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2003 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD72V6D5 Description Placement The TS16MLD72V6D5 is a 16M x 72bits Double Data Rate SDRAM high-density for DDR266. , 184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD72V6D5 Dimensions Pin Identification , Select Input. /RAS (Refer Placement) Clock Enable Input. No Connection 184PIN DDR266 , 184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD72V6D5 Block Diagram A0~A11, BA0,BA1


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PDF 184PIN DDR266 128MB 16Mx8 TS16MLD72V6D5 TS16MLD72V6D5 72bits DDR266.
HYB25D512400BG

Abstract: LFXP20C samsung K4 ddr TN1050 EC20 DDR-266 mt46v8m16 lfxp6c
Text: Max Data Rate Clock Speed 32Mx4 DDR266 MT46V16M8TG 16Mx8 DDR333 DDR266 133MHz 167MHz 133MHz MT46V8M16TG 8Mx16 DDR266 133MHz MT46V64M4FG 64Mx4 DDR400 200MHz , MT46V128M4FN MT46V128M4TG Micron 512MB 16Mx16 32Mx16 9-32 DDR333 DDR266 DDR400 DDR333 DDR266 DDR400 DDR333 DDR266 DDR400 200MHz 167MHz 133MHz 200MHz 167MHz 133MHz DDR333 DDR266 200MHz 167MHz 133MHz DDR266 133MHz DDR400 200MHz 167MHz 133MHz DDR333 DDR266 DDR400 DDR333


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PDF TN1050 DQSFPGA90 90DQDQS 9-29-3DQDQS/ SDRAMDQSx8x16x32 DQS8DDR10 I/O1DQS8DQ1DMLatticeECP/ECLatticeXP16I/O DQSLatticeXP14I/ODQS 200MHzREAD HYB25D512400BG LFXP20C samsung K4 ddr EC20 DDR-266 mt46v8m16 lfxp6c
2005 - DDR333

Abstract: micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
Text: DDR200 DDR266 2 100 MHz 133 MHz 1 200M / 266M / ( M , DDR266 tRCD 20ns 3 (20ns / 7.5ns = 2.7 ) 1 (EQ 1) t RCD 22.5ns (22.5ns = 3 x 7.5ns) DDR333 18ns tRCD 3 (18ns / 6ns = 3 ) DDR266 18ns , tRCD JEDED DDR333 DDR266 (22.5ns 15ns) 3 (22.5ns) PDF , tCK = 10ns tRCD DDR266 ( tRCD ) = tRCD (JEDEC) = 2 × tCK = 20ns ( = 22.5ns) 0ns


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PDF TN-46-13 MT46V64M8) DDR200 DDR266 DDR333 DDR400 09005aef81c057dd/Source: DDR333 micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
2007 - sdram pcb layout guide

Abstract: vhdl code for sdr sdram controller memory Controller FPGA EC20 TN1050 samsung K4 ddr dqs detect DDR400 infineon sdr sdram pcb layout guidelines 256MX4
Text: No file text available


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PDF TN1050 200MHz LatticeEC20 sdram pcb layout guide vhdl code for sdr sdram controller memory Controller FPGA EC20 TN1050 samsung K4 ddr dqs detect DDR400 infineon sdr sdram pcb layout guidelines 256MX4
DDR266

Abstract: No abstract text available
Text: Memory Module Specification KVR266X64SC25/1G 1GB 128M x 64-Bit DDR266 CL2.5 200-Pin SODIMM DESCRIPTION: This document describes ValueRAM's 128M x 64-bit (1GB) CL2.5 SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module include sixteen 64M x 8-bit (16M x 8-bit x 4 Bank) DDR266 SDRAM sealed in TCP packages. This 200pin DIMM uses gold contact fingers and requires +2.5V. The , Tolerances : ±.006(.15) unless otherwise specified Figure 1: KVR266X64SC25/1G 200-Pin DDR266 Document No


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PDF KVR266X64SC25/1G 64-Bit DDR266 200-Pin 64-bit DDR266 200pin 000ns KVR266X64SC25/1G
2003 - Not Available

