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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
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D-636 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC , 636 , BC 638, BC 640 BC 636 , BC 638, BC 640 BC 636 , BC 638, BC 640 -ic = 500 mA BC 636 , BC 638, BC 640 , -92 Transistors Orientation of transistor on tape1 1 Additional marking for specials5 1 *i 06 *View on flat side


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
1998 - 222259116641

Abstract: 222259016629 bvc62 BLV589 BD139 transistor circuit diagram AN98013 c38 transistor bvc62 smd BLV859 TRANSISTOR 636
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION , transistor 1 Application Note AN98013 ABSTRACT A broadband linear amplifier design is presented , power transistor designed to operate in the 460 to 860 MHz range. With a specified output power of 20 W , outerlead as can be seen in Figs 1 and 2. 3.3 Bias circuit Each transistor has its own bias unit to


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PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 BLV589 BD139 transistor circuit diagram AN98013 c38 transistor bvc62 smd TRANSISTOR 636
E50R

Abstract: h128 transistor vegator 80X110 EX-95 1.4571 resistant E30R NSP POTENTIOMETER 1.4301 1520S
Text: . 35 4.4 VEGATOR 636 Ex signal conditioning instrument . 38 Safety information The , oscillators are available for different electrical outputs (non-contact switch, relay or transistor ). For , switch, relay, transistor or two-wire output). For product temperatures exceeding 100°C a temperature , µA max. 3 A AC, 1 A DC max. 500 VA, 54 W T - Transistor output (VIB E40 T, E50 T), VEGAVIB 41 , voltage Blocking current 10 . 55 V DC max. 0,5 W floating transistor output NPN/PNP-wiring max


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PDF D-77761 E50R h128 transistor vegator 80X110 EX-95 1.4571 resistant E30R NSP POTENTIOMETER 1.4301 1520S
Philips FA 564

Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini , general purpose transistor for wideband applications up to 2 GHz. DESCRIPTION 1 base 2 , Product specification PNP 4 GHz wideband transistor BFT93W LIMITING VALUES In accordance with , Product specification PNP 4 GHz wideband transistor M 424 LB 400 p tot (mW) BFT93W M 425


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PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564
GE-MOV

Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
Text: A3 .745 16.9 . 636 16.15 .173 4.4 .043 1.09 .079 2.0 .030 .77 .034 .86 V22ZA1 22Z1 .461 11.7 .335 8.51 .158 4.0 .038 0.98 .079 2.0 .023 .59 .027 .68 V22ZA3 V22ZA3 .745 16.9 . 636 16.15 .173 4.4 .043 , .027 .68 V24ZA4 V24ZA4 .745 18.9 . 636 16.15 .173 4.4 .043 1.09 .079 2.0 .030 .77 .034 .86 V27ZA1 27Z1 .461 11.7 .335 8.51 .158 4.0 .038 0.98 .079 2.0 .023 .59 .027 .68 V27ZA4 V27ZA4 .745 18.9 . 636 16.15 , 2.0 .023 .59 .027 .68 V33ZA5 V33ZA5 .745 18.9 . 636 16.15 .197 5.0 .054 1.36 .099 2.5 .030 .77 .034


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Ex-92

Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 Ex-89
Text: oscillators - relay output - non-contact switch - transistor output - two-wire output · all standard , of the vibrating level switch - non-contact switch (C) - relay output (R) - transistor output (T). , 537 Ex - VEGATOR 636 Ex - VEGATOR 825 Ex. If one of the stated failures is determined or in case , · · Relay output (R) · · · · · · · · Transistor output (T) · , , 1 A DC max. 125 VA, 54 W - Switching current - Breaking capacity T - Transistor output (E40


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Not Available

Abstract: No abstract text available
Text: Operating Current Low Battery Detector M AX635/ 636 /637 The MAX635/MAX636/MAX637 inverting switching , chip. The MAX635/ 636 /637 are preset for -5V, -12V, and -15V outputs, respectively. However, the , /Adjustable Output CMOS Inverting Switching Regulators MAX635/ 636 /637 ABSOLUTE MAXIMUM RATINGS Supply , NAME LX Pin D escription FUNCTION MAX635/ 636 /637 This pin drives the external Inductor with , Regulators M AX635/ 636 /637 _ D e ta ile d Description Principle o f Operation


