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    PGA411QPAPRQ1 Texas Instruments Resolver-to-digital converter with integrated exciter amplifier and power supply 64-HTQFP -40 to 125 Visit Texas Instruments Buy
    DEO2V2P500M40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 200 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions
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    DAL3W3P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3W3 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Metal Brackets. Visit Amphenol Communications Solutions
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    DAO3W3P543A30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 3W3 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
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    Vishay Dale
    EB41-S0D304XF CONN EDGE DUAL FMALE 60POS 0.100
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    6AG12230BD304XB0 SIPLUS S7-1200 SB1223 2DI/2DO
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    6AG1223-0BD30-4XB0 DIGITAL I/O MODULE, 2 INPUT, 2 OUTPUT
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    Not Available

    Abstract: No abstract text available
    Text: 'DH D in 190 lG5-0088(2) VG26(V)(S)17405C 4,194, 304 x 4-Bit CMOS Dynamic RAM T /IC tw , 'o s l DH D Q 1- D Q 4 194 1G5~0088(2) VG26(V)(S)17405C 4,194, 304 x 4-Bit CMOS Dynamic , VG26(V)(S)17405C 4,194, 304 x 4-Bit CMOS Dynamic RAM viswi Description The device is CMOS Dynamic RAM organized as 4,194, 304 words x 4 bits with extended data out access mode. It is fabricated , ) lG5-0088(2) 175 VIS E É Pin Configuration VG26(V)(S)17405C 4,194, 304 x 4-Bit CMOS Dynamic


    OCR Scan     		PDF 17405C 26/24-pin 66RPC lG5-0088 300mil 17405CJ-5
    Not Available

    Abstract: No abstract text available
    Text: VG26V(S)64(5)160B 4,194, 304 x 16-Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 4,194, 304 words x 16 bits with FAST PA G E access mode. It is , VG26V(S)64(5)160B 4,194, 304 x 16-Bit CMOS Dynamic RAM Block Diagram : VG26VS65160 324 1G5-009I VG26V(S)64(5)160B 4,194, 304 x 16-Bit CMOS Dynamic RAM Preliminary VIStii Block Diagram : VG26VS64160 1G5-0091 325 Preliminary VG26V(S)64(5)160B 4,194, 304 x 16-Bit CMOS Dynamic RAM


    OCR Scan     		PDF VG26V 16-Bit 50-pin 40/50/60ns VG26VS64160B 432/396/360mW VG26VS65160B 558/504/432mW VG26V64160B cycle/64ms
    2005 - IS42S16160A

    Abstract: IS42S83200A
    Text: IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194, 304 - word x 16 , -bank x 4,194, 304 -word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK , , 304 - word x 16-bit) ® PIN CONFIGURATION (TOP VIEW) x8 Vdd DQ0 VddQ NC DQ1 VssQ NC , . D 11/01/05 IS42S83200A IS42S16160A ISSI (4-bank x 8,388,608 - word x 8-bit) (4-bank x 4,194, 304 - word x 16-bit) ® BLOCK DIAGRAM DQ0-7 I/O Buffer Memory Array Memory Array


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit.
    2005 - IS42S16160A

    Abstract: 42S83200A IS42S83200A IS42S16160A-7TL
    Text: IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194, 304 - word x 16 , -bank x 4,194, 304 -word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK , , 304 - word x 16-bit) ® PIN CONFIGURATION (TOP VIEW) x8 Vdd DQ0 VddQ NC DQ1 VssQ NC , . D 11/01/05 IS42S83200A IS42S16160A ISSI (4-bank x 8,388,608 - word x 8-bit) (4-bank x 4,194, 304 - word x 16-bit) ® BLOCK DIAGRAM DQ0-7 I/O Buffer Memory Array Memory Array


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit. 42S83200A IS42S16160A-7TL
    27C400 eprom

    Abstract: 27C400 tms27c400 K1631 27PC40
    Text: topm ant CnaraetaiMte data an* oUtar apadRcationa a n M tyM t to d u n s * wM iout node«. Te x a s , Q 7 ] D Q 14 TMS27C400 4 194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC400 4194 , Hl-Z 00H OOH DQO-OQ7 DQ0-DQ 7 D Q 8-DQ 15 DQ0-DQ7 Hl-Z Hl-Z Data In Data Out Hl-Z 97H 54H x x x x , Te x a s ^ In s t r u m e n t s POST OFFICE BOX 1*43 · HOUSTON. TEXAS 77001 TMS27C400 4194 304 , r u m e n t s POST OFFICE BOX 1*43 Te x a s · HOUSTON, TEXAS 77001 TMS27C400 4194 304


