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D39C4-6 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
D39C4-6 D39C4-6 ECAD Model General Electric Semiconductor Data Handbook 1977 Scan PDF
D39C4-6 D39C4-6 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF

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mps 06

Abstract: MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
Text: -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6 D 39 J 4-6 80 60-500 10mA, 1 0.260 100mA, 10mA D38H4- 6 D38L1-3 40 2K-70K 2mA, 5 1.5 bOOmA. .5mA D39C1-3 D39C1-3 40 2K-70K 2mA, 5 1.75 500mA, .5mA D38L1-3 D38L4- 6 25 2K-70K 2mA, 5 mamtmm 500mA, .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 SILICON SIGNAL DARLINGTON TRANSISTORS TO , 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500MA D39C4-6 PNP 25 2K-70K 2mA


OCR Scan
PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
MPS51

Abstract: MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 MPS3702
Text: -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6 D 39 J 4-6 80 60-500 10mA, 1 0.260 100mA, 10mA D38H4- 6 D38L1-3 40 2K-70K 2mA, 5 1.5 bOOmA. .5mA D39C1-3 D39C1-3 40 2K-70K 2mA, 5 1.75 500mA, .5mA D38L1-3 D38L4- 6 25 2K-70K 2mA, 5 mamtmm 500mA, .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108


OCR Scan
PDF 100mA, MPSA55 MPS3702 MPS3704 MPS51 MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703
mpsa65

Abstract: MPSA55 MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 Silicon Transistors MPS3702.3 The , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA200 MPS3702, mpsa65 MPSA55 MPSA20
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 Silicon Transistors MPS6530 MPS6531 , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPSA56 MPSA20
MPS6566

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 MPSA56
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 Silicon Transistors The General Electric , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20VES MPS6566 MPSA20 MPSA56
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 Silicon Transistors The General , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA56 MPSA20
D38Y1-3

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA2034 MPS6532 D38Y1-3 MPSA20
D39J4

Abstract: MPSA55 MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 Silicon Transistors MPS6533 MPS6534 , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) D39J4 MPSA55 MPSA20
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: , .5mA D39C4-6 D39C4-6 25 2K-70K 2mA, 5 1 /5 D38L4- 6 108 á^sl » Silicon S sä/Kamms Transistors , 10 BHH 225 2.0 200 350 D39C1- 6 PNP 25/40 2,000 70,000 ■■■I 1.5 • 500 HH 90 50 500 500 D38H1- 6 NPN 60/80 ' w 500 kù -.- ■BwHI .125 TOO 10 100 7.0 500 500 D39J1- 6 PNP 60/80 60 500 - .2G 100 10 80 10.0 500 500 D38L1- 6 NPN 25/40 2,000 70,000 ': - 2 ■RH 1.75 500 90 50 500 500 D38S1 , -3 D39J1-3 60 60-500 10mA, 1 0.2&) 100mA, 10mA D38H1-3 D38H4- 6 80 60-500 10mA, 1 0.125 100mA, 10mA D39J4- 6


OCR Scan
PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20MPS6516 MPS6517 MPSA56 MPSA20
2N5306 equivalent

Abstract: ATI 200M D39C4 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5306
Text: , 500MA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO-98 PACKAGE Device Type BVCEO hFE , Silicon Transistors r^j 2N5305, 6 ,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 , pF pF 478 2N5305, 6 , 6A 2N5306A only Noite Voltage (Ic = 0.6 mA, Vce = 5V, Ro = 160kn f = 10 Hz , Transconductance Characteristic, VBE vs. Ic Iç-COLLECTOR CURRENT-mA Ic"COLLECTOR CURRENT-mA 479 2N5305, 6 , 6A , kHz) 1 _ _ 1 -^filiOkHi) ^lfi(IOkHi) 4 . 6 ; e I 2 COLLECTOR


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 2N5306
D39C4

Abstract: 2N5175 2N5174-2N5176 GES5308A GES5308 GES5307 GES5306A GES5306 2N3877 D38L1-3
Text: 2mA, 5 1.75 500mA, 500MA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO-98 PACKAGE , 500nA 60 .950 10mA, 1mA 111 Silicon Transistors r^j 2N5174,5, 6 The General Electric 2N5174-2N5176 , €ž VcHO Pt Pt T„n Tj Tr, 2N5174 75 5 90 25 360 260 2N5175, 6 100 5 130 25 200 120 -55 to


OCR Scan
PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5175 2N5174-2N5176 GES5308A GES5308 GES5307 2N3877 D38L1-3
NPN Transistor TO92 5V 200mA

