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LT1128MJ8 Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1012AMH Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1028MH Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 75 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
RU-180-50 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 50KA
RU-180-25 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 25KA
CAR2024FP GE Critical Power CAR Series, Input: AC, Input Range: 180 - 264V, Vout: 24V, Iout: 83A, Efficiency: 91%
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Search Stock (54)

  You can filter table by choosing multiple options from dropdownShowing 54 results of 54
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
0805CS-180X Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XGE Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XGEB Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XGL Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XGLB Coilcraft Inc Farnell element14 760 £1.13 £0.35
0805CS-180XGLB Coilcraft Inc element14 Asia-Pacific 690 $0.98 $0.47
0805CS-180XGLB Coilcraft Inc element14 Asia-Pacific 690 $0.98 $0.47
0805CS-180XGLB Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XGLC Coilcraft Inc America II Electronics 5,390 - -
0805CS-180XGLC Coilcraft Inc Chip One Exchange 433 - -
0805CS-180XGLC Chip One Exchange 433 - -
0805CS-180XGLC Coilcraft Inc Coilcraft Direct 91,402 $1.00 $0.20
0805CS-180XJBC Coil Specialty Company Bristol Electronics 1,099 - -
0805CS-180XJBC Coilcraft Inc Bristol Electronics 1,000 - -
0805CS-180XJLB Coilcraft Inc Farnell element14 222 £0.94 £0.28
0805CS-180XJLB Coilcraft Inc element14 Asia-Pacific 262 $0.82 $0.39
0805CS-180XJLB Coilcraft Inc element14 Asia-Pacific 262 $0.82 $0.39
0805CS-180XKBC Unknown Bristol Electronics 1,900 - -
0805CS-180XKBC Coilcraft Inc Bristol Electronics 790 $0.75 $0.15
0805CS-180XKBC Coilcraft Inc Bristol Electronics 3,185 - -
0805CS-180XMBC Coilcraft Inc Bristol Electronics 1,650 - -
0805CS-180XMBC Coilcraft Inc Chip One Exchange 38,000 - -
0805CS180XGBC Philips Semiconductors Chip One Exchange 4,000 - -
1008CS-180-XKBC Coilcraft Inc Chip One Exchange 16,000 - -
1008CS-180X Coilcraft Inc Coilcraft Direct 10,611 $1.00 $0.22
1008CS-180XGBC Coilcraft Inc Bristol Electronics 1,502 - -
1008CS-180XGEB Coilcraft Inc Coilcraft Direct 10,611 $1.00 $0.22
1008CS-180XGEC Coilcraft Inc Coilcraft Direct 10,611 $1.00 $0.22
1008CS-180XGL Coilcraft Inc Coilcraft Direct 10,611 $1.00 $0.22
1008CS-180XGLB Coilcraft Inc element14 Asia-Pacific - $1.06 $0.51
1008CS-180XGLB Coilcraft Inc element14 Asia-Pacific - $1.06 $0.51
1008CS-180XGLB Coilcraft Inc Farnell element14 - £1.13 £0.38
1008CS-180XJBE Coilcraft Inc Bristol Electronics 4,000 $0.60 $0.09
1008CS-180XJGC Coilcraft Inc Bristol Electronics 1,570 - -
1008CS-180XJLB Coilcraft Inc element14 Asia-Pacific 66 $0.90 $0.43
1008CS-180XJLB Coilcraft Inc element14 Asia-Pacific 66 $0.90 $0.43
1008CS-180XJLB Coilcraft Inc Farnell element14 76 £0.95 £0.33
1008CS-180XJLC Coilcraft Inc Bristol Electronics 1,456 - -
1008CS-180XKBB Coilcraft Inc Bristol Electronics 200 - -
1008CS-180XKBC Coilcraft Inc Chip One Exchange 1,825 - -
1008CS-180XKBC Coilcraft Inc Bristol Electronics 5,333 - -
1008CS-180XKBC Coilcraft Inc Bristol Electronics 1,749 - -
1008CS-180XMBC Coilcraft Inc Bristol Electronics 5,121 - -
1008CS180XKBC Coilcraft Inc Bristol Electronics 3,885 - -
1206CS-180XGL Coilcraft Inc Coilcraft Direct 7,034 $1.06 $0.25
1206CS-180XGLB Coilcraft Inc Coilcraft Direct 7,034 $1.06 $0.25
1206CS-180XGLB Coilcraft Inc element14 Asia-Pacific 38 $1.18 $0.57
1206CS-180XGLB Coilcraft Inc Farnell element14 38 £0.92 £0.54
1206CS-180XGLB Coilcraft Inc element14 Asia-Pacific 38 $1.18 $0.57
1206CS-180XGLC Coilcraft Inc Coilcraft Direct 7,034 $1.06 $0.25
1206CS-180XJE Coilcraft Inc Coilcraft Direct 11,837 $0.88 $0.21
1206CS-180XJEB Coilcraft Inc Coilcraft Direct 11,837 $0.88 $0.21
1206CS-180XJLC Coilcraft Inc America II Electronics 20,000 - -
805CS-180XJBC Chip One Exchange 1,123 - -

