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10GXS13D15A1000 Belden Inc Allied Electronics & Automation - $1602.93 $1373.95
10GXS33D15A1000 Belden Inc Allied Electronics & Automation - $1728.00 $1481.14
1213 D15A1000 Belden Inc Allied Electronics & Automation - $558.67 $478.86
1213F D15A1000 Belden Inc Allied Electronics & Automation - $1083.93 $929.07
2183P D15A1000 Belden Inc Allied Electronics & Automation - $1854.54 $1589.61
2183P D15A1000 Belden Inc Newark element14 1 $1924.98 $1780.32
2183P D15A1000 Belden Inc element14 Asia-Pacific 1 $2320.65 $2177.84
2183P D15A1000 Belden Inc Farnell element14 1 £1572.00 £1435.00
2413 D15A1000 Belden Inc Allied Electronics & Automation - $687.49 $589.28
PSD-15A-12 Mean Well Jameco Electronics - $7.95 $7.49
PSD-15A-12 Mean Well Sager - $8.22 $7.69
PSD-15A-12 Mean Well Schukat electronic 8 €6.14 €5.50
PSD-15A-12 Mean Well TME Electronic Components 2 $8.99 $7.43
PSD-15A-12 Mean Well Allied Electronics & Automation - $10.00 $9.03
PSD-15A-12 Mean Well Master Electronics 89 $8.76 $7.51
SD-15A-12 Mean Well TME Electronic Components 99 $11.41 $10.05
SD-15A-12 Mean Well Future Electronics - $12.10 $11.16
SD-15A-12 Mean Well Schukat electronic 53 €8.75 €7.85
SD-15A-12 Mean Well Master Electronics 77 $12.46 $10.70
SD-15A-12 Mean Well Chip1Stop 2 $21.70 $21.70
SD-15A-12 Mean Well Allied Electronics & Automation 78 $12.70 $11.62
SD-15A-12 Mean Well element14 Asia-Pacific 1 $20.34 $16.94
SD-15A-12 Mean Well Jameco Electronics 103 $12.10 $9.89
SD-15A-12 Mean Well Farnell element14 1 £16.79 £13.74
SD-15A-12 Mean Well Sager 23 $12.10 $10.37
VESD15A1-HD1-G4-08 Vishay Intertechnologies Chip1Stop 7,675 $0.22 $0.11
VESD15A1-HD1-G4-08 Vishay Intertechnologies Avnet - $0.04 $0.04
W1D15A120A AVX Corporation Avnet - $0.09 $0.08

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D15/A-1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
ZR61

Abstract: D15A n4007 diode ZR204 DO 1 ZR602 ZR30C Scans-00109897 ZR31C ZR32C
Text: amp. Surge Ratings at 25°C Case Temp, amp. Peak ( 1 mS) Average (5 mS) Reverse Current atVRWM and , 0 05 0 05 0 05 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO- 1 ,2,3 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO , Peak ( 1 mSec) Average (5 mSec) 25°C 100°C ZR30C ZR31C ZR32C ZR33C ZR34C ZR35C ZR30CR


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PDF ZR30C ZR31C ZR32C ZR33C ZR34C ZR35C ZR30CR ZR35CFI ZR200 ZR201 ZR61 D15A n4007 diode ZR204 DO 1 ZR602 Scans-00109897
spdt 6v relay datasheet

Abstract: R24-5D10-24V relay 6V 9V SPDT R24-5D10-12FP R24-5D10-12V R24-5D10-24FP 6v spdt relay spdt 12v relay datasheet RELAY PCB SPDT 12V R24-5D10-6V
Text: (2.54) .100 (2.54) .700 (17.78) SPDT, 1 Form "C" 1 5 3 .300 (7.62) .110 (2.79 , operating temperature. 1 3 1.140 (29.0) Max .100 (2.54) .100 (2.54) .300 (7.62) .059 (1.5


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PDF R24-5D10-24FP 24VDC 600mW R24-5D10-6V spdt 6v relay datasheet R24-5D10-24V relay 6V 9V SPDT R24-5D10-12FP R24-5D10-12V R24-5D10-24FP 6v spdt relay spdt 12v relay datasheet RELAY PCB SPDT 12V R24-5D10-6V
R24-5D10-6FP

