon™ L5638/L5618/L5518 , Indicators and Reset Optional AMC or on-board HDD Functional Diagram 4 DDR3-1333 RDIMM Intel® XeonÂ


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PDF aTCA-6105A/6155A L5518/L5638/E5645 10GbE L5518/L5638/E5645 DDR3-1066/ DDR3-1333* DDR3-1333 10GBASE-KX4 L5638 ati es1000 specification
WL4 550

Abstract: samsung ddr3 pinout 244
Text: calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst , (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address VIHCA(AC) VILCA(AC) DQ and DM VIHDQ(AC , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 , #) Input capacitance (CK0, CK0#) K0 (DDR3-1600) Input/Output capacitance (DQ, DQS, DQS#, DM, CB) K9 ( DDR3-1333


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PDF VL53D5263E-K0/K9/F8S 512Mx72 244-PIN VL53D5263E 256Mx8 28-bit 244-pin WL4 550 samsung ddr3 pinout 244
2003 - DDR3-1333

Abstract: DDR2-1066 ASIC 104-FBGA XDR Rambus DDR400 ddr3 1333 DDR333 gddr3 XDR DRAM
Text: ASIC x128 bus, 12.8GB/s ASIC x128 bus, 21.6GB/s 256Mb GDDR3-1600 DDR3-1333 x64 bus , ASIC x32 bus, 6.4GB/s DDR3-1333 ASIC 256-512Mb GDDR3-1600 (x32) x32 bus, 5.4GB/s DDR3-1333 64MB/system 8GB/s ASIC x64 bus, 5.2GB/s 4.0GHz XDR x16 bus, 6.4GB/s DDR2-667 ASIC DDR2-1066 ASIC 512Mb DDR3-1333 (x16) DDR2-800 32MB/system 5GB/s 256Mb DDR2 (x16) DDR3-1333 512Mb XDR (x16 mode) 3.2GHz XDR MB/System GB/s x64 bus, 12.8GB/s


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PDF 512Mb 512Mb x16I/ODRAM6 400MHz, 500MHz, 600MHz I/ODRSL200V DDR333 104FBGA DDR2-667 DDR3-1333 DDR2-1066 ASIC 104-FBGA XDR Rambus DDR400 ddr3 1333 DDR333 gddr3 XDR DRAM
DDR3-1333

Abstract: DDR3 DIMM SPD JEDEC DDR3 DIMM SPD DDR3 DIMM 240 clock termination DDR3 SPD sensor ddr3 DDR3 1333 2Rx8 1333 DDR3 SPD
Text: Memory Module Specifications KVR1333D3E9S/4GHB 4GB 2Rx8 512M x 72-Bit DDR3-1333 CL9 ECC 240 , document describes ValueRAM's 512M x 72-bit (4GB) 2Rx8 DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory module, based on eighteen 256Mx 8-bit DDR3-1333 FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact fingers and requires +1.5V. , Programmable Additive Latency: 0, CL - 2, or CL - 1 clock · Programmable CAS Write Latency(CWL) = 7( DDR3-1333


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PDF KVR1333D3E9S/4GHB 72-Bit DDR3-1333 240-Pin 160ns 72-bit 256Mx DDR3 DIMM SPD JEDEC DDR3 DIMM SPD DDR3 DIMM 240 clock termination DDR3 SPD sensor ddr3 DDR3 1333 2Rx8 1333 DDR3 SPD
2010 - PC3-14900

Abstract: pc3-10600 DDR3 DIMM SPD DDR3 DIMM SPD LRDIMM LRDIMM SPD LRDIMM DDR3-1866 DDR3-2133 DDR3-1866 RDIMM SPD JEDEC minidimm
Text: -800 -1G0 -187 DDR3-1066 -1G1 -187E DDR3-1066 -1G2 -187F DDR3-1066 -1G3 -15 DDR3-1333 -1G4 -15E DDR3-1333 -1S4 -15H DDR3-1333 -1G5 -15F DDR3-1333 -1GA* -125 DDR3-1333 -1G6 -125 DDR3 , -107F DDR3-1866 -2G1 -093 DDR3-2133 -2G2 -093E DDR3-2133 -2G3 -093F DDR3-2133 * -1GA = - 1333 , 800 800 800 933 933 933 1067 1067 1067 Data Rate (MT/s) 800 800 1066 1066 1066 1333 1333 1333 1333 1333 1600 1600 1600 1866 1866 1866 2133 2133 2133 Module Bandwidth PC3


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PDF
2012 - samsung ddr3 ram MTBF

Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 k4B2G1646 KLMAG KLMAG2GE4A-A001 K4B2G0446 klm8g KLM8G2FE3B-B001 K4H561638N
Text: -1866 (13-13-13) * K0 (1600Mbps) available in ES only H9 = DDR3-1333 (9-9-9) 08 = IDT A1 K0 = DDR3 , Notes: 04 = IDT B0 register F8 = DDR3-1066 (7-7-7) 05 = Inphi C0 register H9 = DDR3-1333 , Now Now Now Now Now Now Now Now Now NOTES: F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 , 1 1 2 2 1 2 2 1 2 1 1 2 2 1 2 2 Notes: F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 , NOTES: F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) NB = DDR3-2133 (14-14-14) * MA, and NB are


