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LT3748EMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3748EMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3748HMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C
LT3748IMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3748HMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C
LT3748IMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C

DARLINGTON 30A 100V npn Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: ) 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package. The PMD18D100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is , Dissipation at Tcase= 50°C Operating Junction and Storage Temperature Thermal Resistance 100V 100V 5V , 30A IB = 120mA &/u Units 2 V VCE = 3V 2.8 V IC = 30A IB = 120mA 2.8


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PDF PMD18D100 100APEAK PMD18D100 100mA 300us,
IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
Text: , AMP, 160V, 0.5A, SOT-23, T&R TR, PNP, HI-VOLT, 300V, 0.5A, SOT-23, T&R TR, NPN , DARLINGTON , 100V , 2A, D-PAK, T&R TR, NPN , DARLINGTON , 100V , 2A, l-PAK TR, PNP, DARLINGTON , 100V , 2A, D-PAK, T&R TR, PNP, DARLINGTON , 100V , 2A, l-PAK TR, NPN , DARLINGTON , 100V , 8A, D-PAK, T&R TR, NPN , DARLINGTON , 100V , 8A, l-PAK TR, PNP, DARLINGTON , 100V , 8A, D-PAK, T&R TR, PNP, DARLINGTON , 100V , 8A, l-PAK TR, PNP, GP, 60V, 10A , TR, NPN , GP, 100V , 1A, D-PAK, T&R TR, NPN , GP, 100V , 1A, l-PAK TR, PNP, GP, 100V , 1A, D-PAK, T&R TR


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PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , -30V; BVEB0-30. Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc- 3.0A , L35 Pc-lOW max; BVCBO-30V; lc- 3.0A max;hFE-15000/VCE-5.0V; Ic1.OA. Pd 25W;VCEV 80V;lc 7A max;hFE 1.0k


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a DM01B 20C26 SAC42 L29a
UD1001

Abstract: FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , 34 35 36 RM5008D RM8007D DD12J 400m 400m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 1 .On 100p , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 MA3232 transistor A431 CA3036 DM01B UC850 L0NA UC340 DM02B
2004 - tip122 transistor

Abstract: TIP120 darlington tip 122 TIP127 TIP 422 transistor transistor TIP 662 TRANSISTOR tip122 features TRANSISTOR tip122 TIP125 transistor tip120
Text: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: · Designed for general-purpose , (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V (Minimum) - TIP122, TIP127. · Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC = 3.0A . · Monolithic construction with , 5.0 Ampere Darlington Complementary Silicon Power Transistors 60 - 100 Volts 65 Watts 3.66 G NPN TIP120 TIP121 TIP122 3.70 3.90 TO-220 Dimensions : Millimetres Maximum


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PDF TIP120, TIP125 TIP121, TIP126 TIP122, TIP127. tip122 transistor TIP120 darlington tip 122 TIP127 TIP 422 transistor transistor TIP 662 TRANSISTOR tip122 features TRANSISTOR tip122 TIP125 transistor tip120
A1381 transistor

Abstract: 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , (Also see top of reverse side of card.) Ill 11. SILICON NPN ■HIGH POWER TRANSISTORS IN ORDER OF (1 , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
Text: -40V;IC- 3.0A . 2N1613 in isolated T018 Package; BVCB0-75V. 2N1889 in isolated T05 Packaae; BVC80- 100V . 52 , ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , 10mt 2.4T 2.4t 2.5 2.4* 2.4* 20 20 20 20 20 30A 20m 20m 300uA 10d 1.00 1.00 0.0 3.2 3.2 20 1.6mA


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
transistor A431

Abstract: CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , . SILICON NPN ■LOW POWER TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION 3J 111 MAX. 21 IDERATE , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , -30V; BVEB0-30. Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc- 3.0A


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 CA3036 A431 transistor a106 transistor PET3001 GME3001 d16P4 AT344 MA3232 A431
transistor a640

Abstract: transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , . SILICON NPN - LOW POWER TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION il JJMAX. 2 1 1 DERATE T , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , -30V; BVEB0-30. Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc- 3.0A