Abstract: R24-5D10-12V R24-5D10-12FP 12FP 5D10 R24-5D10-24FP R24-5D10-24V
Text: (2.54) .100 (2.54) .700 (17.78) SPDT, 1 Form "C" 1 5 3 .300 (7.62) .110 (2.79 , operating temperature. 1 3 1.140 (29.0) Max .100 (2.54) .100 (2.54) .300 (7.62) .059 (1.5


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PDF 600mW R24-5D10-24FP 24VDC R24-5D10-6V R24-5D10-6FP R24-5D10-12V R24-5D10-12FP 12FP 5D10 R24-5D10-24FP R24-5D10-24V
1997 - ZVN4210

Abstract: resh S10A fet ZVN4210G DSA003737
Text: (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 RDS(on)-Drain Source On , V GS(th) 400 0.8 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 0 0 3 2 1 4 , =1.5A On-State Drain Current( 1 ) I D(on) Static Drain-Source On-State Resistance ( 1 ) R DS(on) Forward Transconductance( 1 )(2) g fs VDD= 20V 50V 80V 14 2.4 Gate-Body Leakage 200 100 Transconductance , at T amb=25°C 10 1.0 V DS Operating and Storage Temperature Range 1 0.1


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PDF OT223 ZVN4210G ZVN4210 DD25V, ZVN4210 resh S10A fet ZVN4210G DSA003737
R24-5D10-12FP

Abstract: R24-5D10-24FP R24-5D10-6FP 12FP 5D10 R24-5D10-6V R24-5D10-24V R24-5D10-12V
Text: ) Max .158 (4.0) .100 (2.54) .100 (2.54) .300 (7.62) .059 (1.5) 1 5 3 .476 , temperature. 1 3 .300 (7.62) .110 (2.79) .700 (17.78) SPDT, 1 Form "C" .100 (2.54


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PDF R24-5D10-24FP 24VDC 600mW R24-5D10-6V R24-5D10-12FP R24-5D10-24FP R24-5D10-6FP 12FP 5D10 R24-5D10-6V R24-5D10-24V R24-5D10-12V
R24-5D10-12V

Abstract: R24-5D10-24V R24-5D10-6V R24-5D10-12FP R24-5D10-6FP R24-5D10-24FP 12FP 5D10 RELAY SPDT 10A 24VDC
Text: (2.54) .100 (2.54) .700 (17.78) SPDT, 1 Form "C" 1 5 3 .300 (7.62) .110 (2.79 , operating temperature. 1 3 1.140 (29.0) Max .100 (2.54) .100 (2.54) .300 (7.62) .059 (1.5


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PDF Elect10A R24-5D10-24FP 24VDC 600mW R24-5D10-6V R24-5D10-12V R24-5D10-24V R24-5D10-6V R24-5D10-12FP R24-5D10-6FP R24-5D10-24FP 12FP 5D10 RELAY SPDT 10A 24VDC
1997 - ZVN4210A

Abstract: DSA003784 D15A
Text: 2 4V 3.5V 3V 2.5V 2V 10 1 5V 6V 8V 10V VGS=3V 3.5V 100 ZVN4210A ISSUE 2 ­ , Source Voltage (Volts) 1 0.1 2.0 1.8 s Re 1.6 ist ce an RD VGS=10V ID , ) On-State Drain Current( 1 ) I D(on) A V DS=25V, V GS=10V Static Drain-Source On-State Resistance ( 1 ) 200 R DS(on) V GS=10V,I D=1.5A V GS=5V,I D=500mA mS V DS=25V,I D=1.5A 100 0 0 3 2 1 4 5 VDD= 20V 50V 80V 14 Forward Transconductance( 1 )(2 g fs


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PDF ZVN4210A 50ISTICS ZVN4210A DSA003784 D15A
2SK1833

