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rs 3060 cj

Abstract: thales ITK 200-1 RS3026CL itl 12-1 rs 3026 cj thales ITL 12 itk 120-2 thales itl 15-2 itl 5-1 thales
Text: CJ 40 10 800 4.1 0.7 240 7 115 20 12 25 550 120 303 150 , 1 000 33 4.8 ITK 120-3 15 17 1 000 33 RS 3300 CJ 15 16 ITK 200-1 , 220 145 32 RS 3026 CL 40 10 800 4.1 0.7 240 7 115 20 12 15 , 0.24 65 6.3 35 21 7.2 1.5 80 1.5 235 100 1.5 6 RS 3005 CJ 85 , 218 100 1.6 RS 3010 CJ 85 6.5 530 2.25 0.535 160 6.3 66 20 7.2


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2008 - Not Available

Abstract: No abstract text available
Text: GHz RS @ 4 V () Typ. 4.8 4.1 2.8 2.2 1.4 IR @17.6 V (nA)(3) Max. 50 50 50 50 50 Contact Diam. (mils)(4 , 1.4 1.45 RS () 4.8 4.1 2.8 2.2 1.4 SPICE model parameters extracted from measured , Part Number SMV2019-000 SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 CJ @ 0 V (pF)(1) Typ. 2.3 3.1 4.5 7.1 10.8 Min. 0.68 1.13 1.58 2.48 4.28 CJ @ 4 V (pF) Max. 0.88 1.43 1.98 3.08 5.28 CJ @ 20 V (pF , RS and 1 MHz CJ . 3. VB at 10 µA specified at 22 V Min. 4. Outline drawing 149-801. Typical


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PDF SMV2019 SMV2023: SMV2020 SMV2021 SMV2022 SMV2023 APN1004.
2003 - Not Available

Abstract: No abstract text available
Text: . Electrical Specifications at 25°C Part Number SMV2019-000 SMV2020-000 SMV2021-000 SMV2022-000 SMV2023-000 CJ @ 0 V (pF)1 Typ. 2.3 3.1 4.5 7.1 10.8 Min. 0.68 1.13 1.58 2.48 4.28 CJ @ 4 V (pF) Max. 0.88 1.43 1.98 3.08 5.28 CJ @ 20 V (pF) Min. 0.13 0.23 0.32 0.48 0.78 Max. 0.23 0.33 0.44 0.68 1.08 Q @ 4V 50 MHz2 Min. 500 500 500 400 400 1 GHz RS @ 4 V () Typ. 4.8 4.1 2.8 2.2 1.4 IR @17.6 V Contact (nA)3 Diam , RS () 4.8 4.1 2.8 2.2 1.4 SPICE model parameters extracted from measured characteristics may not


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PDF SMV2019 SMV2023 SMV2020 SMV2021 SMV2022 SMV2023 APN1004. 8/01A
2001 - SMV2020-000

Abstract: SMV2019 varactor diode SMV2109 SMV2023-000 SMV2023 SMV2022-000 SMV2021-000 SMV2020 SMV2019-000
Text: 12 mils Electrical Specifications at 25°C Part Number CJ @ 0 V (pF)1 CJ @ 4 V (pF) CJ , 0.88 0.13 0.23 500 4.8 50 2.00 SMV2020-000 3.1 1.13 1.43 0.23 0.33 500 4.1 50 2.50 SMV2021-000 4.5 1.58 1.98 0.32 0.44 500 2.8 50 , at 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ . 3. VB at 10 µA specified at 22 V Min , Typical Capacitance Values VR (V) 0.0 SMV2019 SMV2020 CJ (pF) CJ (pF) 2.25 3.14 SMV2021 CJ


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PDF SMV2019 SMV2023 SMV2019 SMV2020 SMV2021 SMV2022 APN1004. 8/01A SMV2020-000 varactor diode SMV2109 SMV2023-000 SMV2023 SMV2022-000 SMV2021-000 SMV2020 SMV2019-000
2000 - EH76150

