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CY7C10820VC Cypress Semiconductor ComS.I.T. 445 - -
CY7C1089DV33-12BAXI Cypress Semiconductor Rochester Electronics 408 $181.00 $147.06

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CY7C108 datasheet (25)

Part Manufacturer Description Type PDF
CY7C1081DV33-12BAXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64MBIT 12NS 48FBGA Original PDF
CY7C108-25 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
CY7C108-25DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-25DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-25LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-25LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-35 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
CY7C108-35DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-35DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-35LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-35LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-45 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
CY7C108-45DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-45DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-45LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C108-45LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan PDF
CY7C1088 Cypress Semiconductor 128K x 9 Static RAM Original PDF
CY7C1088-12 Cypress Semiconductor 128K x 9 Static RAM Scan PDF
CY7C1088-12VC Cypress Semiconductor SRAM GP Single Port Original PDF
CY7C1088-15 Cypress Semiconductor 128K x 9 Static RAM Scan PDF

CY7C108 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
7C109-35

Abstract: 7C108
Text: K AD VAN CED IN F O R M A TIO N CY7C108 CY7C109 'ß Features · High speed - U* = 25 ns , E 2 H IG H , and W E LOW ). T h e CY7C108 is available in a 32-pin rectan gular leadless chip , with C E i. CE2, and OE options T h e CY7C108 and CY7C109 are high-per form ance C M O S static R A , ADVANCED INFORMATION CY7C108 CY7C109 M axim um R atings (Above which the useful life may be im , pF pF 2-4 6 r £ F CYPRESS SEMODNDUCTCR ADVANCED INFORMATION R1 4 8 0 f t CY7C108


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PDF CY7C108 CY7C109 8-00140-A 7C109-35 7C108
7C109

Abstract: CY7C109 ddgt A14C C106 cy7c109-45dmb cy7c109-35dmb
Text: Range 25 CY7C108-25DC D50 Commercial CY7C108—25LC L75 CY7C108-25DMB D50 Military CY7C108-25LMB L75 35 CY7C108-35DC D50 Commercial CY7C108-35LC L75 CY7C108—35DMB D50 Military CY7C108-35LMB L75 45 CY7C108-45DC D50 Commercial CY7C108-45LC L75 CY7C108-45DMB D50 Military CY7C108-45LMB , CYPRESS SEMICONDUCTOR 4bE D L3 ESfi^bbB CYPRESS T-Hlo'Zm PRELIMINARY 00Gb30b E3CYP CY7C108 , ■ä CYPRESS 'ß? SEMICONDUCTOR MbE D E3 250^2 D0Qb307 0 E CY7C108 PRELIMINARY CY7C109 ICYP


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PDF 00Gb30b CY7C108 CY7C109 TheCY7C108 CY7C109 p9-45DC CY7C109-45PC CY7C109-45VC CY7C109-45DMB GG0b312 7C109 ddgt A14C C106 cy7c109-35dmb
Not Available

Abstract: No abstract text available
Text: . and OE options CY7C108 CY7C109 R eading from th e device is accom plished by taking chip , CY7C108 PRELIMINARY CY7C109 c ypress SEMICONDUCTOR — Selection Guide 7C108—35 , initially and after any design or process changes that may affect these parameters. CY7C108 CY7C109 , write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum o f tnzWE and tsD- CY7C108 , . i t 11’ 121 CY7C108 CY7C109 PRELIMINARY 'Jm CYPRESS W SEMICONDUCTOR Switching


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PDF 7C108 7C109 CY7C109
Not Available

Abstract: No abstract text available
Text: PRELIMINARY CY7C108 CY7C109 CYPRESS SEMICONDUCTOR Features · H igh speed - t,vA = 25 ns · , INARY 7 C 1 0 8 -2 5 7 C 1 0 9 -25 CY7C108 CY7C109 - SEMICONDUCTOR Selection G , CYPRESS SEMICONDUCTOR PRELIM INARY CY7C108 CY7C109 AC Test Loads an d W aveforms 5V O OUTPUT O , CY7C108 CY7C109 SEMICONDUCTOR Switching Waveforms R e a d C ycle N o. l l ' 1, I21 ·rc ADDRESS , SRAMs > c ÿ CYPRESS SEMICONDUCTOR PRELIMINARY CY7C108 CY7C109 Switching Waveforms W