Abstract: No abstract text available
Text: 184 PIN DDR266 Unbuffered DIMM 64MB With 8Mx16 CL2.5 TS8MLD64V6C5 Description Placement The TS8MLD64V6C5 is a 8M x 64bits Double Data Rate SDRAM high density for DDR266. The TS8MLD64V6C5 , Interleave) Transcend Information Inc. 1 184 PIN DDR266 Unbuffered DIMM 64MB With 8Mx16 CL2 , 184 PIN DDR266 Unbuffered DIMM 64MB With 8Mx16 CL2.5 TS8MLD64V6C5 Pinouts: Pin Pin Pin No , VDDQ SA0 SA1 SA2 VDDSPD 184 PIN DDR266 Unbuffered DIMM 64MB With 8Mx16 CL2.5 TS8MLD64V6C5


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PDF DDR266 8Mx16 TS8MLD64V6C5 TS8MLD64V6C5 64bits DDR266. 400mil 184-pin
Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Unbuffered DIMM 256MB With 32Mx16 CL2.5 TS32MLD64V6M Placement Description , ,8 ) Data Sequence (Sequential & Interleave) Transcend Information Inc. 1 184PIN DDR266 , Transcend Information Inc. Address in EEPROM No Connection 184PIN DDR266 Unbuffered DIMM 256MB , DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD 184PIN DDR266 , . Transcend Information Inc. 4 184PIN DDR266 Unbuffered DIMM 256MB With 32Mx16 CL2.5 TS32MLD64V6M


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PDF 184PIN DDR266 256MB 32Mx16 TS32MLD64V6M TS32MLD64V6M 64bits 400mil
2007 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 ECC Registered DIMM 256MB With 32Mx8 CL2.5 TS32MDR72V6F5 Description Placement The TS32MDR72V6F5 is a 32M x 72bits Double Data Rate SDRAM high-density for DDR266. , Interleave) Transcend Information Inc. 1 184PIN DDR266 ECC Registered DIMM 256MB With 32Mx8 CL2 , Transcend Information Inc. Power Supply No Connection 184PIN DDR266 ECC Registered DIMM 256MB With , DQ54 DQ55 VDDQ NC DQ60 DQ61 VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD 184PIN DDR266


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PDF 184PIN DDR266 256MB 32Mx8 TS32MDR72V6F5 TS32MDR72V6F5 72bits DDR266.
2005 - Not Available

Abstract: No abstract text available
Text: 200PIN DDR266 Unbuffered SO-DIMM 512MB With 32Mx16 CL2.5 TS64MSD64V6M Description Placement The TS64MSD64V6M is a 32M x 64bits Double Data Rate SDRAM high-density for DDR266.The , DDR266 Unbuffered SO-DIMM 512MB With 32Mx16 CL2.5 TS64MSD64V6M Dimensions Side Pin , DDR266 Unbuffered SO-DIMM 512MB With 32Mx16 CL2.5 TS64MSD64V6M Pinouts: Pin Pin Pin Pin No , DU 200PIN DDR266 Unbuffered SO-DIMM 512MB With 32Mx16 CL2.5 TS64MSD64V6M Block Diagram A0


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PDF 200PIN DDR266 512MB 32Mx16 TS64MSD64V6M TS64MSD64V6M 64bits
2005 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Registered DIMM 512MB With 64Mx8 CL2.5 TS64MDR72V6J Description Placement The TS64MDR72V6J is a 64M x 72bits Double Data Rate SDRAM high-density for DDR266. The TS64MDR72V6J , ) Transcend Information Inc. 1 184PIN DDR266 Registered DIMM 512MB With 64Mx8 CL2.5 TS64MDR72V6J , Information Inc. Power Supply No Connection 184PIN DDR266 Registered DIMM 512MB With 64Mx8 CL2 , NC DQ60 DQ61 VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD 184PIN DDR266 Registered DIMM


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PDF 184PIN DDR266 512MB 64Mx8 TS64MDR72V6J TS64MDR72V6J 72bits DDR266.
DDR266

Abstract: No abstract text available
Text: Memory Module Specifications KVR266X64SC25/1G 1GB 128M x 64-Bit DDR266 CL2.5 200-Pin SODIMM DESCRIPTION This document describes ValueRAM's 128M x 64-bit (1GB) CL2.5 SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module include sixteen 64M x 8-bit (16M x 8-bit x 4 Bank) DDR266 SDRAM sealed in TCP packages. This 200-pin DIMM uses gold contact fingers and requires +2.5V. The , -Pin DDR266 Protective Cover Protective Cover Kingston.com Document No. VALUERAM0294-001.A00 04