Abstract: Dual Varactor Diode with Common Cathode EH76150 die F27d x band varactor diode varactor KU BAND DH71010 varactor DH71045 DH71030
Text: versus reverse voltage follows this equation: Cj (Vr) = Cj (0 V) 1 + Vr [ Vr , Junction capacitance Cj F = 1 MHz V pF (1) DH71010 30 DH71016 30 DH71020 30 DH71030 30 , 4.8 4.9 5.0 1.0 ± 20% 1.6 ± 20% 2.0 ± 20% 3.0 ± 20% 4.5 ± 20% 6.7 ± 10% 10 ± 10% typ , f = 1 MHZ µm Fig. of merit Q VR = 4 V Test Conditions junction capacitance Cj , 3.4 3.7 4.0 4.3 4.5 4.6 4.6 4.7 4.7 4.8 4.8 Cb= 0.12 pF (3) min. M208 3.3 M208 3.7


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PDF Ct1V/Ct12V Ct1V/CT20V EH76010 EH76015 EH76022 EH76033 EH76047 EH76068 EH76100 EH76150 EH76150 Dual Varactor Diode with Common Cathode EH76150 die F27d x band varactor diode varactor KU BAND DH71010 varactor DH71045 DH71030
2003 - MGV100-20-0805-2

Abstract: c01a MGV-100-20 MGV0 MGV075-08 gaas varactor diodes MGV075-16 MGV100-21-E28 1E28 "Varactor Diodes"
Text: Electrical Specifications, TA = 25 °C IR VBR = 22 V min. CJ Tuning Ratio MAX nA MIN pF , MGV075 -12 CJ (pF) CJ (pF) ­ ­ ­ ­ ­ 1 MGV075 -13 MGV075 -14 MGV075 -15 MGV075 -16 , Electrical Specifications, TA = 25 °C IR VBR = 22 V min. CJ Tuning Ratio MAX nA MIN pF , Performance, Chips 10 10 ­ ­ ­ ­ ­ CJ (pF) CJ (pF) 1 ­ ­ ­ ­ ­ MGV100 -08 MGV100 , H20 MGV100-21-P55 100 0.69 0.78 0.87 2.0 2.8 4.1 4,000 0.1 3 0.35


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PDF MIL-PRF-19500 MIL-PRF-38534. MIL-PRF-19500 MIL-PRF-35834 MGV100-20-0805-2 c01a MGV-100-20 MGV0 MGV075-08 gaas varactor diodes MGV075-16 MGV100-21-E28 1E28 "Varactor Diodes"
2003 - Not Available

Abstract: No abstract text available
Text: 0.75±10% Chip Electrical Specifications, TA = 25 °C IR VBR = 22 V min. CJ Tuning Ratio MAX , MGV075 -12 – – – – – CJ (pF) CJ (pF) – – – – – 1 MGV075 -13 , “ = 1.00±10% Chip Electrical Specifications, TA = 25 °C IR VBR = 22 V min. CJ Tuning , F = 1 MHz Typical Performance, Chips 10 10 – – – – – CJ (pF) – – – – – CJ (pF) 1 MGV100 -08 MGV100 -09 MGV100 -20 MGV100 -21 MGV100 -22 MGV100 -23


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PDF MIL-PRF-19500 MIL-PRF-38534. MIL-PRF-19500 MIL-PRF-35834
2007 - 400 amp hrc fuse

Abstract: i2t motor protection thermal fuse 117 BUSSMANN EDISON APPLICATION OF hrc fuse thermal fuse 3.5 amps edison curve 7 MPR-20 100cj
Text: 12.7 .28 7.1 .38 9.5 2.63 67 5.75 146 4.38 111 1.63 41 1.13 28.6 .19 4.8 1.38 35 .69 17.5 .28 7.1 .38 9.5 3 76 7.13 181 5.25 133 2.13 54 1.63 41 .25 6.3 1.88 47.6 .94 24 . 41 10.3 .53 13.5 3.38 86 8 203 6 152 2.63 66 2 51 , EDISON TYPE CJ FAST ACTING FUSES 600V a.c. or less, 250V d.c. 200,000A I.R. to CSA C22-2 No. 106 , . Cross Reference EDISON - CJ , JFL BUSSMANN JKSGOULD CJ , A4JGEC C-J LITTLEFUSE JLS- Ratings, Categories