Abstract: D15A
Text: 30ns · No secondary breakdown U nit : mm 10.0±0.2 , 5.5±0.2 , 2.7±0.2 4.2±0.2 03.1±O. 1 , 15.6 40 2 150 -55 to +150 Unit V V A A mJ W °C °C 1 2 3 n~j~n n~j~n irj~n Symbol V dss V gss Id I dp EAS* 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) Avalanche energy , , 1 pulse Electrical Characteristics (Tc = 25°C) Parameter Drain-Source cut-off current , =1.5A VDS= 25 V, I d=1.5A IDr = 2.5A, V(3s= 0 Min Typ Max 0.1 ± 1 Unit mA pA V V Q 500 2 3.2


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PDF 2SK1833 capacitance155' 2SK1833 D15A
Not Available

Abstract: No abstract text available
Text: * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required * Characterised for 5V , Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot I SD I AR E AR T j:T stg VALUE 60 1 8 , Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current ( 1 ) Static Drain-Source On-State Resistance ( 1 ) Forward Transconductance ( 1 )(2) Input Capacitance (2) Common Source Output , C rss t d(on) tr t d(off) tf 300 100 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT


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PDF OT223 ZVN4206V ZVN4206GV 522-ZVN4206GVTA ZVN4206GVTA
Not Available

Abstract: No abstract text available
Text: f = 10 MHz Pin capacity Cp — 15 pF Vin = 0 V f = 1 MHz Tk = 25°C Oscillation limit resistance Rs - — 500 » f = 1 MHz — — 60 f = 4 MHz — — 20 f = 8 MHz — — 15 f = 10 MHz 528 , Figure 17-3 Input clock fall time «EXf - 25 - 10 ns CPU Bus Cycle Address delay time 1 lADl - 60 - 60 ns Figure 17-4 Address delay time 2 lAD2 30 - 20 - ns Address delay time to high impedance 1 tADZl , from AS *ASS 10 - 7 - ns Figure 17-4 Hold time from AS 1 'ASH1 30 - 25 - ns Hold time from ÄS 2


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PDF 1s2074 C-90pF,
1998 - ZVN4206GV

Abstract: ZVN4206V DSA003737
Text: * 60 Volt VDS * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required , Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C ID 1 A Pulsed , DS=48V, V GS=0V, T=125°C (2) On-State Drain Current ( 1 ) I D(on) A V DS=25V, V GS=10V Static Drain-Source On-State Resistance ( 1 ) R DS(on) V GS=10V, I D=1.5A V GS=5V, I D=0.5A Forward Transconductance ( 1 )(2) g fs mS V DS=25V,I D=1.5A Input Capacitance (2) C iss


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PDF OT223 ZVN4206GV ZVN4206V ZVN4206GV ZVN4206V DSA003737
Not Available

Abstract: No abstract text available
Text: =80V, V GS=0V, T=125°C (2) On -St at e Drain Cur ren t( 1 ) I D(o n ) A V DS=25V, V GS=10V St ati c Drai n-So ur ce On -State Resi st an ce ( 1 ) RDS(o n ) Ω V GS=10V,I D=1.5A V GS=5V,I D=500m A mS V DS=25V,I D=1.5A For w ar d Tr an scond uctance( 1 )(2 g f s ) 2.5 1.5 , 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 0 0 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts) 10 1 0.1 On-resistance v drain current 1000 2.4


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PDF ZVN4210A
1998 - 5V RELAY

Abstract: ZVN4206AV DSA003784 D15A
Text: Volt VDS * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required , =48V, V GS=0V, T=125°C (2) On-State Drain Current( 1 ) I D(on) Static Drain-Source On-State Resistance ( 1 ) R DS(on) Forward Transconductance( 1 )(2) g fs 3 A V DS=25V, V GS=10V 1 1.5 , DS=25V, V GS=0V, f=1MHz ns V DD 25V, I D=1.5A,V GEN=10V ( 1 ) Measured under pulsed conditions , ) gfs-Transconductance (mS) 1000 VDS=10V 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8


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PDF ZVN4206AV 5V RELAY ZVN4206AV DSA003784 D15A
Not Available

