The Datasheet Archive

CRS3/10 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
CRS3/10 CRS3/10 ECAD Model ITT Semiconductors Semiconductor Summary 1969 Scan PDF
CRS3/10 CRS3/10 ECAD Model Others Shortform Electronic Component Datasheets Scan PDF
CRS-3-100 CRS-3-100 ECAD Model Bivar CO-Extruded self retaining screw spacers Original PDF
CRS-3-1.000 CRS-3-1.000 ECAD Model Bivar CO-Extruded self retaining screw spacers Original PDF
CRS3/10AF CRS3/10AF ECAD Model ITT Industries Misc. Data Book Scans 1975/76 Scan PDF

CRS3/10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
40af

Abstract: Thyristors BRX47 BRY44 BRY42 50AF thyristors itt CRS3/40AF Thyristors BRX45 CRS3-40AF BRX44
Text: No file text available


OCR Scan
PDF 300mAâ Tj-55 BRX44 32913X BRX45 32914H BRX46 BRX47 32916D BRY42, 40af Thyristors BRX47 BRY44 BRY42 50AF thyristors itt CRS3/40AF Thyristors BRX45 CRS3-40AF
Not Available

Abstract: No abstract text available
Text: . 10 REJ06B0511-0100/Rev.1.00 March 2005 Page 1 of 13 H8/38602R Group Voltage Comparison , Interrupt request 25/30 10 /30 R 9/30 9R Figure 2 Block Diagram of Comparators REJ06B0511 , interrupts. REJ06B0511-0100/Rev.1.00 March 2005 Page 10 of 13 H8/38602R Group Voltage


Original
PDF H8/38602R H8/38602R REJ06B0511-0100/Rev
PLHC-374

Abstract: SN30 SN34A SN40S SN40A Sn40C SN30A antenna yagi uhf
Text: Bndwidih 1.5:1 MHz 1.0 1.3 1.7 2.6 2.9 3.1 1.0 1.3 1.7 -3dB Bmwkfth E-Plane* 73 73 73 73 73 73 73 73 73


OCR Scan
PDF RG-58 SN30S SN34S SN40S SN46S SN66S SN30LS SN34LS SN40LS PLHC-374 SN30 SN34A SN40A Sn40C SN30A antenna yagi uhf
BR4 m

Abstract: SN30 SN30S SN46
Text: Model Freq. MHz R u g g e d R in g o s CRS-2 25-33 CRS-3 CRS-4 CRS-6 CRS-7 CRS-8 CRS-9 CRS- 10 CRS , 250 250 250 250 250 250 250 250 250 500 500 500 Bndwidth 1.5:1 MHz 1.0 1.3 1.7 2.6 2.9 3.1 3.4 3.6 3.9 1.0 1.3 1.7 Bmwicfth E-Plane0 73 73 73 73 73 73 73 73 73 73 73 73 Conn, Height Type (female) ft(m


OCR Scan
PDF RG-58 SN30L SN34L SN40L SN46L SN66L SN30S SN34S SN40S BR4 m SN30 SN46
ttl7404

Abstract: OP404 U1056 193 ec5 LF8708 U2011 U105 U1015 r110x RJ45X
Text: 9 10 AC6 R113_X 11 12 L17 U101_13 R38 TD6+ R11 TD6- 14 15 TCT2 CMT2 , 15 14 13 12 11 10 9 BI_D22BI_D22+ TX_D2BI_D21BI_D21+ TX_D2+ RX_D2RX_D2+ RX_D4 , + RD3RD3+ RX2RX2+ 26 27 28 TD2- 10 18 R3 49.9 R22 U105_14 17 16 49.9 29 , TD3+ R5 49.9 TD3- 10 R29 TD4- 10 49.9 R30 TD3+ TD3- TD4- R8 R7 , 2 1 RD3- L14 10 BI42 R146 75 R150 R149 75 75 C161 CHASSIS GND RD3+ AC3


Original
PDF 1000PF RX8BI82 SPD100LED6# LED17 SPD100LED8# LED25 LED14 LED15 LED24 ttl7404 OP404 U1056 193 ec5 LF8708 U2011 U105 U1015 r110x RJ45X
Not Available