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PDF C22-2 400 amp hrc fuse i2t motor protection thermal fuse 117 BUSSMANN EDISON APPLICATION OF hrc fuse thermal fuse 3.5 amps edison curve 7 MPR-20 100cj
2002 - APN1004

Abstract: SMV2023 SMV2022-000 SMV2021-000 SMV2020-240 SMV2020-000 SMV2019-240 SMV2019-000 SMV2019 coaxial resonator, skyworks
Text: 3.5 1.4 4.8 3.3 3.6 1.3 4.1 SMV2021 4.5 3.9 1.34 2.8 SMV2022 , Number CJ @ 0 V (pF)(1) CJ @ 4 V (pF) CJ @ 20 V (pF) Q @ 4 V 50 MHz(2) 1 GHz RS @ , . Min.Typ. SMV2019-000 2.3 0.68 0.88 0.13 0.23 500 4.8 Max. 50 Nom. 2 SMV2020-000 3.1 1.13 1.43 0.23 0.33 500 4.1 50 2.5 SMV2021-000 4.5 , values specified at 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ . Hermetic Packaged


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PDF SMV2019 SMV2023: APN1004 SMV2023 SMV2022-000 SMV2021-000 SMV2020-240 SMV2020-000 SMV2019-240 SMV2019-000 coaxial resonator, skyworks
2002 - SMV2020-000

Abstract: SMV2019 SMV2023 SMV2022-000 SMV2022 SMV2021-000 SMV2021 SMV2020 SMV2019-000 SMV2023-000
Text: °C CJ @ 0 V (pF)(1) Part Number CJ @ 4 V (pF) CJ @ 20 V (pF) Q@4V 50 MHz(2) 1 GHz , . Max. Min. Typ. Max. SMV2019-000 2.3 0.68 0.88 0.13 0.23 500 4.8 50 2 SMV2020-000 3.1 1.13 1.43 0.23 0.33 500 4.1 50 2.5 SMV2021 , capacitance values specified at 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ . 12 11 10 9 8 , Typical Capacitance Values SPICE Model VR (V) SMV2019 CJ (pF) SMV2020 CJ (pF) SMV2021 CJ


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PDF SMV2019 SMV2023: SMV2020-000 SMV2023 SMV2022-000 SMV2022 SMV2021-000 SMV2021 SMV2020 SMV2019-000 SMV2023-000
2002 - Not Available

Abstract: No abstract text available
Text: 0.91 SMV2019 2.3 3.5 1.4 4.8 SMV2020 3.3 3.6 1.3 4.1 SMV2021 4.5 , 1 DATA SHEET • SMV2019–SMV2023 Electrical Specifications at 25 °C CJ @ 0 V (pF)(1) Part Number CJ @ 4 V (pF) CJ @ 20 V (pF) Q@4V 50 MHz(2) 1 GHz Ω RS @ 4 V (Ω) IR , . Typ. Max. SMV2019-000 2.3 0.68 0.88 0.13 0.23 500 4.8 50 2 SMV2020-000 3.1 1.13 1.43 0.23 0.33 500 4.1 50 2.5 SMV2021-000 4.5 1.58 1.98


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PDF SMV2019 SMV2023:
2002 - varactor

Abstract: No abstract text available
Text: -000 CJ @ 0 V (pF)(1) Typ. 2.3 3.1 4.5 7.1 10.8 Min. 0.68 1.13 1.58 2.48 4.28 CJ @ 4 V (pF) Max. 0.88 1.43 1.98 3.08 5.28 CJ @ 20 V (pF) Min. 0.13 0.23 0.32 0.48 0.78 Max. 0.23 0.33 0.44 0.68 1.08 Q@4V 50 MHz(2) Min. 500 500 500 400 400 1 GHz RS @ 4 V () Typ. 4.8 4.1 2.8 2.2 1.4 IR @17.6 V (nA)(3) Max. 50 50 50 , SMV2023 CJO (pF) 2.3 3.3 4.5 7.1 10.8 M 1.40 1.30 1.34 1.40 1.45 RS () 4.8 4.1 2.8 2.2 1.4 , 1 MHz. 2. 50 MHz Q calculated from 1 GHz RS and 1 MHz CJ . 3. VB at 10 µA specified at 22 V Min. 4


