The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

D225 Diode zener Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - D225 Diode

Abstract: D225 Diode 100 IEC61249-2-21
Text: drain current I D,pulse T C=25 °C2) -90 Avalanche energy, single pulse E AS I D=-22.5 , (on) V GS=-10 V, I D=-22.5 A - 9.4 13.0 m Gate resistance RG - 3.8 - Transconductance g fs 20 39 - S |V DS|>2|I D|R DS(on)max, I D=-22.5 A 1) 2 Device on 40 , D=22.5 A, R G=6 pF ns Gate Charge Characteristics 3) V DD=-24 V, I D=22.5 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS


Original
PDF BSC130P03LS IEC61249-2-21 130P03LS D225 Diode D225 Diode 100 IEC61249-2-21
2008 - D225 Diode

Abstract: No abstract text available
Text: Avalanche energy, single pulse E AS I D=-22.5 A, R GS=25 W 148 mJ Gate source voltage V GS , -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-22.5 A - , 39 - S |V DS|>2|I D|R DS(on)max, I D=-22.5 A 1) Device on 40 mm x 40 mm x 1.5 mm , - -90 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=22.5 A, R G=6 W pF ns Gate Charge Characteristics3) V DD=-24 V, I D=22.5 A, V GS=0 to -10 V V DD=-15 V, V GS


Original
PDF BSC130P03LS IEC61249-2-21 130P03LS D225 Diode
2008 - D225 Diode

Abstract: 130P03LS
Text: IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-A114-HBM T C=25 °C2) I D=-22.5 A, R GS=25 W , resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-22.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-22.5 A -30 -2,2 -1,5 -1 V Zero gate voltage drain current I DSS , total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD V GS=0 V, I F=-22.5 A, T j=25 °C V R=15 V, I F=|I S|, di F


Original
PDF BSC130P03LS IEC61249-2-21 130P03LS D225 Diode 130P03LS
2008 - D225 Diode

Abstract: No abstract text available
Text: Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-C101-HBM T C=25 °C2) I D=-22.5 A , resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-22.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-22.5 A -30 -2.2 -1.5 -1 V Zero gate voltage drain current I DSS , plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode , =-24 V, I D=22.5 A, V GS=0 to -10 V -7.7 -4.3 -20.5 -24.0 -54.9 -2.9 -14.8 -10.3 -5.7 -30.8 -35.4 -73.1 V


Original
PDF BSC130P03LS 130P03LS D225 Diode
2006 - Not Available

Abstract: No abstract text available
Text: Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-C101-HBM T C=25 °C2) I D=-22.5 A , resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-22.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-22.5 A -30 -2.2 -1.5 -1 V Zero gate voltage drain current I DSS , plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode , =-24 V, I D=22.5 A, V GS=0 to -10 V -7.7 -4.3 -20.5 -24.0 -54.9 -2.9 -14.8 -10.3 -5.7 -30.8 -35.4 -73.1 V


Original
PDF BSC130P03LS 130P03LS
2008 - D225 Diode

Abstract: 130P03LS D225 Diode 100 d225
Text: Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-C101-HBM T C=25 °C2) I D=-22.5 A , resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-22.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-22.5 A -30 -2.2 -1.5 -1 V Zero gate voltage drain current I DSS , plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode , =-24 V, I D=22.5 A, V GS=0 to -10 V -7.7 -4.3 -20.5 -24.0 -54.9 -2.9 -14.8 -10.3 -5.7 -30.8 -35.4 -73.1 V


Original
PDF BSC130P03LS 130P03LS D225 Diode 130P03LS D225 Diode 100 d225
2008 - diode k 1140

Abstract: D225 Diode 130P03LS
Text: DD=-15 V, V GS=10 V, I D=22.5 A, R G=6 pF ns Gate Charge Characteristics 3) V DD=-24 V, I D=22.5 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous , , single pulse E AS I D=-22.5 A, R GS=25 148 mJ Gate source voltage V GS ±25 V , R DS(on) V GS=-10 V, I D=-22.5 A - 9.4 13.0 m Gate resistance RG - 3.8 - Transconductance g fs 20 39 - S |V DS|>2|I D|R DS(on)max, I D=-22.5 A


