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CZT122 TR Central Semiconductor Corp Avnet - $0.37 $0.32
CZT122 TR Central Semiconductor Corp Future Electronics - $0.36 $0.36

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CZT122 datasheet (5)

Part Manufacturer Description Type PDF
CZT122 Central Semiconductor BJT, NPN, Darlington Transistor, IC 5A Original PDF
CZT122 Central Semiconductor SMD Bipolar Power Transistor NPN Darlington Original PDF
CZT122 Kexin Darlington Transistors Original PDF
CZT122 TY Semiconductor TY Equivalent - Darlington Transistors - SOT-223 Original PDF
CZT122 Central Semiconductor COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Scan PDF

CZT122 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - CZT122

Abstract: CZT127 pd 223
Text: Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz ( CZT122 ) Cob VCB=10V, IE=0, f=1.0MHz (CZT127) 100 V , ) Central TM CZT122 NPN CZT127 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON


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PDF CZT122 CZT127 CZT122, OT-223 17-June OT-223 pd 223
2003 - transistor darlington npn

Abstract: DARLINGTON 30A 100V npn CZT122 CZT127 power darlington npn transistor
Text: Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed , =4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz ( CZT122 ) Cob VCB=10V, IE=0, f=1.0MHz (CZT127) V , Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR SOT


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PDF CZT122 CZT127 CZT122, OT-223 Col00V CZT122) CZT127) 500mA 26-September transistor darlington npn DARLINGTON 30A 100V npn power darlington npn transistor
2010 - Darlington 30A

Abstract: DARLINGTON 30A 100V npn CZT122 CZT127 300 W npn darlington power transistors
Text: CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0V, IC=3.0A Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz ( CZT122 ) Cob VCB=10V, IE , pF R4 (1-March 2010) CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER


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PDF CZT122 CZT127 CZT122, CZT127 OT-223 500mA CZT122) CZT127) Darlington 30A DARLINGTON 30A 100V npn 300 W npn darlington power transistors
Not Available

Abstract: No abstract text available
Text: CZT122 NPN CZT127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0V, IC=3.0A fT Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz ( CZT122 ) Cob VCB , 300 pF R4 (1-March 2010) CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER


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PDF CZT122 CZT127 CZT122, CZT127 OT-223 500mA CZT122) CZT127)
Not Available

Abstract: No abstract text available
Text: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Centrar Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , VCE=3.0V, Iq =3.0A Vq E=4.0V, Iq =3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz ( CZT122 ) VCB=10V, lE=0, f , TM Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR


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PDF CZT122 CZT127 CZT122, OT-223 CP117 CP517 26-September
Not Available

Abstract: No abstract text available
Text: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central" semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , Vc e =4.0V, lc =3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz ( CZT122 ) VCB=10V, lE=0, f=1.0MHz (CZT127) 1000 , pF C0b Cob R2 (26-September 2002) 634 Central Semiconductor Corp TM CZT122 NPN


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PDF CZT122 CZT127 CZT122, OT-223 26-September OT-223
Not Available

Abstract: No abstract text available
Text: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central DESCRIPTION: swiHconductor Corp. POWER 223 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power , stg ©JA The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington , =1,0MHz ( CZT122 ) VCB=10V, lE=0, f=1.0MHz (CZT127) MIN MAX 500 200 2.0 UNITS nA ^iA mA V V V V


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PDF CZT122 CZT127 OT-223 CZT122, 500mA CZT122) CZT127)
1997 - darlington transistor power

Abstract: IC ne ic30a
Text: NE W CZT122 NPN CZT127 PNP Central DESCRIPTION: TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER TM 223 The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. SOT-223 CASE MAXIMUM RATINGS: (TA , =3.0A, f=1.0MHz 4.0 VCB=10V, IE=0, f=1.0MHz ( CZT122 ) VCB=10V, IE=0, f=1.0MHz (CZT127) MAX 500 200 2.0 2.0


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PDF CZT122 CZT127 CZT122, OT-223 500mA CZT122) CZT127) darlington transistor power IC ne ic30a
darlington transistor sot223 5A

Abstract: No abstract text available
Text: CZT122 SOT-223 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER 1 SOT-223 Features Complementary to CZT127 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter , =0 VEB=5V,IC=0 VCE=3V,IC=0.5A CZT122 SOT-223 Transistor(NPN) Typical Characteristics TypicalCharacteristics CZT122 -


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PDF CZT122 OT-223 OT-223 CZT127 darlington transistor sot223 5A
2006 - CZT122

Abstract: CZT127 darlington transistor sot223 5A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR (NPN) 1 FEATURES Complementary to CZT127 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO , =1.0MHz 4 MHz 200 pF Typical Characteristics TypicalCharacteristics CZT122 CZT122


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PDF OT-223 CZT122 OT-223 CZT127 CZT122 CZT127 darlington transistor sot223 5A
SILICON COMPLEMENTARY transistors darlington

Abstract: CZT122 CZT127
Text: 0 CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Hi 223 SOT-223 CASE Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , =3.0V, lc=3.0A fj VqE=4.0V, lc=3.0A, f=1.0MHz cob VCB=1 ov. 'E=°.f=1 0MHz ( CZT122 ) cob VCB=10V, lE=0, f