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PDF SMV2019 SMV2023: varactor
2005 - MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM MSPD1012-E50 mpn7620-et47 mbd1057 mpn7610 MMD0840 MPN7345
Text: and Beam Lead RV CJ Model TYP pF MAX pF TYP mV / mW TYP TSS MAX TYP dBm , 40 B1 0D MSS20,1 -B1 41 0D 0.06 0.08 8,000 4,000 6,000 -59 40 B1 0D , 0.15 5,000 1 ,500 2,000 -58 0.05 0.25 26 0402 MSS20,1 -0402 41 0.1 2 , Model CJ MAX pF TYP mV / mW TYP dBm Freq. TYP GHz 0.08 0.1 0 5,000 -58 , -B1 0B MSS39,1 48 -B1 0B MSS39,152-B1 0B Test Conditions Smith Chart - 50 I R = 10 A VR = 0


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PDF A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM MSPD1012-E50 mpn7620-et47 mbd1057 mpn7610 MMD0840 MPN7345
Not Available

Abstract: No abstract text available
Text: 22 42 41 40 39 38 37 ■>00 _l CO CJ V X 36 35 34 33 32 31 30 29 28 27 26 , ) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 VSS , D4 VCC VCC NC D11 D3 D10 D2 D9 D1 D8 DO OE VSS VSS 48 46 45 44 43 42 41 40 , 3.3V+10% • Package - 44 pin SOP (500mil) -4 2 pin PDIP (600mil) - 48 pin TSOP (type 1) - 44 pin , PC-12 120ns 60ns 42 pin PDIP MX23L8111TC-10 100ns 50ns 48 pin TSOP


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PDF MX23L811 100ns 500mil) 600mil) MX23L8111MC-10 MX23L8111MC-12 120ns MX23L8111 PC-10
2001 - charge amplifier

Abstract: charge amplifier x-ray H4083 S3590 pulse height analyzer 741 as buffer amplifier DATASHEET Characteristics and use of charge amplifier operational amplifier Si photodiode, united detector S3590-01
Text: ·············································································································· 4 4-1 Open-loop gain , KACCC0015EA Cj : Semiconductor detector capacitance Cf : Feedback capacitance Rf : Feedback resistance AOL : Open-loop gain of amplifier Cj Qs (e to/ -1) -t/ · e to/ Cf 3 Characteristics and use of Charge amplifier 4-1 Open-loop gain There are various semiconductor , independent of the junction capacitance Cj . This is because : Energy required to create one electron


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PDF SD-37 SE-171 KACC9001E01 charge amplifier charge amplifier x-ray H4083 S3590 pulse height analyzer 741 as buffer amplifier DATASHEET Characteristics and use of charge amplifier operational amplifier Si photodiode, united detector S3590-01
2001 - Not Available

Abstract: No abstract text available
Text: ·············································································································· 4 4-1 Open-loop gain , —‹ ○ ○ KACCC0015EA ○ ○ Cj : Semiconductor detector capacitance Cf : Feedback capacitance Rf : Feedback resistance AOL : Open-loop gain of amplifier ○ ○ ○ Cj Qs (e to/τ -1) -t/τ · e to/τ Cf 3 Characteristics and use of Charge amplifier 4-1 , from the detector is independent of the junction capacitance Cj . This is because ○ ε : Energy


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PDF SD-37 SE-171 KACC9001E01
ctk 25 4 tube

