The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1356CS16 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDSO16, Operational Amplifier
LT1356CN14 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP14, Operational Amplifier
LT1056MN8 Linear Technology IC OP-AMP, 800 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1014DS Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1014IS Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1367CS8 Linear Technology IC QUAD OP-AMP, 800 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier

DDR2-800 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - samsung ddr3

Abstract: DDR3 sodimm 8gb samsung M395T2953EZ4 samsung DDR3 SDRAM 2GB m470t5663cz3 DDR3 DIMM 240 pin names 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
Text: Features of DDR2 and DDR3 DDR2 DDR3 Data Rate 400 - 800 Mbps 800 - 1600 , rack servers. Org Speed (Mbps) Part Number 512MB 64Mx72 400/533/667/ 800 M393T6553EZ3* 1 (64M x8)*9 1GB 128Mx72 400/533/667/ 800 M393T2950EZ3* 1 (128M x4)*18 1GB 128Mx72 400/533/667/ 800 M393T2953EZ3* 2 (64M x8)*18 2GB 256Mx72 400/533/667/ 800 M393T5750EZ3* 2 (128M x4)*36 2GB 256Mx72 400/533/667/ 800 M393T5660CZ3


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PDF BR-07-SDRAM-001 samsung ddr3 DDR3 sodimm 8gb samsung M395T2953EZ4 samsung DDR3 SDRAM 2GB m470t5663cz3 DDR3 DIMM 240 pin names 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
2008 - PC2-6400

Abstract: DDR3-800D PC3-8500 DDR3-1066E pc2-5300 DDR3-1333G EDE5116AJBG EDD1232 ELPIDA DRAM selection guide ddr2 533
Text: SDRAM Organization Internal (word x bit) Banks 512M x 4 8 Grade (CL-tRCD-tRP) DDR2-800 (6-6-6) DDR2-667(5-5-5) DDR2-533(4-4-4) 256M x 8 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) DDR2-533(4-4-4) 128M x 16 8 DDR2-800 , 256M x 4 8 8 DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) 128M x 8 8 DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-800 (5-5-5) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-667(5-5-5) DDR2-533(4-4-4) DDR2-1066(7-7-7


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PDF J1241E80 240-pin 204-pin x32/x16 512Mbit EDX5116ADSE 104-FBGA PC2-6400 DDR3-800D PC3-8500 DDR3-1066E pc2-5300 DDR3-1333G EDE5116AJBG EDD1232 ELPIDA DRAM selection guide ddr2 533
2007 - NT5TU64M8BE

Abstract: PC2-5300 PC2-6400 NT1GT72U4PB0BV-3C DDR2 DIMM 240 pinout
Text: DDR2 SDRAM DIMM Functional Block Diagram (2GB DDR2-800 , 2 Ranks, 128Mx4 DDR2 SDRAMs) Vss DQS0 , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1 , Description DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C 42 , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800


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PDF NT2GT72U4NB0BV NT2GT72U4NB1BV NT512T72U89B0BV NT1GT72U4PB0BV 512MB: 240pin 64Mx8 128Mx4 512MB NT5TU64M8BE PC2-5300 PC2-6400 NT1GT72U4PB0BV-3C DDR2 DIMM 240 pinout
2007 - ddr2 module ecc

Abstract: No abstract text available
Text: -pin DIMM (Pb-free) · Frequency/CAS latency2 ­ 2.5ns @ CL = 5 ( DDR2-800 ) ­ 2.5ns @ CL = 6 ( DDR2-800 ) ­ 3.0ns , (0.70in) Marking P None I Y -80E - 800 -667 -53E -40E Notes: 1. Contact Micron for industrial , = 6 ­ CL = 5 800 CL = 4 533 533 533 533 400 CL = 3 ­ t RCD (ns) 12.5 t RP (ns) t RC (ns) 12.5 55 - 800 -667 -53E -40E PC2-6400 PC2-5300 PC2-4200 PC2-3200 800 ­ ­ ­ 667 667 ­ , Meg x 72 Module Bandwidth 6.4 GB/s 6.4 GB/s Memory Clock/ Data Rate 2.5ns/ 800 MT/s 2.5ns/ 800 MT/s


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PDF 240-Pin MT18HVF12872 MT18HVF25672 240-pin, PC2-3200, PC2-4200, PC2-5300 18-compatible) 09005aef827840fc/Source: 09005aef826fd98c ddr2 module ecc
2010 - AMD Thermal Design Guide socket am3