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PDF KVR266X64SC25/1G 64-Bit DDR266 200-Pin 64-bit 000ns
Not Available

Abstract: No abstract text available
Text: Memory Module Specifications KVR266X64SC25/512 512MB 64M x 64-Bit DDR266 CL2.5 200-Pin SODIMM DESCRIPTION This document describes ValueRAM's 64M x 64-bit (512MB) CL2.5 SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module include sixteen 32M x 8-bit (8M x 8-bit x 4 Bank / 133MHz, 7.5ns, CL2.5) DDR266 SDRAM in uBGA packages. This 200-pin DIMM uses gold contact fingers and requires , -Pin DDR266 Kingston.com Document No. VALUERAM0249-001.A00 06/12/02 -


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PDF KVR266X64SC25/512 512MB 64-Bit DDR266 200-Pin 64-bit 512MB) 133MHz,
2009 - K4H511638G

Abstract: K4H510438G K4H510838G-LC K4H510838G K4H511638G-LC/LCC
Text: K4H511638G-LC/LB3 Org. 128M x 4 64M x 8 32M x 16 Max Freq. B0( DDR266@CL=2.5 ) B3(DDR333@CL=2.5) CC(DDR400@CL , =2.5) 133MHz 166MHz 2.5-3-3 B0( DDR266@CL=2.5 ) 100MHz 133MHz 2.5-3-3 4 of 24 Rev. 1.1 November 2009 , (DDR333@CL=2.5) 65 75 5 23 20 15 35 80 95 110 5 3 210 B0( DDR266@CL=2.5 ) 55 65 5 23 20 15 35 75 80 90 5 3 , /tCK) 1 +0.7 +0.7 12 12 0.55 0.55 +0.6 +0.7 0.4 1.1 0.6 1.25 70K DDR SDRAM B0 ( DDR266@CL=2.5 ) Min , K4H511638G 1.0 Key Features · VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266 , 333 · VDD : 2.6V ± 0.1V


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PDF K4H510438G K4H510838G K4H511638G 512Mb sa-10 K4H511638G K4H510838G-LC K4H511638G-LC/LCC
MPDA82D-68KX3

Abstract: Kingmax PD Kingmax ddr
Text: MPDA82D - 68KX3 DDR SDRAM IDD spec table Symbol ( DDR266@CL=2.5 ) typical worst typical worst , Active-Precharge; tRC=tRCmin; 133Mhz for DDR266 ; DQ,DM and DQS inputs changing twice per clock cycle; address , ); 133Mhz for DDR266 ; Vin = Vref for DQ,DQS and DM IDD2P - - Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); 133Mhz for DDR266 ; Address and other control , standby current; CS# > = VIH(min); All banks idle; CKE > = VIH(min); 133Mhz for DDR266 ; Address and


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PDF MPDA82D 68KX3 MPDA82D-68KX3 16Mx64 184pin 16Mx8 MPDA82D-68KX3 128Mb 133MHz Kingmax PD Kingmax ddr
2003 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Unbuffered DIMM 256MB With 32Mx8 CL2.5 TS32MLD64V6F5 Description Placement The TS32MLD64V6F5 is a 32M x 64bits Double Data Rate SDRAM high-density for DDR266. The , ) Data Sequence (Sequential & Interleave) Transcend Information Inc. 1 184PIN DDR266 Unbuffered , Connection (Refer Placement) Transcend Information Inc. 2 184PIN DDR266 Unbuffered DIMM 256MB , 184PIN DDR266 Unbuffered DIMM 256MB With 32Mx8 CL2.5 TS32MLD64V6F5 Block Diagram /CS0 /CS


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PDF 184PIN DDR266 256MB 32Mx8 TS32MLD64V6F5 TS32MLD64V6F5 64bits DDR266.
2006 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Registered DIMM 512MB With 64Mx8 CL2.5 TS64MDR72V6J Description Placement The TS64MDR72V6J is a 64M x 72bits Double Data Rate SDRAM high-density for DDR266. The TS64MDR72V6J , & Interleave) Transcend Information Inc. 1 184PIN DDR266 Registered DIMM 512MB With 64Mx8 , SCL Transcend Information Inc. Power Supply No Connection 184PIN DDR266 Registered DIMM , 184PIN DDR266 Registered DIMM 512MB With 64Mx8 CL2.5 TS64MDR72V6J Block Diagram /CS0 DQS4 DQS0