    OCR Scan     		PDF TMS27C400 304-BIT TMS27PC400 SMLS400A-OCTOBER 1992-REVISED 40-Lead 27C/PC400-10 27C/PC400-12 27C400 eprom 27C400 K1631 27PC40
    Not Available

    Abstract: No abstract text available
    Text: IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194, 304 - word x 16 , -bank x 4,194, 304 -word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK , IS42S16160A ISSI (4-bank x 8,388,608 - word x 8-bit) (4-bank x 4,194, 304 - word x 16-bit) ® PIN , Solution, Inc. — 1-800-379-4774 Rev. D 11/01/05 IS42S83200A IS42S16160A ISSI (4-bank x 8,388,608 - word x 8-bit) (4-bank x 4,194, 304 - word x 16-bit) ® BLOCK DIAGRAM DQ0-7 I/O


    Original     		PDF IS42S83200A IS42S16160A 16-bit) IS42S83200A 256Mb 608-word IS42S16160A 304-word 16-bit.
    D 304 x

    Abstract: No abstract text available
    Text: PROGRAMMABLE READ-ONLY MEMORY TMS27PC240 4194 304 -BIT PROGRAMMABLE READ-ONLY MEMORY Te x a s In s t r u m e , TMS27C240 4194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC240 4194 304 -BIT PROGRAMMABLE READ-ONLY MEMORY Wide-Word Organization . . . 256K x 16 Single 5-V Power Supply All Inputs , [ E[ DQ15[ DQ14[ DQ13[ DQ12[ DQ11 [ DQ10[ DQ9[ DQ8[ GN D *[ DQ7[ DQ6[ DQ5[ DQ4[ DQ3[ DQ2[ DQ1 [ DQ0[ G , (TOP VIEW) co -« i- in description The TMS27C240 series are 4194 304 -bit, ultraviolet-light


    OCR Scan     		PDF TMS27C240 304-BIT TMS27PC240 27C/PC240-10 27C/PC240-12 27C/PC240-15 16-Blt 400-mV D 304 x
    Not Available

    Abstract: No abstract text available
    Text: N to in «f > 2> < < < < d esc rip tio n The TMS27C240 series are 4 194 304 -bit, ultraviolet-light , Inhibit Signature Mode (Mfg) Signature Mode (Device) t X can be V|(_ or V|n * V h = 12 V i 0,5 V. r e a d , TMS27C240 4194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC240 4 194 304 -BIT PROGRAMMABLE READ-ONLY MEMORY SMLS240 - NO VEM BER 1990 Wlde-Word Organization . . . 256K x 16 Single 5 , Access/Min Cycle Time TMS27C240 J Package (Top View) Vppi 1 Ei 2 D Q 15[ 3 0Q 14[ 4 D Q 13[ 5 D Q 12


    OCR Scan     		PDF TMS27C240 304-BIT TMS27PC240 SMLS240 27C/PC240-8 27C/PC240-100 27C/PC240-120 AO-A17
    Not Available

    Abstract: No abstract text available
    Text: ote : = d o n 't c a re 162 lG 5-0087(2) VG 26(V)(S)17400C 4,194, 304 x 4-Bit CMOS Dynamic , VG 26(V)(S)17400C 4,194, 304 x 4-Bit CMOS Dynamic RAM V IS& Description T h e device is C M O , ,194, 304 x 4-Bit CMOS Dynamic RAM Pin Configuration Pin Configuration 26 /24-P IN 300mil Plastic , ^ ss 150 lG5-0087(2) VG 26(V)(S)17400C 4,194, 304 x 4-Bit CMOS Dynamic RAM Block Diagram IG5-0087(2) 151 VG26( V)(S ) 17400C 4,194, 304 x 4-Bit CMOS Dynamic RAM Truth Table


    OCR Scan     		PDF 17400C 26/24-pin 127mm) 023nuii)
    Not Available

    Abstract: No abstract text available
    Text: 4,194, 304 -word x 4-bit Dynamic RAM : Fast Page Mode with EDO NT511740C5J NT 511740C5J Data Sheet i 4,194, 304 -word x 4-bit -^ ^ - Dynamic RAM : Fast Page Mode with EDO , . 12-18 2 4,194, 304 -word x 4-bit Dynamic RAM : Fast Page Mode with EDO NT511740C5J 1. DESCRIPTION The NT511740C5J is a 4,194, 304 -word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate , . 2. FEATURES • 4,194, 304 -word x 4-bit configuration • Single 5V power supply,Â