No Results Found

CS-180-X Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - PA-PGA181-02W

Abstract: PA-SO42-S-01 PA-PGA68-01 BGA169C actel 14100 ax 6001 mp3 PA-PLCC84-02 PA-QIP90-01 PA-PGA109-01W 80386ex footprint
Text: , 4K, and 5K series FPGAs 1Mb static RAM (128K x 8) 16Mb dynamic RAM (1M x 16) COMPATIBILITY , .) (Column x Row) XxY 22X22 22X22 22X22 25X25 25X25 25X25 25X25 17X17 17X17 17X17 17X17 N/A 20 x 20 20 x 20 20 x 20 18 x 18 18 x 18 12X12 15 x 15 2.60 x2.60 2.60 x 2.60 2.61 x 2.69 2.90 x 2.90 2.90 x 2.90 1.94 x 1.70 1.94 x 1.70 1.94 x 1.70 1.94 x 1.70 2.51 x 2.40 2.51 x 2.40 2.51 x 2.40 3.13 x 2.61 2.60 x 2.60 2.60 x 2.60 1.64 x 1.33 1.50 x 1.50 0.100" Y Z


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PDF 12X12mm. FR4/G10 PA-PGA181-02W PA-SO42-S-01 PA-PGA68-01 BGA169C actel 14100 ax 6001 mp3 PA-PLCC84-02 PA-QIP90-01 PA-PGA109-01W 80386ex footprint
LINFINITY LX8383A

Abstract: UC3845BN UC3844N CS5208 EPAK uc3843an cs-3844b UC3842BN
Text: -CS-52015-1,3 -CS-5203-1 -CS-5203A- X - CS-5204- X -CS-5205- X CS-5205A-1 CS-5206- X HIGH CURRENT LDO'S r , °Cmiiv 25°C 180 °Ctyp typ 3LTO-220 SLOVAK V iN "V om =2V CS-5203 Adjust. 3A min 1 , 'Cmm 180 °C typ 25°C typ 3LTO-220 3L i^PAK CS-5204 Adjust. 3.3,5.0 4Amin l%Adj. 2% fixed , |iA (adjust.) 150°Cmin 180 °Ctyp 25°C typ 3LTO-220 3L fr'PAK CS-520SA Adjust. 5A min , .) 150°Cmin 180 °C typ 25°C typ 3L T 0220 3L t^I'AK VBTW3V CS-5207 Adjust. 3.3 7Amin 1.5


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PDF CS-8101 CS-8271 CS-5201-1 -CS-52015-1 -CS-5203-1 -CS-5203A-X CS-5204-X -CS-5205-X CS-5205A-1 CS-5206-X LINFINITY LX8383A UC3845BN UC3844N CS5208 EPAK uc3843an cs-3844b UC3842BN
2010 - M393T2863FBA-C

Abstract: serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
Text: 174 175 176 177 178 179 180 Back VSS DQ28 DQ29 VSS DM3/DQS12 NC/DQS12 VSS DQ30 DQ31 VSS CB4 CB5 VSS , be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 2 , @CL=5 CE7 405 459 90 180 225 207 180 333 648 720 945 90 1,440 800@CL6 CF7 405 459 90 180 225 207 180 333 648 720 945 90 1,440 667@CL=5 CE6 387 432 90 180 216 198 180 315 585 630 900 90 1,305 (TA=0oC, VDD , 620 585 637 610 683 1,028 1, 180 1,325 90 1,990 800@CL=6 CF7 995 1,099 570 710 705 757 730 873 1,168


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PDF M393T2863FBA M393T5663FBA M393T5660FBA M393T5160FBA 240pin M393T2863FBA-C serial presence detect samsung 2010 K4T1G084QF 800cl5 M393T5660FBA-C DDR2 DIMM
ERI - 35 - 1

