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CQX17 EMITTER IR 940NM 100MA TO-46
CQX17 ECAD Model
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CQX17 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
CQX17 CQX17 ECAD Model Fairchild Semiconductor GaAs INFRARED EMITTING DIODE Original PDF
CQX17 CQX17 ECAD Model General Electric Infrared emitter. Scan PDF
CQX17 CQX17 ECAD Model Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
CQX17 CQX17 ECAD Model QT Optoelectronics GAAS INFRARED EMITTING DIODE Scan PDF

CQX17 Datasheets Context Search

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2001 - CQX15

Abstract: CQX17
Text: CQX15, CQX17 GaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS The CQX15 and CQX17 series are 0.209 (5.31) 940nm LEDs in a wide angle, TO-46 0.184 (4.67) package. 0.030 , Total Power CQX15 (7) Total Power CQX17 (7) Rise Time 0-90% of output Fall Time 100-10% of output , Corporation DS300285 4/26/01 1 OF 3 www.fairchildsemi.com CQX15, CQX17 GaAs INFRARED EMITTING , 4/26/01 DS300285 CQX15, CQX17 GaAs INFRARED EMITTING DIODE DISCLAIMER FAIRCHILD


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PDF CQX15, CQX17 CQX15 CQX17 940nm DS300285
Not Available

Abstract: No abstract text available
Text: aJ*S^ I Ì ^ mn* ^ U B l OPTOELECTRONICS GaAs INFRARED EMITTING DIODE _CQX15, CQX17 |l«gOW iyilW |*] The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. II piumppi i I . .Ill m w I. ST1331 Good optical to mechanical alignment SYMBOL A ÿb 0 D , e ®i h J , CQX15 Total Power CQX17 Rise Tim e 0-90% of output Fall Time 100-10% of output SYMBOL MIN. - _ , ngle o f 2 tt steradians. CQX15, CQX17 3-206 OPTOELECTHOKICS GaAs INFRARED EMITTING DIODE


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PDF CQX15, CQX17 CQX15/17 940nm ST1331 100rnA
Not Available

Abstract: No abstract text available
Text: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOm tS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO , Emission Angle at !4 Power Total Power CQX15 Total Power CQX17 Rise Time 0-90% of output Fall Time , 74bbflSl 0 Q 0 b 4 5 3 03Ö ST1274 3-207 CQX15, CQX17 Fig. 5. Typical Fladiation Pattern


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PDF CQX15, CQX17 CQX15/17 940nm Q00L452 ST1271 ST1276 ST1272 74bbflSl ST1274
Not Available

Abstract: No abstract text available
Text: EQ GaAs INFRARED EMITTING DIODE OPlOELEtllOmtS CQX15, CQX17 DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES SYMBOL A <£b 4>D #>, e ei h i k L a Good optical to mechanical alignment Mechanically and wavelength matched to TO , Emission Angle at !4 Power Total Power CQX15 Total Power CQX17 Rise Time 0-90% of output Fall Time , 0 Q 0 b 4 5 3 03Ö ST1274 3-207 CQX15, CQX17 Fig. 5. Typical Fladiation Pattern


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PDF CQX15, CQX17 CQX15/17 940nm Q00L452 ST1271 ST1276 ST1272 74bbflSl ST1274
Not Available

Abstract: No abstract text available
Text: B FQ wmm* OPTOELECTRONICS GaAs INFRARED EMITTING DIODE CQX15, CQX17 PACKAGE DIMENSIONS SEATING DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. FEATURES Good optical to mechanical alignment SYM BO L A ©b @D ®D, e .016 .209 .180 IN C H E S MIN. MAX. .155 .021 .230 .187 ,407 5.31 4.57 M ILLIM ETER S MIN. MAX. 3.93 ,533 5.84 4.77 2 2 NO TES Mechanically , ission W avelength Em ission A ngle at 'k Power Total Power CQX15 Total Power CQX17 Rise Tim e 0-90% o f


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PDF CQX15, CQX17 CQX15/17 940nm
Not Available

Abstract: No abstract text available
Text: European "Pro Electron" Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode T h e CQX14, CQX15, CQX16, CQX 17 series are gallium arsenide, light em itting diodes w hich em it n o n -co h eren t, in fra re d energy with a p eak wave len g th o f 940 n an o m eters. T hey are ideally suited fo r use with silicon d etecto rs a n d are m o u n ted in aT O , Pt pt 1 3 -65 C t o +150 C -65°C to +150° C Tstg 10 seconds at 2 60 C Tj CQX15, CQX17


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PDF CQX14, CQX15, CQX16, CQX17 COX14, CQX16 CQX14-CQX17
Not Available

Abstract: No abstract text available
Text: European "Pro Electron" Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode The CQX14, CQX15, C.QX16, CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave length o f 940 nanometers. They are ideally suited for use with silicon detectors and are m ounted in aTO -18 style hermetically , CQX17 have a flat window for a wide beam angle which is useful with external lensing. CQX14, CQX16


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PDF CQX14, CQX15, CQX16, CQX17 CQX14 CQX16 CQX17
CQX15

