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CRS3/60 datasheet (2)

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40af

Abstract: Thyristors BRX47 BRY44 BRY42 50AF thyristors itt CRS3/40AF Thyristors BRX45 CRS3-40AF BRX44
Text: ITT Semiconductors Thyristors Thyristors 300mA—BRX Range REFERENCE TABLE Outline Vrrm Vdrm VFGM I t { a v ) (Tj-55'C) Stock Drawing Code (V) (V) (V) (mA) (A) No. No BRX44 30 30 5 300 3 32913X BRX45 60 60 5 300 3 32914H I 73 BRX46 100 100 5 300 3 32915 F 1 BRX47 200 200 5 300 3 32916D Thyristorsl Amp—BRY Range The BRY42, BRY43 and BRY44 are 1 amp thyristors designed for consumer applications. They are robustly constructed in a low line tab package suitable for mounting to a


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PDF 300mAâ Tj-55 BRX44 32913X BRX45 32914H BRX46 BRX47 32916D BRY42, 40af Thyristors BRX47 BRY44 BRY42 50AF thyristors itt CRS3/40AF Thyristors BRX45 CRS3-40AF
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF H8/38602R H8/38602R REJ06B0511-0100/Rev
ttl7404

Abstract: OP404 U1056 193 ec5 LF8708 U2011 U105 U1015 r110x RJ45X
Text: 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DQ28 VDDQ DQ27 DQ26 VSSQ DQ25 , RXD3X_0 56 RXD3X_1 57 RXD3X_2 58 RXD3X_3 59 60 GND 61 CRS4 62 COL4 TXEN4 63 64 GND TXD4X , # 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 , 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52


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PDF 1000PF RX8BI82 SPD100LED6# LED17 SPD100LED8# LED25 LED14 LED15 LED24 ttl7404 OP404 U1056 193 ec5 LF8708 U2011 U105 U1015 r110x RJ45X
PLHC-374

Abstract: SN30 SN34A SN40S SN40A Sn40C SN30A antenna yagi uhf
Text: No file text available


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PDF RG-58 SN30S SN34S SN40S SN46S SN66S SN30LS SN34LS SN40LS PLHC-374 SN30 SN34A SN40A Sn40C SN30A antenna yagi uhf
BR4 m

Abstract: SN30 SN30S SN46
Text: No file text available


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PDF RG-58 SN30L SN34L SN40L SN46L SN66L SN30S SN34S SN40S BR4 m SN30 SN46
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF H8/38602R H8/38602R REJ06B0510-0100/Rev
2000 - Not Available

Abstract: No abstract text available
Text: No file text available


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3N155

Abstract: 3n157
Text: Turn-Off Delay >s — — 60 ns Fall Time tf - - 100 ns MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND


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PDF 3N155 O-206AF) 3n157
2004 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
SD1101BD

Abstract: SD1100 SD1100DD SD1100HD SD1101 TI 07W SD1101CHP SD1101DD SD1101HD VP0540
Text: '" 19 60 19 42 lD = 10mA Tc = 125°C 12 9(3 Forward Transconductance™ 250 400 250 400 VDS = 25V


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PDF SD1100CHP SD1101CHP O-226AA SD1101BD O-206AA SD1100DD SD1101DD O-205AF SD1100HD. SD1101HD SD1101BD SD1100 SD1100HD SD1101 TI 07W SD1101CHP SD1101DD SD1101HD VP0540
DIODE S45

Abstract: No abstract text available
Text: Vcc — 30V ID = 2.1A Kjs = 10V rgs = son tr - 50 60 Turn-off time f0„ (4« = 'd (off) + i) td (off] - 100 140 t, - 60 80 Fast-recovery reverse diode Continuous reverse drain , SIEMENS AKTIENGESELLSCHAF - Power dissipation PD = f{Tc) BUZ 361 80 W 70 60 50 40 30 20 10 0


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PDF
IRFF220

Abstract: IRFF221 08z1
Text: ! 4 6 9 10 20 40 60 80 100 200 40 Vos, DRAIN-TO-SOUACE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA


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PDF RFIF220 100me 25K/W IRFF221-Â IRFF220 IRFF221 08z1
transistor irf250

Abstract: IRF251 IRF250..251 D86FN2 25 fmr 160 IRF250 C063
Text: No file text available


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PDF IRF250 D86FN2 Excell00 00A//US, transistor irf250 IRF251 IRF250..251 25 fmr 160 C063
OSC 125MHz

Abstract: U17E AX88655 AX88655P CRYSTAL 27MHZ 8c350 AT24C16B
Text: . 23 6.0 PACKAGE INFORMATION , 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 AX88655P 10/100 , ­ 60 Transmit Data: Please references section 2.1.1. TX_CLK1 COL1 CRS1 RX_DV1 RX_CLK1 , -T Ethernet Switch 6.0 PACKAGE INFORMATION A2 A1 L L1 D Hd He E pin 1 e b


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PDF AX88655 10/100/1000BASE-T AX88655-1 OSC 125MHz U17E AX88655P CRYSTAL 27MHZ 8c350 AT24C16B
BSN10A

Abstract: BSN10
Text: values. 80 RDS(on) ("> 60 40 B 10 VGS M VDS = 0.1 V; T, = 25 °C. Rg.7 Drain-source on-resistance


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PDF BSN10; BSN10A BSN10A BSN10
2007 - ic lm35dz

Abstract: datasheet ic lm35dz LM35DZ application LM35DZ TLV272IP
Text: No file text available


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PDF H8/300H H8/38602R H8/38602R REJ06B0644-0100/Rev ic lm35dz datasheet ic lm35dz LM35DZ application LM35DZ TLV272IP
2N4351 equivalent

Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
Text: 140 kHi) 'Cd(sub) — s 6.0 pF Drain-Source Resistance IVQS - 10 V, iD - 0.1 - 1.0 kHi) rds(on - , Turn-Off Delay (Fig. 7) 60 ns Fall Time (Fig. 8)


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PDF 2fl42L 2N4351 Cdfsubl10 2N4351 equivalent 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
1998 - 74HCT244D

Abstract: AM26LS32BSC TC3001 R18A1 MT41LC256K32D4LG12 XF10B1Q3 PHY100 DDATA11 c14 c13 A3259
Text: DData15 66 DData14 64 DData13 63 DData12 62 DData11 61 DData10 60 DData9 59 DData8 58 DData7 , DQM3 BA A0 A1 A2 A3 A4 A5 A6 A7 A8 DAddr[11.0] 97 98 100 1 3 4 6 7 60 61 63 , 3 1 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 , 21 19 17 15 13 11 9 7 5 3 1 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 , 25 23 21 19 17 15 13 11 9 7 5 3 1 60 58 56 54 52 50 48 46 44 42 40 38 36


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PDF R383R384R385 GND-10 74LV109D CON10 CON11 MAX708TCSA 74HCT244D AM26LS32BSC TC3001 R18A1 MT41LC256K32D4LG12 XF10B1Q3 PHY100 DDATA11 c14 c13 A3259
transistor A 564

Abstract: 100-P BUK637-400B
Text: 2.8 A; VGS = 10 V; RGs = 50 £i; Rsen = 50 a - 20 60 200 75 40 90 250 90 ns ns ns ns L, Ls Internal , Specification PowerMOS transistor Fast recovery diode FET 120 110 loo 90 so 70 60 SO 20 10 PD% Normalised Power Derating 20 60 SO 100 120 140 Tmb/°C Fig. 1. Normalised power dissipation. PD% = 100-P[/Po25-C- fUmb , i i s i ■60 -40 -20 0 10 40 60 BO 100 1i0 140 7J/°C Fig. 10 , ; VDS = Ves 1.5 - 1.0 ■0.5 - Noma, sed RDS(ON) - l(Tj) zz - 60 -40 -20 0 20 40 60 80 100 120 140 T


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PDF BUK637-400B BUK637-400B transistor A 564 100-P
APT6060CN

Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Text: / 50 °C é Tj< .+25° 3 f= / / // 1 i 0 20 40 60 80


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PDF APT6060CN APT5560CN APT6070CN APT5570CN 5560CN 6060CN 5570CN 6070CN Junc01 O-254AA 2SJ10 6060C BAVP
IXFN64N20

Abstract: 1301C
Text: No file text available


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PDF 1301C IXFN64N20 O-238 IXFN64N20 1301C
3N188

Abstract: 3N190 3N189 3N191
Text: No file text available


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PDF 3N188-3N191 3N188 3N189 3N190, 3N191 10sec) 300mW 300ns; 3N190 3N189 3N191
transistor D 4515

Abstract: 100-P BUK556-60A A1730
Text: voltage 60 V ID Drain current (DC) 50 A P.c. Total power dissipation 150 W DStGNj Drain-source on-state , (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT vDS Drain-source voltage 60 V Vogp Drain-gate voltage Rgs = 20 kn - 60 V ±Vgs Gate-source voltage - - 15 V ±Vgsm Non-repetitive gate-source voltage , base Thermal resistance junction to ambient - 60 1.0 K/W K/W April 1993 This Material Copyrighted , resistance VGS = 0 V; lD = 0.25 mA VGS; lD = 1 mA 60 V; VGS = 0 V; T, = 25 °C 60 V;VGS = 0V;T|=125 °C


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PDF BUK556-60A PINNING-T0220AB -ID/100 transistor D 4515 100-P A1730
J441

Abstract: mosfet J442 IRFJ441 IRFJ442 IRFJ440 IRFJ443 MOSFET "CURRENT source" g581 9409A
Text: 450 V to @ TC = 25°C Continuous Drain Current 6.0 6.0 5.0 5.0 A to @ TC = 100°c Continuous Drain , - 125°C 'D(on) On-State Drain Current © IRFJ440 IRFJ441 6.0 - - A VDS > >D(on) * RDS(on)max , ALL — ■14 30 ns Qg Total Gate Charge (Gate-Source Plus Gate-Drain) ALL - 42 ' 60 nC r VGg = , Diode) IRFJ440 IRFJ441 - - 6.0 A Modified MOSFET symbol 1 w",-t-1 showing the integral reverse P-N , 40 60 SO 100 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 — Typical Output Characteristics 0 2 4


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PDF T-39-11 IRFJ440 IRFJ441 IRFJ442 param12 G-585 IRFJ440, IRFJ441. IRFJ442, IRFJ443 J441 mosfet J442 IRFJ441 IRFJ442 IRFJ440 MOSFET "CURRENT source" g581 9409A
IRFD020

Abstract: oasi 10C1 IRFD022 19s7
Text: Inductances f . |_a Lg Internal Source Inductance ALL 6.0 nH Measured from the source lead, 6mm (0.25 in , , Tn - 1 - 60 -40 -20 0 20 40 60 80 100 120 140 160' Tj , VG S " 10V - 60 -40 -20 0 20 40 60 80 100 120 140 160 Tj. JUNCTION TEMPERATURE ( °C) Fig. 9 â , Circuit 10« 103 3 102 iol 60 % UCL v. 90% UCL^ 9 1 \ 3


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PDF 00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7
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