Abstract: No abstract text available
Text: AM ERI CAN BRI GH T OPTOELECTRONI CS CORP. Ga p D OM I LED BL- PD x - GJS Se r ie s • Feature: 1. Surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x , of 7 AM ERI CAN BRI GH T OPTOELECTRONI CS CORP. Ga p D OM I LED BL- PD x - GJS Se r ie s â , Red, 625 nm BIN M2 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 28.5 … 71.5 , €¢ 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 GaP / 11.2 … 28.5 Yellow, 587 nm


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PDF BL-PDR-GJS-C10 ERI - 35 - 1
1991 - CYM1730

Abstract: SRAM 32k x 8
Text: 1CY M17 30 CYM1730 64K x 24 Static RAM Module Features using six 32K x 8 static RAMs in , Configuration ZIP Top View 15 WE 32K x 8 SRAM A15 32K x 8 SRAM 1 OF 2 DECODER 8 I/O16 ­ I/O23 CS 32K x 8 SRAM 32K x 8 SRAM 8 32K x 8 SRAM 32K x 8 SRAM 8 Cypress , Maximum Operating Current (mA) 510 510 510 Maximum Standby Current (mA) 180 180 180 , = 0 mA, CS < VIL Max. VCC, CS > VIH, Min. Duty Cycle = 100% 180 mA Automatic CS


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PDF CYM1730 56-pin, I/O23) CYM1730 SRAM 32k x 8
Not Available

Abstract: No abstract text available
Text: AM ERI CAN BRI GH T OPTOELECTRONI CS CORP. • Bi- Color D OM I LED Ga P BL- PM x x - GJS Se , . Small package outline (LxWxH) of 2.8 x 3.2 x 1.9 mm. 4. Qualified according to JEDEC moisture , OPTOELECTRONI CS CORP. • Bi- Color D OM I LED Ga P BL- PM x x - GJS Se r ie s Optical Characteristics , … 18.0 11.2 … 18.0 18.0 … 28.5 18.0 … 28.5 11.2 … 18.0 18.0 … 28.5 11.2 … 18.0 18.0 … 28.5 11.2 … 28.5 11.2 … 28.5 11.2 … 18.0 11.2 … 18.0 18.0 … 28.5 18.0 â


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PDF
Not Available

Abstract: No abstract text available
Text: AM ERI CAN BRI GH T OPTOELECTRONI CS CORP. Z- BEN D D OM I LED Ga p BL- PD x - GRS Se r ie s • Feature: 1. Surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x , of 6 AM ERI CAN BRI GH T OPTOELECTRONI CS CORP. • Z- BEN D D OM I LED Ga p BL- PD x - GRS , €¦ 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 11.2 … 28.5 11.2 … 14.0 14.0 … 18.0 18.0 , €¢ • 11.2 … 14.0 14.0 … 18.0 18.0 … 22.4 22.4 … 28.5 28.5 … 35.5 35.5 … 45.0


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PDF BL-PDR-GRS-C10
CYM1730

Abstract: PZ07 17305A
Text: temperature range • Small PCB footprint —1.05 sq. in. 64K x 24 Static RAM Module Functional Description , Maximum Standby Current (mA) 180 180 180 3-44 ■I ESûTbbE 0015037 17T ■This Material Copyrighted , % 180 mA ISB2 Automatic CS Power-Down Current!1! Max. Vcc, CS > Vcc - 0.2V, VIN > Vcc - 0.2V or V[N < 0.2V 180 mA Capacitance!2! Parameter Description Test Conditions Max. Unit ClN Input Capacitance Ta , resistor to V< x on the CS input is required to keep the device deselected during V^r power-up, otherwise


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PDF CYM1730 56-pin, CYM1730 CYM1730PZâ 56-Pin 38-M-00049-A PZ07 17305A
1991 - CYM1730

Abstract: No abstract text available
Text: PRELIMINARY CYM1730 64K x 24 Static RAM Module Features D D specified on the address , module organized as 64K words by 24 bits. This module is con structed using six 32K x 8 static RAMs in , - A14 Pin Configuration 15 ZIP OE Top View WE 1 VCC 32K x 8 SRAM I/O1 , 12 A1 A15 10 GND 22 GND 32K x 8 32K x 8 SRAM SRAM 24 I/O9 26 I , 32K x 8 SRAM GND I/O19 32K x 8 A15 I/O4 9 8 I/O2 7 6 I/O5 SRAM


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PDF CYM1730 CYM1730 56pin,
13005 TRANSISTOR