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PDF CZT122 CZT127 OT-223 CZT122, 500mA CZT122) CZT127) SILICON COMPLEMENTARY transistors darlington
Not Available

Abstract: No abstract text available
Text: # CZT122 CZT127 Central" NPN PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122 , CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. POWER 223 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL v , ^ob C0b Vq E=4.0V, lc =3.0A, f=1.0MHz 4.0 MHz VCB=10V, lE=0, f=1.0MHz ( CZT122 ) 200


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PDF CZT122 CZT127 CZT122, CZT127 OT-223 500mA CZT122) CZT127)
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR (NPN) FEATURES Complementary to CZT127 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base


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PDF OT-223 CZT122 OT-223 CZT127
2006 - CZT122

Abstract: CZT127
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR (PNP) FEATURES 1 Complementary to CZT122 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base


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PDF OT-223 CZT127 OT-223 CZT122 -30mA -100V -12mA -20mA CZT122 CZT127
"Darlington Transistor"

Abstract: CJD122 CP230 CZT122 czt1
Text: PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag (20,000Å) Geometry GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110


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PDF CP230 CZT122 CJD122 22-August "Darlington Transistor" CJD122 CP230 CZT122 czt1
"Darlington Transistor"

Abstract: darlington transistor power CP230 CZT122 CJD122
Text: PROCESS CP230 Power Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag (20,000Å) GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel


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PDF CP230 CZT122 CJD122 "Darlington Transistor" darlington transistor power CP230 CZT122 CJD122
smd npn darlington

Abstract: CZT122 KZT122
Text: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 ( CZT122 ) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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PDF KZT122 CZT122) OT-223 smd npn darlington CZT122 KZT122
czt1

Abstract: No abstract text available
Text: IC SMD Type Product specification KZT122 ( CZT122 ) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter


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PDF KZT122 CZT122) OT-223 czt1
Not Available

Abstract: No abstract text available
Text: CZT127 SOT-223 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Complementary to CZT122 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -100 -100 -5 -5 1 150 -65-150 Units V V


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PDF CZT127 OT-223 OT-223 CZT122 -20mA -12mA -30mA -100V
CJD122

Abstract: CP230 CZT122
Text: PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag - 20,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m


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PDF CP230 CZT122 CJD122 22-March CJD122 CP230 CZT122
CJD3055

Abstract: CZT3055 darlington
Text: Power Transistore SOT-223 Case A Pow er Transistor C hip in a Sm all Signal Package! TYPE NO. NPN CZT31C CZT122 CZT3055 CZT5338 PNP CZT32C CZT127 CZT2955 DESCRIPTION POWER 223 (V) MAX 1.2 4.0 1.1 1.2 'c (A) MAX P0 (W) 2.0 2.0 2.0 2.0 bwc b o BVc e o (V) MIN 100 100 70 100 hi=£ MIN 10 1,000 20 30 @ IC (A) VCE(SAT) * lc (A) 3.0 5.0 4.0 5.0 *T (MHz) MIN 3.0 4.0 2.5 30 (V) MIN 100 100 100 100 MAX 100 . AMPL7SWITCH DARLINGTON AMPL/SWITCH H IG H C U


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PDF OT-223 CZT31C CZT122 CZT3055 CZT5338 CZT32C CZT127 CZT2955 CJD44H11 CJD45H11 CJD3055 darlington
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR (PNP) FEATURES Complementary to CZT122 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base


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PDF OT-223 CZT127 OT-223 CZT122 -30mA -100V -12mA -20mA
44H11

Abstract: A 3150 ic 3055 sot-223 45h11 IC A 3150 sod923 2955 sot223 SOT 363 darlington CXT7090L 7120
Text: Darlington NPN NPN Low VCE(SAT) CJD112 CZT122 CJD117 CZT127 Devices are listed in order


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PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 44H11 A 3150 ic 3055 sot-223 45h11 IC A 3150 sod923 2955 sot223 SOT 363 darlington CXT7090L 7120
World transistors and ic

Abstract: CZT3055 small signal bipolar transistors datasheet transistors sot-223 CZT2955 CZT2680 CZT127 CZT122 CXT3150 35mm 2 C/O
Text: CZT32C CZT122 CZT127 CZT3055 CZT2955 CZT5338 CZT3150 CZT2680 CZTA44HC Description Amplifier


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PDF OT-223 OT-89 OT-223 OT-89 World transistors and ic CZT3055 small signal bipolar transistors datasheet transistors sot-223 CZT2955 CZT2680 CZT127 CZT122 CXT3150 35mm 2 C/O
1N4007 diode SOD 80

Abstract: 1N4148 SMA 2n2222a SOT23 2N2369 SOT-23 smd 2n3055 TIP41 SOT23 2n3055 SOT-23 2n3904 smd 2N6520 sot23 SMD DIODE 1N4006
Text: CMPT3646 CJD31C CZT31C CJD32C CZT32C CJD41C CJD42C CJD47 CJD50 CJD112 CJD117 CJD122 CZT122 CJD127 CZT127


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PDF BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 2N2369 SOT-23 smd 2n3055 TIP41 SOT23 2n3055 SOT-23 2n3904 smd 2N6520 sot23 SMD DIODE 1N4006
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