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D44D1-2 datasheet (1)

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D45D1

Abstract: D44D1 D44D6 D44D5 D44D4 D44D3 D44D2 npn DARLINGTON 10A high current darlington transistor NPN POWER DARLINGTON TRANSISTORS
Text: DESCRIPTION ·High DC Current Gain-hFE= 2000(Min)@ IC= 1A ·Complement to Type D45D1/ 2 /3/4/5/6 APPLICATIONS , / 2 /3/4/5/6 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistors D44D1/ 2 /3/4/5/6 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified , VCE(sat)- 2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on , isc Websitewww.iscsemi.cn B 2 2000 INCHANGE Semiconductor


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PDF D45D1/2/3/4/5/6 D44D1 D44D2 D44D4 D44D6 D44D3 D44D5 D45D1 D44D1 D44D6 D44D5 D44D4 D44D3 D44D2 npn DARLINGTON 10A high current darlington transistor NPN POWER DARLINGTON TRANSISTORS
C 2371

Abstract: 044D
Text: - 3 5 - 2 -9 6-Ampere N-P-N Darlington Power Transistors Complementary to the D45D Series 40 , 2000. 9 2 C S -43150 Schematic diagram for all typos. MAXIMUM RATINGS (TA = 25° C) (unless , °C Operating and Storage Junction Temperature Range SYMBOL VCEO VcES Vebo c b Pd Tj, TstG D44D1. 2 D44D3 , specified) | CHARACTERISTIC SYMBOL MIN TYP I" - MAX 3 5 - 2 9 UNIT OFF , Load Delay Time + Rise Time Storage Time Fall Time (1) Pulse Test: PW< 300ms Duty Cycle < 2 % . le = 3A


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PDF M3D5271 O-220AB D44D-serles C 2371 044D
D44D1

Abstract: D44D2 D44D3 D44D5 D45D D44D
Text: -220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 404110.26) .380(9.651 • .145(3.68) A .14113.58) TERM.1-TERM. 2 , TERM 1 TERM. 2 TERM. 3 TA8 T0-220-AB BASE COLLECTOR EMITTER COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING SYMBOL D44D1. 2 D44D3,4 D44D5.6 UNITS Collector-Emitter Voltage VCEO , MIN TYP MAX UNIT off characteristics*1' Collector-Emitter Breakdown Voltage D44D1. 2 le = 50mA , SEE FIGURE 5 on characteristics DC Current Gain (lC = 1A, VCE = 2V) hFE 2 ,000 5,000 — â


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PDF T0-220AB D44D1 D44D2 D44D3 D44D5 D45D D44D
C 2371

Abstract: D44D1
Text: devices feature m inimum gains o f 2000. c _ TERMINAL DESIGNATIONS (F LA N G E ) 9 2 C S -3 9 9 6 , Tc = 25° C Operating and Storage Junction Temperature Range SYMBOL VcEO VCES V ebo ic % Pd D44D1. 2 40 , (T ^ = 2 5 °C) (unless otherwise specified) [ CHARACTERISTIC SYMBOL MIN TYP MAX UNIT OFF , < 2 %. le = 3A, I b i = FE VcE(sat) D44D2,4,6 only VßE(sat) - 2 ,000 5,000 - - 1.5 1.5 2.5 - V V Volts FBSOA


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PDF D44D-series O-220AB 300ms D44D2 D44D1 D44D3 D44D5 C 2371
D40C7

Abstract: TO-204AA* 2n6650 D41K D45D1 2n6648 complementary darlington
Text: to D41K Family D40K1 2 30 1000 min. 1.5 5 10 D40K3 2 30 1000 min. 1 5 10 TO-202 D40K2 2 50 1000 min. 1.5 5 10 D40K4 2 50 1000 min. 1 5 10 D41K FAMILY (p-n-p) Complementary to D40K Family D41K1 - 2 -30 1000 min. -1.5 -5 10 D41K3 - 2 -30 1000 min. -1 -5 10 TO-202 D41K2 - 2 -50 1000 min. -1.5 -5 10 D41K4 - 2 -50 1000 min. -1 -5 10 D44D FAMILY (n-p-n) Complementary to D45D Family D44D1, 2 6 40 2000 min. 1 2 30 D44D3, 4 6 60 2000 min. 1 2 30 TO-220AB D44D5, 6 6 80 2000 min. 1 2 30


