The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1878EMS8#PBF Linear Technology LTC1878 - High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LTC1878EMS8#TR Linear Technology LTC1878 - High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LTC1878EMS8 Linear Technology LTC1878 - High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LTC1878EMS8#TRPBF Linear Technology LTC1878 - High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

D 1878 TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - WME-RS

Abstract: 400vac 2.5 mfd CAPACITOR E83671 capacitor 450Vac 1000MM 10000AFC D 2394 ASC Capacitors iec6025 UL-810
Text: " (43.5mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 2.110 , ) 4.921" (125.0mm) D 0.591" (15.0mm) 0.591" (15.0mm) 0.591" (15.0mm) 0.591" (15.0mm) 0.591 , ) 1.713" (43.5mm) 1.713" (43.5mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 1.878 " (47.7mm) 2.110" (53.5mm) 2.110" (53.5mm) 2.110" (53.5mm) 2.512" (63.8mm) 2.512 , ) 4.921" (125.0mm) 4.921" (125.0mm) D 0.591" (15.0mm) 0.591" (15.0mm) 0.591" (15.0mm) 0.591


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PDF 260VAC UL810, E83671 LR68148 IEC60252 400VAC 450VAC WME-RS 400vac 2.5 mfd CAPACITOR E83671 capacitor 450Vac 1000MM 10000AFC D 2394 ASC Capacitors iec6025 UL-810
D 1878 TRANSISTOR

Abstract: No abstract text available
Text: . UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 · · · · D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102 80 W at 25°C C ase , This rating is based on the capability of the transistor to operate safely in a circuit of: L » 20 mH , - INNOVATIONS r ,fj 3*115 TIP1Q5, HP106, TIP107 PNP SILICON POWER DARL1NGTONS A U G U ST 1878 - R E V IS E D M A R C H 1997 electrical characteristics at 25°C case temperature PARAM ETER


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PDF TtP105, TIP106, TIP107 TIP100, TIP101 TIP102 O-220 T1P105 TIP106 TIP105 D 1878 TRANSISTOR
BDW740

Abstract: BDW748 B0W74B D 1878 TRANSISTOR BOW74C
Text: temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate , SILICON POWER DARLINGTONS A U G U ST 1878 - REVISED M A RCH 1997 electrical characteristics at 25 , "C/W D C/W reslstive-load-switching characteristics at 25°C case temperature PAR AM ETER top , M S, d C < 2 % * Voltage and current values shown ara nominal; exact values vary slightly with transistor parameters. BDW74, BDW74A, BDW74B, BOW74C, BDW74D PNP SILICON POWER DARLINGTONS AUG UST 1978


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PDF BDW74, BDW74A, BDW74B, BOW74C, BDW74D BDW73, BDW73A, BDW73B, BDW73C BDW73D BDW740 BDW748 B0W74B D 1878 TRANSISTOR BOW74C
BOW83

Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Text: Innovations Limited. UK AUGUST 1878 - REVISED MARCH 1997 · Designed for Complementary Use with BDW84 , at the rate of 28 mW/°C. This rating fe based on the capability of the transistor to operate safely , dc < 2% * Voltage and current values shown are nominal; exact values vary slightly wilh transistor , COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT - Typical D C Currant Gain le - Collector , ._ THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T I S I d f lA B Tc - C m * Tem


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BOW83 BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Not Available

Abstract: No abstract text available
Text: Figure 1. A D 1878 /AD 1879 M o d u la to r N o ise -S hap er (One C hannel) -5 - ADI 878/AD1879 , ANALO G ANALOG ' 10 liF Figure 2. A D 1878 /AD 1879 R eco m m e n d e d In p u t S tru ctu re +5V , 10uF -L +5V . DIGITAL Figure 3. A D 1878 /AD 1879 R e co m m e n d e d P o w e r C o n d i , DIGITAL Figure 4. A D 1878 /AD 1879 R eco m m e n d e d B ypassing an d O s c illa to r C ircuits â , is sum­ marized: Figure 5. A D 1878 /AD 1879 R eco m m e n d e d G ro u n d Plane • Each


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PDF 16/18-Bit 878/AD1879* AD1879 18-bit 1878/AD -h130Â 28-Lead
transistor EM 9163