Original
PDF BSC130P03LS 130P03LS diode k 1140 D225 Diode 130P03LS
2008 - 139n08n

Abstract: D225 SMD 136N08N IPP139N08N3 PG-TO-220-3 SMD F45 SMD diode D45 IPP139N08N3 G D225 Diode D45 1730
Text: GS=10 V, I D=45 A - 11.8 13.9 m V GS=6 V, I D=22.5 A - 16.0 26 V GS=10 V, I D=45 A, (SMD) - 11.5 13.6 V GS=6 V, I D=22.5 A, (SMD) - 16.0 26.0 - 2 , V - 50 - ns - 74 - nC V DD=40 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD , 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD


Original
PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 IEC61249-2-21 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139n08n D225 SMD 136N08N PG-TO-220-3 SMD F45 SMD diode D45 IPP139N08N3 G D225 Diode D45 1730
2008 - 139n08n

Abstract: D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO IPP139N08N3 PG-TO-220-3 JESD22
Text: V GS=6 V, I D=22.5 A - 16.0 26 V GS=10 V, I D=45 A, (SMD) - 11.5 13.6 V GS=6 V, I D=22.5 A, (SMD) - 16.0 26.0 - 2 - 24 48 - S Drain-source , - nC V DD=40 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse , [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS


Original
PDF IPP139N08N3 IPI139N08N3 IPB136N08N3 PG-TO-220-3 PG-TO-262-3 PG-TO-263-3 139N08N 139n08n D225 SMD SMD diode D45 136N08N MARKING d45 139N08 PG-TO PG-TO-220-3 JESD22
D560 transistor

Abstract: nec D560 transistor transistor d560 transistor D1138 KS51850 KS51850 D4 d1138 transistor Samsung tv remote control circuit diagram d560 nec nec D560
Text: No file text available


Original
PDF KS51850 KS51850, SMCS-51 KS51850 fxx/12 0800h 0900h 0a00h D560 transistor nec D560 transistor transistor d560 transistor D1138 KS51850 D4 d1138 transistor Samsung tv remote control circuit diagram d560 nec nec D560
Not Available

Abstract: No abstract text available
Text: D225 D500 D1000 Wattage 12 25 50 75 100 175 225 500 1000 Ohms , / 152.4 100 D175 D225 0.562 / 14.3 6.5 / 165.1 175 0.750 / 19.1 8.5


Original
PDF
transistor D1138

Abstract: D1138 D1138 transistor Samsung tv remote control circuit diagram KS51840 KS51850 D4 mov k30 samsung tv remote control diagram circuit D1125 ks51840.xx
Text: No file text available


Original
PDF SMCS51 KS51840 KS51840, SMCS-51 KS51840 1072/fxx 0800h 0900h transistor D1138 D1138 D1138 transistor Samsung tv remote control circuit diagram KS51850 D4 mov k30 samsung tv remote control diagram circuit D1125 ks51840.xx
2008 - Not Available

Abstract: No abstract text available
Text: R DS(on) V GS=10 V, I D=45 A - 11.4 13.5 mW V GS=6 V, I D=22.5 A - 16.0 , GS=0 to 10 V V DD=40 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t , 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS


Original
PDF IPD135N08N3 IEC61249-2-21 PG-TO-252-3 135N08N
2012 - 024N06

Abstract: ipd024n
Text: resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=90 A V GS=6 V, I D=22.5 A Gate resistance , voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max , . capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD


Original
PDF IPD024N06N IEC61249-2-21 O-252-3 024N06N 50K/W 024N06 ipd024n
2014 - Not Available

Abstract: No abstract text available
Text: ICATI O N S Series D12 D25 D50 D75 D100 D175 D225 D500 D1000 , 25 D75 75 D100 L 2.0 / 50.8 6.0 / 152.4 100 D175 D225


