CRF-22010 Search Results
CRF-22010 Result Highlights (6)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LMZ22010TZ/NOPB |
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10A SIMPLE SWITCHER® Power Module with 20V Maximum Input Voltage and Current Sharing 11-PFM -40 to 85 |
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| LMZ22010TZE/NOPB |
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10A SIMPLE SWITCHER® Power Module with 20V Maximum Input Voltage and Current Sharing 11-PFM -40 to 85 |
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| 5962R2220101VXC |
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Radiation-hardened, QMLV 200-V half-bridge GaN gate driver 48-CFP -55 to 125 |
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| ME3220-102MLB |
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General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT |
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| ME3220-104KXC |
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General Purpose Inductor, 100uH, 10%, 1 Element, SMD |
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| ME3220-102MLC |
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General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT |
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CRF-22010 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Curated | Type | |
|---|---|---|---|---|---|---|
| CRF-22010 |
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Class A/B 10 W SiC MESFET RF Transistor | Original | |||
| CRF-22010-001 |
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62.5mW 120VDC SiC RF power MESFET. For class A,AB amplifiers TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS | Original | |||
| CRF-22010-101 |
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62.5mW 120VDC SiC RF power MESFET. For class A,AB amplifiers TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS | Original | |||
| CRF-22010-101 |
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10 W SiC RF Power MESFET | Original | |||
| CRF-22010-TB |
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50VDC 66W evaluation board for CRF-22010 version A (narrowband) | Original |