    OCR Scan     		PDF 304-word NT511740C5J 511740C5J NT511740C5J
    2007 - CSD202010WSS

    Abstract: CSD24248SS6 CSD24168SS CSD303010SS CSD48 CP2420 CSD20166W CP4824 CSD201610SS CP2016G
    Text: 203) 36.00 x 30.00 x 8.00 (914 x 762 x 203) Stainless Steel Door Body Type Ga. Ga. 304 316L 304 , Conductive Panel Catalog Panel Size Number D x E (in.) CP1212G CP1212G CP1612G CP1612G CP1616G CP1616G , D x E (mm) G x H (in.) 259 x 259 259 x 259 361 x 259 361 x 259 361 x 361 361 x 361 462 x 361 462 x , CP4824 CP4824 Conductive Panel Catalog Panel Size Number D x E (in.) CP1612G CP1612G CP1616G CP1616G , x 14.20 18.20 x 14.20 18.20 x 18.20 18.20 x 18.20 Panel Size Mounting D x E (mm) G x H (in.) 361


    Original     		PDF E61997: CP2020G CP3024G Spec-00002 CSD202010WSS CSD24248SS6 CSD24168SS CSD303010SS CSD48 CP2420 CSD20166W CP4824 CSD201610SS CP2016G
    Not Available

    Abstract: No abstract text available
    Text: N I Ö H f 4U U U J \ 4,194, 304 -word x 4-bit Dynamic RAM : Fast Page Mode 1. DESCRIPTION The NT511740C0J is a 4,194, 304 -word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate , . 2. FEATURES • 4,194, 304 -word x 4-bit configuration • Single 5V power supply, , U U J 4,194, 304 -word x 4-bit Dynamic RAM : Fast Page Mode 5. BLOCK DIAGRAM Preliminary R evision 1.0, Nov. 1998 3 N I Ö11 f 4U U U J \ 4,194, 304 -word x 4-bit Dynamic RAM : Fast Page


    OCR Scan     		PDF 304-word NT511740C0J 26/24-pin cycles/32
    Not Available

    Abstract: No abstract text available
    Text: Vh * Vh* AO X X X X X X I/O D Q 0 - D Q 7 D Q 8 - D Q 15 HI-2 HI-2 Data In Data Out HI-2 Mfg Code , TMS27C240 4194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC240 4 194 304 , x 16 Single 5-V Power Supply All Inputs/Outputs Fully TTL Compatible Static Operations (No Clocks , [ 4 DQ13[ 5 DQ12[ 6 DQ11 [ 7 DQ10[ 8 DQ9[ 9 DQ8[ 10 G N D *[ 11 DQ7[ 12 DQ6[ 13 DQ5[ 14 DQ4[ 15 DQ3 , ] A11 32 ] A10 31 ]A 9 30 jG N D t 29 ]A 8 28 ]A 7 27 ]A 6 26 ]A 5 25 ] A4 24 ] A3 23 ]A 2 22 ]A1 21


    OCR Scan     		PDF TMS27C240 304-BIT TMS27PC240 SMLS240B-NOVEMBER 1990-REVISED 27C/PC240-10 27C/PC240-12 DQ0-DQ15
    lm 4194

    Abstract: No abstract text available
    Text: TMS27PC040 4194 304 -BIT PROGRAMMABLE READ-ONLY MEMORY S M L S 0 4 0 D - N Q V E M B E R 19 9 0 - R E V IS E D J A N U A R Y 1 9 9 3 Te x a s In s t r u m e n t s 6 -7 4 POST OFFICE BOX 1443 · HOUSTON. TEXAS 77 X 1 TMS27C040 4194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC040 4194 304 , TMS27C040 4194 304 -BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC040 4194 304 -BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO4 OD-NOVEMBER 1990-REVISED JANUARY 1993 Organization . . . 512K x 8


    OCR Scan     		PDF TMS27C040 304-BIT TMS27PC040 1990-REVISED 32-Pin 32-Lead 27C/PC040-10 27C/PC040-12 27C/PC040-15 lm 4194
    1998 - TMS664164