Original
PDF
2012 - Not Available

Abstract: No abstract text available
Text: resistance R DS(on) V GS=10 V, I D=90 A - 2.1 2.5 mW V GS=6 V, I D=22.5 A - 2.7 , =0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q , Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS


Original
PDF IPD025N06N IEC61249-2-21 O-252-3 025N06N
2007 - 3N06L13

Abstract: ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
Text: D,pulse T C=25 °C 180 Avalanche energy, single pulse2) E AS I D=22.5 A 145 mJ , Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode , 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12


Original
PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
2006 - Not Available

Abstract: No abstract text available
Text: . Generated 9/12/2012 - 4ae8e3b0- d225 -4286-bb7d-d492d6166089 © 2006-2012 IntelliData.net KEMET


Original
PDF C0402C471K3RACTU C0402C471K3RAC7867) 4ae8e3b0-d225-4286-bb7d-d492d6166089
2012 - IPD025N06N

Abstract: d90a D225 Diode 8171v IPD025N06 ipd025n
Text: (on) V GS=20 V, V DS=0 V V GS=10 V, I D=90 A V GS=6 V, I D=22.5 A Gate resistance Transconductance RG , Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max , 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 103 Ciss


Original
PDF IPD025N06N IEC61249-2-21 O-252-3 025N06N 50K/W IPD025N06N d90a D225 Diode 8171v IPD025N06 ipd025n
2012 - Not Available

Abstract: No abstract text available
Text: resistance R DS(on) V GS=10 V, I D=90 A - 2.1 2.5 mW V GS=6 V, I D=22.5 A - 2.7 , =0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q , . capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD


Original
PDF IPD025N06N IEC61249-2-21 O-252-3 025N06N
2008 - C245T

Abstract: 135N08N D225 Diode JESD22
Text: resistance R DS(on) V GS=10 V, I D=45 A - 11.4 13.5 m V GS=6 V, I D=22.5 A - 16.0 , - nC V DD=40 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse , [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS


Original
PDF IPD135N08N3 PG-TO-252-3 135N08N C245T 135N08N D225 Diode JESD22
E105 tantalum

Abstract: d684 capacitor C475 E474 1E68 C475 sy 160 1C106M SY5-1C685M-RA diode c335
Text: -1D155M-RA 3,000 3,000 2,000 3,000 2,000 2.2 2.2 2.2 3.3 3.3 D225 D225 D335 3216L


Original
PDF 120Hz) 120Hz 100kHz) -1C334M-RP -1C474M-RP -1C684M-RP -1E156M-RC -1E156M-RD0 -1E226M-RD0 -1E336M-RD0 E105 tantalum d684 capacitor C475 E474 1E68 C475 sy 160 1C106M SY5-1C685M-RA diode c335
RLink

Abstract: MC92602 MC92602RMAD
Text: Freescale Semiconductor, Inc. Section, Page No. B.2, B-6 Changes In Table B-2, Data Name D22.5 has an , 011010 1010 011010 1010 Freescale Semiconductor, Inc. D22.5 MOTOROLA Errata to MC92602


Original
PDF MC92602RMAD MC92602 MC92602 RLink MC92602RMAD
2012 - Not Available

Abstract: No abstract text available
Text: Temp. ~-22°F to ~+122°F (~-30°C to ~+50°C) Dimensions L24.0 in x W18.0 in x D2.25 in


Original
PDF 10-30VDC SLL003-x00-TPW-014M3 10-to-30VDC SLL003-400-TPW-014M3 SLL003-800-TPW-014M3 3850mA
2000 - Not Available

Abstract: No abstract text available
Text: block) Cable size O-noFerruleor Boot A-1BO" -.194" B-.195"- .209" C-.210" -.224" D-.225 " -.239"


Original
PDF SFF-8420. SFF-8420specification. UL94V-O over50 U46-xx1-0xx M182X6 U46-xx1-xxx
Supplyframe Tracking Pixel