Abstract: No abstract text available
Text: . 10 REJ06B0510-0100/Rev.1.00 March 2005 Page 1 of 12 H8/38602R Group Voltage Comparison , generator 26/30 R Interrupt request 25/30 10 /30 R 9/30 9R Figure 2 Block Diagram of , Address H'0000 H'0100 H'FB80 REJ06B0510-0100/Rev.1.00 March 2005 Page 10 of 12 H8/38602R


Original
PDF H8/38602R H8/38602R REJ06B0510-0100/Rev
2000 - Not Available

Abstract: No abstract text available
Text: No file text available


Original
PDF
2004 - Not Available

Abstract: No abstract text available
Text: No file text available


Original
PDF
transistor irf250

Abstract: IRF251 IRF250..251 D86FN2 25 fmr 160 IRF250 C063
Text: , lD = 16A) Rds(ON) — 0.075 0.085 Ohms Forward Transconductance (VDs = 10V, lD = 16A) 9fs 7.2 10 â


OCR Scan
PDF IRF250 D86FN2 Excell00 00A//US, transistor irf250 IRF251 IRF250..251 25 fmr 160 C063
3N155

Abstract: 3n157
Text: I Symbol | Min | Typ Msx Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Id = - 10 jtAdc, Vq = Vs = 0) V(BR)DSX -35 — — Vdc Zero-Gate-Voltage Drain Current (Vds = - 10 Vdc, Vqs = 0) |VDS = — 10 Vdc, Vqs = 0,Ta = 125T) IDSS _ — - 1.0 -1000 nAdc Gate Reverse Current (Vqs = +50 Vdc, Vqs = (Vqs = +25 Vdc, Vos = 0) iGSS — _ + 1000 + 10 pAdc Resistance Drain Source (Iq = 0, Vqs = 0 , Gate Forward Leakage Current (Vgs = -50 Vdc, Vqs = 0) (Vqs = -25 Vdc, Vqs = 0) 'G(f) — — -1000 - 10


OCR Scan
PDF 3N155 O-206AF) 3n157
2007 - ic lm35dz

Abstract: datasheet ic lm35dz LM35DZ application LM35DZ TLV272IP
Text: VCref CMCR1 4R 26/30 R 25/30 R 24/30 Interrupt generator 10 /30 Interrupt generation , Function This is a 10 -bit A/D converter with a successive approximation method, and can convert analog , 0. 3. Execute the SLEEP instruction. REJ06B0644-0100/Rev.1.00 March 2007 Page 10 of 29 , ) temperature. The operating voltage ranges from 4 to 30 V, and the temperature coefficient is linear, + 10 mV , ADR6 12 Undefined ADR5 11 Undefined ADR4 10 Undefined ADR3 9 Undefined ADR2 8 Undefined


Original
PDF H8/300H H8/38602R H8/38602R REJ06B0644-0100/Rev ic lm35dz datasheet ic lm35dz LM35DZ application LM35DZ TLV272IP
SD1101BD

Abstract: SD1100 SD1100DD SD1100HD SD1101 TI 07W SD1101CHP SD1101DD SD1101HD VP0540
Text: Temperature Range . -55° C to +150° C Lead Temperature (1/6" from mounting surface for 10 Sec , Breakdown Voltage 450 475 400 425 V lD = 10 //A, VGS = 0 2 Igssf Gate Forward Leakage Current .03 10 .03 10 nA VGS = 20V VDS = 0 3 Igssr Gate Reverse Leakage Current -.03 - 10 -.03 - 10 VGS = -20V 4 , Threshold Voltage 1.0 3.0 5.0 1.0 3.0 5.0 V lD = 1QjwA, VDS = Vqs 9 'D(ON) ON Drain Current1" 250 750 250 750 mA VDS = 25V, Vqs 10V 10 rDS(ON) Drain-Source ON 13 35 13 25 ohms VQS=10V 11 Resistance


OCR Scan
PDF SD1100CHP SD1101CHP O-226AA SD1101BD O-206AA SD1100DD SD1101DD O-205AF SD1100HD. SD1101HD SD1101BD SD1100 SD1100HD SD1101 TI 07W SD1101CHP SD1101DD SD1101HD VP0540
IRFF220

