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D-81541 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
S289P

Abstract: Telefunken Phototransistor
Text: Document Number 81541 Rev. 2, 20-May-99 Test Conditions tp/T = 0.05, tp Tamb 25 °C x t , 2. Collector Dark Current vs. Ambient Temperature Document Number 81541 Rev. 2, 20 , ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 , www.vishay.com 4 (5) Document Number 81541 Rev. 2, 20-May-99 S289P Vishay Telefunken Ozone Depleting , ( 0 ) 7131 67 2423 Document Number 81541 Rev. 2, 20-May-99 www.vishay.com 5 (5) Vishay


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PDF S289P S289P 850nm. D-74025 20-May-99 Telefunken Phototransistor
2001 - S289P

Abstract: phototransistor, 850nm
Text: /Ambient Document Number 81541 Rev. 2, 20-May-99 Test Conditions tp/T = 0.05, tp Tamb 25 °C , ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81541 Rev. 2, 20 , ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 , 12190 www.vishay.com 4 (5) Document Number 81541 Rev. 2, 20-May-99 S289P Vishay , , Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81541 Rev


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PDF S289P S289P 850nm. D-74025 20-May-99 phototransistor, 850nm
1999 - S289P

Abstract: Telefunken Phototransistor
Text: Document Number 81541 Rev. 2, 20-May-99 Test Conditions tp/T = 0.05, tp Tamb 25 °C x t , Temperature ( °C ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81541 Rev , ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 , Dimensions in mm 96 12190 www.vishay.de · FaxBack +1-408-970-5600 4 (5) Document Number 81541 Rev , ) 7131 67 2423 Document Number 81541 Rev. 2, 20-May-99 www.vishay.de · FaxBack +1-408-970-5600 5


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PDF S289P S289P 850nm. D-74025 20-May-99 Telefunken Phototransistor
PEB 2235

Abstract: PEF2055N PEB 20570 PEB 2036 a6059 Q67100-H6104 PEB 2075-N D-81541 PEF 2235 PEB 3086 F
Text: delivery: 30th September 2002 31st March 2003 Infineon Technologies AG, St.-Martin-Str. 53, D-81541 , : 30th September 2002 31st March 2003 Infineon Technologies AG, St.-Martin-Str. 53, D-81541 München , Infineon Technologies AG, St.-Martin-Str. 53, D-81541 München 3/6 2003-01-28 Product , , St.-Martin-Str. 53, D-81541 München 4/6 2003-01-28 Product Discontinuation !! 5th Update !! 47/00 , Last delivery: 31st March 2003 Infineon Technologies AG, St.-Martin-Str. 53, D-81541 München 5/6


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PDF Q67106-H6534 Q6723x-H1243 Q6723x-H1244 Q67100-H6035 Q67106-H6035 Q67230-H1422 Q67100-H6036 Q67100-H6216 PEB 2235 PEF2055N PEB 20570 PEB 2036 a6059 Q67100-H6104 PEB 2075-N D-81541 PEF 2235 PEB 3086 F
2001 - Not Available

Abstract: No abstract text available
Text: °C K/W tp/T = 0.05, tp Tamb 25 °C x x 10 ms t x5s Document Number 81541 Rev. 2, 20 , vs. Ambient Temperature www.vishay.com 2 (5) Document Number 81541 Rev. 2, 20-May-99 S289P , ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 Rev. 2, 20 , ) Document Number 81541 Rev. 2, 20-May-99 S289P Vishay Telefunken Ozone Depleting Substances Policy , 81541 Rev. 2, 20-May-99 www.vishay.com 5 (5) Vishay Telefunken


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PDF S289P S289P 850nm. D-74025 20-May-99
2005 - phototransistor no s289p

Abstract: S289P
Text: °C K/W tp/T = 0.05, tp Tamb 25 °C x x 10 ms t x5s Document Number 81541 Rev. 2, 20 , Current vs. Ambient Temperature www.vishay.com 2 (5) Document Number 81541 Rev. 2, 20 , ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 Rev. 2, 20 , ) Document Number 81541 Rev. 2, 20-May-99 S289P Vishay Semiconductors Ozone Depleting Substances Policy , Document Number 81541 Rev. 2, 20-May-99 www.vishay.com 5 (5) Legal Disclaimer Notice Vishay


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PDF S289P S289P 850nm. 08-Apr-05 phototransistor no s289p
2009 - phototransistor no s289p