    Abstract: TMS664414 TMS664814
    Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4BIT/2 097 152 BY 8BIT/1 048 576 BY 16BIT BY 4BANK SYNCHRONOUS DYNAMIC RANDOMACCESS MEMORIES SMOS695A - APRIL 1998 - REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture (Single-Cycle 1 048 576 x 16 Bits x 4 Banks 2 097 152 x 8 Bits x 4 Banks 4 194 304 x 4 Bits x 4 Banks 3.3-V Power Supply (± 10% Tolerance , words with 8 bits per word D Four banks of 4 194 304 words with 4 bits per word All inputs and outputs


    Original     		PDF TMS664414, TMS664814, TMS664164 16BIT SMOS695A x8/x16 125-MHz TMS664164 TMS664414 TMS664814
    Not Available

    Abstract: No abstract text available
    Text: d 8 . O u tp u t 1 4 . + V s ­65 to 150°C n 7 .6 2 (0 .3 ) 8 2 1 .0 m a x (0 .8 2 7 , (0 .1 5 7 m in ) 1 0 % V s 0 .4 V t 0 V D u ty c y c le = T t x 1 0 0 (% ) T , CFPS- 304 , -305, -306, -307 Commercial Oscillator ISSUE 1; 28 MAY 1999 n Delivery Options n , Capability: 15pF or 10 TTL n Non tri-state (CFPS- 304 , -306) n Tri-state (CFPS-305, -307 , over 0 to 70°C (CFPS- 304 , -305, -306, -307) or ­40 to 85°C (CFPS-304I, -305I, -306I, -307I


    Original     		PDF CFPS-304, CFPS-305, 14-pin
    1998 - TMS664164

    Abstract: TMS664414 TMS664814
    Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A ­ APRIL 1998 ­ REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks 2 097 152 x 8 Bits x 4 Banks 4 194 304 x 4 Bits x 4 Banks 3.3-V Power Supply (± 10% Tolerance) Four Banks for On-Chip , Address Performance Ranges: SYNCHRONOUS CLOCK CYLE TIME ACCESS TIME CLOCK TO OUTPUT tAC2 D D


    Original     		PDF TMS664414, TMS664814, TMS664164 16-BIT SMOS695A x8/x16 125-MHz TMS664164 TMS664414 TMS664814
    1998 - TMS664164

    Abstract: TMS664414 TMS664814
    Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A ­ APRIL 1998 ­ REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks 2 097 152 x 8 Bits x 4 Banks 4 194 304 x 4 Bits x 4 Banks 3.3-V Power Supply (± 10% Tolerance) Four Banks for On-Chip , Address Performance Ranges: SYNCHRONOUS CLOCK CYLE TIME ACCESS TIME CLOCK TO OUTPUT tAC2 D D


    Original     		PDF TMS664414, TMS664814, TMS664164 16-BIT SMOS695A x8/x16 125-MHz TMS664164 TMS664414 TMS664814
    2001 - Not Available

    Abstract: No abstract text available
    Text: (V)(S)17405F 4,194, 304 x 4 - Bit CMOS Dynamic RAM DIM A A1 A2 b b1 c c1 D ZD e E E1 L R R1 , VIS Description VG26(V)(S)17405F 4,194, 304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194, 304 words x 4 bits with extended data out access mode. It is fabricated , :1G5-0187 Rev.1 Page 2 VIS VG26(V)(S)17405F 4,194, 304 x 4 - Bit CMOS Dynamic RAM Block , , 304 x 4 - Bit CMOS Dynamic RAM Notes L H L H L X X X 1 Notes: 1. EARLY WRITE only


    Original     		PDF 17405F 26/24-pin 50/60ns 1G5-0187
    E3S-CR68

    Abstract: e3l omron L-Bracket to mount E3C-VS3R E3S-RS30 E3X-NVG F3UV RSB 7900 D063 E3C-VS1G
    Text: space Hard Acrylic Reflectors Appearance Dimensions H x W x D mm 59.9 x 40.3 x 7.5 , .; E39-R2 40° with E3G-R 59.9 H x 80.8 W x 7.5 D 38 H x 22.5 W x 11 D 30° min. E39-R3 23 H x 13.7 W x 4.9 D E3T, E3S-CR, E3S-A 2° to 20° min. E39-R4 50 x 40 x 4.8 B-24 E3Z, E3JK , Accessories Hard Acrylic Reflectors (Continued) Appearance Dimensions H x W x D mm Compatible , 30° min. E39-R8 42.3 H x 30.9 W x 8 D E3Z 30° min. E39-R9 61.4 H x 51.6 W x 8 D