Abstract: 2N3877A GES5306A GES5306 GES5305 D38L1-3 2N5306 to-98 2N5305 to-98 2n3877 transistor TO-98
Text: 2mA, 5 1.75 500mA, 500MA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO-98 PACKAGE , 6 ,000 Max. 1.4 1.6 1.5 V V V V DYNAMIC CHARACTERISTICS Forward current transfer ratio (Ic , I .2 .4 6 8 1 2 4 6 8 10 20 40 60 100 200 400 1000 Ic COLLECTOR CURRENT (mA) 1073


OCR Scan
PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A D38L1-3 2N5306 to-98 2N5305 to-98 2n3877 transistor TO-98
D39C4

Abstract: 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5175
Text: , 500MA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO-98 PACKAGE Device Type BVCEO hFE , Silicon Transistors r^j 2N5174,5, 6 The General Electric 2N5174-2N5176 are NPN silicon planar , 75 5 90 25 360 260 2N5175, 6 100 5 130 25 200 120 -55 to +150°C -55 to +125t +260°C â


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 2N5305 2N5175
2N4424

Abstract: D39C4 quan-tech 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4256
Text: , 500mA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO-98 PACKAGE Device Type BVceo hfe , 2 .4 . 6 6 i 2 4 6 610 20 40 60 100 200 400 1000 ic collector current |mi) vce vs. ic Normalized , €” •• — — — m 6 .8 I 2 COLLECTOR CURRENT - mA lì 3 S m S NOTE: Due to the noise


OCR Scan
PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech 2N5305
2N3877

Abstract: 2n3877a 2N3390 2N2926 2N2925 2N2924 2N2923 2N2714 2N2713 2N2712
Text: 2mA, 5 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500MA D39C4-6 PNP 25 2K-70K 2mA


OCR Scan
PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a
mhb 7001

Abstract: PJ 1269 D39C4 GES6220 GES6001 GES6000 GES5827 GES5826 GES5825 GES5823
Text: D38L1-3 NPN 40 2K-70K 2mA, 5 1.5 500mA, 500mA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500mA D39C4-6 , 60 120 , iiiiiliBi 6 .125 10 mm 100 2.0 100 360 GES5825 NPN 40 tos 200 111811 5 .125 ■mm MM 100 2 , GES5447 PNP 25 80 . 300 50 WÊÊÊM .25 < 50 5 150 5.0 200 G ES5448 PNP 30 36 * 150 50 5 25 50 6 150 , 4.3 2 0 5.3 3 o"1 .17 0 .210, fb .4 0 7 .5 5 0 .0 1 6 .0 2? .4 0 7 .4 8 2 .0 1 6 .01 9 3 4.4 5 , . SYMBOL MILLIMETERS INCHES NOTES MIN. MAX. MIN. MAX. A — 6.6 8 0 263 B — 10.1 6 0 .400 * b


OCR Scan
PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220 GES6001
GES5307

Abstract: 2N3901 monolithic amplifiers 2N5232A 2N3900A 2N3845A 2N3845 2N3844A 2N3844 2N3391A
Text: 1.5 500mA, 500mA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500mA D39C4-6 PNP 25 2K-70K 2mA, 5 , Darlington Amplifiers CONSUMER-INDUSTRIAL The General Electric GES5305, 6 , 6A, 7, 8, 8A are NPN, silicon , 0 fb .4 0 7 .5 5 0 .0 1 6 .0 2? 1.3 *b2 .4 0 7 .4 8 2. .0 1 6 .01 9 3 D 4.4 5 0 520 0 .1 7 5 , , 6 , 6A V(BR)CBO 25 Volts Collector to Emitter Breakdown Voltage (Ic = 10mA, IB = 0) GES5305, 6 , 6A , .4 . 6 5 1 2 4 6 610 20 40 60 100 200 400 1000 Ic COLLECTOR CURRENT lial] Normalized hFE vs. Ic


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 monolithic amplifiers 2N5232A
D39C4

Abstract: ei50 2n5306 2N5249A 2N5232A 2N3901 2N3900A 2N3845A quan-tech 2N3844A
Text: 1.5 500mA, 500MA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500MA D39C4-6 PNP 25 2K-70K 2mA, 5 , r^j 2N5305, 6 ,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are , pF pF 478 2N5305, 6 , 6A 2N5306A only Noite Voltage (Ic = 0.6 mA, Vce = 5V, Ro = 160kn f = 10 Hz , Transconductance Characteristic, VBE vs. Ic Iç-COLLECTOR CURRENT-mA Ic"COLLECTOR CURRENT-mA 479 2N5305, 6 , 6A , kHz) 1 _ _ 1 -^filiOkHi) ^lfi(IOkHi) 4 . 6 ; e I 2 COLLECTOR


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 2N5249A 2N5232A quan-tech
2N5089 equivalent