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PDF AX635/636/637 MAX635/MAX636/MAX637 500mW MAX635/636/637to
Not Available

Abstract: No abstract text available
Text: Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W , transistor for wideband applications up to 2 GHz. PIN DESCRIPTION 1 base 2 emitter 3 , transistor BFT93W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , specification PNP 4 GHz wideband transistor 0 50 100 150 BFT93W 200 Ts (°C ) 0 10


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PDF bb53131 D3333t BFT93W OT323 BFT93W BFT93.
TRANSISTOR D 5702

Abstract: Transistor MJE 5331 OA95 transistor 1661 equivalent marking code x1 l3 sot323 FC 0137 BFT93W transistor wideband marking 545 BBS-33
Text: specification PNP 4 GHz wideband transistor BFT93W FEATURES • High power gain • Gold metallization , purpose transistor for wideband applications up to 2 GHz. DESCRIPTION Silicon PNP transistor in a , Product specification PNP 4 GHz wideband transistor BFT93W LIMITING VALUES In accordance with the , wideband transistor BFT93W 400 ML9424 Plot (mW) 300 , function of collector current, typical values. Philips Semiconductors PNP 4 GHz wideband transistor gain


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PDF BFT93W OT323 BFT93W BFT93. MBCS70 OT323. TRANSISTOR D 5702 Transistor MJE 5331 OA95 transistor 1661 equivalent marking code x1 l3 sot323 FC 0137 transistor wideband marking 545 BBS-33
1994 - UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: 1.5KE100A 4-17 1.5KE51CA 4-17 1M130ZS5 6-36 1.5KE100CA 4-17 1.5KE56A 4-17 1M150ZS5 6-36 1.5KE10A 4-17 1.5KE56CA 4-17 1M160ZS5 6-36 1.5KE10CA 4-17 1.5KE6.8A 4-17 1M180ZS5 6-36 1.5KE110A 4-17 1.5KE6.8CA 4-17 1M200ZS5 6-36 , 1M110ZS5 6-36 1N4732A 6-24 1.5KE51A 4-17 1M120ZS5 6-36 1N4733A 6-24 , ) DEVICE PAGE DEVICE PAGE MMSZ8V2T1 7-14 MZD110 6-35 MZP4743A 6-36 MMSZ9V1T1


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1994 - GHz PNP transistor

Abstract: BFT93 BFT93W TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product , Semiconductors March 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION · High power gain Silicon PNP transistor in a plastic, SOT323 , APPLICATIONS It is intended as a general purpose transistor for wideband applications up to 2 GHz. 3 1 , Product specification PNP 4 GHz wideband transistor BFT93W LIMITING VALUES In accordance with


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PDF BFT93W OT323 BFT93W BFT93. SCD28 GHz PNP transistor BFT93 TRANSISTOR D 5702 marking code X1 transistor BF 998 IC/CTC 1351 transistor pin detail
TORX1950

Abstract: TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG
Text: (°) p (nm) d (nm) 30/35 45/50 626 636 571 574 626 636 571 574 Lens , 626 636 Red transparent 50 4760 11000 613 623 Transparent 50 2720 9000 626 636 Transparent 50 2720 9000 613 623 Transparent 50 2720 8000 626 636 Transparent 50 2720 7000 630 644 Transparent 50 2720 6500 613 623 Transparent 50 1530 4800 626 636 Transparent 50 7 12


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PDF 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG
TRANSISTOR 545

Abstract: water level sensor schematic diagram TRANSISTOR 636 schematic diagram of led monitor transistor Switching Power Supply Schematic Diagram medium level power diode TRANSISTOR 077 NPN switching power transistor HIGH VOLTAGE PNP POWER TRANSISTOR
Text: transistor output minimum or maximum sensor LED status indication very small physical size NR 80 , V Housing 1 moulded housing (54.5 x 36 x 18 mm) Output 1 NPN transistor , low side switching 2 PNP transistor , high side switching Function (factory preset) MIN minimum sensor MAX maximum sensor Cable (type: LVCC, AWG 24, 3x0.2mm2) Cable 2 m standard 10 m max. (1) NR 80 - DC 6-36 V - 1 , Switch point hysteresis (depending on medium viscosity) Mass DC 6.36 V or with power supply NG