    Original     		PDF E39-L/E39-R/E39-S E39-L/E39-R/E39-S 20-degree E39-L153 E39-L104 E39-L43 E39-L142 L-brack173 X302-E3-01 E3S-CR68 e3l omron L-Bracket to mount E3C-VS3R E3S-RS30 E3X-NVG F3UV RSB 7900 D063 E3C-VS1G
    1998 - Not Available

    Abstract: No abstract text available
    Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture (Single-Cycle 1 048 576 x 16 Bits x 4 Banks 2 097 152 x 8 Bits x 4 Banks 4 194 304 x 4 Bits x 4 Banks 3.3-V Power Supply (± 10 , words with 8 bits per word D Four banks of 4 194 304 words with 4 bits per word All inputs and outputs


    Original     		PDF TMS664414, TMS664814, TMS664164 SMOS695A x8/x16 125-MHz
    64S20

    Abstract: No abstract text available
    Text: , - 8 L ( 4 - b a n k x 4 , i 94, 304 - w o r d x 4-b i t ) Jun- M 2 V 6 4 S 3 0 D T P - 6 , - , L , - 8 , - 8 L ( 4 - b a n k x 4 , i 94, 304 - w o r d x 4-b i t ) Iu n • M 2 V 6 4 S 3 0 , 8 L ( 4 - b a n k x 4 , i 94, 304 - w o r d x 4-b i t ) Iu n • M 2 V 6 4 S 3 0 D T P - 6 , . 1.0) M 2 V 6 4 S 2 0 D T P - 6 , - 6 L , - 7 , - 7 L , - 8 , - 8 L ( 4 - b a n k x 4 , i 94, 304 - w , 4 S 2 0 D T P - 6 , - 6 L , - 7 , - 7 L , - 8 , - 8 L ( 4 - b a n k x 4 , i 94, 304 - w o r d x 4


    OCR Scan     		PDF 152-WORD 576-WORD 16-BIT) M2V64S20DTP 304-word M2V64S30DTP M2V64S40DTP 576-word 64S20
    2001 - MAS 10 RCD

    Abstract: No abstract text available
    Text: VIS Description VG26(V)(S)17405 4,194, 304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194, 304 words x 4 bits with extended data out access mode. It is fabricated with an , ) Document:1G5-0124 Rev.1 Page 1 VIS VG26(V)(S)17405 4,194, 304 x 4 - Bit CMOS Dynamic RAM Pin , :1G5-0124 Rev.1 Page 2 VIS VG26(V)(S)17405 4,194, 304 x 4 - Bit CMOS Dynamic RAM Block , :1G5-0124 Rev.1 Page 3 VIS TRUTH TABLE FUNCTION VG26(V)(S)17405 4,194, 304 x 4 - Bit CMOS


    Original     		PDF 26/24-pin 50/60ns 127mm) 025mm) 1G5-0124 MAS 10 RCD
    1999 - NT511740C5J-60

    Abstract: NT5117405J Nanya Technology NT511740C5J NT511740C5J-50 NT511740C5J-70
    Text: NT5117405J 4,194, 304 -word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data , notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194, 304 -word X 4-bit Dynamic RAM : Fast Page Mode , notice. © NANYA TECHNOLOGY CORP NT5117405J 4,194, 304 -word X 4-bit Dynamic RAM : Fast Page Mode with EDO 1. DESCRIPTION The NT511740C5J is a 4,194, 304 -word x 4-bit dynamic RAM fabricated in NTC , /24-pin plastic SOJ. 2. FEATURES l l l l l l l l l 4,194, 304 -word x 4-bit configuration


    Original     		PDF NT5117405J 304-word 511740C5J NT511740C5J-60 NT5117405J Nanya Technology NT511740C5J NT511740C5J-50 NT511740C5J-70
    2000 - IPT02A

    Abstract: IPTG06M 10-573-20 guaina termorestringente IPTG08M Commital MIL-C-26482 m.105011 MIL-C-26482 serie 1 M.105007 A 2039
    Text: SIZE : SERVICE RATING : X C V R S 21 CONTATTI 21 CONTACTS D E G F S U , 16-26 20 I M T E W X J 20-27* 20 I S D V K D V J C U , B N X a V 24 CONTATTI 24 CONTACTS E W K R P N J D U V J , JJ PP CC n BB m R P k N M D w e x E f y KK LL DD , D r HH L Y CC FF x h ARRANGEMENT : CONTACT SIZE : SERVICE RATING


    Original     		PDF
    ...

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