Abstract: Phenom II X6 AMD ATHLON 64 X2 AM2 pin out TEN54LSDV23GME RADEON e2400 AMD Phenom II AMD turion 64 X2 ATI E2400 TEN40LGAV23GME E2400
Text: Interface DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill HyperTransportTM Interface Three 16 , 71W 50W 71W 50W Memory Interface DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC & Chipkill DDR2-800 2-ch Registered ECC


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PDF 43838H AMD Thermal Design Guide socket am3 Phenom II X6 AMD ATHLON 64 X2 AM2 pin out TEN54LSDV23GME RADEON e2400 AMD Phenom II AMD turion 64 X2 ATI E2400 TEN40LGAV23GME E2400
2009 - EDE2116ACBG

Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D DDR3-800E ELPIDA lpddr EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: 2Gbit 512M x 4 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2104ABSE 8G-E 6E-E 256M x 8 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2108ABSE 8G-E 6E-E B 128M x 16 8 DDR2-800 (6-6-6) DDR2-667(5-5-5) EDE2116ABSE 8G-E 6E-E B 92-FBGA Ask 8 DDR2-1066(7-7-7) DDR2-800 (5-5-5) EDE2116ACBG 1J-F 8E-F C 84-FBGA UD 64M x 32 8 DDR2-1066(7-7-7) DDR2-800 (5-5-5) EDE2132ACBG 1J-F 8E-F C 128-FBGA UD 128M x 8 8 DDR2-800 (5-5-5) DDR2


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PDF E1454E90 240-pin M01E0706 EDE2116ACBG EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D DDR3-800E ELPIDA lpddr EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
2009 - MT47H128M8

Abstract: No abstract text available
Text: 7 (DDR2-1066) – 2.5ns @ CL = 5 ( DDR2-800 ) – 2.5ns @ CL = 6 ( DDR2-800 ) – 3ns @ CL = 5 (DDR2-667) Notes: None I Z -1GA -80E - 800 -667 1. Contact Micron for industrial temperature module , ) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 - 800 PC2-6400 800 667 , (CL-tRCD-tRP) MT18HTF12872A(I)Z-80E_ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5


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PDF 240-Pin MT18HTF12872AZ MT18HTF25672AZ MT18HTF51272AZ MO-237 240-pin, PC2-8500, PC2-6400, PC2-5300, MT47H128M8
2007 - NT5TU64M8BE

Abstract: PC2-5300 PC2-6400 7F7F7F0B00000000
Text: Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1 , Byte Description DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C , Checking DDR2 SDRAM Device Width 15 Reserved 16 DDR2-667 DDR2-800 DDR2-800 DDR2-667 DDR2-800 DDR2-800 -3C -25D -25C -3C -25D -25C Number of Serial PD Bytes Written during Production 1


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PDF NT2GT72U4NB0BV NT2GT72U4NB1BV NT512T72U89B0BV NT1GT72U4PB0BV 512MB: 240pin 64Mx8 128Mx4 512MB NT5TU64M8BE PC2-5300 PC2-6400 7F7F7F0B00000000
2006 - MT47H32M16

Abstract: MT8HTF12864HDY-800 MT47H32M16 DATA SHEET MT8HTF12864HTY MT8HTF3264HDY-40E MT8HTF12864HDY-40E 200 pin SODIMM ddr2 connector MT47H64M16 DDR2 SODIMM SPD JEDEC HTF8C32
Text: (lead-free) · Frequency/CL2 ­ 2.5ns @ CL = 5 ( DDR2-800 ) ­ 2.5ns @ CL = 6 ( DDR2-800 ) ­ 3.0ns @ CL = 5 , -80E - 800 -667 -53E -40E 1. Contact Micron for industrial temperature module offerings. 2. CL , Industry Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 800 800 533 400 - 800 PC2-6400 800 667 533 400 -667 PC2-5300 ­ 667 553 -53E , -80E_ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5 MT8HTF6464HTY-80E_ 512MB 64 Meg x


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PDF 256MB, 512MB, 200-Pin MT8HTF3264HDY 256MB MT8HTF6464HDY 512MB MT8HTF12864HDY MO-224 MT47H32M16 MT8HTF12864HDY-800 MT47H32M16 DATA SHEET MT8HTF12864HTY MT8HTF3264HDY-40E MT8HTF12864HDY-40E 200 pin SODIMM ddr2 connector MT47H64M16 DDR2 SODIMM SPD JEDEC HTF8C32
2004 - Not Available