Abstract: IRFF221 08z1
Text: " from Case for 10 Seconds TL 260 260 °C (1) Repetitive Rating: Pulse width limited by max. junction , [S s s s. 10 *18 A y > 100 ut , < ,.6 a 2 «■« 1 1.2 0 s 10 0.8 z 1 °-6 ce 0.4 0.2 0 I I I I I I - CONDITIONS: RDS(ON , ! 4 6 9 10 20 40 60 80 100 200 40 Vos, DRAIN-TO-SOUACE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA


OCR Scan
PDF RFIF220 100me 25K/W IRFF221-Â IRFF220 IRFF221 08z1
BSN10A

Abstract: BSN10
Text: , Intended for use In general purpose fast switching applications. PINNING PIN DESCRIPTION BSN 10 1 gate , = 10 mA; VGS = 2.5 V - 18 30 n IYJ transfer admittance lD= 100 mA; VDS= 10 V 40 80 - mS input capacitance VDS= 10 V; VGS = 0; f = 1 MHz - 8 15 pF Coaj output capacitance Vos = 10 V; VGS = 0; f = 1 MHz - 7 15 pF Crs3 feedback capacitance VDS = 10 V; VGS = 0; f = 1 MHz - 2 5 pF Switching times turn-on time 1,5=100 mA; VDD = 20 V; VGS = 0 to 10 V - 2 5 ns w turn-off time lD = 100 mA; Vdd = 50 V


OCR Scan
PDF BSN10; BSN10A BSN10A BSN10
IXFN64N20

Abstract: 1301C
Text: switching · High commutating dv/dt rating ( 10 V/ns) · Fast intrinsic rectifier (trr < 250 ns) · Isolated TO , Drain-Source Voltage (1) Drah-Gab Voltage (Rgs = 1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage , 64 256 300 2.4 64 10 -40 to+150 -40 to+125 0.42 NotAppfcable 13 13 Unit V do V do V do V A do , 10 V, Id = Id Max. x 0.5 V d s = 10 V, Id = Id Max. x 0.5 V g s = 0 V, V d s = 25 V, f = 1 MHz Si , s s x 0.5, Id = Id Max. x 0.S , Zo = 25 n td(on) tr td(off) tf V g s = 10 V, Id = Id Max., V


OCR Scan
PDF 1301C IXFN64N20 O-238 IXFN64N20 1301C
DIODE S45

Abstract: No abstract text available
Text: ss — 10 100 nA CO CO II II ro S3 Drain-source on-resistance Ads (on) — 4,0 4,5 a l'es = 10V /D , SIEMENS AKTIENGESELLSCHAF - Power dissipation PD = f{Tc) BUZ 361 80 W 70 60 50 40 30 20 10 0 , , VDS = 26V, 7j = 25 °C V 10 786 1366 G-03 flfl» D ■flg35b05 001SG77 3 «SIEG 88D 15077 D , 10 R « DSlonl j â , 25 °C 2,0 1.0 1,0 Qate threshold voltage I^sum =■HT]) parameter: VDS = fGSi ID =• 1mA


OCR Scan
PDF
OSC 125MHz

Abstract: U17E AX88655 AX88655P CRYSTAL 27MHZ 8c350 AT24C16B
Text: AX88655 P 5-Port 10 /100/1000BASE-T Ethernet Switch 5-Port Gigabit Ethernet Switch with Embedded Memory Document No.: AX88655- 1.0 / V1.0 / Mar, 12,2002 Features · · · · · · · · · 5 , interface Full Duplex 1000 Mbit/s. Full and Half Duplex 10 /100 Mbit/s Supports auto-sensing or manual , Product Description The AX88655 is a 5-Port 10 /100/1000 Mbps Ethernet switch with GMII or MII Interface , cost-effective backbone switches for small to medium sized businesses. The AX88655 5-Port 10 /100/100 BASE-T