Abstract: transistor 9163
Text: -8 hermetic case or connectored TC-1 package. Description Ih. ÜB rf°ut (S e e S ectio n 5 for d e ta iled case d raw in g s.) Schematic Maximum Ratings Parameter DC Voltage Continuous RF , ) UTO-2.1 grams; UTC-21.5 grams 596IÌ-2447E 105°C/W e.,r Active Transistor Power Dissipation 126 , ¡1 4 D > S z 300 600 900 1200 1500 1800 2100 $2 0 300 600 900 1200 1500 , 19.50 19.23 18.93 18.78 18.67 18.82 - S 21 S-Parameters FREQUENCY MHz 100.00 200.00 300.00


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Transistor MP 1715

Abstract: transistor EM 9163 D 1878 TRANSISTOR
Text: T h o t m L /Ü MP A C K A R D HEWLETT Avantek Products Thin-Film Cascadable Amplifier , _ |§ " 'O U T . . (S e e S e c lio n 5 fo r d r ia i le d c a s e d ra w in g s . , +150°C +125°C Thermal Characteristics1 e>, Active Transistor Power Dissipation Junction Tem perature , Frequency, MHz Frequency, MHz P o w e r O u tp u t E C D In p u t V S W R O u tp u t V S W R , 19.41 19.61 19.81 20.01 20.08 19.97 19.77 19.50 19.23 18.93 18.78 19.67 18.82 B ias = 15.00 Volts S


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Not Available

Abstract: No abstract text available
Text: Â¥hl¡% H E W LE T T mL'nM P a c k a r d Avantek Products Thin-Film Cascadable Amplifier 2 to 1000 MHz Technical Data UTO/UTC 1011 Series Features Description Pin , ®JC Active Transistor Power Dissipation 44 mW Junction Temperature Above Case Temperature 5 , * 21 e 0 o C 5 D 5^ a Frequency, MHz 44475Ö4 00107*13 Tbfl 1-199 1000 1200 , 1.97 18.82 1.95 1.91 18.78 1.82 18.77 18.77 1.70 18.85 1.59 1.44 18.98 19.29 1.31 1.24


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1998 - U893BS

Abstract: U832BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR
Text: for mobile application. Features D U832BS divides by 2 D Very low current consumption (typically 12 mA) D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 class 2 Benefits D Extended operation time due to very low current consumption D Only three external components D Low RF input level reduces radiation problems , 1878 1680 1087 1483 1285 693 890 3458 1 10 0 ­0.2j ­5j ­0.5j ­2j 93 7812 e ­j


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PDF U832BS U832BS D-74025 02-Oct-98 U893BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR
1999 - U832BS

Abstract: D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC
Text: suitable for mobile application. Features Benefits D U832BS divides by 2 D Extended operation time due to very low current consumption D Very low current consumption (typically 12 mA) D Only three external components D Low RF input level reduces radiation problems D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 , 2667 495 2470 ­0.2j 693 2273 2075 ­5j 890 1878 1680 ­0.5j 1087 1483 1285


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PDF U832BS U832BS D-74025 07-Jun-99 D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC
1995 - TRANSISTOR B 834

Abstract: D 1878 TRANSISTOR 7812 pin out U834B 7812 MAX INPUT VOLTAGE pin diagram of three pin ic 7812 Transistor 834 ic 7848 Telefunken u 690 U834BS
Text: . D U 832 BS divides by 2 Benefits D U 834 BS divides by 4 D Extended operation time due to very low current consumption D Very low current consumption (typically 12 mA) D Only three external components D 3-GHz maximum operating frequency D Low RF input level reduces radiation problems D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 , 693 2273 2075 ­5j 890 1878 1680 ­0.5j 1087 1483 1285 ­2j 93 7812 e ­j


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PDF D-74025 TRANSISTOR B 834 D 1878 TRANSISTOR 7812 pin out U834B 7812 MAX INPUT VOLTAGE pin diagram of three pin ic 7812 Transistor 834 ic 7848 Telefunken u 690 U834BS
Not Available