Abstract: No abstract text available
Text: .19 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Release - Revised the IDD values - Revised the IDD values - Added DDR2-800 CL6 - Added the detailed , DDR2-800 5-5-5 K4T51043QE-ZC(L)E7 K4T51083QE-ZC(L)E7 K4T51163QE-ZC(L)E7 DDR2-800 6-6-6 K4T51043QE-ZC(L , tRCD(min) tRP(min) tRC(min) DDR2-800 5-5-5 5 12.5 12.5 57.5 DDR2-800 6-6-6 6 15 15 60 DDR2-667 5-5-5 5 , transfer rates of up to 800Mb/sec/pin ( DDR2-800 ) for general applications. The chip is designed to comply


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PDF K4T51043QE K4T51083QE K4T51163QE 512Mb 60FBGA 84FBGA
2009 - M83241

Abstract: M83261G-11 M83263G-11 M83263 M83241G-11 M83261 M83160G-11 M83262G M83261G m83241g
Text: -bit DDR2 memory controller, up to DDR2-800 - On-chip 128KB dual-access low-latency SRAM ·· Packet & QoS , QoS Congestion Control QoS Congestion Control 64-bit 200 MHz DDR2-800 Controller GbE , M83263G-11 Y Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) 2 Y Y M83261G-11 Y Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) M83262G-11 Y 2 2 16/32 bit DDR2-800 /667/533 2x(64K D$/64K I$) Y 2 2 16/32 bit DDR2-800 /667/533


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PDF 650MHz) M83xxx-BRF-001-G M83241 M83261G-11 M83263G-11 M83263 M83241G-11 M83261 M83160G-11 M83262G M83261G m83241g
2008 - DDR333

Abstract: 256Mx4
Text: 512MB (64M x8)*9 400/533/667/ 800 1 512MB (64M x8)*9 667/ 800 1 1GB (128M x4)*18 400/533/667/ 800 1 1GB (64M x8)*18 667/ 800 2 1GB (64M x8)*18 400/533/667/ 800 2 1GB (128M x8)*9 667/ 800 1 1GB (128Mx8)*9 400/533/667/ 800 1 2GB (128M x4)*36 667/ 800 2 2GB (128M x4)*36 400/533/667/ 800 2 2GB 128M x8)*18 667/ 800 2 2GB (256M x4)*18 400/533/667/ 800 1 4GB (256M x4)*36 667/ 800 2 2GB


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PDF DS-08-DRAM-002 DDR333 256Mx4
1998 - M378T6553CZ

Abstract: dm 533 K4T5116 udimm M378T2953CZ3 M378T6553CZ0 DQS9-17 M378T
Text: .19 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , 2005 - Revised the IDD Current Values. 1.3 January 2006 - Added DDR2-800 Current Values. 1.4 July 2006 - Added the bookmarks of datasheet format. 2006 - Added DDR2-800 CL6. - , (12th digit) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) F7 ( DDR2-800 ) E6 (DDR2-667) D5 (DDR2-533) CC (DDR2-400) Unit Speed@CL3 400 - 400


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PDF 240pin 512Mb 64/72-bit 60FBGA 84FBGA suppo50 K4T51083QC 32Mbx16 32Mx64 M378T3354CZ3/sM378T3354CZ0 M378T6553CZ dm 533 K4T5116 udimm M378T2953CZ3 M378T6553CZ0 DQS9-17 M378T
1998 - M378T2953EZ3

Abstract: samsung 512mb ddr
Text: .19 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Revised the IDD values - Added DDR2-800 CL=6 - Changed the Feature History DDR2 SDRAM 3 of 25 Rev , number(12th digit) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 533 800 5-5-5 F7 ( DDR2-800 ) 400 533 800 6-6-6 E6 , DDR2-400, DDR2-533 Min. VREF + 0.250 Max. VREF - 0.250 DDR2-667, DDR2-800 Min. VREF + 0.200 VREF -


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PDF 240pin 512Mb 64/72-bit 60FBGA 84FBGA K4T51083QE 32Mbx16 32Mx64 M378T3354EZ3 K4T51163QE M378T2953EZ3 samsung 512mb ddr
2003 - MT16HTF25664AY-800