Original
PDF AX88655 10/100/1000BASE-T AX88655-1 OSC 125MHz U17E AX88655P CRYSTAL 27MHZ 8c350 AT24C16B
3N188

Abstract: 3N190 3N189 3N191
Text: Conditions 3N188 3N189 3N190 3N191 Units Min Max Min Max 'gssr Gate Reverse Current VGS=40V 10 PA 'gssf Gate Forward Current VQS= -40 V -200 - 10 TA=125°C -200 -25 BVdss Drain-Source Breakdown Voltage Iq= - 10 /hA -40 -40 V BVsds Source-Drain Breakdown Voltage Is=-10HA,VBD = 0 -40 -40 vGS(th , -30.0 mA DEJ3Ö750Ö1 D011DE3 fl T- - 2. 7 « I M z 10 FEATURES • Very High Input impedance â , (Note 5) 1.5 1.0 C0ss Output Capacitance Input Shorted (Note 5) 3.0 3.0 SWITCHING


OCR Scan
PDF 3N188-3N191 3N188 3N189 3N190, 3N191 10sec) 300mW 300ns; 3N190 3N189 3N191
2N4351 equivalent

Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
Text: | Mln | Man | UnH | OFF CHARACTERISTICS Drein-Source Breakdown Voltage 10 pA. Vqs = 01 V|BR|DSX 25 - Vdc Zero-Gate-Voltage Drain Current (VDS - '0 V. VQS = 0) TA > 25X TA - 150X 'DSS - 10 10 nAdc pAdc Gate Reverse Current (VGS = ±16 Vdc. VDs - 0) 'gss - ± 10 pAdc ON CHARACTERISTICS Gale Threshold Voltage IVoS - 10 V, lD - 10 )iA> vGS|Th) 1.0 5 Vdc Drain-Source On-Vollage * «0 « 2 0 mA, Vqs - 10 V) vOS(on) — 1.0 V On-Slate Drain Current (VQS = 10 V. VQS = 10 V) 'D(on) 3.0 - mAdc


OCR Scan
PDF 2fl42L 2N4351 Cdfsubl10 2N4351 equivalent 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
1998 - 74HCT244D

Abstract: AM26LS32BSC TC3001 R18A1 MT41LC256K32D4LG12 XF10B1Q3 PHY100 DDATA11 c14 c13 A3259
Text: [8] RxDE[9] RxDE[ 10 ] RxDE[11] GT48212 100Mbit DQM Ras~ Cas~ WE~ CS~ TXDE[0] TXDE[1] TXDE[2] TXDE[3] TXDE[4] TXDE[5] TXDE[6] TXDE[7] TXDE[8] TXDE[9] TXDE[ 10 ] TXDE[11 , /GP[5] ColE/GP[6] ColE/GP[7] ColE/GP[8] ColE/GP[9] ColE/GP[ 10 ] ColE/GP[11] LEDClk LEDData , RxDE6 RxDE7 RxDE8 RxDE9 RxDE10 RxDE11 4 7 8 9 10 11 12 13 14 18 19 20 R3 4.7K , ] AD[17] AD[16] AD[15] AD[14] AD[13] AD[12] AD[11] AD[ 10 ] AD[9] AD[8] AD[7] AD[6] AD[5] AD


Original
PDF R383R384R385 GND-10 74LV109D CON10 CON11 MAX708TCSA 74HCT244D AM26LS32BSC TC3001 R18A1 MT41LC256K32D4LG12 XF10B1Q3 PHY100 DDATA11 c14 c13 A3259
APT6060CN

Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Text: " from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic ! Test , < 380 fiS, Duty Cycle < 2% ©See MIL-STD-750 Method 3471 1.0 ~ 0.5 á LU Q. 2 cc Ul x 0.005 « IM 0001 ^ 0"4 10"3 10 "z 10 " 1.0 rectangular pulse duration (seconds) FIGURE 1. MAXIMUM EFFECT.VE , 8 VQS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 10 , – o z < CC a a cc 3.0 2.5 2.0 1.5 1.0 0.5 0.0 l0-0.5 l„ [Ocnl.| vos",ov


OCR Scan
PDF APT6060CN APT5560CN APT6070CN APT5570CN 5560CN 6060CN 5570CN 6070CN Junc01 O-254AA 2SJ10 6060C BAVP
transistor A 564