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PDF 80-DC 22-turn TRANSISTOR 545 water level sensor schematic diagram TRANSISTOR 636 schematic diagram of led monitor transistor Switching Power Supply Schematic Diagram medium level power diode TRANSISTOR 077 NPN switching power transistor HIGH VOLTAGE PNP POWER TRANSISTOR
water level sensor schematic diagram

Abstract: medium level power diode transistor "PNP Transistor" TRANSISTOR 636 Switching Power Supply Schematic Diagram 636 transistor TRANSISTOR 545 transistor 2 3 M transistor 847
Text: transistor output minimum or maximum sensor LED status indication very small physical size NR 80 , 36 V Housing 1 moulded housing (54.5 x 36 x 18 mm) Output 1 NPN transistor , low side switching 2 PNP transistor , high side switching Function (factory preset) MIN minimum sensor MAX maximum sensor Cable (type: LVCC, AWG 24, 3x0.2mm2) Cable 2 m standard 10 m max. (1) NR 80 - DC 6-36 V - 1 , Switch point hysteresis (depending on medium viscosity) Mass 2 DC 6.36 V or with power supply


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PDF LevelSensorNR80 22-turn 80-DC water level sensor schematic diagram medium level power diode transistor "PNP Transistor" TRANSISTOR 636 Switching Power Supply Schematic Diagram 636 transistor TRANSISTOR 545 transistor 2 3 M transistor 847
siemens toroidal core

Abstract: T0451S100A Siemens Ferrite B64290 MAX635 MAX635XCPA 1B253 MAX635XEPA MAX636 MAX637 B64290-K38
Text: applications. Low battery detection circuitry is included on chip. The MAX635/ 636 /637 are preset for -5V, -12V , capacitor, the current linearly decays to zero, and the magnetic field collapses. The MAX635/ 636 /637 , is not critical, a LOW BATTERY +VlN OUTPUT Figure 2. MAX635/ 636 /637 Block Diagram and Typical , conditions for power-switch transistor on time and high input voltage. [ ] Saturation - The coil must , core loss or self-res-onant frequency, are not a factor at the relatively low MAX635/ 636 /637 operating


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF siemens toroidal core T0451S100A Siemens Ferrite B64290 MAX635 MAX635XCPA 1B253 MAX635XEPA MAX636 MAX637 B64290-K38
trw 131* RF POWER TRANSISTOR

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
Text: detection circuitry is included on chip The MAX635/ 636 /637 are preset for -5V, -12V, and -15V outputs , magnetic field collapses. The MAX635/ 636 /637 controls the magnitude of the negative output voltage by , SELECT GNU -Vs lOOui ci VOUT m 1N581i 1 OmF Figure 2. MAX635/ 636 /637 Block Diagram and Typical Circuit , are avoided under worst-case high conditions for power-switch transistor on time and high input , relatively low MAX635/ 636 /637 operating frequency. Inductor Value - Low Enough? The problem that bites


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 10OpF trw 131* RF POWER TRANSISTOR MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA G414 driver circuit for MOSFET MAX626 siemens toroidal core
transistor SMD t04

Abstract: TCD1254GFG TCD2964 TCD2716DG TCD2964BFG TCD2712DG transistor SMD t05 tcd2563bfg TOTX1701 TCD1103GFG
Text: 21/2 (°) d (nm) p (nm) 626 574 626 636 571 40 636 571 30 574 Lens , Absolute Maximum DC Forward Current Rating IF (mA) @Ta = 25°C 4760 626 636 Red transparent 50 11000 613 623 Transparent 50 2720 9000 626 636 Transparent 50 2720 9000 613 623 Transparent 50 2720 8000 626 636 Transparent 50 , 1530 4800 626 636 Transparent 50 1530 4500 613 623 Transparent 50


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PDF SCE0004I TLRMHGH48T TLRMHGH48M transistor SMD t04 TCD1254GFG TCD2964 TCD2716DG TCD2964BFG TCD2712DG transistor SMD t05 tcd2563bfg TOTX1701 TCD1103GFG
diodo 1n4001

Abstract: 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset
Text: detection circuitry is included on chip. The MAX635/ 636 /637 are preset for -5V, -12V, and -15V outputs , collapses. The M AX635/ 636 /637 controls the magnitude of the negative output voitage by turning the switch , . MAX635/ 636 /63/Block Diagram and Typical Circuit (Table 2) 4-80_ xkiyjxixki This Material Copyrighted By , currents are avoided under worst-case high conditions for power-switch transistor on time and high input , relatively low MAX635/ 636 /637 operating frequency. Inductor Value - Low Enough ? The problem that bites