Abstract: MT16HTF51264A PC2-3200 PC2-5300 PC2-6400 106 16K 736 MT16HTF51264AY-667
Text: 1.875ns @ CL = 7 (DDR2-1066)3 ­ 2.5ns @ CL = 5 ( DDR2-800 )4 ­ 2.5ns @ CL = 6 ( DDR2-800 )4 ­ 3.0ns @ CL = , - 800 -667 -53E -40E Notes: 1. End of life. 2. Contact Micron for industrial temperature module , RC (ns) -1GA -80E - 800 -667 -53E -40E PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 1066 ­ ­ ­ ­ ­ 800 ­ 800 ­ ­ ­ 667 800 667 667 ­ ­ ­ 533 533 , Clock Cycles (CL-tRCD-tRP) MT16HTF12864AY-80E_ MT16HTF12864AY- 800 _ MT16HTF12864AY


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PDF 512MB, 240-Pin MT16HTF6464A 512MB1 MT16HTF12864A MT16HTF25664A MT16HTF51264A 240-pin, PC2-3200, PC2-4200, MT16HTF25664AY-800 MT16HTF51264A PC2-3200 PC2-5300 PC2-6400 106 16K 736 MT16HTF51264AY-667
2002 - K4T2G084QA

Abstract: No abstract text available
Text: .14 14.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533 , ) stand for Dummy Pad PCB products. 2.0 Features · Performance range E7 ( DDR2-800 ) Speed@CL3 Speed@CL4 Speed@CL5 Speed@CL6 CL-tRCD-tRP 400 533 800 5-5-5 F7 ( DDR2-800 ) 533 667 800 6-6-6 E6 (DDR2 , -533 Min. VREF + 0.250 Max. VREF - 0.250 DDR2-667, DDR2-800 Min. VREF + 0.200 VREF - 0.200 Max. Units V V , for DDR2-800 /667/533 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) 14.1 Refresh


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PDF 240pin 64/72-bit 68FBGA 256Mbx8 512Mx64 T5263AZ K4T2G084QA K4T2G084QA
2010 - M393T2863FBA-C

Abstract: serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
Text: . 18 13. Electrical Characteristics & AC Timing for DDR2-800 /667 , products. 2. Key Features · Performance range E7 ( DDR2-800 ) CAS Latency tRCD(min) tRP(min) tRC(min) 5 12.5 12.5 57.5 F7 ( DDR2-800 ) 6 15 15 60 E6 (DDR2-667) 5 15 15 60 Unit tCK ns ns ns · JEDEC standard , (AC) VIL(AC) Parameter AC input logic high AC input logic low DDR2-667, DDR2-800 Min. VREF + 0.200 Max , . Electrical Characteristics & AC Timing for DDR2-800 /667 (0°C < TOPER < 95°C, VDDQ = 1.8V + 0.1V, VDD = 1.8V


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PDF M393T2863FBA M393T5663FBA M393T5660FBA M393T5160FBA 240pin M393T2863FBA-C serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
2007 - MT18HVF25672PDY

Abstract: marking BAX DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
Text: ­ 240-pin DIMM (lead-free) · Frequency/CL2 ­ 2.5ns @ CL = 5 ( DDR2-800 ) ­ 2.5ns @ CL = 6 ( DDR2-800 , : Marking P D T Y -80E - 800 -667 -53E -40E 1. Contact Micron for industrial temperature module , 4 CL = 3 (ns) tRP (ns) tRC (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 - 800 PC2-6400 800 667 533 400 15 15 55 -667 PC2 , Meg x 72 6.4 GB/s 2.5ns/ 800 MT/s 5-5-5 M18HVF12872PTY-80E_ 1GB 128 Meg x 72 6.4


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PDF 240-Pin MT18HVF12872PDY MT18HVF25672PDY 240-pin, PC2-3200, PC2-4200, PC2-5300, PC2-6400 18-compatible) MT18HVF25672PDY marking BAX DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
2005 - ky 202

Abstract: DDR2-533 DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
Text: Frequency/CAS latency2 ­ 2.5ns @ CL = 5 ( DDR2-800 ) ­ 2.5ns @ CL = 6 ( DDR2-800 ) ­ 3ns @ CL = 5 (DDR2 , None I Y -80E - 800 -667 -53E -40E Notes: 1. Contact Micron for industrial temperature module , 4 CL = 3 (ns) tRP (ns) tRC (ns) -80E - 800 -667 -53E -40E PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 ­ 800 ­ ­ ­ 800 667 667 ­ ­ 533 53E 533 533 400 ­ , DDR2 SDRAM Module Density Part Number2 MT9HVF6472(P)KY-80E_ MT9HVF6472(P)KY- 800 _ MT9HVF6472(P