Abstract: No abstract text available
Text: e Drain Cu r ren t ( 1 ) I D(o n ) St at i c Dr ai n-Sou rce On-State Resi st an ce ( 1 ) RDS(o n ) Forw ard Transconductance( 1 )(2) g f s 2.5 1.5 1.8 250 Inp ut Cap acit an ce (2 , (o f f ) 20 ns Fall Tim e (2)(3) tf 30 ns V DD≈25V, I D=1.5A ( 1 ) Measured , BOL M IN. TYP M A X. UN IT CONDITION S. Di ode For w ard Vol t ag e ( 1 ) V SD - 0.79 , S=1.0A , V GS=0V ns I F=0.45A, V GS=0V, I R=100m A , V R=10V ( 1 ) M easured under pulsed


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PDF OT223 ZVN4210G ZVN4210
Not Available

Abstract: No abstract text available
Text: Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb = 25°C ID 1 A Pulsed , GS=0V V DS=48V, V GS=0V, T=125°C (2) On-State Drain Current ( 1 ) I D(on) A V DS=25V, V GS=10V Static Drain-Source On-State Resistance ( 1 ) R DS(on) Ω Ω V GS=10V, I D=1.5A V GS=5V, I D=0.5A Forward Transconductance ( 1 )(2) g fs mS V DS=25V,I D=1.5A Input , ) tf 15 ns 3 1 1.5 300 V DS=25V, V GS=0V, f=1MHz V DD ≈25V, I D=1.5A, V GEN =10V


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PDF OT223 ZVN4206GV ZVN4206V
2008 - Not Available

Abstract: No abstract text available
Text: Typ Max Units V VDS=-30V, VGS=0V - 1 TJ=55°C -5 IGSS Gate-Body leakage current , Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr S - 1 15.2 Qgd , junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in , =-4V 10 25°C 5 0 0 0 1 2 3 4 5 2 2.5 12 Normalized On-Resistance


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PDF AO4413 AO4413/L AO4413 AO4413L -AO4413L
ytf541

Abstract: No abstract text available
Text: 2.5410.25 60 60 ± 20 27 1 . GA T E V V A JE D E C EI A J TOSHIBA 2. D R A I N Í H E A T SI N K , . 1 .0 80 300 UNIT TJ/W C/H "C Ther mal R e s i s t a n c e , C h a n n e l H u x i i u i lead l e i p e r a t u r e f o r S o ld e rin g P u r p o s e s ( 1 . 6 m i f r o i ca s e f o r 10 s , = ± 20V, VDS= 60V, 1 D= 250 //A, VDS=10 V, VDS=0V VGS=0V VGS=0V MIN. 60 2 .0 6 .0 0 07 10 1000 100 500 , U , t w = 1 0 w s V G V rL 10V n J * % R L = 2fl VDD%30V _ - SOURCE-DRAIN DIODE


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PDF YTF541 00A/ws ytf541
DIP40

Abstract: MR27V452D a1334 mr27v452
Text: OKI 2008 10 1 OKI OKI OKI 2008 10 1 OKI 193-8550 550-1 http , -525-1.27-K) (MR27V452D-xxMP) 44TSOP (TSOP II 44-P-400-0.80-K) (MR27V452D-xxTP) 1999.11 1 /7 MR27V452D l n NC 1 NC 2 A17 3 A7 4 A6 3 A3 8 A2 9 A1 10 35 A13 34 A14 A1 8 33 A15 A0 9 , A6 5 A5 6 A4 7 40 A8 A17 1 A7 2 44 NC 43 NC 42 A8 32 A16 A0 11 39 A11 38 A12 , 13 29 D15/A- 1 OE 14 D0 15 31 D15/A- 1 D8 14 27 D14 26 D6 D8 16 D1 17 29 D14


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PDF MR27V452D 144-Word 16-Bit 288-Word 16-Word MR27V452D4M MR27V452DCMOS40 DIP40SOP44TSOP 40DIP DIP40 MR27V452D a1334 mr27v452
Not Available