Abstract: thales ctk 15-2 THALES tube ctk 25 ctk 15 2 tube rs 3021 cj ctk 30-2 ctk 15-2 tube ctk 25 THALES tube ctk 15 ctk 15-2
Text: Air cooled CTL 5-1 20 RS 3021 CL 20 RS 3021 CJ 30 CTK 12-1/3/4 30 CTL 12-1 32 RS 2027 CL 32 RS 3027 CJ 45 CTL 15-1 45 CTK 15-1/15-2 RS 3041 CJ CTK 30-1/30-2 RS 3061 CJ 65 90 110 HIGH AMPLIFICATION FACTOR TRIODES High amplification factor , mm mm kg 2.7 4.8 CTL 3-1 60 6 1.1 0.5 130 6.3 35 150 7.2 , mm mm kg 4.8 CTK 3-1/3-3 60 6 210 1.1 0.5 130 6.3 35 150


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2003 - marking code dk

Abstract: DM marking code marking code DH DK marking code l105a
Text: Distinctive Name Marking (µH) CJ DA DD DF DG DJ DK DM EA 0R6 1R0 1R5 2R2 3R3 4R7 6R2 7R9 100 0.6 1.0 1.5 2.2 , 67 85 DC Resistance (m) typ. 8.0 10.0 16.0 24 27 35 40 52 65 Max. Current 6.0 5.4 4.3 4.1 3.9 3.1 2.9 , 14.8 20 DC Resistance (m) typ. 3.1 4.8 5.8 8.3 11 15 Max. Current 6.4 5.6 5.2 4.4 4.2 3.8 Rated Current , 6.5 6.0 5.7 5.5 5.0 C10-H5R Inductance Distinctive Name Marking (µH) CJ DA DC DF DG DJ DK DM EA , ±30 ±30 ±30 ±30 ±20 max. 3.3 4.8 6.8 9 10 14 20 22 26 DC Resistance (m) typ. 2.5 3.7 5.2 7 7.9 11 15


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PDF C10-H, C12-H C10-H3 C12-H3R C10-H5R C12-H5R 500kHZ C10-H marking code dk DM marking code marking code DH DK marking code l105a
5962-88692

Abstract: A06 smd rf smd marking A00 SMD MARKING CODE a09 qml-38534 A07 smd marking code YS SMD SMD A06 RTU A08
Text: types 01-03: Pins 1 - 8, 13, 15 - 17, 22-31, 35, 37, 41 - 48 , 52 - 57, 60-68, 70, 72, 73, 75, and 76. Device type 04: Pins 1 - 8, 13, 15 - 19, 22 - 31, 35, 37 - 39, 41 - 48 , 52 - 58, 60 - 68, 70, 72, 73, and , . 6/ Measured at the following pins: Case X: Device types 01 - 04: Pins 1 - 8, 22 - 29, 41 - 48 , and , and 41 - 48 . Case Y: Device types 01 - 03: Pins 2 - 17. SIZE A 5962-88692 STANDARDIZED MILITARY , B = idle 41 *EE2 01, 02 1, 2, 3 -25 -130 mA Negative supply current, channel B = 25 percent duty


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PDF MIL-H-38534 QML-38534. QML-38534 5962-88692 A06 smd rf smd marking A00 SMD MARKING CODE a09 A07 smd marking code YS SMD SMD A06 RTU A08
2003 - Not Available

Abstract: No abstract text available
Text: Configuration VBR CJ RS RD FCO TYP MIN TYP / MAX TYP MAX TYP V Model V pF 0.42 3 0.06 / 0.10 10 MSS40,1 41 -B10B Single Junction MSS40,1 48 , obtained with LO power of 0 dBm to +6 dBm per diode. • • • VF , R D and CJ matching options , Electrical Specifications, TA = 25 ºC VF Configuration VBR CJ RS RD FCO TYP MIN , 0.40 3 0.27 / 0.33 7 15 190 P86 MSS40,1 41 -E25 Single Junction 0.42 3


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PDF MSS40 MIL-PRF-19500 MIL-PRF-38534
2003 - MSS40

