The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3082ETS8#PBF Linear Technology LT3082 - 200mA Single Resistor Low Dropout Linear Regulator; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LT3082MPST Linear Technology LT3082 - 200mA Single Resistor Low Dropout Linear Regulator; Package: SOT; Pins: 3; Temperature Range: -55°C to 125°C
LT3650EDD-8.2#PBF Linear Technology LT3650-8.X - High Voltage 2 Amp Monolithic 2-Cell Li-Ion Battery Charger; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LT3650EMSE-8.4#PBF Linear Technology LT3650-8.X - High Voltage 2 Amp Monolithic 2-Cell Li-Ion Battery Charger; Package: MSOP; Pins: 12; Temperature Range: -40°C to 85°C
LT3650IMSE-4.1#PBF Linear Technology LT3650-4.X - High Voltage 2 Amp Monolithic Li-Ion Battery Charger; Package: MSOP; Pins: 12; Temperature Range: -40°C to 85°C
LT3663EDCB#TRPBF Linear Technology LT3663 - 1.2A Step-Down Switching Regulator with Output Current Limit; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C

DATASHEET IC LM350 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 12v 3amp battery charger

Abstract: lm350 LM150GMD8 80500 TRANSISTOR
Text: Battery chargers Datasheet Title LM150/LM350A/ LM350 3-Amp Adjustable Regulators LM150 Mil-Aero , LM150/LM350A/ LM350 3-Amp Adjustable Regulators May 1998 LM150/LM350A/ LM350 3-Amp Adjustable , series offers full overload protection available only in IC 's. Included on the chip are current limit , -55°C TJ +150°C, while the LM350A is rated for -40°C TJ +125°C, and the LM350 is rated for 0°C TJ , Operating Temperature Range LM150 LM350A LM350 300°C 260°C TBD -55°C TJ +150°C -40°C TJ +125°C 0


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PDF LM150/LM350A/LM350 LM150 ////roarer/root/data13/imaging/BIT. 00804/08032000/NATL/08022000/LM150 LB-46: 28-Jun-96 2-Aug-2000] 12v 3amp battery charger lm350 LM150GMD8 80500 TRANSISTOR
1999 - LM350T

Abstract: LM350 12v -5v 3amp regulator 3Amp FIXED VOLTAGE REGULATORS LM350T P LM350T/3Amp FIXED VOLTAGE REGULATORS
Text: LM150/LM350A/ LM350 3-Amp Adjustable Regulators May 1998 LM150/LM350A/ LM350 3-Amp Adjustable , series offers full overload protection available only in IC 's. Included on the chip are current limit , -55°C TJ +150°C, while the LM350A is rated for -40°C TJ +125°C, and the LM350 is rated for 0°C TJ , Operating Temperature Range LM150 LM350A LM350 300°C 260°C TBD -55°C TJ +150°C -40°C TJ +125°C 0 , % %/W µA µA LM350A Typ Max Min 1.20 1.238 1.250 1.262 1.225 1.250 1.270 1.25 1.30 LM350 Typ Max V V


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PDF LM150/LM350A/LM350 LM150 LM350A) 5-Aug-2002] LM350T LM350 12v -5v 3amp regulator 3Amp FIXED VOLTAGE REGULATORS LM350T P LM350T/3Amp FIXED VOLTAGE REGULATORS
2001 - LM350T

Abstract: LM350
Text: datasheet of 1.2V to 33V back to top Features z z z z z z z LM350 Related Links Request samples How , www.fairchildsemi.com LM350 3-Terminal 3A Positive Adjustable Voltage Regulator Features · , current limit Output transistor safe-area compensation Description The LM350 is an adjustable 3 , Fairchild Semiconductor Corporation LM350 Absolute Maximum Ratings Parameter Input-Output Voltage , cycle is used. 2 LM350 Typical Perfomance Characteristics Figure 1. Load Regulation


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PDF LM350 LM350 O-220 LM350T
2000 - LM338 model SPICE

Abstract: LM338 spice model LM338 TO-3 spice model LM338 spice LM350 LM3420A-4 lm555 D04B charging control lm358 Li-ion charger controller sot23-5
Text: constant-current source. (The LM317 is rated for currents up to 1.5A, and the LM350 and LM338 can be used for , . switching regulator IC is used in a standard buck topology. For other currents, or other packages, other , Features Datasheet Package & Models Samples & Pricing Parametric Table Multiple Output Capability On , Cell Fault Protection Overvoltage Protection 12.60, 16.80, 8.20, 8.40 No Yes No No No No Datasheet