Abstract: No abstract text available
Text: AVANTEK INC MME llMlTbb GODfitm 2 B A V A D UTO/UTC 2031 Series Thln-FIlm Cascadable , SPECIFICATIONS . . IPs lo D "■« i U TC — TC-1, p. 1S-42 (Measuredin a SO-ohm system @ , – — NF Pi d B - nal blocking capacitors couple the RF through the amplifier. The 2031 , (MIL-HDBK-217E, Auf @ 90°C) . . 685,900 Hrs, Active Transistor Power Dissipation , , UiUnfli ar* In ft* back of (hit Data Book. 3 -17 8 AVANTÉK INC MME llMlTt.b D D00Ã


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PDF 1S-42
1997 - U891BS

Abstract: 1878 TRANSISTOR D 1878 TRANSISTOR U891 U893BSE TRANSISTOR 7812 U832BS U834BS datasheet RS 7812 7812 ACT
Text: makes the device suitable for mobile application. D U832BS divides by 2 Benefits D U834BS divides by 4 D Extended operation time due to very low current D Very low current consumption (typically 12 mA) D Only three external components D Low RF input level reduces radiation problems consumption D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in , 5 2865 10 0 297 2667 495 2470 ­0.2j 693 2273 2075 ­5j 890 1878


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PDF U832BS U834BS U834BS U834BS) D-74025 27-Jan-97 U891BS 1878 TRANSISTOR D 1878 TRANSISTOR U891 U893BSE TRANSISTOR 7812 datasheet RS 7812 7812 ACT
Not Available

Abstract: No abstract text available
Text: MOSFET Power Transistor 175MHz,520MHz,7.2V,2W I s (A) d RD02MUS1 Vds-Ids characteristics & W , /Dec.’02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , r a d i o s e ts ABSjjLUTE MAXIMUM RATINGS (Tc=4llfg.C UNLESS OTHE SYMBOL VDSS VGSS Pin Pch , Transistor 175MHz,520MHz,7.2V,2W >TYPICALCHARACTERISTICS(175MHz) RD02MUS1 P in -P o u t characteristics


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 520MHz)
Not Available

Abstract: No abstract text available
Text: A V A N T Ë K MME IN C D B i m n b h 0 0 0 0 1 1 3 3 E 3 A V A UTO , TC-1 package. (Measured In a 50-ohm system <§> +15 V D C nominal unless otherwise noted , 1800 2000 2200 Frequency, MHz Th e r m a l MAXIMUM RATINGS D C V o lta g e . , 0 . 105”C/W Aotive Transistor Power Dissipation . 130 mW , 20.62 -20.39 19.91 19.44 19.06 18.79 18.68 18.78 19.11 19.83 UNËARIZATION RANGE: 1700 to


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NEC 41-A 002

Abstract: 8085 based traffic control system
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES · · · · Suitable for use as RF , * U66 1 to 6 Class Marking Id s s * Old specification/New specification D ocu m e n t No. P 1 0 4 1 1 EJ1VODSOO (1 si e d itio n ) (P re v io u s No. T N -1 7 5 8 ) D ale P u b lish e d A u g u , . OUTPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE V ds = 10 V f = 1 MHz c d Q. c d O "5 _C Q. Id =


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PDF 3SK135A 20bots NEC 41-A 002 8085 based traffic control system
Avantek amplifier uto 521

Abstract: No abstract text available
Text: . 105°C/W Active Transistor Power D issipation. 126 mW Junction , amplifier using resistive fe e d back and active bias for tem perature com pensation and increased , N U M E R IC A L R E A D IN G S (T y p ic a l production unit @ + 2 5 ° C a m b ie n t) B IA S , 19.23 18.93 18.78 18.67 18.82 - S -P A R A M E T E R S FREQ MHz 100.00 200.00 300.00 400.00


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2000 - HELLERMAN

Abstract: 154-42-GW24 62GB SERIES ACCESSORIES 155-42-GW24 1154-4-GW24 1155-4-GW24 157-43-G HELLERMAN BOOT MIL-C-38999 backshell STRAIGHT 62GB
Text: DIMENSIONS AFTER PLATING/MET FINISHING AL 2.315 2.315 2.190 1.878 1.878 1.753 1.565 1.440 1.315 2.315 2.315 2.190 1.878 1.878 1.823 1.565 1.510 1.385 D MAX , 55.63 47.70 47.70 46.30 39.75 38.35 35.18 D MAX TOLERANCES MM 25.55 , D MAX 1 7/16-18 UNEF 5001-22-20-90-10-AA-XX 5001-24-22-90-10-AA-XX THIRD ANGLE , 2.275 2.275 2.150 1.838 1.838 1.713 1.525 1.400 1.275 J MAX D MAX


