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Part Manufacturer Description Datasheet Download Buy Part
LT1351CMS8 Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LT1351CMS8#TR Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LT1351CMS8#PBF Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LT1351CS8 Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1351CMS8#TRPBF Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LT1351CS8#TR Linear Technology LT1351 - 250µA, 3MHz, 200V/µsOperational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

CTC 1351 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CTC 1351

Abstract: CTC+1351+transistor+pin+detail
Text: Logic 1 Os o u r c e Internal Clock Frequency - CSB COB, CTC CSB, COB +0.4 V V kHz , Binary, and CTC means Complementary Two’s Complement coding. See Table I for additional information , Signal Products ■17313L.5 003 1351 5=54 ■E CONNECTION DIAGRAM PIN ASSIGNMENTS PIN


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PDF ADC80MAH-12 12-Bit 12-BIT ADC80MAH-t 17313L5 CTC 1351 CTC+1351+transistor+pin+detail
sanyo ctp

Abstract: hct 4095 DIP24S LC72146 LC72146M MFP24S A03694 49228
Text: /output data interface • Power-on reset circuit • Built-in MOS transistor for a low-pass filter â , of the structure of the programmable divider. 3. With the CTC bit In the serial data set to 0 4. With the CTC bit in the serial data set to 1 5. See the description ol the serial data timing , 6 pF Pull-down transistor on resistance Rpd1 FMIN 60 200 600 kfî Rpd2 AMIN 80 200 600 ka , transistor • Connections to the n-channel MOS transistor used for the PLL active low-pass filter. • A


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PDF EN4922C 4922C LC72146, 72146M LC72146 Ife4922-21/21 sanyo ctp hct 4095 DIP24S LC72146M MFP24S A03694 49228
TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Type for 12.5-Volt Applications in VHF Communications Equipment , €¢ COLLECTOR CURRENT: Continuous.Ic 5.0 A * TRANSISTOR DISSIPATION: PT At case temperatures up , epitaxial silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device , for stabilization. The transistor is completely tested for load mismatch capability at 66 MHz with a , power vs. frequency COLLECTOR SUPPLY VOLTAGE )■12.5 V -CASE TEMPERATURE CTC )-25,C 0.1 40 100


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PDF 2N5993 88-MHz SS-jV63RJ 2N5993 TA7921 150 watt hf transistor 12 volt rca 632 rca transistor RCA rf power transistor 452 transistor 225/TA7921
RCA-40080

Abstract: RCA 40082 RCA 40582 40582 40446 RCA transistors 40081 40082 40081 40080 RCA40080
Text: . TRANSISTOR DISSIPATION: PT At case temperatures up to 25°C . At , . Secondary 3 turns No. 22 wire Va in. (6.35 mm) CTC coil form with "green dot" core 0.75—1.2 juH, Q = 100 Primary 14 turns. Secondary 2-3A turns No. 22 wire % in. (6.35 mm) CTC coil form with "green dot" core 0.75-1.2 (iH, Q = 100 11 turns No. 22 wire 'A in. (6.35 mml CTC coil form with "green dot" core 0.5—0.9 jiH, Q = 120 7 turns No. 22 wire V.I in. (6.35 mm) CTC coil form with "green dot" core 0.21-0.34 juH


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PDF to-39 27-MHz RCA-40080, 27-MHz RCA-40080 RCA 40082 RCA 40582 40582 40446 RCA transistors 40081 40082 40081 40080 RCA40080
DS-1801-01

Abstract: Lithium-Ion Battery Charger 23-6 bth 100 AIC1801 "battery protection" aic1801-a 552m AIC1801CCS AIC1801BCS AIC1801ACS
Text: GND OC OD R1 + 100 + + *CTD 4 R6 1M 3 AIC1801 * CTC 5 CS 2 M1 6 R3 4.7K R4 1M Q1 M2 R5 250K VBAT- * CTC & CTD are optional for delay time adjustment , OC TD AIC1801 1M ICC 6 + 4 IBTH 5 + CTC 1nF CTD 1nF ANALOG , VCC=VOCP-0.1 VOCP+0.1V TOC 11 22 33 mS CTC =1nF Overdischarge Delay Time (1) VCC , Overcharge Delay Time vs. Temperature 32 CTC =1nF 26 24 22 20 18 16 -20 20 Temperature (°C