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 50ki2, 100pF diodo 1n4001 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset
57-3215

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent
Text: applications. Low battery detection circuitry is included on chip. The MAX635/ 636 /637 are preset for -5V, -12V , capacitor, the current linearly decays to zero, and the magnetic field collapses. The MAX635/ 636 /637 , is not critical, a LOW BATTERY +VlN OUTPUT Figure 2. MAX635/ 636 /637 Block Diagram and Typical , power-switch transistor on time and high input voltage. [ ] Saturation - The coil must deliver the correct , self-res-onant frequency, are not a factor at the relatively low MAX635/ 636 /637 operating frequency. Inductor


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF 57-3215 MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent
MAX635XCPA

Abstract: MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA
Text: applications. Low battery detection circuitry is included on chip. The MAX635/ 636 /637 are preset for -5V, -12V , capacitor, the current linearly decays to zero, and the magnetic field collapses. The MAX635/ 636 /637 , is not critical, a LOW BATTERY +VlN OUTPUT Figure 2. MAX635/ 636 /637 Block Diagram and Typical , power-switch transistor on time and high input voltage. [ ] Saturation - The coil must deliver the correct , self-res-onant frequency, are not a factor at the relatively low MAX635/ 636 /637 operating frequency. Inductor


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PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA
3055EL

Abstract: 636 MOSFET TRANSISTOR 3055E APP636 NDS9435 MTP3055EL Si9410DY Si9433DY Si9434DY Si9435DY
Text: Circuitry Protection Jan 31, 2001 APPLICATION NOTE 636 Reverse-Current Circuitry Protection , battery-reversal measure, you can add a pnp transistor as a high-side switch between the battery and the load , forward-biases the base-emitter junction. A backward-installed battery reverse-biases the transistor , and no current can flow. This arrangement is better than the series diode, because the saturated pnp transistor , . Figure 2. Because its forward drop is lower, a high-side pnp transistor (a) offers better reverse-current


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PDF 100msec com/an636 AN636, APP636, Appnote636, 3055EL 636 MOSFET TRANSISTOR 3055E APP636 NDS9435 MTP3055EL Si9410DY Si9433DY Si9434DY Si9435DY
2010 - TRANSISTOR D 5702

Abstract: BFT93 BFT93W MLB436 transistor BF 697
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product , PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version , APPLICATIONS 3 handbook, 2 columns 2 Top view It is intended as a general purpose transistor , specification PNP 4 GHz wideband transistor BFT93W LIMITING VALUES In accordance with the Absolute


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PDF BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22 TRANSISTOR D 5702 BFT93 MLB436 transistor BF 697
transistor SMD t04

Abstract: transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg
Text: ) 30 40 626 636 571 574 626 636 571 574 Lens Color Absolute Maximum DC , Wavelength 21/2 (°) d (nm) p (nm) 4760 626 636 Red transparent 613 623 Transparent 50 9000 626 636 Transparent 50 2720 9000 613 623 Transparent 50 2720 8000 626 636 Transparent 50 2720 7000 630 644 Transparent 50 2720 6500 613 623 Transparent 50 1530 4800 626 636 Transparent 50


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PDF TLRMHGH48T TLRMHGH48M ET8E99-AS transistor SMD t04 transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg
Not Available

Abstract: No abstract text available
Text: 6.36 mH R q = 25 il, I a r = 10 A vDD This transistor is an electrostatic sensitive device , TOSHIBA 2SK2889 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M OSV) 2SK2889 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3M A X Low Drain-Source ON Resistance , CIRCUIT Peak IAR — 10 A, R(J — 25 D V d d = 90V , L = 6.36 mH _ — ,j . (- .\J 2 bvd ss


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PDF 2SK2889
2010 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification , wideband transistor BFT93W FEATURES DESCRIPTION  High power gain Silicon PNP transistor , purpose transistor for wideband applications up to 2 GHz. PIN MBC870 DESCRIPTION 1 base , Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W LIMITING VALUES In , specification PNP 4 GHz wideband transistor BFT93W MLB424 400 MLB425 60 P tot (mW) h FE


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PDF BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22
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