Abstract: mt 13004 transistor 13005 CIRCUIT TT72
Text: outline (see MIL-M-38510, appendix C) D-2 [16-Tead, 1/4" x 7/6'). dual-in-line package F-5 (16-lead, 1/4" x 3/8"), flat package / -65°C to +150°C >' -55"C to +125X^ -0.5 V de toK+13yV dc 500 mU Derate , 180 1 ns 1 1 1 1 Propagation delay low 1 to high tpLH IC. = 1ÖÖ pF, |Rl = 100 kn 1 rV[jD = sWr 1 All 1 15 1 300 ns 1 1 1 1 VDD = 10.0 V All 1 9 1 180 ns 1 1 1 Propagation delay high 1 Z to low , $ 1 180 ns 1 1 1 Propagation delay low 1 Z to high level tpZH ICL = 100 p", IRi = 10 ki2 »DD = 5.0


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PDF MIL-M-38510/476A MIL-M-38510/476 5962-K646-5) 705-040/56SO 13005 TRANSISTOR mt 13004 transistor 13005 CIRCUIT TT72
Not Available

Abstract: No abstract text available
Text: W ? CYPRESS 64K x 24 Static RAM Module Features Functional D escription â , 64K words by 24 bits. This m odule is con­ structed using six 32K x 8 static R A M s in SO J , um O perating C u rren t (mA) 510 510 510 M aximum Standby C urrent (mA) 180 180 180 3 -4 4 SSflTbbE G D 1 S 0 3 7 17T PRELIMINARY CYPRESS CYM1730 M axim um R , !1! Max. V c c , CS > lV ih , Min. D uty Cycle = 100% 180 mA ISB2 A utom atic CS Power-Down


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PDF CYM1730 56-pin, CYM1730 56-Pin 1730PZâ
Not Available

Abstract: No abstract text available
Text: CYM1730 PRELIMINARY s CYPPRÇS 3 E ' # ' SEMICONDUCTOR 64K x 24 Static RAM Module , module organized as 64K words by 24 bits. This module is con­ structed using six 32K x 8 static RAMs , Maximum Standby Current (mA) 180 180 180 Maximum Access Time (ns) 8 -4 9 VCC 1730-35 , Automatic CS Power-Down Current!1! Max. V cc, CS >. V ih , Min. Duty Cycle = 100% 180 mA ISB2 , 180 mA Io ~ 0 mA, CS < V|[ u t Capacitance!2! Test Conditions Description


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PDF CYM1730 56-pin, CYM1730 CYM1730PZâ 56-Pin
2010 - serial presence detect samsung 2010

Abstract: M392T5663FB M392T5663FBA
Text: 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 Back VSS DQ28 DQ29 VSS DM3 , the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device , conditions mA - 12 - VLP Registered DIMM datasheet 800@CL6 CF7 405 459 90 180 225 207 180 333 648 720 945 90 1,440 667@CL=5 CE6 387 432 90 180 216 198 180 315 585 630 900 90 1,305 Rev. 1.0 , 630 684 180 360 450 414 360 558 873 945 1,170 180 1,665 667@CL=5 CE6 603 648 180 360 432 396 360 531


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PDF M392T2863FBA M392T5663FBA M392T5660FBA 240pin serial presence detect samsung 2010 M392T5663FB
tu51

Abstract: No abstract text available
Text: , U2H/U2L [U] 5 3 - 5 1 - U2H — 5.2 - X - 5.2 - X - 5.2 - X - 5.2 -*— 5.1 -■* - , €” *- _ 40g d. Trise_EuS] 380 200 100 0 60 55 50 45 40 - 280 220 - 180 200 170 160 I _ . i , ] [B] EG 23 -.72 22.51 0 4.0056 0 -60.52 44.6 [fi] 40 -40 180 UÌ o ■o u o o _c a. - 180 20 30 40 50 [B] 40 -40 3.8 —n-n—'- I 1 \ 1 \l /\ s \ * i — i i i ✓ / / / \ X i i i i 180 4.2 - 180 EC] 40 180 - 180 12.4 Open loop characteristics (Typical Sample) uPD70F32I4GC - HH


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PDF uPD70F3214GC uPD70F32I4GC tu51
2011 - resolver to digital interface