Abstract: S289P s289
Text: /Ambient Document Number 81541 Rev. 2, 20-May-99 Test Conditions tp/T = 0.05, tp Tamb 25 °C , ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81541 Rev. 2, 20 , ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 , 12190 www.vishay.com 4 (5) Document Number 81541 Rev. 2, 20-May-99 S289P Vishay , , Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81541 Rev


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PDF S289P S289P 850nm. 18-Jul-08 phototransistor no s289p s289
Not Available

Abstract: No abstract text available
Text: Balanstrasse 73 D-81541 München Tel. (089)4144-4701 Fax (089)4144-3817 Leistungsbeweis'94: 3000 Kurs-Teilnehm , Microelectronics Training Center Mch B /R 0 143 d Attn Mrs Kandlbinder Balanstrasse 73 D-81541 München Tel. (089


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PDF 1/C500 16-bit 80x86/Pentium EUROS/166, 8051/C500 80x86/Pentium D-81541
D-81541

Abstract: 81541 d81541
Text: bei: Siemens AG Schule für Mikroelektronik Mch B /R 0 143 d Fr. Kandlbinder Balanstrasse 73 D-81541 , Microelectronics Training Center Mch B/RO 143 d Attn Mrs Kandlbinder Balanstrasse 73 D-81541 Miinchen Tel. (089


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PDF 8051/C500 16-bit 80x86/Pentium EUROS/166, 1/C500 80x86/Pentium D-81541 81541 d81541
Not Available

Abstract: No abstract text available
Text: D-81541 München Tel. (089)4144-4701 Fax (089)4144-3817 Leistungsbeweis '94: 3000 Kurs T eilne hm , D-81541 München Tel. (089)41 44-4701 Fax (089)4144-3817 Popularity curve: 3000 course participants


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PDF WS1994/95 D-81541
Not Available

Abstract: No abstract text available
Text: Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81541 Rev. 2, 20 , . Ambient Temperature Document Number 81541 Rev. 2, 20-May-99 _ S289P VBHAV Vishay , ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81541 Rev. 2, 20 , DIN specifications Document Number 81541 Rev. 2, 20-May-99


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PDF S289P S289P 850nm. 20-May-99 S289P_
siemens dioden

Abstract: siemens datenbuch
Text: SIEMENS SIPMOSHalbleiter Leistungstransistoren und Dioden Datenbuch 1993 / 94 SIPMOS Semiconductors Power Transistors and Diodes Data Book 1993 / 94 Herausgegeben von Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, 81541 München. © Siemens AG 1993. Alle R echte Vorbehalten. G ew ähr für die Freiheit von Rechten D ritter leisten w ir nur für Bauelem ente selbst, nicht , , Balanstraße 73, 81541 München. © Siemens AG 1993. All R ights Reserved. As far as patents or other rights of


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Not Available

Abstract: No abstract text available
Text: A u sga b e 02.97 Herausgegeben von Siem ens A G , Bereich Halbleiter, MarketingK om m unikation, Betonstraße 73, 81541 München. © S ie m e n s A G 1997. A lle Rechte V o rb e h a lte n . W ichtige Hinweisel G ew ähr für die Freiheit vo n Rechten Dritter leisten w ir nur für Bauelem ente selbst, nicht für A n w e ndunge n, Ver fahren und für die in Bauelem enten oder Ba ugrup pe n realisierten Schaltungen , , 81541 Miinchen. © S ie m e n s A G 1997. All R ights Reserved. Attention please) A s far a s patents or


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smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet HBT3 SIEMENS MICROWAVE RADIO HBT30 w-band Infineon automotive semiconductor process technology x-band mmic phase
Text: P Dr. Markus Behet WS GS PM P P.O. Box 800949, 81541 Munich Tel.: +49 89 234 21143. Fax: +49 89 234 28438 e-mail: markus.behet@infineon.com 2IILFH $GGUHVV Balanstr. 73, D-81541 Munich


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PDF D-81541 smd transistor M30 siemens gaas fet m30 smd TRANSISTOR Behet HBT3 SIEMENS MICROWAVE RADIO HBT30 w-band Infineon automotive semiconductor process technology x-band mmic phase
Not Available