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PDF AIC1801 DS-1801-01 AIC1801 AIC1801A AIC1801B AIC1801C DS-1801-01 Lithium-Ion Battery Charger 23-6 bth 100 "battery protection" aic1801-a 552m AIC1801CCS AIC1801BCS AIC1801ACS
1997 - HCTR30

Abstract: XOUTCI120 sanyo ctp DIP24S LC72146 LC72146M MFP24S EN4922C 6600k
Text: transistor for a low-pass filter · Inputs/outputs (using five general-purpose input/output ports) - , description of the structure of the programmable divider. With the CTC bit in the serial data set to 0 With the CTC bit in the serial data set to 1 See the description of the serial data timing. Electrical , cacitance Pull-down transistor on resistance Symbol Conditions min typ CIN FMIN Rpd1 , the n-channel MOS transistor used for the PLL active low-pass filter. Connections for the · A


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PDF EN4922C LC72146, 72146M LC72146 LC72146 3067-DIP24S LC72146] HCTR30 XOUTCI120 sanyo ctp DIP24S LC72146M MFP24S EN4922C 6600k
2001 - Not Available

Abstract: No abstract text available
Text: €¢ CCB input/output data interface • Power-on reset circuit • Built-in MOS transistor for a , description of the structure of the programmable divider. 4. With the CTC bit in the serial data set to 0 5. With the CTC bit in the serial data set to 1 6. See the description of the serial data timing , CIN Input cacitance Pull-down transistor on resistance FMIN Rpd1 FMIN 80 200 6 , frequencies match. • PD1 operates identically. • Connections to the n-channel MOS transistor used for


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PDF ENN4922D LC72146, 72146M, 2146V LC72146 LC72146
2001 - 72146

Abstract: sanyo ctp
Text: interface · Power-on reset circuit · Built-in MOS transistor for a low-pass filter · Inputs/outputs , programmable divider. 4. With the CTC bit in the serial data set to 0 5. With the CTC bit in the serial data , Conditions min typ CIN Input cacitance Pull-down transistor on resistance FMIN Rpd1 , identically. · Connections to the n-channel MOS transistor used for the PLL active low-pass filter , the built-in sub charge pump. transistor · See the item on the structure of the charge pump for


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PDF ENN4922D LC72146, 72146M, 2146V LC72146 LC72146 72146 sanyo ctp
B834

Abstract: BFX30 B8344 B7747 B8353 Silicon Epitaxial Planar Transistor philips
Text: EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK , Copyrighted By Its Respective Manufacturer N ANER PHILIPS/DISCRETE Silicon planar epitaxial transistor bTE D ■^53*131 00B7743 TIM I BFX30 IAPX A Ctc Collector capacitance -VCB=10V;lE = le = 0; f , Respective Manufacturer N ANER PHILIPS/DISCRETE Silicon planar epitaxial transistor bTE D ■^53131 , Respective Manufacturer N AUER PHILIPS/DISCRETE Silicon planar epitaxial transistor bTE D ■bbSBTBl


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PDF bbS3131 100mA B834 BFX30 B8344 B7747 B8353 Silicon Epitaxial Planar Transistor philips
2n3904 application

Abstract: overcharge protection circuit nimh overcharge protection circuit nimh 10 cell 9926 mosfet 9 VOLT HIGH POWER BATTERY 9926 transistor 9926 BATTERY NPN Transistor 10A 24V bth 100 2N3904
Text: 8 R1 100 C1 0.1µF 7 C2 0.1µF 6 CS CTC TC OC CTC 5 3 TD 4 , current, transistor Q1 and subsequently MOSFET M2 as well can be turned on/ off. Overcurrent , . Overcharge protection switch M2 is controlled by the `OC' pin. If `OC' is low, transistor Q1 is off and the , `OC' is high, the collector-to-emitter voltage (VCE) of transistor Q1 is low. M2 will then be turned , time (TOC) and overdischarge delay time (TOD) are set by the external capacitors CTC and CTD


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PDF AN98-BM01EN AIC1801 AIC1801 2n3904 application overcharge protection circuit nimh overcharge protection circuit nimh 10 cell 9926 mosfet 9 VOLT HIGH POWER BATTERY 9926 transistor 9926 BATTERY NPN Transistor 10A 24V bth 100 2N3904
2DI5OZ-12O