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PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 k4B2G1646 KLMAG KLMAG2GE4A-A001 K4B2G0446 klm8g KLM8G2FE3B-B001 K4H561638N
samsung ddr3 pinout 244

Abstract: samsung DDR3 SDRAM 2GB THz sensor
Text: calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst , (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address , -1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V Input High (Logic 1 , #) Input capacitance (CK0, CK0#) K0 (DDR3-1600) Input/Output capacitance (DQ, DQS, DQS#, DM, CB) K9 ( DDR3-1333


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PDF VL53D5763E-K0/K9/F8S 256Mx72 244-PIN VL53D5763E 256Mx8 28-bit 244-pin 244-pin, samsung ddr3 pinout 244 samsung DDR3 SDRAM 2GB THz sensor
Not Available

Abstract: No abstract text available
Text: Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8 , ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600 , VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.150 V Tel 949.888.2444 – 30052 , pF K0 (DDR3-1600) Input/Output capacitance (DQ, DQS, DQS#, DM, CB) K9 ( DDR3-1333 ) F8 (DDR3


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PDF VL53D5763E-K0/K9/F8S 256Mx72 244-PIN VL53D5763E 256Mx8 28-bit 244-pin
DDR3 DIMM 240 pinout

Abstract: TERR
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command , ) Voltage (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V , Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max


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PDF VL31D1G63A-K0/K9/F8S 1Gx72 240-PIN VL31D1G63A 512Mx8 240-pin 240-pin, DDR3 DIMM 240 pinout TERR
samsung ddr3 pinout 244

Abstract: VL51D5263F ddr3-1066
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command , ) Voltage (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V , Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max


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PDF VL51D5263F-K0/K9/F8S 512Mx72 244-PIN VL51D5263F 256Mx8 244-pin 244-pin, samsung ddr3 pinout 244 ddr3-1066
samsung ddr3 pinout 244

Abstract: No abstract text available
Text: calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst , (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address VIHCA(AC) VILCA(AC) DQ and DM VIHDQ(AC , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 , #) Input capacitance (CK0, CK0#) K0 (DDR3-1600) Input/Output capacitance (DQ, DQS, DQS#, DM, CB) K9 ( DDR3-1333


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PDF VL53D1G63E-K0/K9/F8S 1Gx72 244-PIN VL53D1G63E 512Mx8 28-bit 244-pin 244-pin, samsung ddr3 pinout 244
Not Available

Abstract: No abstract text available
Text: Programmable CAS# latency: 9 ( DDR3-1333 ) Programmable burst; length (8) Average refresh period 7.8 us , (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address , -1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V Input High (Logic 1 , , DQS, DQS#, DM, CB) K9 ( DDR3-1333 ) F8 (DDR3-1066) CIO 1.5V Unit Min 5.5 5.5 5.5 7 7 7 Symbol Min


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PDF VL33D1G63E-K0/K9/F8S 1Gx72 240-PIN VL33D1G63E 512Mx8 28-bit 240-pin 240-pin,
Not Available

Abstract: No abstract text available
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address VIHCA(AC) VILCA(AC) DQ and DM VIHDQ(AC , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 , (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max F8 (DDR3-1066) Min Max Unit 1.35V Input


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PDF VL51D1G69F-K0/K9/F8S 1Gx72 244-PIN VL51D1G69F 244-pin 244-pin,
Not Available

Abstract: No abstract text available
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command , ) Voltage (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V , Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max


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PDF VL51D5763F-K0/K9/F8S 256Mx72 244-PIN VL51D5763F 256Mx8 244-pin 244-pin,
2012 - K4H511638JLCCC

Abstract: K9HFGY8S5A-HCK0 K4X2G323PD8GD8 samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 k4x2g323pd KLMAG2GE4A K4G10325FG-HC03 gddr5 samsung
Text: -1866 (13-13-13) * K0 (1600Mbps) available in ES only H9 = DDR3-1333 (9-9-9) 08 = IDT A1 K0 = DDR3 , Notes: 04 = IDT B0 register F8 = DDR3-1066 (7-7-7) 05 = Inphi C0 register H9 = DDR3-1333 , Now Now Now Now Now Now Now Now Now NOTES: 6 F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 , -1066 (7-7-7) H9 = DDR3-1333 (9-9-9) K0 = DDR3-1600 (11-11-11) Now Now Now Now Now Now Now Now , =8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP


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PDF BR-12-ALL-001 K4H511638JLCCC K9HFGY8S5A-HCK0 K4X2G323PD8GD8 samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 k4x2g323pd KLMAG2GE4A K4G10325FG-HC03 gddr5 samsung
Not Available