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
ST25C transistor

Abstract: TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , . SILICON NPN ■LOW POWER TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION LINE No. ¿J r TYPE No , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , -30V; BVEB0-30. Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc- 3.0A


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 ST25C transistor TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
2004 - BDX33

Abstract: BDX33B BDX33C BDX34B BDX34C resistor farnell DARLINGTON 30A 100V npn
Text: BDX33, 34 Darlington Transistors Features: · Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in , L 0.33 0.55 M 2.48 2.98 O 3.70 PNP BDX34B BDX34C 1.36 H NPN , .0 BDX33, 34 Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDX33B BDX33C , , 34 Darlington Transistors ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted


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PDF BDX33, BDX33B, BDX34B BDX33C, BDX34C BDX33B BDX33C BDX33 BDX33B BDX33C BDX34B BDX34C resistor farnell DARLINGTON 30A 100V npn
2001 - Not Available

Abstract: No abstract text available
Text: Emitter forward voltage Fall time IE=8A IC= 3.0A ; IB1=-IB2=0.3A; VCC=30V Tmb<=25 C IC=8A; IB=0.08A o CONDITION VBE =0V MIN 100100 8.016 75- MAX UNIT V V A A W NPN Silicon Power Darlington , 2.92 1.39 6.86 1.27 - NOTE GENERAL DESCRIPTION Silicon NPN medium power Darlington , =1MHz Collector capacitance at f=1MHz On times Turn-off storage time Fall time CONDITION MIN V CB= 100V V EB =5V IC=100mA 100 IC= 3.0A ,IB=12mA IC=8A,IB=80mA IC=3A,VCE=4V 1000 IC=8A,VCE=4V 100 IC=0.5A,VCE=4V V CB=10V IC=3A,IB


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PDF 2N6045 O-220
2004 - BDW93C PNP

Abstract: BDW94B BDW93B BDW93 DARLINGTON 30A 100V npn bdw93c applications BDW94C BDW94 BDW93C Complementary Darlington current Amplifier
Text: /06 V1.0 BDW93, BDW94 Series Darlington Transistors BDW93 Series NPN BDW94 Series PNP NPN , 08/05/06 V1.0 BDW93, BDW94 Series Darlington Transistors NPN BDW93B and C/PNP BDW94B and C , Saturation Region Page 4 08/05/06 V1.0 BDW93, BDW94 Series Darlington Transistors NPN BDW93B and , BDW93, BDW94 Series Darlington Transistors Features: Designed for general-purpose amplifier and , BDW93B, BDW94B 100V (Minimum) - BDW93C, BDW94C · Collector-emitter saturation voltage-VCE (sat) = 2.0V


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PDF BDW93, BDW94 BDW93B, BDW94B BDW93C, BDW94C BDW93C PNP BDW94B BDW93B BDW93 DARLINGTON 30A 100V npn bdw93c applications BDW94C BDW93C Complementary Darlington current Amplifier
IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
Text: RESISTOR, SOT-23. T&R MJD112-T1 TR, NPN , DARLINGTON , 100V , 2A, D-PAK, T&R MJD112-1 TR, NPN , DARLINGTON , 100V , 2A, l-PAK MJD117-T1 TR, PNP, DARLINGTON , 100V , 2A, D-PAK, T&R MJD117-1 TR, PNP, DARLINGTON , 100V , 2A, l-PAK MJD122-T1 TR, NPN , DARLINGTON , 100V , 8A, D-PAK, T&R MJD122-1 TR, NPN , DARLINGTON , 100V , 8A, l-PAK MJD127-T1 TR, PNP, DARLINGTON , 100V , 8A, D-PAK, T&R MJD127-1 TR, PNP, DARLINGTON , 100V . 8A, l-PAK , , D-PAK, T&R MJD3055-T1 TR, NPN , GP. 60V, 10A, l-PAK MJD3055-1 TR, NPN , GP, 100V , 1A, D-PAK, T&R MJD29C-T1


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PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
2004 - BDW94