Abstract: B381 IB07
Text: Resistance ( Transistor ) 10° m !qs R|h(i-cl Ctc /W) B$ W t [sec) Transient Thermal Resistance (Diode , 2DI5OZ-12O(50A) POWER TRANSISTOR MODULE ' Features • B Biffi High Voltage • U Krt/fc , 3 A 1ms Ibp 6 A one Transistor ' Pc . 400 W two Transistors Pc ' 800 W îi "ê" DB uSa. ßt , Characteristics Items Symbols Test Conditions Min Typ Max Units m s ut Rth(j-c) Transistor 0.31 °C/W & , 7 f" > m tMi t. [as] 0.5 0.3 0. £ tt FWi-ci 0.I CTC /W] 0.05 I.O k 2.0 VEC0 [V] ¡Ã


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PDF 2DI5OZ-12O E82988 l95t/R89 Shl50 B381 IB07
2004 - Not Available

Abstract: No abstract text available
Text: 8 BATTERY 1 C1 1µF BATTERY 2 C2 1µF VCC TC 5 * CTC 6 VC TD 3 *CTD , R4 1M R5 C3 0.01µF 1M CEM9926 VBAT - * CTC & CTD are optional for delay time adjustment , + OD 3 TD VOD TC 5 AIC1802 IC VC + CTC 2 AIC1802 ELECTRICAL , ) VCC=8.6V, VC=4.3V, CTC=0µF TOC1 12 25 38 mS Overcharge Delay Time (2) VCC=8.6V, VC=4.3V, CTC=0.47µF TOC2 0.7 1.1 1.5 S Overdischarge Delay Time (1) VCC


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PDF AIC1802 AIC1802A AIC1802B AIC1802C AIC1802
2001 - MC145026

Abstract: transistor x1 Capacitor 0.01 uF ultrasonic receiver MOTOROLA mc145026p MOTOROLA MC145026 MC34074 MC145028
Text: 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VDD Dout TE RTC CTC RS A9/D9 A8/D8 A1 A2 A3 A4 A5 R1 C1 VSS , CTC TE 11 14 12 13 3­PIN OSCILLATOR AND ENABLE ÷4 DIVIDER DATA SELECT AND BUFFER 15 , Dout pin. RS, CTC , RTC (Pins 11, 12, and 13) These pins are part of the oscillator section of the , be connected to the RS input and the RTC and CTC pins should be left open. TE Transmit Enable (Pin 14 , received. The time constant R1 x C1 should be set to 1.72 encoder clock periods: R1 C1 = 3.95 RTC CTC R2/C2


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PDF MC145026 MC145027 MC34074 1N914 2N5088 MC34074 transistor x1 Capacitor 0.01 uF ultrasonic receiver MOTOROLA mc145026p MOTOROLA MC145026 MC145028
2002 - Not Available

Abstract: No abstract text available
Text: capacitor is connected between this pin and GND. Collector output of an NPN transistor with built-in pull-up , Typ. 5.0 5.0 4 10 35 1.7 10 0.08 0.3 32 5 0.15 0.3 × CTC (µF) VOUT × 60% 12 VOUT × 85% Max 5.2 V 5.5 , 160 Ambient temperature Ta (°C) Application Circuit CTC RESET 4 VIN 0.1 µF CIN 1 5 2 TRST (s) - 0.3 × CTC (µF) VOUT 100 µF COUT* TA8004SA 3 *: Capacitor COUT must be guaranteed to


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PDF TA8004SA TA8004SA O-220N
2001 - TA8004SA

Abstract: No abstract text available
Text: reset timer. A capacitor is connected between this pin and GND. Collector output of an NPN transistor , Min 4.8 4.5 29 4.5 5 Typ. 5.0 5.0 4 10 35 1.7 10 0.08 0.3 32 5 0.15 0.3 × CTC (µF) VOUT × , Circuit CTC RESET 4 VIN 0.1 µF CIN 1 5 2 TRST (s) - 0.3 × CTC (µF) VOUT 100 µF COUT


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PDF TA8004SA TA8004SA O-220N
AIC1802