Abstract: No abstract text available
Text: A u sga b« 1.97 Diese A u s g a b e w u rd e mit dem Softw areS y ste m Fram eMaker® erstellt. Herausgegeben von Siem ens AG, Bereich Halbleiter, MarketingKom m unikation, Balanstraße 73, 81541 München. © S ie m e n s A G 1997. Alle Rechte Vorbehalten. W ichtige Hinweisei G ew ähr für die Freiheit vo n Rechten Dritter leisten w ir nur für Bauelem ente selbst, nicht für A nw en d u n g e n , Ver fahren und , s AG, Bereich Halbleiter, M arketingKom m unikation, Balanstrafte 73, 81541 München. © S ie m e n s


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pef 2261

Abstract: PEB 2261 SICOFI PEB 2261 N V2.0 Q67106-H6520 pef2261n pef2261 Q67100-H6522 PEB 2260-N V3.0 PEF 2261 N DuSLIC SICOFI 4uC
Text: : 30th September 2002 31st March 2003 Infineon Technologies AG, St.-Martin-Str. 53, D-81541 München


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PDF Q67106-H6520 Q67100-H6518 Q67106-H6518 Q67226-H1150 Q67100-H6519 Q67106-H6519 Q67100-H6522 Q67106-H6522 D-81541 pef 2261 PEB 2261 SICOFI PEB 2261 N V2.0 Q67106-H6520 pef2261n pef2261 PEB 2260-N V3.0 PEF 2261 N DuSLIC SICOFI 4uC
2006 - ZXHF5000

Abstract: Zetex Semiconductors D-81541 DSA0010799 Zetex 44161 37010-4
Text: ZXHF5000 ZXHF5000 4:2 ZXHF5000 (LNB) ZXHF5000 19dB 4 × 2 ZXHF5000 ZXHF5000 Zetex - 4:2 - - - - - - 200 2700MHz - - 19dB - >30dB200 2150MHz - OPI3>15dBm200 2150 MHz HF0 ZX00 5 - - 14.0V 15.5V - - 3.3V - - 1 1 Zetex © Zetex Semiconductors plc 2006 www.zetex.com ZXHF5000 Zetex GmbH Kusterman-park Balanstrabe 59 D-81541 Munchen Germany 4989 45 49 49 0 4945 49 49 0


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PDF ZXHF5000 2700MHz 30dB200 2150MHz 15dBm200 ZXHF5000 Zetex Semiconductors D-81541 DSA0010799 Zetex 44161 37010-4
Not Available

Abstract: No abstract text available
Text: Edition 01.94 This edition was realized using the software system FrameMaker®. Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, BalanstraBe 73, D-81541 Miinchen. © Siemens AG 1994. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as


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PDF D-81541
1997 - D-81541

Abstract: BGC405 BGC420 81541 siemens se
Text: Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München For


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PDF BGC405 BGC420 150pF 100nF 100pF D-81541 BGC420 81541 siemens se
Not Available

Abstract: No abstract text available
Text: , Balanstraße 73, D-81541 München 80. i ' ) Siemens AG 1994. All Rights Reserved. As far as patents or other


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1997 - a02 Transistor rf

Abstract: siemens capacitors siemens oscillator transistor transistor oscillator circuit AG TRANSISTOR
Text: Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München For questions on technology


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2003 - V23818-S5-B1

Abstract: D-81541
Text: , St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention


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PDF V23818-S5-B1 V23818-S5-B1 D-81541
2000 - infineon catalog

Abstract: SIDC10D120H6 soft solder die bonding SIDC10D120H
Text: Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved


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PDF SIDC10D120H6 Q67050-A4112A001 25caus Infineon703arts st3129 4412S, infineon catalog SIDC10D120H6 soft solder die bonding SIDC10D120H
2003 - INFINEON

Abstract: INFINEON TECHNOLOGIES V23818 V23818-S5-B2
Text: , St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention


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PDF V23818-S5-B2 INFINEON INFINEON TECHNOLOGIES V23818 V23818-S5-B2
1998 - AG TRANSISTOR

Abstract: Bipolar Junction Transistor SOT363-Package siemens power transistor amplifier siemens sot-363 transistor mobile rf power amplifier transistor bipolar transistor amplifier siemens TRANSISTOR A01
Text: , D-81541 München For questions on technology, delivery and prices please contact the Offices of


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PDF 150mV AG TRANSISTOR Bipolar Junction Transistor SOT363-Package siemens power transistor amplifier siemens sot-363 transistor mobile rf power amplifier transistor bipolar transistor amplifier siemens TRANSISTOR A01
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