Abstract: BDW93C BDW93 BDW93B BDW94B BDW94C BDW93C PNP
Text: BDW94 Series PNP Page 3 31/05/05 V1.0 BDW93, BDW94 Darlington Transistors NPN BDW93B and C , Darlington Transistors NPN BDW93B and C PNP BDW94B and C DC Current Gain DC Current Gain , NPN BDW93C BDW94B PNP BDW94C Page 6 31/05/05 V1.0 BDW93, BDW94 Darlington Transistors , BDW93, BDW94 Darlington Transistors Features: · Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDW93B, BDW94B = 100V (Minimum) - BDW93C, BDW94C · Collector-Emitter saturation


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PDF BDW93, BDW94 BDW93B, BDW94B BDW93C, BDW94C BDW93B BDW93C BDW94 BDW93C BDW93 BDW93B BDW94B BDW94C BDW93C PNP
NS1000 n

Abstract: CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , /hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc- 3.0A max;hFE-18000 min/VCE , -30V; lc- 3.0A max;hFE-15000/VCE-5.0V; Ic1.OA. Pd 25W;VCEV 80V;lc 7A max;hFE 1.0k min at Ic 5A;Ton 350ns max


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V transistor A431 2CY38 QD403-78 QD402-78 QD400-78 NS1862 UD1001
DIODE SJ 98

Abstract: DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
Text: ;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEB0-15V min;IC- 3.0A max. Pt , -15V min;IC- 3.0A max. Pt-2.0W max;BVCBO- 100V min;BVCEO-80V min;BVEB0-15V min;IC- 3.0A max. Pt-2.0W max;BVCB0 , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , -10W max; BVCBO-30V; lc- 3.0A max;hFE-18000 min/VCE-5.0V;lc 1 .OA. 28 29 30 2N676 2N3230 2N3231 11 11 11 P NA NA Ge- Si Si Si L35 L35 Pc-lOW max; BVCBO-30V; lc- 3.0A max;hFE-15000/VCE-5.0V; Ic1.OA. Pd 25W


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 DARLINGTON 3A 100V npn array CA3036 silicon epitaxial mesa diode microwave switch V405T OC7420 MT995 MT869 MT726 A431
Not Available

Abstract: No abstract text available
Text: ordering information) Epoxy meets UL 94 V-0 flammability rating NPN Silicon Power Darlington , NE DE E RAL SCRIPTIO N Halogen free available upon request by adding suffix "-HF" Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed switching and , =0.08A Icsat Collector saturation current o 4.0 V S Q T A U IC= 3.0A ; IB1=-IB2 , capacitance at f=1MHz On times tS Turn-off storage time tF Fall time CONDITION MIN V CB= 100V


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PDF 2N6045
2001 - Not Available

Abstract: No abstract text available
Text:  !"# 2N6045 Halogen free available upon request by adding suffix "-HF" Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed switching and general purpose. NPN Silicon Power Darlington Transistor Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix , saturation current o 4.0 V IE=8A IC= 3.0A ; IB1=-IB2=0.3A; VCC=30V us S Q T A U 1 2 , tS Turn-off storage time tF Fall time CONDITION MIN V CB= 100V V EB =5V IC=100mA 100


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PDF 2N6045
2001 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6045 NPN Silicon Power Darlington Transistor · · · · GENERAL DESCRIPTION Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed switching and , Turn-off storage time Fall time CONDITION MIN V CB= 100V V EB =5V IC=100mA 100 IC= 3.0A ,IB=12mA IC=8A,IB , voltage Fall time IE=8A IC= 3.0A ; IB1=-IB2=0.3A; VCC=30V Tmb<=25 C IC=8A; IB=0.08A o CONDITION VBE =0V


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PDF 2N6045
2001 - Not Available

Abstract: No abstract text available
Text: !"# 2N6045 NPN Silicon Power Darlington Transistor · · · · · GENERAL DESCRIPTION Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed , Collector saturation current Emitter forward voltage Fall time IE=8A IC= 3.0A ; IB1=-IB2=0.3A; VCC=30V Tmb<=25 , at f=1MHz Collector capacitance at f=1MHz On times Turn-off storage time Fall time CONDITION MIN V CB= 100V V EB =5V IC=100mA 100 IC= 3.0A ,IB=12mA IC=8A,IB=80mA IC=3A,VCE=4V 1000 IC=8A,VCE=4V 100 IC=0.5A,VCE