Abstract: 100-P BUK637-400B
Text: ±30 V; Vcs = 0 V Vqs = 10 V; lD = 6.5 A 400 2.1 3.0 2 0.1 10 0.5 4.0 20 1.0 100 0.6 V jiA mA nA Q , 2.8 A; VGS = 10 V; RGs = 50 £i; Rsen = 50 a - 20 60 200 75 40 90 250 90 ns ns ns ns L, Ls Internal , Specification PowerMOS transistor Fast recovery diode FET 120 110 loo 90 so 70 60 SO 20 10 PD% Normalised Power , .2. Normalised continuous drain current. ID% « 100-Iq/ID2S-0= ffT^); conditions: VGS> 10 V 28 24 20 16 12 8 4 0- 0 2 4 6 8 10 12 14 16 18 20 VDS/V Fig. 5. Typical output characteristics, Tj = 25 'C. _/p = f(Vps


OCR Scan
PDF BUK637-400B BUK637-400B transistor A 564 100-P
IRF G40

Abstract: G37 IRF IRF1401 IRF142 IRF141 IRF143 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
Text: (0.25 In.) from package to source bonding pad. VGS - 0V, VDS - 25V f * 1.0 MHz See Fig. Modified MOSFET , Transfer Capacitance ALL AU ALL " - 1500 500 90 " - pF PF pF 10 G-36 HE 0 I , -SI 40 ui £E UJ o. 30 J 20 i? 10 Ö .0 I > y > i Y é ÁV V r / / y , v(s = 6V - IRF1.40. 1 2 \ * > 3 ' la s 10 5 S ' · Tq =25°C Tj =175°C SINGLE PULSE 2 .0 3 .0 4 .0 5* 10 s V , OC 10 ¿ ·TRF 140 P 1 1 1 Hill 10d VDS


OCR Scan
PDF 5S455 00QTQ5Ô O-204AE IRF140, IRF141, IRF142, IRF143 S54S2 T-39-13 IRF G40 G37 IRF IRF1401 IRF142 IRF141 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
IRFR012

Abstract: 8SS4 irfr010 IRFU010 IRFU012 k 3525 MOSFET
Text: Vqs = -20V Og Total Gate Charge ALL - 6.7 10 nC Vqs » 10V, ld * 7.3A Vds e 0.8 x Max. Rating See , ALL - 250 - pF VGS = OV, V0S - 25V f - 1.0 MHz See Fig. 10 Coss Output Capacitance ALL - 150 - pF Crs3 Reverse Transfer Capacitance ALL 29 pF C- 10 INTERNATIONAL RECTIFIER HE D | MflSSMSS , INTERNATIONAL RECTIFIER 10 UÌ lu Œ uj CL X < uj a: a: a 2 I_I C- BOys PUL 3E T HST ' 0 V i ' \/ nv , I 0 0.5 1.0 1.5 2.0 a.5 VDS, DRAIN-TO-SOURCE VOLTAGE ÍVOLTS) 1 2 3 10 2 5 10a VDS


OCR Scan
PDF T-35-25 IRFR010 IRFR012 IRFU010 IRFR010, IRFR012, IRFU010, IRFU012 MflS54S2 8SS4 IRFU010 k 3525 MOSFET
transistor D 4515

Abstract: 100-P BUK556-60A A1730
Text: base Thermal resistance junction to ambient - 60 1.0 K/W K/W April 1993 This Material Copyrighted , Vds Vds Vds VGS = ±15 V; VDS = 0 V 60 1.0 VGS = 5 V; lD = 25 A 1.5 1 0.1 10 20 2.0 10 1.0 100 , ;conditions: VGS> 10 V ■10— î I I \a-I I //// vas/ v= I ¡¡ , . _Id = f(Vps); parameter Vcs_ ! ! i 1 ' i M.u ■BBi \ ' tp= 10 us j î ^iTv^ NJ ' -finn im—r , / ; h ~~i 1 1 ! _7j as/\f = 0 j i ; 1 1 : i , —i 10 /A Fig.6. Typical


OCR Scan
PDF BUK556-60A PINNING-T0220AB -ID/100 transistor D 4515 100-P A1730
Supplyframe Tracking Pixel