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PDF T0abfl73 2N6650 2N6358 2N6648 2N6649 O-204AA/ 2N6650 2N6668 2N6388 2N6666 D40C7 TO-204AA* 2n6650 D41K D45D1 2n6648 complementary darlington
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: 2N5085 2N5148 2N5150 2N5152 2N5153 2N5154 2 / 47 SGS-THOMSON replacement SGS-THOMSON , BD361 BD361A BD362 BD362A BD375 BD376 BD377 BD378 BD379 BD380 BD385 BD385- 2 BD385-5 BD385 , Industry standard BD386- 2 BD386-5 BD386-8 BD387 BD387-1 BD387- 2 BD387-5 BD387-8 BD388 BD388-1 BD388- 2 BD388-5 BD388-8 BD410 BD411 BD412 BD414 BD415 BD416 BD417 BD418 BD429 BD430 BD433


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: 2 /35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 , TIP41A BU508A BUX80 MJE13009 TIP41B MJE13009 BUL381 / 2 MJE13009 TIP31C INDUSTY STANDARD , BD361A BD362 BD362A BD375 BD376 BD377 BD378 BD379 BD380 BD385 BD385- 2 BD385-5 BD385-8 BD386 BD386-1 BD386- 2 BD386-5 BD386-8 BD387 BD387-1 BD387- 2 BD387-5 BD387-8 BD388 BD388-1 BD388- 2 , BUR50S BUR51 BUR52 BUL381 / 2 BUX80 BUY69A BUX48 BUX48A BUX98A BUL381 / 2 BUX48 BUX48A BUX48


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
B0411

Abstract: B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: BD375 BD376 BD377 BD378 BD379 BD380 BD385 BD385- 2 BD385-5 BD385-8 BD386 BD386-1 BD386- 2 BD386-5 BD336 , BD387-1 BD387- 2 BD387-5 BD387-8 BD388 BD388-1 BD388- 2 BD388-5 BD388-8 BD410 B0411 BD412 BD414 BD415


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
BUZ901P

Abstract: BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
Text: : BUZ40 Notes: Breakdown Voltage: 500 Continuous Current: 2 RDS(on) Ohm: 4.5 Trans Conductance , : Industry Type: BUZ50 STI Type: BUZ50B Notes: Breakdown Voltage: 1000 Continuous Current: 2 RDS(on) Ohm , Voltage: 500 Continuous Current: 2 RDS(on) Ohm: 4.0 Trans Conductance Mhos: 1.9 Trans Conductance A


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PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BD380 BD385 BD385- 2 BD385-5 BD385-8 BD386 BD386-1 BD386- 2 BD386-5 BD386-8 BD387 BD387-1 BD387- 2 BD387-5 BD387-8 BD388 BD388-1 BD388- 2 BD388-5 BD388-8 BD410 BD411 BD411-1 BD411- 2 BD411-5 BD412 BD412-1 BD412-8 BD413-1 BD413- 2 BD413-5 BD414 BD414-1 BD414- 2 BD414-5 BD414-8 BD415 BD415-1 BD415- 2 BD415-8 BD416 BD416-1 BD416- 2 BD416-5 BD417 BD417-1 BD238 BD379 , PREFERRED INDUSTRY STANDARD , , BD417- 2 BD417-5 BD417-8 BD418 BD418-1 BD418- 2 BD418


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
2001 - D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 BDW93C equivalent MJ10009 BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
Text: value. REV 2 Motorola Bipolar Power Transistor Device Data 3­451 , Collector Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 2 A, Vclamp = Rated VCEX, TC = 100_C, VBE , Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Emitter Cutoff Current (VEB = 2 Vdc, IC = 0) 500 , Second Breakdown Collector Current with base forward biased IS/b See Figure 11 ON CHARACTERISTICS ( 2 ) DC , - - - - 3 400 300 2 3.5 2.5 Collector­Emitter Saturation Voltage (IC = 10 Adc, IB = 500 mAdc) (IC


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PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 BDW93C equivalent BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
2001 - transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ*15033 BU100 BU326 transistor t4 3570 ST T4 3580
Text: High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc , surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2 , CHARACTERISTICS DC Current Gain (1) (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 , ) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Vdc - - - - - 0.3 0.75 1.8 2.5 1.6 Base­Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc) Base­Emitter On Voltage (1) (IC = 2 Adc, VCE = 1