Abstract: No abstract text available
Text: CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8) Average , ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600 , VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.150 V Tel 949.888.2444 – 30052 , =100MHz Parameter Symbol K0 (DDR3-1600) K9 ( DDR3-1333 ) F8 (DDR3-1066) Min Max Min Max


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PDF VL41D1G63B-K0/K9/F8S 1Gx72 204-PIN VL41D1G63B 512Mx8 204-pin 204-pin,
Not Available

Abstract: No abstract text available
Text: : 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8) Average refresh period , VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.135 V 1.5V Command and Address , ) Voltage (DDR3-1066) - VREF - 0.175 V VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF -


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PDF VL51D5263F-K0/K9/F8S 512Mx72 244-PIN VL51D5263F 256Mx8 244-pin 244-pin,
Not Available

Abstract: No abstract text available
Text: Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8 , ) Voltage ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 , V VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.150 V Tel 949.888.2444 â , =100MHz Parameter Symbol K0 (DDR3-1600) K9 ( DDR3-1333 ) F8 (DDR3-1066) Min Max Min Max


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PDF VL41D5763B-K0/K9/F8S 256Mx72 204-PIN VL41D5763B 256Mx8 204-pin 204-pin,
Not Available

Abstract: No abstract text available
Text: dynamic on-die termination (ODT) ZQ calibration support Programmable CAS# latency: 9 ( DDR3-1333 ), 7 , (Logic 1) Voltage DDR3-1333 VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage DDR3-1333 - VREF - 0.150 V K9 ( DDR3-1333 ) E7/F8 (DDR3-800/1066) DQ and DM Input/Output , : 1.1 IDD Specification Condition (2) (2) Symbol K9 ( DDR3-1333 ) F8 (DDR3 , ( DDR3-1333 ) Symbol F8 (DDR3-1066) E7 (DDR3-800) Unit MIN MAX MIN MAX MIN


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PDF VL51B2863F-K9S/F8S/F7S 128Mx72 244-PIN VL51B2863F 128Mx8 244-pin 244-pin, VN-031209
DDR3 ECC UDIMM 240 pinout

Abstract: No abstract text available
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command , ) Voltage (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V , Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max


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PDF VL31D1G63E-K0/K9/F8S 1Gx72 240-PIN VL31D1G63E 512Mx8 240-pin 240-pin, DDR3 ECC UDIMM 240 pinout
Not Available

Abstract: No abstract text available
Text: Programmable CAS# latency: 9 ( DDR3-1333 ) Programmable burst; length (8) Average refresh period 7.8 us , (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command and Address , -1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V Input High (Logic 1 , , DQS, DQS#, DM, CB) K9 ( DDR3-1333 ) F8 (DDR3-1066) CIO 1.5V Unit Min 5.5 5.5 5.5 7 7 7 Symbol Min


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PDF VL33D5263E-K0/K9/F8S 512Mx72 240-PIN VL33D5263E 256Mx8 28-bit 240-pin 240-pin,
Not Available

Abstract: No abstract text available
Text: : 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8) Average refresh period , VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.135 V 1.5V Command and Address , ) Voltage (DDR3-1066) - VREF - 0.175 V VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF -


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PDF VL51D5763F-K0/K9/F8S 256Mx72 244-PIN VL51D5763F 256Mx8 244-pin 244-pin,
Not Available

Abstract: No abstract text available
Text: Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3-1066) Programmable burst; length (8 , V VIHDQ(AC) Input High (Logic 1) Voltage ( DDR3-1333 /1600) VREF + 0.135 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) - VREF - 0.135 V 1.5V Command and , ) Voltage ( DDR3-1333 /1600) VREF + 0.150 - V VILDQ(AC) Input Low (Logic 0) Voltage ( DDR3-1333 , Input/Output Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) K9 ( DDR3-1333


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PDF VL41D5763B-K0/K9/F8S 256Mx72 204-PIN VL41D5763B 256Mx8 204-pin 204-pin,
minidimm

Abstract: ddr3 vlp 244 pin VL51D1G63E-K0
Text: ) ZQ calibration support Programmable CAS# latency: 11 (DDR3-1600), 9 ( DDR3-1333 ), 7 (DDR3 , -1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) 1.5V Command , ) Voltage (DDR3-1066) Input Low (Logic 0) Voltage (DDR3-1066) Input High (Logic 1) Voltage ( DDR3-1333 /1600) Input Low (Logic 0) Voltage ( DDR3-1333 /1600) VREF + 0.175 VREF + 0.150 VREF - 0.175 VREF - 0.150 V V V V , Capacitance 0 TA=25 C, f=100MHz Parameter Symbol K0 (DDR3-1600) Min Max K9 ( DDR3-1333 ) Min Max


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PDF VL51D1G63E-K0/K9/F8S 1Gx72 244-PIN VL51D1G63E 512Mx8 244-pin 244-pin, minidimm ddr3 vlp 244 pin VL51D1G63E-K0
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