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PDF 184PIN DDR266 512MB 64Mx8 TS64MDR72V6J TS64MDR72V6J 72bits DDR266.
2002 - K4H511638D-UC

Abstract: samsung sdram for 32Mx16 DDR266 DDR333 DDR400 K4H510438D K4H510838D K4H511638D
Text: ( DDR266@CL=2 ) B0( DDR266@CL=2.5 ) Interface Package SSTL_2 66pin TSOP II SSTL_2 66pin TSOP , B3(DDR333@CL=2.5) A2( DDR266@CL=2 ) K4H510838D-UC/LB0 B0( DDR266@CL=2.5 ) K4H511638D-UC/LCC , (DDR333@CL=2.5) A2( DDR266@CL=2 ) B0( DDR266@CL=2.5 ) 3.0 Operating Frequencies CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2( DDR266@CL=2.0 ) B0( DDR266@CL=2.5 ) Speed @CL2 - 133MHz 133MHz 100MHz , (VDD=2.7V, T = 10°C) 128Mx4 (K4H510438D) A2( DDR266@CL=2.0 ) Unit Notes B0( DDR266@CL=2.5


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PDF K4H510438D K4H510838D K4H511638D 512Mb equip-65 K4H511638D-UC samsung sdram for 32Mx16 DDR266 DDR333 DDR400 K4H510438D K4H510838D K4H511638D
2002 - K4H511638D-UC

Abstract: ddr266 DDR333 DDR400 K4H510438D K4H510838D K4H511638D
Text: K4H510838D-UC/LCC Max Freq. A2( DDR266@CL=2 ) B0( DDR266@CL=2.5 ) Interface Package SSTL_2 66pin , K4H511638D-UC/LB0 B3(DDR333@CL=2.5) A2( DDR266@CL=2 ) B0( DDR266@CL=2.5 ) 3.0 Operating Frequencies CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2( DDR266@CL=2.0 ) B0( DDR266@CL=2.5 ) Speed @CL2 - 133MHz , (VDD=2.7V, T = 10°C) 128Mx4 (K4H510438D) A2( DDR266@CL=2.0 ) Unit Notes B0( DDR266@CL=2.5 , (DDR333@CL=2.5) A2( DDR266@CL=2.0 ) B0( DDR266@CL=2.5 ) Unit Notes IDD0 120 105 95 95 mA


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PDF K4H510438D K4H510838D K4H511638D 512Mb K4H511638D-UC ddr266 DDR333 DDR400 K4H510438D K4H510838D K4H511638D
DDR266

Abstract: No abstract text available
Text: Memory Module Specification KVR266X64C2/128 128MB 16M x 64-Bit DDR266 CL2 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 16M x 64-bit (128MB) CL2 DDR266 SDRAM (Synchronous DRAM) memory module. The components on the module include eight 16M x 8-bit (4M x 8-bit x 4 Bank / 133MHz, 7.5ns, CL2 components) DDR266 SDRAM in TSOP packages. This 184-pin DIMM uses gold contact fingers and requires +2.5V. The electrical and mechanical specifications are as follows: FEATURES: Clock Cycle Time


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PDF KVR266X64C2/128 128MB 64-Bit DDR266 184-Pin 64-bit 128MB) DDR266 133MHz,
2002 - Not Available

Abstract: No abstract text available
Text: Memory Module Specification KVR266X72RC25L/2G 2GB 256 x 72-Bit DDR266 Registered CL2.5 ECC 184-Pin DIMM Module DESCRIPTION: This document describes ValueRAM's 256M x 72-bit (2GB) DDR266 CL2.5 SDRAM (Synchronous DRAM) Registered ECC memory module. The components on this module include eighteen stacked 256M x 4-bit (thirty-six 128M x 4-Bit) DDR266 SDRAM and three 16-bit drivers in TSSOP packages. This 184-pin DIMM uses gold contact fingers and requires +2.5V. The electrical and mechanical specifications are as