Abstract: D39C4 2N4126 2N4125 2N4124 2N4123 2N3906 2N3905 monolithic amplifiers 2N3903
Text: 40 2K-70K 2mA, 5 1.75 500mA, 500mA D39C4-6 PNP 25 2K-70K 2mA, 5 1.75 500mA, 500/iA TO , CONSUMER-INDUSTRIAL The General Electric GES5305, 6 , 6A, 7, 8, 8A are NPN, silicon, planar, epitaxial, passivated , MILLIMETERS INCHES NOTES Ml N. MAX. MAXj A 4.3 2 0 5.3 3 0 uTö1 .2 1 0 fb .4 0 7 .5 5 0 .0 1 6 .0 2? 1.3 *b2 .4 0 7 .4 8 2. .0 1 6 .01 9 3 D 4.4 5 0 520 0 .1 7 5 j .20 5 E 3.1 80 4.1 9 O .1 251.1 , . Collector to Base Breakdown Voltage (Ic = 0.1 ;UA, Ic = 0) GES5305, 6 , 6A V(BR)CBO 25 Volts Collector to


OCR Scan
PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 monolithic amplifiers
quan-tech

Abstract: D39C4 2N3901 2N5232A 2N3900A 2N3845A 2N3845 2N3844A ges92 2N3391A
Text: 1.5 500mA, 500mA D39C1-3 PNP 40 2K-70K 2mA, 5 1.75 500mA, 500mA D39C4-6 PNP 25 2K-70K 2mA, 5 , , B.W. = 18.7 kHz) filter. Typical Curves Typical Hfe vs. Ic 01 02 04 06 i 2 .4 . 6 6 i 2 4 6 610 20 , €” •• — — — m 6 .8 I 2 COLLECTOR CURRENT - mA lì 3 S m S NOTE: Due to the noise


OCR Scan
PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 2N5232A ges92
c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 1N21 4533 gem es5451 ES5449 2n4401 2n3904 2222a
Text: PS6535 MPS5172 M PS6076 D 38H1-3 D 39J1-3 D 38H 4-6 D 39J4-6 D 38L1-3 D39C1-3 D 3 8L4-6 D39C4-6 PNP b , MPS6532 MPS6076 MPS5172 D39J1-3 D38H1-3 D39J4- 6 D38H4- 6 D39C1-3 D 38L1-3 D39C4-6 D 38L4-6 « 5 0m A , T H , IR E L A N D TE L E P H O N E : D U N D A L K 32371 T E L E X : 6 500 Prop., General E le , 40 40 41 41 Type 1N4531 1N 4532 1N 4533 1N 4534 1N4536 1N4606 1N 4 6 0 7 1N 4608 1N 4727 1N 4 8 6 3 1N 5 0 5 9 1N 5060 1N5061 1N 5062 1N 5331 1N5332 1N 56 24 1N 5 6 2 5 1 N 5 6 26 1N5627 1N6264


OCR Scan
PDF
y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: L04 L04 L04 60V 25V 40V 50V 60V 2N 6 1 2N61A 2N61B 2N61C 2N62 PG PG PG PG PG T05 T05 T05 T05 OBS


OCR Scan
PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
SIECOR Fiber Optic cable 1995

Abstract: hitachi l23 reed relay SN75512 abb inverter manual acs 800 30F132 ABB inverter motor fault code inverter ABB ACS 300 irf 1507 data sheet TMS7020 29f1615
Text: payment are net, 30 days. Past due accounts subject to late payment charge of 2% per month. 6 NEWARK , over 16,500 linear and interface modules and hybrid devices as well as 6 ,000 power supplies. 81F3821


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PDF
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: published 38 times per year in the following sequence: 2 in Jan., 4 in Mar., 2 in Apr., 2 in May, 6 in Jun , Transistors (FETs) 6 . P-Channel. 233 7. N-Channel , • N CHANNEL Wax' vice dies 6 25‘C JWL. MAX fABS MAX RATINGS^ ^CT MAX' WAX. |_" Igssft , GDC 138- 50 HSE STI 402- 6 GPD HTN STI UPI DIT ETC STI 2G527 GDC 145- 66 NJS SPE 2N77 AMR 134 , STI 142- 6 SPE STC 2N78 AMR 148- 56 UPI STI 359- 7 388- 87 STI UPI CRI CSR 2N1 12 AMR 139- 76


OCR Scan
PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
0608, motherboard 845 GV ML

Abstract: 240V AC/TRANSFORMER bck 2801 SN75512 SN7401 ABB inverter motor fault code abb inverter manual acs 800 D64dS ABB inverter motor fault code ACS 401 vlt 2900 TL507
Text: .78 Tone Diallers, Clocks, Timers. 78 6 NEWARK ELECTRONIC ENGINEERING , /HYBRIDS Details over 16,500 linear and interface modules and hybrid devices as well as 6 ,000 power , GE 8.25 6 88 IN2134AR IR 7.35 4.90 1N746 MOTO .54 .25 1NI188RA GE 12.79 10.66 1NI343RA GE 8.25 6.88


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PDF
Supplyframe Tracking Pixel