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PDF LM3420-4 LM3420 OT23-5 5-Aug-2002] LM338 model SPICE LM338 spice model LM338 TO-3 spice model LM338 spice LM350 LM3420A-4 lm555 D04B charging control lm358 Li-ion charger controller sot23-5
2001 - SM5814

Abstract: SM5545 sm5861 SM5152A1 D2824C d2816c SM5152A sm5860 SM5870 sm5806
Text: Datasheet Next Page NIPPON PRECISION CIRCUITS INC. Audio IC (2) Audio DSP Device SM5844A SM5849A , 16-pin VSOP Datasheet Application Note SM6451B Audio Variable Volume IC . Stereo inputs and , Amplifier for DVD-ROM/RAM 48-pin LQFP Datasheet SM9404A Read Channel IC for DVD RAM/ROM 100-pinLQFP Datasheet Driver Device SM8140A SM8141A/B Description EL Driver IC for PDA EL Driver IC for Portable , . SOT23-3 SOT89-3 Datasheet SM6780A Ni-MH/Ni-Cd Battery Charger IC First Charge Termination by


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PDF SM5841A/B SM5841C SM5841D SM5841H SM5842AP/APT SM5843AP1/AS1 SM5846A SM5847A 00002dB 00005dB SM5814 SM5545 sm5861 SM5152A1 D2824C d2816c SM5152A sm5860 SM5870 sm5806
2000 - bd682

Abstract: BD682S
Text: =25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC , : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = , - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A IC = - 2A, IB = - 40mA IC = - 1.5A, IB = - 30mA VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A , -2.4 IC = 250 IB -2.0 hFE, DC CURRENT GAIN -1.6 1000 -1.2 -0.8 -0.4 100 -0.1


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PDF BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 bd682 BD682S
2002 - KSP94

Abstract: No abstract text available
Text: Collector-Emitter Voltage VEBO Emitter-Base Voltage IC -6 V Collector Current -300 mA PC , Parameter Collector-Base Breakdown Voltage Test Condition IC = -100µA, IE=0 Min. -400 BVCES Collector-Emitter Breakdown Voltage IC = -100µA, VBE=0 -400 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC =0 -6 V ICBO Collector Cut-off Current VCB= -300V, VE=0 ICES , VCE= -10V, IC = -1mA VCE= -10V, IC = -10mA VCE= -10V, IC = -50mA VCE= -10V, IC = -100mA VCE (sat)1


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PDF KSP94 -400V KSP44 KSP94
2002 - KSP94

Abstract: KSP44 transistor KSP44 data
Text: VEBO Emitter-Base Voltage IC -6 V Collector Current -300 mA PC Collector , Collector-Base Breakdown Voltage Test Condition IC = -100µA, IE=0 Min. -400 -400 V -6 V BVCES Collector-Emitter Breakdown Voltage IC = -100µA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC , . VCE= -400V, VBE=0V IEBO Emitter Cut-off Current DC Current Gain VCE= -10V, IC = -1mA VCE= -10V, IC = -10mA VCE= -10V, IC = -50mA VCE= -10V, IC = -100mA VCE (sat)1 VCE (sat)2


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PDF KSP94 -400V KSP44 KSP94 KSP44 transistor KSP44 data
2002 - Not Available

Abstract: No abstract text available
Text: Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter , Output Capacitance Noise Figure Test Condition IC = -100, IE=0 IC = -10mA. IB=0 IE = -10. IC =0 VCB= -25V, IE=0 VEB= -3V, IC =0 VCE= -6V, IC = -1mA IC = -100mA, IB= -10mA VCE= -6V, IC = -1mA VCE= -6V, IC = -10mA VCB= -10V, IE = 0 f=1MHz VCE= -6V, IC = -0.3mA f=1MHz, Rs=10K -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 , -150µ A IB = -100µ A IB = -50µ A 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 1 -0.1 -1 -10 -100 IC [mA


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PDF FJX733 FJX945 OT-323
2001 - transistor H 802

Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
Text: Resistors · High DC Current Gain : hFE= 750 (Min.) @ IC = 1.5 and 2.0A DC · Complement to MJE700/701/702/703 , Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Current : MJE800/801 : MJE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min. 60 80 , = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 2.5


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PDF MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 E800STU transistor H 802 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
2001 - obsolete ic cross reference

Abstract: audio ic Cross Reference
Text: Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG , : KSE172 Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 Test Condition IC , , IE = 0, TC = 150°C VCB = - 80V, IE = 0, TC = 150°C VCB = - 100V, IE = 0, TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = -


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PDF KSE170/171/172 O-126 KSE170 KSE171 KSE172 KSE172STU obsolete ic cross reference audio ic Cross Reference
2001 - Transistor B C 458