Abstract: No abstract text available
Text: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N ISSUE 1 - NOVEMBER n, OO I E ] Qi m _ I 1 s, g2 Di o r d2 I r~ L_L_ PARTMARKING DETAIL - M4206N Si , *SD VALUE 60 1 8 + 20 1 600 15 -55 t o +150 U N IT V A A V A mA mj 'C Ur Ear V U . THERMAL , lD=1m A, V DS= V GS VGg=± 20V, V DS=0V V Ds=60V, V Qs=0 Vds=48V, V gS=0V, T = 1 2 5 0C(2) fGSS tass 3 On-State Drain Current) 1 ) Static Drain-Source On-State Resistance ( 1 ) Forward


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PDF ZDM4206N M4206N
2007 - Not Available

Abstract: No abstract text available
Text: Min ID=-250µA, VGS=0V -30 Typ Max Units V VDS=-30V, VGS=0V - 1 TJ=55°C -5 , S - 1 15.2 Qgd trr mΩ -4.2 Reverse Transfer Capacitance Rg mΩ mâ , Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The , 125°C 15 10 VGS=-4V 10 25°C 5 0 0 0 1 2 3 4 5 2 2.5 12


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PDF AO4413 AO4413 AO4413L
2004 - Not Available

Abstract: No abstract text available
Text: Typ Max Units V VDS=-24V, VGS=0V - 1 TJ=55°C -5 IGSS Gate-Body leakage current , SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 38 S - 1 V -4.2 A , ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz , -4.5V -ID(A) -ID (A) 40 20 125°C 15 10 VGS=-4V 10 25°C 5 0 0 0 1


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PDF AO4413, AO4413L AO4413
2005 - Not Available

Abstract: No abstract text available
Text: Typ Max Units V VDS=-24V, VGS=0V - 1 TJ=55°C -5 IGSS Gate-Body leakage current , SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 38 S - 1 V -4.2 A , ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz , °C 5 0 0 0 1 2 3 4 2 5 2.5 12 Normalized On-Resistance 10 RDS(ON


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PDF AO4413 AO4413 AO4413L AO4413L
YTF540

Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOS h ) HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: ·Low Drain-Source ON Resistance : ROS(ON)= 0.07ß (Typ.) ·High Forward Transfer Admittance : i Y f s | =10S (Typ.) · Low Leakage Current : I DSS= 250^A(Hax.) 3 VDS=100V · Enhancement-Hode : V th= 2 .0 -4 .0 V i VDS=10V, 1 D= 250>uA , . Í3.6I0.2 - Of . 1 »6MAI. 2,S4t0.25 . . . 2.5¿±0.25 : 4., a ft ^ f-l - 2 - 1


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PDF 10/oe VGS-10V, 00A//ts YTF540
2005 - AO4413

Abstract: AO4413A AO4413AL
Text: Min ID=-250µA, VGS=0V -30 Typ Max Units V VDS=-24V, VGS=0V - 1 TJ=55°C -5 , SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge m m 48 S - 1 V 5 A , characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA , -10V 15 125°C 15 10 10 VGS=-3.5V 5 25°C 5 0 0 0 1 2 3 4 5


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PDF AO4413A AO4413A AO4413AL AO4413AL AO4413
44-sop

Abstract: MR27V6452D
Text: OKI 2008 10 1 OKI OKI OKI 2008 10 1 OKI 193-8550 550-1 http , MAX 30ns MAX l TTL l l 44SOP (SOP44-P-600-1.27-K) (MR27V6452D-xxMA) 1999.11 1 /7 MR27V6452D l n A21 1 44 A20 A18 2 43 A19 A17 3 42 A8 A7 4 41 A9 A6 5 40 A10 , 34 A16 33 BYTE 32 VSS CE 12 VSS 13 OE 14 D0 15 31 D15/A- 1 D8 16 29 D14 D1 17 , 30 D7 44SOP D15/A- 1 A0A21 D0D14 CE OE VCC VSS BYTE


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PDF MR27V6452D 608-Word 304-Word 16-Bit 16-Word 16-Bit MR27V6452D64M MR27V6452DCMOS 44SOP 120ns 44-sop MR27V6452D
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