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PDF 512MB, 244-Pin MT9HVF6472 512MB MT9HVF12872 244-pin, PC2-3200, PC2-4200, PC2-5300, PC2-6400 ky 202 DDR2-533 DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
2010 - Not Available

Abstract: No abstract text available
Text: SSTUB32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 , Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 4. Ordering information Table 1 , NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 5. Functional , . All rights reserved. 3 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 configurable , B.V. 2010. All rights reserved. 4 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800


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PDF SSTUB32866 25-bit 14-bit DDR2-800 SSTUB32866
2006 - K4T51083QC

Abstract: No abstract text available
Text: . 20 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667/533/400 , Odering Information - Revised the IDD Current Values - Added DDR2-800 IDD Current Values - Added DDR2-800 6-6-6 Speed bin - Added DDR2-800 6-6-6 IDD Current Values - Added the detailed explanation on the notes , October 2006 K4T51043QC K4T51083QC K4T51163QC 1.0 Ordering Information Org. 128Mx4 64Mx8 32Mx16 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 K4T51043QC-ZC(L)E6 K4T51083QC-ZC(L)E6 K4T51163QC-ZC(L)E6 512Mb


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PDF K4T51043QC K4T51083QC K4T51163QC 512Mb
2007 - Not Available

Abstract: No abstract text available
Text: SSTUM32868 1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM , 1.8 V DDR2-800 configurable registered buffer with parity Two additional chip select inputs allow , NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 5. Functional , Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity RESET CK CK Dn(1) VREF , SSTUM32868 NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 6. Pinning


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PDF SSTUM32868 28-bit DDR2-800 SSTUM32868 14-bit
2010 - DDR2-800

Abstract: Q11A SSTUB32866
Text: SSTUB32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 , checking functionality SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 configurable registered , B.V. 2010. All rights reserved. 2 of 30 SSTUB32866 NXP Semiconductors 1.8 V DDR2-800 , Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity RESET CK CK LPS0 (internal , NXP Semiconductors 1.8 V DDR2-800 configurable registered buffer with parity 6. Pinning


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PDF SSTUB32866 25-bit 14-bit DDR2-800 SSTUB32866 Q11A
2009 - MT47H128M8

Abstract: No abstract text available
Text: (halogen-free) · Frequency/CL2 ­ 1.875ns @ CL = 7 (DDR2-1066) ­ 2.5ns @ CL = 5 ( DDR2-800 ) ­ 2.5ns @ CL = 6 ( DDR2-800 ) ­ 3.0ns @ CL = 5 (DDR2-667) Notes: Options Marking None I Z -1GA -80E - 800 -667 1 , Grade -1GA -80E - 800 -667 -53E -40E Industry Nomenclature PC2-8500 PC2-6400 PC2-6400 PC2-5300 PC2-4200 PC2-3200 Data Rate (MT/s) CL = 7 1066 CL = 6 800 800 800 ­ ­ ­ CL = 5 667 800 667 667 ­ ­ CL = 4 533 , Configuration MT8HTF6464A(I)Z-80E_ MT8HTF6464A(I)Z- 800 _ MT8HTF6464A(I)Z-667_ 512MB 512MB 512MB 64 Meg x 64 64


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PDF 512MB, 240-Pin MT8HTF6464AZ 512MB MT8HTF12864AZ MT8HTF25664AZ 240-pin, PC2-3200, PC2-4200, PC2-5300, MT47H128M8
2004 - K4T51163QG

Abstract: M470T6554GZ3 JESD79-2E K4T51083QG M470T2953GZ3 M470T2953 K4T51163 K4T51163Q
Text: . 13 13.0 Electrical Characteristics & AC Timing for DDR2-800 /667 , E7 ( DDR2-800 ) F7 ( DDR2-800 ) E6 (DDR2-667) Units Speed@CL3 400 - 400 Mbps , Notes V 9.4 Input AC Logic Level DDR2-667, DDR2-800 Symbol Parameter VIH(AC) AC input , for DDR2-800 /667 (0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) 13.1 Refresh , tRAS for Corresponding Bin Speed DDR2-800 (E7) Bin(CL - tRCD - tRP) Parameter DDR2-800 (F7


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PDF 200pin 512Mb 64bit 60FBGA 84FBGA 64Mbx8 128Mx64 M470T2953GZ3 K4T51083QG K4T51163QG M470T6554GZ3 JESD79-2E K4T51083QG M470T2953GZ3 M470T2953 K4T51163 K4T51163Q
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