Abstract: DRBG-11-AA-01AA
Text: -422 differential line drivers / receivers and operation from a single 5 volt supply are available options. 180 , Symmetry: 180 ° ±15° Quadrature: 90° ±11° Edge separation: z550ns at max. > scanning frequency (384 KHz , width ( 180 ° and 360° using NMC) Optional VEL: NMC: CLKOUT: DIR: Indicates angular velocity of input , (90°, 180 °, or 360°) Internal VCO clock output; indicates angular velocity of input signals (4 KHz , (see Figure 1). The maximum read time is given by: (12-bits read @ 2 MHz) MAX RD TIME = [600 + (12 x


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PDF DRBB-11-AA-01AA 12-bit resolver to digital interface DRBG-11-AA-01AA
2009 - HT93LC46

Abstract: No abstract text available
Text: 9 3 L C 4 6 8 S O P -B H T 9 3 L C 4 6 8 D IP -A /S O P -A /T S S O P -A Rev. 1.80 1 V , Capacitance ¾ Rev. 1.80 IOL=2.1mA 2.2~5.5V IOL=10mA 5V 2.4 ¾ ¾ V VCC-0.2 ¾ ¾ , . 1.80 K H D 0 tS K L tC D S S H V a lid D a ta tP D 1 H i- Z 3 , internal memory data can be protected. Rev. 1.80 The WRAL instruction writes data into the entire , ta r t b it D I A N 0 A 0 tH H ig h - Z D O 0 D X D 0 Z H ig h - Z


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PDF HT93LC46 40-year HT93LC46) HT93LC46
2003 - K4H1G0638B

Abstract: No abstract text available
Text: Density 512MB 1GB 1GB 2GB 512MB 1GB 1GB 2GB Organization 64M x 72 128M x 72 128M x 72 256M x 72 64M x 72 128M x 72 128M x 72 256M x 72 Preliminary DDR SDRAM Component Composition 64Mx8( K4H510838B , 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 , Feb. 2003 512MB, 1GB, 2GB Registered DIMM Preliminary DDR SDRAM 512MB, 64M x 72 ECC Module , . Rev. 0.0 Feb. 2003 512MB, 1GB, 2GB Registered DIMM Preliminary DDR SDRAM 1GB, 128M x 72 ECC


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PDF 512MB, 184pin 512Mb 200mil 72-bit M383L6523BTS-CAA/A2/B0/A0 K4H1G0638B
Not Available

Abstract: No abstract text available
Text: TEMPERATURE None: Commercial S1: Industrial screening Ground SA0~SA2 VL31B5663F - K0 S X - X , 239 VSS 30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 , ) I/O reference voltage DQ bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 VREFCA (DC) Input reference voltage CMD/ADD bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 -0.483 x VDDQ 0.5 x VDDQ +0.517 x VDDQ V 5 VTT Termination Reference Voltage Notes: 1


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PDF VL31B5663F-K0/K9/F8/E7S 256Mx72 240-PIN VL31B5663F 128Mx8 240-pin 240-pin,
Not Available

Abstract: No abstract text available
Text: screening Ground SA0~SA2 VL31B5663A - K0 S X - X Voltage Supply VSS Order Information , 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 DQ45 240 VTT A12 , bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 VREFCA (DC) Input reference voltage CMD/ADD bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 -0.483 x VDDQ 0.5 x VDDQ +0.517 x VDDQ V 5 VTT Termination Reference Voltage Notes: 1. Under all conditions VDDQ


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PDF VL31B5663A-K0/K9/F8/E7S 256Mx72 240-PIN VL31B5663A 128Mx8 240-pin 240-pin,
Not Available

Abstract: No abstract text available
Text: 256M x 72 DDR3 SDRAM VLP ECC 240-PIN UDIMM Description The VL31B5663E is a 256M x 72 DDR3 SDRAM high density UDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 , Description x 240-pin, unbuffered dual In-line memory module (UDIMM) x Supports ECC error detection and correction x Fast data transfer rates: PC3-10600, PC3-8500, PC3-6400 x VDD = VDDQ = 1.5V +/-0.075V x JEDEC standard 1.5V +/-0.075V I/O (SSTL_15 ) x VDDSPD = 3.0V to 3.6V x Eight internal component banks for


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PDF VL31B5663E-K9S/F8S/E7S 240-PIN VL31B5663E 240-pin, VN-100909
2010 - M378T5663FB3

Abstract: No abstract text available
Text: 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 Back VSS , 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 Back VSS DQ28 DQ29 VSS DM3 NC VSS DQ30 , the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected , datasheet 800@CL=5 CE7 405 459 90 180 225 207 180 333 648 720 945 90 1,440 800@CL=6 CF7 405 459 90 180 225 207 180 333 648 720 945 90 1,440 667@CL=5 CE6 387 432 90 180 216 198 180 315 585 630 900 90 1,305