Abstract: No abstract text available
Text: Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Condition IC = -100µA, IE=0 IC = -1mA, IB=0 IE= -10µA, IC =0 VCB= -200V, IE=0 VEB= -4V, IC =0 VCE= -10V, IC = -1mA VCE= -10V, IC = -10mA VCE= -10V, IC = -30mA VCE= -10V, IC = -50mA VCE= -10V, IC = -100mA IC = -10mA, IB= -1mA IC = -20mA, IB= -2mA IC = -30mA, IB= -3mA IC = -50mA, IB= -5mA IC = -10mA, IB= -1mA IC = -20mA, IB= -2mA IC = -30mA, IB= -3mA VCE= -10V, IC = -100mA VCE= -20V, IC = -10mA, f=20MHz VCB= -20V, IE=0, f


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PDF 2N6519 -300V 625mW 2N6516 2N6520 Transistor B C 458
2001 - mje172 analog

Abstract: No abstract text available
Text: Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG , : MJE172 Collector Cut-off Current : MJE170 : MJE171 : MJE172 : MJE170 : MJE171 : MJE172 Test Condition IC , , IE = 0, @TC = 150°C VCB = - 80V, IE = 0, @TC = 150°C VCB = - 100V, IE = 0, @TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = -


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PDF MJE170/171/172 O-126 MJE170 MJE171 MJE172 MJE172STU mje172 analog
2001 - MJE180STU

Abstract: MJE180
Text: =25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC PC TJ TSTG Electrical Characteristics TC , Current DC Current Gain Test Condition IC = 10mA, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 , 150°C VBE = 7V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA VCE = 1V, IC = 500mA VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 0.1MHz 50 IEBO hFE VCE(sat


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PDF MJE180/181/182 O-126 MJE180 MJE181 MJE182 MJE182 MJE182STU MJE180STU MJE180
2000 - obsolete ic cross reference

Abstract: No abstract text available
Text: 5 6 8 0.2 50 150 - 65 ~ 150 V V V V V V V V V A A A W °C °C Value Units VEBO IC ICP IB PC TJ TSTG , Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC = 2A VCE = 3V, IC = 6A IC = 2A, IB = 8mA IC = 6A, IB = 60mA IC = 2A, IB = 8mA VCE = 3V, IC = 1A VCE = 3V, IC = 6A IF = 2A 1000 750 100 500 500 500 500 2 20000 2 3 2.5 2.5 3 1.8 V V , 200 200 200 µA µA µA µA Test Condition IC = 100mA, IB = 0 Min. 45 60 80 100 Typ. Max. Unit s V V V V


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PDF BDW23/A/B/C BDW24, BDW24A, BDW24B BDW24C O-220 BDW23 BDW23A BDW23B obsolete ic cross reference
2001 - transistor c 458

Abstract: 2n6518
Text: Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Condition IC = -100µA, IE=0 IC = -1mA, IB=0 IE= -10µA, IC =0 VCB= -150V, IE=0 VEB= -4V, IC =0 VCE= -10V, IC = -1mA VCE= -10V, IC = -10mA VCE= -10V, IC = -30mA VCE= -10V, IC = -50mA VCE= -10V, IC = -100mA IC = -10mA, IB= -1mA IC = -20mA, IB= -2mA IC = -30mA, IB= -3mA IC = -50mA, IB= -5mA IC = -10mA, IB= -1mA IC = -20mA, IB= -2mA IC = -30mA, IB= -3mA VCE= -10V, IC = -100mA VCE= -20V, IC = -10mA, f=20MHz VCB= -20V, IE=0, f


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PDF 2N6518 -250V 625mW 2N6515 2N6520 transistor c 458 2n6518
2001 - Not Available

Abstract: No abstract text available
Text: Units V V V V V V V A A A W °C °C VCEO VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC , : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 1.5 20 15 40 40 25 15 130 130 140 140 Min. 60 80 100 100 100 100 1 Typ


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PDF BD439/441 BD440, BD442 O-126 BD439 BD441
2001 - Not Available

Abstract: No abstract text available
Text: Collector-Emitter Voltage : KSP8598 : KSP8599 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector , Test Condition IC = -100µA, IE=0 Min. -60 -80 IC = -10mA, IB=0 -60 -80 IE= -10µA, IC =0 VCB= -60V, IE=0 VCB= -80V, IE=0 VCE= -60V, IB=0 VEB= -4V, IC =0 VCE= -5V, IC = -1mA VCE= -5V, IC = -10mA VCE= -5V, IC = -100mA IC = -100mA, IB= -5mA IC = -100mA, IB= -10mA VCE= -5V, IC = -1mA VCE= -5V, IC = -10mA VCE= -5V, IC , Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 IC = 10 IB VCE =