Abstract: overcharge protection circuit diagram CEM9926 48v 30 a battery charger cell phone detector AIC1802-ACSTR
Text: BAT+ *R1 8 BATTERY 1 C1 1µ F BATTERY 2 C2 1µ F TC 5 TD VCC 3 * CTC , R6 1K M2 R4 1M R5 C3 0.01µF 1M CEM9926 VBAT - * CTC & CTD are optional for delay , 7 TD VC 6 4 GND VOD TC 5 3 + CTD AIC1802 IC VC + CTC 2 , mV Overcharge Delay Time (1) VCC =8.6V, VC =4.3V, CTC =0µF TOC1 12 25 38 mS Overcharge Delay Time (2) VCC =8.6V, VC =4.3V, CTC =0.47µF TOC2 0.7 1.1 1.5 S


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PDF AIC1802 AIC1802 AIC1802A AIC1802B overcharge protection circuit diagram CEM9926 48v 30 a battery charger cell phone detector AIC1802-ACSTR
2002 - TA8004

Abstract: TA8004SA
Text: is connected between this pin and GND. Collector output of an NPN transistor with built-in pull-up , 0.3 ´ CTC (mF) ¾ s TC threshold VTH TC ¾ ¾ ¾ VOUT ´ 60% ¾ V , Circuit CTC RESET TA8004SA 3 2 VOUT 100 mF 0.1 mF 1 CIN VIN TRST (s) ~ 0.3 ´ CTC (mF) - 5 COUT* 4 *: Capacitor COUT must be guaranteed to operate of the temperature


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PDF TA8004SA TA8004SA O-220N TA8004
2001 - Not Available

Abstract: No abstract text available
Text: low-pass filter - Built-in operational amplifier for FM high-speed locking - Built-in MOS transistor for , . Pulse wave with DC coupled. 3. Serial data: CTC = 0 4. Serial data: CTC = 1 5. Recomended CI value for , Nch MOS transistor . · Voltage applied to AREF pin must be 1/2 that to VDD pin. Note: Power must be , AVSS AOUT1 · PLL active low-pass filter Nch MOS transistor 24 25 AIN2 AOUT2 Transistor for low-pass filter amp · Source of the transistor is connected to AVSS pin. Note: Connect AVSS pin to ground in use


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PDF LC72151V LC72151V SSOP30
2002 - Not Available

Abstract: No abstract text available
Text: low-pass filter — Built-in operational amplifier for FM high-speed locking — Built-in MOS transistor , wave with capacitor coupled. 2. Pulse wave with DC coupled. 3. Serial data: CTC = 0 4. Serial data: CTC = 1 5. Recomended CI value for the crystal oscillator: CI ≤ 70 Ω The circuit constants for , MOS transistor . Op-amp for low-pass filter amp AVSS 15 AVDD • Op-amp for PLL active , equal to VDD. AOUT1 AREF AVSS • PLL active low-pass filter Nch MOS transistor 24 AIN2


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PDF ENN6976A LC72151V 191A-SSOP30 LC72151V]
overcharge protection circuit diagram

Abstract: CEM9926 AIC1802CCS AIC1802BCS AIC1802ACS AIC1802 overdischarge overcharge voltage detection overcharge protection circuit diagram for 5 V 48v Charger Diagram
Text: BAT+ *R1 8 BATTERY 1 C1 1µ F BATTERY 2 C2 1µ F TC 5 TD VCC 3 * CTC , R6 1K M2 R4 1M R5 C3 0.01µF 1M CEM9926 VBAT- * CTC & CTD are optional for delay , 7 TD VC 6 4 GND VOD TC 5 3 + CTD AIC1802 IC VC + CTC 2 , mV Overcharge Delay Time (1) VCC =8.6V, VC =4.3V, CTC =0µF TOC1 12 25 38 mS Overcharge Delay Time (2) VCC =8.6V, VC =4.3V, CTC =0.47µF TOC2 0.7 1.1 1.5 S


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PDF AIC1802 AIC1802 AIC1802A AIC1802B overcharge protection circuit diagram CEM9926 AIC1802CCS AIC1802BCS AIC1802ACS overdischarge overcharge voltage detection overcharge protection circuit diagram for 5 V 48v Charger Diagram
2002 - sanyo ctp