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PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ*15033 BU100 BU326 transistor t4 3570 ST T4 3580
2001 - BD127

Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 BD388 transistor bd4202 BU108 motorola AN485 2SC122 MJE340 MOTOROLA
Text: ) RMS Isolation Voltage ( 2 ) (for 1 sec, R.H. 30%) TC = 25°C 8 16 5 9 Per Figure 22 Per Figure 23 Per , ­220 FULLPACK (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ( 2 ) Proper strike and creepage distance , IEBO µAdc µAdc ON CHARACTERISTICS Base­Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (IC = 2 , TC = 25°C ton toff 200 2 2.5 350 2.5 ns µs ns Turn­on Time Turn­off Time ton toff td tr 190 3.7 4.5 250 4.5 µs ns ns Turn­on Time 125 400 600 450 250 225 2 2.5 300 750 1.2 Turn­off Time IC = 1 Adc, Adc


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PDF MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 BD388 transistor bd4202 BU108 motorola AN485 2SC122 MJE340 MOTOROLA
2001 - mje15033 replacement

Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON 2n3055 replacement 2SC1013 replacement MJ2955 replacement
Text: , f = 1.0 MHz) |hfe| 10 200 - SWITCHING CHARACTERISTICS RESISTIVE LOAD (Figure 2 , , COLLECTOR­EMITTER (VOLTS) 10 k 4 15 A 3 10 A 2 5A 1 0.5 0.0001 0.0003 0.001 0.002 0.005 0.01 0.02 IB, BASE , ) 10 15 Figure 2 . DC Current Gain Figure 3. Collector Saturation Region VCE , °C TJ = + 150°C + 25°C ­ 30°C 4 4 3 ­ 30°C + 25°C +150°C 3 2 1.5 1 0.5 0.2 2 1.5 1 0.5 2 0.5 1 5 IC, COLLECTOR CURRENT (AMPS) 10 15 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS


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PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON 2n3055 replacement 2SC1013 replacement MJ2955 replacement
2001 - BU108

Abstract: transistor Bc 574 MJ*15033 BU100 BU326 2SC1419 MJ3055 to220 2SC1943 2n6107 MOTOROLA 2N6277
Text: CHARACTERISTICS1 DC Current Gain (IC = 12 A, VCE = 2 V) (IC = 25 A, VCE = 4 V) hFE 20 10 60 , Current Gain ­ Bandwidth Product (VCE = 15 V, IC = 2 A, f = 4 MHz) fT 8.0 MHz SWITCHING , 25 A, A IB1 = IB2 = 3 A, A VCC = 100 V, RC = 4 ) 2 %. 1 Pulse Test: Pulse Width 300 µs, Duty , dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C, TJ(pk) is variable depending , ) Figure 2 . Active Region Safe Operating Area 2.0 IC/IB = 8 1.6 V, VOLTAGE (V) 50 VCE = 5 V 40 1.2


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PDF BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 MJ*15033 BU100 BU326 2SC1419 MJ3055 to220 2SC1943 2n6107 MOTOROLA 2N6277
2001 - 2SA1046

Abstract: mje15033 replacement 2SC1030 BD417 BD415 BU108 2SB528 BD262 2SC2080 BD295
Text: are Motorola recommended choices for future use and best overall value. REV 2 Motorola Bipolar , DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product ( 2 ) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = , µs, Duty Cycle ( 2 ) fT = |hfe| · ftest. v v 2.0%. VCC + 30 V 25 µs +11 V 0 51 ­ 9.0 V tr, tf , Figure 2 . Switching Time Test Circuit 3­102 Figure 3. Turn­On Time Motorola Bipolar Power Transistor , Data 3­103 CASE 221D Isolated TO­220 Type UL Recognized File #E69369 1 2 3 STYLE 1: PIN 1


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PDF 2N6057 2N6059 2N6050) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2SA1046 mje15033 replacement 2SC1030 BD417 BD415 BU108 2SB528 BD262 2SC2080 BD295
2001 - equivalent to tip162

Abstract: 2N3055 BU108 2SA1046 2n6258 2N5981 pnp transistor 2sd314 BD262 bd876 BU100
Text: Bandwidth Product ( 2 ) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0 , Registered Data. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle ( 2 ) fT = |hfe| · ftest. VCC + 80 V RC 8.0 , test conditions. 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 30 Figure 2 , CASE 221D Isolated TO­220 Type UL Recognized File #E69369 1 2 3 STYLE 1: PIN 1. BASE 2 . COLLECTOR 3. EMITTER Table 1. Plastic (Isolated TO­220 Type) Device Type ICCont Amps Max 1 2 VCEO(sus) Volts Min