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PDF MIL-C-26482, BS9522, F0017 MIL-C-38999 F0029, BS9520, G0001, HE308. 5001-10-d HELLERMAN 154-42-GW24 62GB SERIES ACCESSORIES 155-42-GW24 1154-4-GW24 1155-4-GW24 157-43-G HELLERMAN BOOT MIL-C-38999 backshell STRAIGHT 62GB
9494 transistor

Abstract: No abstract text available
Text: W h a t HEW LETT mÜKM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 1700 to , Medium Gain: 10.5 dB (T yp) · Low VSWR · T em perature C om pensated D escription The 2302 Series is , aracteristics1 S.« Act ive Transistor Pow er Dissipation Junction Tem perature Above Case Temperature MTBF , *·+12 V D C a n d +15 V D C 1800 2000 2200 X 1900 2100 Fre que ncy, MHz F re q u e n cy, MHz , 1.13 18.79 18.68 1.07 1.19 18.78 19.11 1.39 1.65 19.83 1 Linearization Range: 1700 to 2300 MHz


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2011 - TB-71

Abstract: No abstract text available
Text: 18.71 18.77 18.78 18.78 18.13 17.08 15.61 27.9417.96 30.4618.53 31.6818.74 31.9018.79 31.8918.87 , Outline Dimensions ( inch mm ) A .160 4.06 G .028 0.71 B .150 3.81 H .065 1.65 C .160 4.06 J .190 4.83 D


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PDF TCD-10-1W+ TCD-10-1W DB714 2002/95/EC) M119986 ED-8551 TCD-10-1W TB-71
2013 - Not Available

Abstract: No abstract text available
Text: B .150 3.81 C .160 4.06 D .050 1.27 G .028 0.71 H .065 1.65 J .190 4.83 , 10.73 22.38 22.13 19.54 16.70 13.13 18.78 18.78 18.13 17.08 15.61 31.59


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PDF TCD-10-1WX+ DB1627 10cument M133748 ED-8551 TCD-10-1
1997 - 3SK135A

Abstract: of 8404
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters · Suitable for use as RF amplifier in UHF TV tuner. 4 1 ­0.06 0.16 +0.1 +0.1 5 , SOURCE VOLTAGE | yfs | ­ Forward Transter Admittance ­ mS 25 VDS = 10 V | D ­ Drain Current ­ mA , 1.531 1.462 11 0.020 0.024 0.027 0.033 0.086 0.205 0.434 0.803 1.269 1.878 2.492


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PDF 3SK135A 3SK135A of 8404
Not Available

Abstract: No abstract text available
Text: 10.73 Frequency (MHz) PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 D , 22.13 19.54 16.70 13.13 18.78 18.78 18.13 17.08 15.61 31.59 30.97 26.04 22.79 19.73


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PDF TCD-10-1W+ M135395 ED-8551
2004 - Not Available

Abstract: No abstract text available
Text: grams. A B C D E F G H J .160 .150 .160 .050 .040 .025 .028 .065 .190 4.064 3.810 4.064 1.270 1.016 , 18.87 18.78 31.59 18.90 18.78 30.97 18.93 18.13 26.04 18.34 17.08 22.79 17.34 15.61 19.73 15.58 Back


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PDF TCD-10-1W
2012 - Not Available

Abstract: No abstract text available
Text: 19.54 16.70 13.13 In Return Loss (dB) Out Cpl 17.95 18.48 18.67 18.71 18.77 18.78 18.78 , ( inch mm ) A .160 4.06 G .028 0.71 B .150 3.81 H .065 1.65 C .160 4.06 J .190 4.83 D .050 1.27 K .030


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PDF TCD-10-1WX+ DB1627 2002/95/EC) M133748 ED-8551
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