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PDF CY7C108 CY7C109
ED188128C

Abstract: ed188130cs ED188130CS-20 Hitachi Scans-001 ED188130C im628 ED188130LPS EDI88128C-70 EDI88128C-55 EDI88128C-35
Text: 0.8 2.2 10 0. 4/8. 0 2. 4/4. 0 12 CY7C108 /9-35 CYPRESS 0—70 35 35 15 15 25 20 0 0 0 4. 5—5. 5 160 50/40 0.8 2.2 10 0.4/8.0 2.4/4.71 12 CY7C108 /9-45 CYPRESS 0—70 45 45 20 2G 30 25 0 0 0 4


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PDF 072x8) CY7CI08/9-25 CY7C108/9-35 CY7C108/9-45 HM628128LP/FP-7SL IM628128LP/FP-8SL HI628128LP/T-10 IM628128LP/M2 HM628128LP/T-7 HM628128LP/T-8 ED188128C ed188130cs ED188130CS-20 Hitachi Scans-001 ED188130C im628 ED188130LPS EDI88128C-70 EDI88128C-55 EDI88128C-35
7C109B

Abstract: CU7C109-VC CY7C109 EME-6300H
Text: in this technology: CY7C108 , 600-mil package Other Packages to be qualified for this device


Original
PDF CY7C109 400-mil 7C109B June/1994 CY7C109-VC 7C109B CU7C109-VC CY7C109 EME-6300H
TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference TC55B465 atmel 93c57 upd23c8000 93c56v
Text: CXK541020 CY7C108 HM624100 MB82201 MT5C64K16A1 MT5C1M4B2 MT5C512K8B2 MT5C256KX16 TC551664 TC551402


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PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference TC55B465 atmel 93c57 upd23c8000 93c56v
93c46 atmel

Abstract: uPD23C4000 sony Cross Reference HN62404P Hitachi SRAM cross reference atmel 93c66 93C46L rom at29c010 eeprom Cross Reference x2864a
Text: HM624100 CY7C108 MB82201 MCM6226B CXK541020 MT5C64K16A1 ¡ MT5C1M4B2 MT5C512K8B2 TC551664


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PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 93c46 atmel uPD23C4000 sony Cross Reference HN62404P Hitachi SRAM cross reference atmel 93c66 93C46L rom at29c010 eeprom Cross Reference x2864a
EME-6300H

Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Text: bonding or metal mask options or test selections and explain: CY7C108 *, CY7C1399*, CY7C1597*, CY7C197*.


Original
PDF CY7C199 7C199C Jan/1995 MeC199 28-pin, 300-mil -1500V EME-6300H 6300H mos die CY7C1399 CY7C197 CY7C199
41C1000

Abstract: 41C464 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
Text: HM624257A/L CY7C107 CY7C106 CY7C101 CY7C108 CXK58258B MT5C1001 IDT71027 MT5C1005 IDT71028 MCM6229W


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PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
TC55B8128

Abstract: KM23C4000AG TC534000AF hitachi cross TC551632 HN62308BP m5m23c100 TC55B4256 CAT28C16A 68512U
Text: CY7C108 KM68257B/BL HM63832UH/L CY7C199 KM616513 KM611001 KM641001 KM641005 HM61100A/L HM624256A/L


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PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF hitachi cross TC551632 HN62308BP m5m23c100 TC55B4256 CAT28C16A 68512U
Not Available

Abstract: No abstract text available
Text: 100% Screened to MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024


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PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C109WC15* L7C109WC12* L7C109WC10*
1419H

Abstract: 1221H
Text: s_OOfO L7C108/109 MHMW ^«■Mi mm DEVICES INCORPORATED 128K x 8 Static RAM (Low Power) FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown™ Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns Standby: 5 mW typical □ Data Retention at 2 V for Battery Backup Operation □ DSCC SMD No. 5962-89598 □ Available 100% Screened to MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108 /109