Abstract: 448-E45 b20 diode transistor p86 h20 040
Text: 0.06 / 0.10 10 MSS40,1 41 -B10B Single Junction MSS40,1 48 -B10B Single Junction 0.40 , with LO power of 0 dBm to +6 dBm per diode. · · · VF , R D and CJ matching options Chip, beam , Electrical Specifications, TA = 25 ºC VF Configuration VBR CJ RS RD FCO TYP MIN TYP , Silicon Schottky Diodes Beam Lead Electrical Specifications, TA = 25 ºC VF Configuration VBR CJ , MSS40,1 41 -E25 Single Junction 0.42 3 0.16 / 0.22 10 18 265 E25 MSS40,1 41


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PDF MSS40 MIL-PRF-19500 MIL-PRF-38534 448-E45 b20 diode transistor p86 h20 040
2614L

Abstract: 74HCT658 APO 1
Text: m ÎN T< CJ cj < CJ CD ^ These octal bus transceivers are designed for asynchronous , levels rather than 0 V or V c c ^This parameter, Cj , does not apply to I/O pons. Te x a s In s t r u m , 15 14 24 21 24 21 8 7 M AX 30 27 46 41 31 28 47 42 47 42 12 11 SN54HCT658 MIN M AX 45 41 69 62 47 , 21 32 28 17 14 M AX 47 42 63 56 48 43 64 57 42 38 SN54HCT658 MIN M AX 71 64 95 85 73 65 97 87 63 57 SN74HCT658 MIN MAX 59 53 79 71 60 54 80 72 53 48 UNIT ns ns ns ns ns *pd *pd *pd ren tt


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PDF SN54HCT658, SN54HCT659, SN74HCT658, SN74HCT659 CHCT658) CHCT659) 300-mil CT658. CT659 CT658, 2614L 74HCT658 APO 1
Not Available

Abstract: No abstract text available
Text: VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 , IZZ IZZ IZZ IZZ IZZ IZZ IZZ IZZ izz 48 47 46 45 44 43 42 41 40 39 38 37 36 , .6 V • Package - 44 pin SOP (500mil) - 48 pin TSOP (20mm x 12mm) -4 2 pin DIP (600mil) Part , 42 pin PDIP MX23L1610PC-15 150ns 42 pin PDIP MX23L1610TC-10 100ns 48 pin TSOP MX23L1610TC-11 105ns 48 pin TSOP MX23L1610TC-12 120ns 48 pin TSOP MX23L1610TC-15 150ns


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PDF 100ns 500mil) 600mil) MX23L1610MC-10 MX23L1610MC-11 105ns MX23L1610MC-12 120ns MX23L1610MC-15
PLL IC CMOS 4047

Abstract: internal circuit diagram for ic 4047
Text: 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Symbol CE CL DI D07 D06 D05 DGND DVdd D04 D03 , ] 1 7 .Ï Features · C onverts data sam pled at 32 or 48 kH z to 44.1 -kHz sampled data. · Passes , O * u tn 26 o * _i CJ a * CJ D a: < 1a 25 < 33 32 30 29 27 26 , m iM z M M CJ X _1 C J m z C D a z C D O a a > o M * C J cc _l k -H < < Q m u C J 11 LU 12 Ui CJ Top view tn C L in A lthough the D V dd and AVDD pins in this IC are given different nam


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PDF 2S5236 LC78845Q 56-QFP48E LC78845Q] 384fs 512fs QIP48E PLL IC CMOS 4047 internal circuit diagram for ic 4047
PLL IC CMOS 4047

Abstract: A0484
Text: 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Symbol CE CL DI D07 D06 , ] 1 7 .Ï Features · C onverts data sam pled at 32 or 48 kH z to 44.1 -kHz sampled data. · Passes , tn 26 o * _i CJ a * CJ D a: < 1a < 35 33 32 31 30 29 27 26 , L U m iM z M M CJ X C J m z C D a z C D O a a > o M * C J _l k -H < m u C J 11 LU 12 Ui CJ , pled at a 32 or 48 kH z sam pling frequency is converted to data w ith a 44.1 kH z sam pling frequency


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PDF 2S5236 LC78845Q 56-QFP48E LC78845Q] 384fs 512fs QIP48E PLL IC CMOS 4047 A0484
Supplyframe Tracking Pixel