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PDF M378T2863FBS M378T5663FB3 M391T2863FB3 M391T5663FB3 240pin K4T1G084QF M378T5663FB3/M391T5663FB3 128Mbx8 128Mx72
2003 - Not Available

Abstract: No abstract text available
Text: Component Composition Interface M383L1713ETS-C(L)AA/A2/B0/A0 128MB 16M x 72 16Mx8( K4H280838E) * 9EA SSTL_2 M383L3313ETS-C(L)AA/A2/B0/A0 256MB 32M x 72 16Mx8( K4H280838E) * 18EA SSTL_2 M383L3310ETS-C(L)AA/A2/B0/A0 256MB 32M x 72 32Mx4( K4H280438E) * 18EA SSTL_2 M312L1713ETS-C(L)AA/A2/B0/A0 128MB 16M x 72 16Mx8( K4H280838E) * 9EA SSTL_2 M312L3313ETS-C(L)AA/A2/B0/A0 256MB 32M x 72 16Mx8( K4H280838E) * 18EA SSTL_2 M312L3310ETS-C(L)AA/A2/B0/A0


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PDF 128MB, 256MB 184pin 128Mb 200mil 72-bit
2010 - DPDT relay 12v

Abstract: spdt relays 12v hasco cas 112 12 Volt DPDT Relay CAS112DC12 CAS-112-12 spdt relay 12v 9 Volt DPDT Relay cs212dc5 CS-212-48
Text: 18.0 1.2 37.6 CAS-112-48 48 4300 11.1 36.0 2.4 74.2 Coil Resist. (Ohms , 3.8 0.4 15.0 0.15 CS-212-6 6 240 25.0 4.5 0.48 18.0 0.15 CS , 18.0 1.92 70.1 0.15 CS-212-48 48 7680 6.5 36.0 3.84 76.8 0.30 CS , (10 - 55 Hz) -25°C ~ +75°C -25°C ~ +85°C Temperature Life Mechanical Life 2 x 106 times CAS, CS CS CAS, CS 2 x 107 times Electrical Life at 500 VAC, 25°C, 50% relative humidity


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PDF E75887 LR49291 CAS112DC5 CS212DC6 CAS112DC6 CS212DC9 CAS112DC9 CS212DC12 CAS112DC12 CS212DC24 DPDT relay 12v spdt relays 12v hasco cas 112 12 Volt DPDT Relay CAS112DC12 CAS-112-12 spdt relay 12v 9 Volt DPDT Relay cs212dc5 CS-212-48
240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600
Text: 256M x 72 DDR3 SDRAM VLP ECC 240-PIN UDIMM Description The VL31B5663E is a 256M x 72 DDR3 SDRAM high density UDIMM. This memory module consists of eighteen CMOS 128M x 8 bits with 8 banks DDR3 , Description x 240-pin, unbuffered dual In-line memory module (UDIMM) x Supports ECC error detection and correction x Fast data transfer rates: PC3-10600, PC3-8500, PC3-6400 x VDD = VDDQ = 1.5V +/-0.075V x JEDEC standard 1.5V +/-0.075V I/O (SSTL_15 ) x VDDSPD = 3.0V to 3.6V x Eight internal component banks for


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PDF VL31B5663E-K9S/F8S/E7S 240-PIN VL31B5663E 240-pin, VN-100909 DDR3-1066 DDR3-1333 PC3-10600
240-PIN

Abstract: DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K9 samsung 240-pin u-dimm socket
Text: TEMPERATURE None: Commercial S1: Industrial screening Ground SA0~SA2 VL31B5663F - K0 S X - X , 239 VSS 30 DQ24 60 VDD 90 DQ40 120 VTT 150 DQ29 180 A3 210 , ) I/O reference voltage DQ bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 VREFCA (DC) Input reference voltage CMD/ADD bus 0.49 x VDD 0.5 x VDD 0.51 x VDD V 3,4 -0.483 x VDDQ 0.5 x VDDQ +0.517 x VDDQ V 5 VTT Termination Reference Voltage Notes: 1


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PDF VL31B5663F-K0/K9/F8/E7S 256Mx72 240-PIN VL31B5663F 128Mx8 240-pin 240-pin, DDR3-1066 DDR3-1333 PC3-10600 PC3-12800 K9 samsung 240-pin u-dimm socket
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