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PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/ 62L26A, CXK581020 32-pin 1419H 1221H
a1012L

Abstract: No abstract text available
Text: -883, Class B Plug Compatible with Cypress CY7C108 /109, IDT71024 / 71B024, Micron MT5C1008, Motorola MCM6226A


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PDF L7C108/109 L7C108 L7C109 TheL7C108has reduc00 03/21/95-LDS 108/9-F a1012L
232Z2

Abstract: 109kc
Text: - " " _ ._- - jtv î;fs incorpüha i - . FEATURES 128K x 8 Static RAM with Chip Select Powerdown, Output Enable Auto-PowerdownTM Design Advanced CMOS Technology High Speed - to 15 ns maximum Low Power Operation Active: 550 mW (typical) at 25 ns Standby (typical): 5 mW (L7C108/109) 0.5 mW (L7C108-L/109-L) Data Retention at 2 V for Battery Backup Operation Available 100% Screened to MIL-STD-883, Class B Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron V1T5C1008, Motorola MCM6226A


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PDF L7C108/109) L7C108-L/109-L) MIL-STD-883, CY7C108/109, IDT71024/71B024, V1T5C1008, MCM6226A 62L26A, CXK581020 32-pin 232Z2 109kc
K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 hn623257 41464 DT71256 93C46LN HM63832
Text: IDT71027 IDT71028 MCM6229W CXK541000 KM681001 CY7C108 MT5C1008 IDT71024 MCM6226W


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PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 hn623257 41464 DT71256 93C46LN HM63832
L7C108WI15

Abstract: mt5c1008 62L26A
Text: q Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron MT5C1008, Motorola MCM6226A


Original
PDF L7C108/109 L7C109 L7C108 L7C109KC15* L7C109KC12* L7C109KC10* L7C109YM15 L7C109YM12 L7C108WI15 mt5c1008 62L26A
Not Available

Abstract: No abstract text available
Text: MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron MT5C1008


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PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 32-pin 108/9-J
Not Available

Abstract: No abstract text available
Text: MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron MT5C1008


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PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C109 L7C109KC25*
18V04

Abstract: 62L26A
Text: DEVICES INCORPORATED L7C108/109 128Kx 8 Static RAM r—-—-, I FEATURES I DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown™ Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns Standby: 5 mW typical □ Data Retention at 2 V for Battery Backup Operation □ DESC SMD No. 5962-89598 □ Available 100% Screened to MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108 /109


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PDF L7C108/109 128Kx MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 18V04 62L26A
Not Available

Abstract: No abstract text available
Text: Cypress CY7C108 /109, IDT71024/71B024, Micron MT5C1008, Motorola MCM6226A/62L26A, Sony CXK581020 â


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PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin
Not Available

Abstract: No abstract text available
Text: –¡ Plug Compatible with Cypress CY7C108 /109, IDT710 2 4 /7 1 B024, Micron MT5C1008, Motorola M CM 6226A


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PDF MIL-STD-883, CY7C108/109, IDT710 MT5C1008, 226A/62L26A, CXK581020 32-pin L7C108/109
Not Available

Abstract: No abstract text available
Text: . 5962-89598 □ Available 100% Screened to MIL-STD-883, Class B □ Plug Compatible with Cypress CY7C108


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PDF L7C108/109) 108-L/109-L) MIL-STD-883, CY7C108/109, IDT710 24/71B024, MT5C1008, 226A/62L26A, CXK581020 32-pin
1997 - L7C108WC25

Abstract: MT5C1008 l7c109wi25
Text: % Screened to MIL-STD-883, Class B q Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron


Original
PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25
1996 - CXK581020

Abstract: L7C109WC25 L7C109WI17 5962-89598 L7C108DMB25 L7C108YMB25 L7C109WI20 MT5C1008 smd transistor A6 3 smd diode K10
Text: -883, Class B q Plug Compatible with Cypress CY7C108 /109, IDT71024/71B024, Micron MT5C1008, Motorola


Original
PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin CXK581020 L7C109WC25 L7C109WI17 5962-89598 L7C108DMB25 L7C108YMB25 L7C109WI20 MT5C1008 smd transistor A6 3 smd diode K10
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