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PDF KVR266X72RC25L/2G 72-Bit DDR266 184-Pin 72-bit 16-bit KVR266X72RC25L/2G
2003 - Not Available

Abstract: No abstract text available
Text: DDR266.The TS32MSD64V6G5 consists of 8pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II , 200PIN DDR266 Unbuffered SO-DIMM 256MB With 16Mx16 CL2.5 TS32MSD64V6G5 Description , Inc. 1 K 200PIN DDR266 Unbuffered SO-DIMM 256MB With 16Mx16 CL2.5 TS32MSD64V6G5 , No Connection 200PIN DDR266 Unbuffered SO-DIMM 256MB With 16Mx16 CL2.5 TS32MSD64V6G5 Pinouts , DQ63 VDD SA0 SA1 SA2 DU 200PIN DDR266 Unbuffered SO-DIMM 256MB With 16Mx16 CL2


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PDF 200PIN DDR266 256MB 16Mx16 TS32MSD64V6G5 TS32MSD64V6G5 64bits
2005 - Not Available

Abstract: No abstract text available
Text: Memory Module Specification KVR266S4R25/512I 512MB 64M x 72-Bit DDR266 CL2.5 Registered ECC 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 64M x 72-bit (512MB) DDR266 CL2.5 SDRAM (Synchronous DRAM) "single rank" Registered ECC "Intel ® Certified" memory module. The components on this module include eighteen 64M x 4-bit (16M x 4-bit x 4 Bank) DDR266 components in TSOP packages. This 184-pin DIMM uses gold contact fingers and requires +2.5V. The electrical and mechanical specifications are as


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PDF KVR266S4R25/512I 512MB 72-Bit DDR266 184-Pin 72-bit 512MB)
2005 - Not Available

Abstract: No abstract text available
Text: 184 PIN DDR266 Registered DIMM 512MB With 32Mx8 CL2.5 TS64MDR72V6F5 Description Placement The TS64MDR72V6F5 is a 64Mx72bits Double Data Rate SDRAM high-density for DDR266. The , DDR266 Registered DIMM 512MB With 32Mx8 CL2.5 TS64MDR72V6F5 Dimensions Side Pin Identification , No Connection 184 PIN DDR266 Registered DIMM 512MB With 32Mx8 CL2.5 TS64MDR72V6F5 Pinouts , VSS DM7 DQ62 DQ63 VDDQ SA0 SA1 SA2 VDDSPD 184 PIN DDR266 Registered DIMM 512MB With 32Mx8


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PDF DDR266 512MB 32Mx8 TS64MDR72V6F5 TS64MDR72V6F5 64Mx72bits DDR266. 18pcs
DDR266

Abstract: No abstract text available
Text: Memory Module Specification KVR266X64SC25/512 512MB 64M x 64-Bit DDR266 CL2.5 200-Pin SODIMM DESCRIPTION: This document describes ValueRAM's 64M x 64-bit (512MB) CL2.5 SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module include sixteen 32M x 8-bit (8M x 8-bit x 4 Bank / 133MHz, 7.5ns, CL2.5) DDR266 SDRAM in uBGA packages. This 200-pin DIMM uses gold contact fingers and requires , (.15) unless otherwise specified Figure 1: KVR266X64SC25/512 200-Pin DDR266 Document No


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PDF KVR266X64SC25/512 512MB 64-Bit DDR266 200-Pin 64-bit 512MB) DDR266 133MHz,
2003 - Not Available

Abstract: No abstract text available
Text: 184PIN DDR266 Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD64V6F5 1Description Placement , ) Data Sequence (Sequential & Interleave) Transcend Information Inc. 1 184PIN DDR266 Unbuffered , Transcend Information Inc. Address in EEPROM No Connection 184PIN DDR266 Unbuffered DIMM 512MB , 184PIN DDR266 Unbuffered DIMM 512MB With 32Mx8 CL2.5 TS64MLD64V6F5 Block Diagram /CS CKE0 , specifications at any time without prior notice. Transcend Information Inc. 4 184PIN DDR266 Unbuffered


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PDF 184PIN DDR266 512MB 32Mx8 TS64MLD64V6F5 TS64MLD64V6F5 64Mx64bits PC-266. 16pcs
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