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PDF 2N6045
MA3232

Abstract: FT4017 CA3036 BF123 BVEBO-15V BF121 DIODE SJ 98 DM01B A431 GW 9n
Text: -40V;IC- 3.0A . 2N1613 in isolated T018 Package; BVCBO-75V. 2N1889 in isolated T05 Packaae: BVC80- 100V . PC , max. Pt-2.0W max;BVCBO- 100V min;BVCE0-80V min;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max:BVCBO-60V min , max. Pt-2.0W max;BVCB0- 100V min;BVCEO-80V min;BVEBO-15V min;IC- 3.0A max. Pt-2.0W max:BVCBO-60V min , BV , , _ _ Indicates BV , E cbo. 5. SILICON NPN LOW POWER TRANSISTORS 3J LINE No , -30V; lc- 3.0A max;hFE-18000 min/VCE-5.0V:lc 1.OA. Pc-10W max; BVCB0-30V; lc- 3.0A max;hFE-15000/VCE


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PDF BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 FT4017 CA3036 BF123 BF121 DIODE SJ 98 DM01B A431 GW 9n
RC 60 alternator

Abstract: No abstract text available
Text: PROTECTION 100V DUMP PROTECTION 300V LOW ENERGY SPIKE PROTECTION THERM AL PROTECTION DIP-16 D E S C R IP T IO N The L585 is an integrated circuit designed for use with an external NPN darlington as , . During transients the darlington is kept off and can withstand peak voltages of 100V . Addi­ tionally , = 20°C , 100m s A fter Ignition R i = 1.3KÎ2 (1) Tj = - 30 °C Tj = + 100°C S T C „S , O ve rch a rg in g V oltage Th re sho ld (2) T j = 25°C R i = 1.3KÎ2 V s = V ah (3) - 30Â


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PDF DIP-16 5-10ms) DP7637/1. 500ns, P6KE100P RC 60 alternator
1994 - 4pin opto isolator 610-2

Abstract: 307-064 308-613 4pin opto isolator 4-pin optoisolator 307064 BZX61 SFH610-2 ISO74 dual channel opto triac
Text: Issued November 1994 F18512 Transistor/ Darlington opto-isolators A comprehensive range of , 111-122 l A single darlington output opto-isolator MCT2201 111-138 l Two high voltage darlington output , H11D1 111-150 l A quad transistor output opto-isolator. Darlington output single opto-isolators , SFH 610-2 which is High voltage darlington output single opto-isolators housed in a 4-pin d.i.l , arsenide infra- 5300 Vac rms - 5 seconds red emitting diode coupled with an NPN phototransistor. 7500 Vac


Original
PDF F18512 SFH610-2 CNY17-1 CNY17-3 H11A1 MCT2201 20kHz. IN4004 240Vac 4pin opto isolator 610-2 307-064 308-613 4pin opto isolator 4-pin optoisolator 307064 BZX61 ISO74 dual channel opto triac
Y220b

Abstract: 2N3836 BD264 BD263 BD265 UD3008 BD264A NS9726 2N5417 2N3837
Text: -20 min;ft-100MHz. 55# 56 57 TAD93 TU 55 UD3008 11 11 11 NPN N-D P s R T05 L3d Darlington Compound Amp , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , ;BVCB0-80V min;BVCEO-60V min;BVEB0-15V min;IC-3A max. Pt-1 2.5W max;BVCB0- 100V min;BVCE0-80V min;BVEB0 , MHM2212 11 11 11 N-PL N-PL N-PL s S s MT53 MT53 MT53 GH GH GH Pt-12.5W at 100°C;BVCBO-120V;IC- 3.0A ;hFE , -12.5Wmax;BVCBO- 100V ;BVCEO-80Vmin;BVEBO-15Vmin. Pt-12.5Wmax;BVCBO-60V;BVCEO-40Vmin;BVEBO-15Vmin. Pt-12.5Wmax;BVCB0


OCR Scan
PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 UD3008 BD264A NS9726 2N5417 2N3837
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