Abstract: LC72151 ic 1619 fm circuit 039ms 982MHz
Text: - Built-in operational amplifier for FM high-speed locking - Built-in MOS transistor for AM , . Serial data: CTC = 0 4. Serial data: CTC = 1 5. Recomended CI value for the crystal oscillator: CI 70 , low-pass filter Nch MOS transistor . Op-amp for low-pass filter amp AVSS 15 AVDD · Op-amp for , than or equal to VDD. AOUT1 AREF AVSS · PLL active low-pass filter Nch MOS transistor 24 AIN2 25 AOUT2 Transistor for low-pass filter amp · Source of the transistor is connected


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PDF ENN6976A LC72151V 191A-SSOP30 LC72151V] sanyo ctp LC72151 ic 1619 fm circuit 039ms 982MHz
2007 - AIC1804-XXXX

Abstract: No abstract text available
Text: 11 TI 7 TC CTC 82nF 8 FUSE BATT+ BAT1 BAT2 R5 1M R6 1M BAT3 R7 1M R4 , 2.2nF 7 TC CTC 1nF 8 VC3 GND 10 UD4 9 ICC IUD1 R1 200 C1 0.1µF VCC , = 3.5V, CTC =1nF VCELL1= 2.5V→ 2.3V Overdischarge Delay Time Overcurrent Delay Time (1) VCELL2 , Voltage (V) Overcurrent Delay Time 1 (mS) 26 CTC /CTD=1nF 24 22 20 18 16 14 , M2. The overcharge delay time is set by the external capacitor CTC . Inhibition of charging is


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PDF AIC1804 AIC1804 AIC1804-XXXX
2000 - sanyo ctp

Abstract: smoke detection using microcontroller 66758 LC72147
Text: circuit · Built-in MOS transistor for forming an active low-pass filter 5.6 Functions 1 12 , . 3. Serial data: CTC = 0 4. Serial data: CTC = 1 5. See the timing chart for serial data transfers , /D converter linearity error Err ADC0, ADC1 Pull-down transistor on resistance Rpd , I/O-1 I/O-2 I/O-3 I/O-4 I/O-5 ADI0 ADI1 IFB1 OUT1 OUT2 OUT3 OUT4 OUT5 CTP CTC , of the transistor used for low-pass filter formation. The sub-charge pump can be used in conjunction


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PDF ENN6675 LC72147V 175A-SSOP24 LC72147V] sanyo ctp smoke detection using microcontroller 66758 LC72147
2002 - Not Available

Abstract: No abstract text available
Text: €” Sub-charge pump for high-speed locking • Built-in MOS transistor for implementing an active lowpass filter , mVrms 40 900 mVrms HCTR/I-3 ( CTC = 1): f = 8 to 12 MHz 70 900 mVrms LCTR/I-4 ( CTC = 0): f = 10 to 400 kHz 40 900 mVrms VIN6-2 LCTR/I-4 ( CTC = 0): f = 400 to 500 kHz 20 900 mVrms VIN6-3 Notes: 40 HCTR/I-3 ( CTC = 0): f = 0.4 to 25 MHz VIN6 , amplitude LCTR/I-4 ( CTC = 1): f = 400 to 500 kHz 70 900 mVrms XIN, XOUT *3 4.0 8.0


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PDF ENN6974A LC72148V 3175B-SSOP24 LC72148V]
2000 - Not Available

Abstract: No abstract text available
Text: Built-in MOS transistor for forming an active low-pass filter · CCB is a trademark of SANYO ELECTRIC CO , programmable divider. 3. Serial data: CTC = 0 4. Serial data: CTC = 1 5. See the timing chart for serial data , Pull-down transistor on resistance IOFF1 IOFF2 IOFFH IOFFL CIN Err Rpd DO AOUT IFBC CE, CL, DI I/O-1 to I/O , ADI1 IFB1 OUT1 OUT2 OUT3 OUT4 OUT5 CTP CTC * * IL0 IL1 ULD UL0 UL1 XS0 XS1 XB DZ0 DZ1 TEST0 TEST1 TEST2 , output is connected internally to the gate of the transistor used for low-pass filter formation. The


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PDF ENN6675 LC72147V LC72147V LA1783/1750
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