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PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2N3055 BU108 2SA1046 2n6258 2N5981 pnp transistor 2sd314 BD262 bd876 BU100
2001 - pin configuration NPN transistor tip41c

Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT All similar transistor 2sa715 BU108 MJE520 MOTOROLA TIP41A semiconductors 2SA634 M
Text: 1.0 0.4 0.6 0.2 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 Figure 2 . Switching Time Test Circuit , = 10 x ICES 100°C 25°C 100 k 10 k IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM , Bipolar Power Transistor Device Data CASE 221D Isolated TO­220 Type UL Recognized File #E69369 1 2 3 STYLE 1: PIN 1. BASE 2 . COLLECTOR 3. EMITTER Table 1. Plastic (Isolated TO­220 Type) Device Type ICCont Amps Max 1 2 VCEO(sus) Volts Min 250 400 700 1000 3 5 100 100 400 450 700 1000 1000 550 6 400 450


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PDF TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41A TIP41B* TIP41C* pin configuration NPN transistor tip41c TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT All similar transistor 2sa715 BU108 MJE520 MOTOROLA TIP41A semiconductors 2SA634 M
2001 - 2SA1046

Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Text: 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 Figure 1. Switching Time Test Circuit Figure 2 . Turn­On , Transistor Device Data 3­139 CASE 221D Isolated TO­220 Type UL Recognized File #E69369 1 2 3 STYLE 1: PIN 1. BASE 2 . COLLECTOR 3. EMITTER Table 1. Plastic (Isolated TO­220 Type) Device Type ICCont Amps Max 1 2 VCEO(sus) Volts Min 250 400 700 1000 3 5 100 100 400 450 700 1000 1000 550 6 400 450 , 3 0.3 .005 0.3 0.5 0.5 0.5 2 3 5 1 1 4 4 3 1.5 8 Resistive Switching ts µs Max 2 typ 2.75(3) 2.75(3


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PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
2001 - BU108

Abstract: 2N3055 AN415A mje13005 BU100 BU326 2n3055 audio amplifier application note BDX54 MJE2955T ST BDV64
Text: CURRENT (AMP) 5.0 10 Figure 2 . DC Current Gain MJE2955T 2.0 TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V , #E69369 1 2 3 STYLE 1: PIN 1. BASE 2 . COLLECTOR 3. EMITTER Table 1. Plastic (Isolated TO­220 Type) Device Type ICCont Amps Max 1 2 VCEO(sus) Volts Min 250 400 700 1000 3 5 100 100 400 450 700 1000 1000 , 0.3 0.2 0.2 1 3 0.3 .005 0.3 0.5 0.5 0.5 2 3 5 1 1 4 4 3 1.5 8 Resistive Switching ts µs Max 2 typ , 2.5 1 2 3 3 2 3 5 2 2 - 5 13 typ 12 14 typ 14 typ 4 30 4 14 typ 13 typ 2 40 20(1) 12 8 fT MHz Min 10


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PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 2N3055 AN415A mje13005 BU100 BU326 2n3055 audio amplifier application note BDX54 MJE2955T ST BDV64
2001 - tip122 tip127 audio amp schematic

Abstract: BU108 BU326 D45H11 equivalent replacement tip122 tip127 audio amp MJE711 724 motorola NPN Transistor with heat pad 2sa940 2sc2073 pin configuration PNP transistor tip42c 2Sd331 npn transistor
Text: Voltage RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Fig. 14 Test No. 2 Per , @ TA = 25_C Derate above 25_C PD PD 30 0.24 Watts W/_C Watts W/_C IC 2 0.016 Operating and Storage , ) VCEO(sus) ICEO ICBO IEBO 100 - - - - Vdc 10 10 2 µAdc µAdc Collector Cutoff , Adc, VCE = 3 Vdc) VCE(sat) VBE(on) 2 3.5 Vdc Vdc 2.5 DYNAMIC CHARACTERISTICS , : Pulse Width 300 µs, Duty Cycle 2 %. 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST


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PDF MJF122 MJF127 TIP122 TIP127 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp schematic BU108 BU326 D45H11 equivalent replacement tip122 tip127 audio amp MJE711 724 motorola NPN Transistor with heat pad 2sa940 2sc2073 pin configuration PNP transistor tip42c 2Sd331 npn transistor
2001 - TRANSISTOR 2SC2366 TO220

Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA mjf18204 equivalent 2N3055 transistor equivalent BU108 SE9300 equivalent TRANSISTOR 2SC1669 BUS47AP RCA1C07
Text: ) RMS Isolation Voltage ( 2 ) (for 1 sec, R.H. 30%) TC = 25°C 5 10 2 4 Per Figure 22 Per Figure 23 Per , ­220 FULLPACK (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ( 2 ) Proper strike and creepage distance , mH) (IC = 200 mA, L = 25 mH, R = 2 ) Collector­Base Breakdown Voltage (ICBO = 1 mA, IE = 0 , 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) VBE(sat) Vdc 0.83 0.92 0.3 0.7 1.1 1.25 Collector­Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C VCE(sat


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PDF MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA mjf18204 equivalent 2N3055 transistor equivalent BU108 SE9300 equivalent TRANSISTOR 2SC1669 BUS47AP RCA1C07
2001 - BC 458

Abstract: 2SD128 BU108 2SC2488 2SC161 2SC111 BUX48 TIP32 FOOTPRINT BD241 2N55
Text: CHARACTERISTICS Current Gain - Bandwidth Product ( 2 ) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Small­Signal , (1) Pulse Test: Pulse Width ( 2 ) fT = hfe· ftest. 300 µs, Duty Cycle 2 %. Motorola Bipolar , , POWER DISSIPATION (WATTS) 25 µs 2 20 +11 V 0 1.5 15 TA (SURFACE MOUNT) TC ­9 V tr, tf 10 ns DUTY CYCLE , . Figure 1. Power Derating Figure 2 . Switching Time Test Circuit 500 300 hFE, DC CURRENT GAIN TJ = 150°C 25°C t, TIME ( µs) ­ 55°C VCE = 2 V 2 1 0.7 0.5 0.3 tr @ VCC = 30 V IC/IB = 10 TJ = 25


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PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 2SC2488 2SC161 2SC111 BUX48 TIP32 FOOTPRINT BD241 2N55
2001 - 2SC1943

Abstract: 2n5037 2SC2322 bd349 2sa1046 bD127 BUV18A mje5195 2SD341 2SC1903
Text: Saturation Voltage hFE = 20 (Min) @ 2 A, 2 V VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A · For Low , Emitter­Base Voltage Collector Current - Continuous - Peak (1) Base Current - Continuous - Peak (1) 10 15 2 , Cutoff Current (VBE = 5 Vdc) 500 500 IEBO ON CHARACTERISTICS (1) DC Current Gain (IC = 2 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc) hFE - 20 5 - - - 100 - 0.8 25 2 Collector­Emitter Saturation Voltage (IC = 2 Adc, IB = 0.2 Adc) (IC = 4 Adc, IB = 0.4 Adc) Base­Emitter On Voltage


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PDF MJ15011 MJ15012 MJ15011* MJ15012* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC1943 2n5037 2SC2322 bd349 2sa1046 bD127 BUV18A mje5195 2SD341 2SC1903
2001 - MJ802 EQUIVALENT

Abstract: bd139 equivalent mje521 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje340 equivalent 2sd880 equivalent MJL21193 equivalent equivalent buv18a MJE350 equivalent
Text: Voltages Leakage Currents MAXIMUM RATINGS ( 2 ) · · · · · 15 AMPERE NPN SILICON POWER TRANSISTOR 450 VOLTS , to + 200 _C THERMAL CHARACTERISTICS ( 2 ) Characteristic Symbol RJC TL Max 1.0 Unit , from Case for 5.0 Seconds 275 (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ( 2 ) Indicate JEDEC , Min Typ Max Unit Collector­Emitter Sustaining Voltage (Table 2 ) (IC = 100 mA, IB = 0) VCEO(sus) ICEV , DYNAMIC CHARACTERISTICS ( 2 ) Current Gain - Bandwidth Product (VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz


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PDF 2N6836 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ802 EQUIVALENT bd139 equivalent mje521 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje340 equivalent 2sd880 equivalent MJL21193 equivalent equivalent buv18a MJE350 equivalent
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