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PDF KSP8598/8599 KSP8598: KSP8599: 625mW KSP8598 KSP8599 KSP8599TF
2001 - BUT11AF

Abstract: an7511 BUT11AFTU
Text: 40 150 - 65 ~ 150 Units V V V V V A A A A W °C °C VEBO IC ICP IB IBP PC TJ TSTG Electrical , Time Storage Time Fall Time VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100 1 1 10 1.5 1.5 1.3 1.3 1 4 0.8 mA mA mA V V V V µs µs µs Test Condition IC = 100mA, IB = , VOLTAGE VCE = 5V IC = 5 IB hFE, DC CURRENT GAIN 1 10 0.1 VCE(sat) 1 0.01 0.01


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PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AFTU O-220F an7511
2001 - TRANSISTOR 237b

Abstract: BC239 NPN transistor BC237 BC238 NPN transistor BC239CTA cross reference bc237 transistor bc 238 b transistor BC 458
Text: IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage , : BC237/238 : BC239 : BC239 Test Condition IC =2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 , . Max. Units V V V V nA nA BVEBO IE=1µA, IC =0 ICES VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=5V, IC =2mA IC =10mA, IB=0.5mA IC =100mA, IB=5mA IC =10mA, IB=0.5mA IC =100mA, IB=5mA VCE=5V, IC =2mA VCE=3V, IC =0.5mA, f=100MHz VCE=5V, IC =10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC =0, f=1MHz VCE=5V, IC =0.2mA, f


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PDF BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC237 BC238 NPN transistor BC239CTA cross reference bc237 transistor bc 238 b transistor BC 458
2001 - transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev , /238 : BC239 : BC239 VCE= -5V, IC = -0.2mA, RG=2K, f=1KHz VCE= -5V, IC = -0.2mA RG=2K, f=30~15KHz 10 4 4 dB dB dB Test Condition IC = -2mA, IB=0 Min. -45 -25 IC = -10µA, VBE=0 -50 -30 IE= -10µA, IC =0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -5V, IC = -2mA IC = -10mA, IB= -0.5mA IC = -100mA, IB= -5mA IC = -10mA, IB= -0.5mA IC = -100mA, IB= -5mA VCE= -5V, IC = -2mA VCE= -5V, IC = -10mA, f=50MHz VCB= -10V, IE=0, f


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
2000 - obsolete ic cross reference

Abstract: transistor crossreference crossreference transistor
Text: Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise , * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 45 60 , = 0 VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 3A, IB = 12mA IF= 3A IF= 8A ICEO IEBO hFE VCE(sat) VBE(sat , ], SATURATION VOLTAGE VCE = 3V 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 IC = 250IB hFE, DC


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PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B obsolete ic cross reference transistor crossreference crossreference transistor
2000 - tip42

Abstract: TIP42BTU transistor tip41 tip42c
Text: Storage Temperature VEBO IC ICP IB PC PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise , , VEB = 0 VCE = -60V, VEB = 0 VCE = -80V, VEB = 0 VCE = -100V, VEB = 0 VEB = -5V, IC = 0 VCE = -4V, IC = -0.3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE = -4V, IC = -6A VCE = -10V, IC = -500mA 3.0 30 15 -400 -400 -400 -400 -1 75 -1.5 -2.0 V V MHz Rev. A, February 2000 Test Condition IC = -30mA, IB = 0 , ], SATURATION VOLTAGE 1000 -2.0 VCE = -4V IC /IB = 10 -1.6 hFE, DC CURRENT GAIN VBE(sat


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PDF TIP42 TIP42/42A/42B/42C) TIP41/41A/41B/41C O-220 TIP42 TIP42A TIP42B TIP42C TIP42BTU transistor tip41
2001 - Not Available

Abstract: No abstract text available
Text: Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter , Breakdown Voltage Base Cut-off Current Collector Cut-off Current * DC Current Gain Test Condition IC =100µA, IE=0 IC =1.0mA, IB=0 IE=100µA, IC =0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V VCE=1V, IC =0.1mA VCE=1V, IC =1mA VCE=1V, IC =10mA VCE=1V, IC =150mA VCE=2V, IC =500mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA IC =20mA, VCE=10V f=100MHz VCB=5V, IE=0, f=100KHz VCC=30V, VBE=2V IC =150mA, IB1


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PDF KST4401 OT-23 I01MTF
2001 - Not Available

Abstract: No abstract text available
Text: =25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC , Current DC Current Gain Test Condition IC = 10mA, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 , 150°C VBE = 7V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA VCE = 1V, IC = 500mA VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 0.1MHz 50 IEBO hFE VCE(sat


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PDF KSE180/181/182 O-126 KSE180 KSE181 KSE182 KSE182 KSE182STU
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