Abstract: CQX17 ST1331 ST1274
Text: OPTOELECTRONICS GaAs INFRARED EMITTING DIODE CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION SEATING ST1331 SYMBOL INCHES MILLIMETERS NOTES MIN. MAX. MIN. MAX. A .155 3.93 @b .016 .021 .407 .533 ®D .209 .230 5.31 5.84 ®D, .180 .187 4.57 4.77 e .100 NOM. 2.54 NOM. 2 e, .050 NOM. 1.27 NOM. 2 h .030 .76 i .031 .044 .79 1.11 k .036 .046 .92 1.16 1 L 1.00 25.4 a 45° 45 , at Vfe Power 0 ±40 Degrees Total Power CQX15 Po 5.4 — mW lF = 100 mA'71 Total Power CQX17 Po


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PDF CQX15, CQX17 ST1331 CQX15/17 940nm ST160 100mA TA-25 ST1271 ST1276 CQX15 CQX17 ST1331 ST1274
240CC

Abstract: TE10A
Text: E OFTBELEDTftS K!CS O GaAs INFRARED EMITTING DIODE CQX15) CQX17 SEATING PLANS *-A- * -*jh T T - The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. l - L ST1331 Good optical to mechanical alignment SYMBOL m A «o »D; e h i k L a MILLIMETERS INCHES NOTES MIN. MAX. MIN. MAX 3.93 .160 .533 .01e ·081 .407 .209 5.3t SM 230 47? 457 .100 18? 2.54 MOW. 2 , CQX17 Rise Time 0-90% of output Fall Time 100-10% of output Power 940 ¿40 5.4 1.5 1.0 1.0 - nm


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PDF CQX15) CQX17 CQX15/17 940nm ST1331 TQ-18 CQX15 CQX17 100mA 70mWf 240CC TE10A
2002 - LED56F

Abstract: F5E3 IR LED 940 nm
Text: Hermetic Light Emitting Diodes TO-46 Diode Package (Flat Lens) 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) Part Number 1N6265 CQX15 CQX17 LED55BF LED55CF LED56F F5E1 F5E2 F5E3 PO @ 100 mA IF VF @ 100 mA IF (mW) (V) min max max 6.00 5.40 1.50 3.50 5.40 1.50 12.00 9.00 10.50 ­ ­ ­ ­ ­ ­ ­ ­ ­ 1.7 1.7 1.7 1.7 1.7 1.7 1.8 1.8 1.8 IR @ 3 V VR (µA) max 10 10 10 10 10 10 10 10 10 Emission Angle in Degrees (°) @ 1/2


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PDF 1N6265 CQX15 CQX17 LED55BF LED55CF LED56F F5E3 IR LED 940 nm
MOC5010

Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Text: CNY36 CNY28 CNY47 CNY47A CNY48 CNY51 GFH60111 GFH601III GFH601IV CQX14 COX15 CQX16 CQX17 CQY80 F5D1 F502 , CNY35 CNY36 CNY37 CNY47 CNY47A CNY48 CNY51 CNY75A CNY75B CNY75C CQX14 CQX15 CQX16 CQX17 CQY80 F5D1 F5D2


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PDF 1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Not Available

Abstract: No abstract text available
Text: ) .220 (5 58) - 030 (-76) NOM .155 t'3.94) MAX \ 9 4 0 nm GaAs 1N6265 CQX15 CQX17 LED55BF LED55CF


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PDF 1N6266 CQX16 LED55B LED55C LED56
2002 - QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6 H22B1 H22B2 H22B3 H22B4 H22B5 H22B6 H22LOB H22LOI H22LTB H22LTI L14C1 L14C2 L14F1 L14F2 Page 5 6 14 14 14 17 17 19 5 6 5 6 5 5 5 6 6 6 17 17 17 17 17 17 17 17 17 17 17 17 18 18 18 18 19 19 19 19 19 19 19 19 19 19 19 19 20 20 20 20 15 15 14 14


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PDF 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
cqx 87

Abstract: CQX14 CQX15 CQX16 CQX17 "GE Solid state" CQX 13
Text: G E SOLID STATE Optoelectronic Specifications 01 DE(3fl750fll Gdllfllb b | ——r— TW/ Infrared Emitter CQX14, CQX15, CQX16, CQX17 Gallium Arsenide Infrared-Emitting Diode The GE Solid State CQX14-CQX15-CQX16-CQX17 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave length of940 nanometers. They are ideally suited for use with silicon detectors and are mounted in aTO-18 style hermetically sealed package. The CQX 14 and CQX 16 have a lens which provides a


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PDF 3fl750fll CQX14, CQX15, CQX16, CQX17 CQX14-CQX15-CQX16-CQX17 of940 aTO-18 -000mm) 778mm) cqx 87 CQX14 CQX15 CQX16 CQX17 "GE Solid state" CQX 13
2002 - ir diode 940 nm

Abstract: LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Text: 10 80 940 CQX15 5.40 ­ 1.7 10 80 940 CQX17 1.50 ­ 1.7 10


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PDF 1N6264 CQX14 CQX16 LED55B LED55C LED56 1N6265 CQX15 ir diode 940 nm LED55B LED56 LED55C LED56F 1N6264 1N6265 CQX14 CQX15 CQX16
Not Available

Abstract: No abstract text available
Text: )/(m A ) m ax ( m A )/(V ) m ax N o te s t 9 40 nm GaAs 1N6265 CQX15 CQX17 LED55BF LED55CF


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PDF 1N6264 1N6266 CQX14 CQX16 LED55B LED55C LED56 u70/100 100mA
MOC3Q11

Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N3S 4N 38A 4N39 4N40 BPW 36 BPW37 BPW38 CNX35 C NX36 C NY17 I C NY17 II C NY17 III C NY17 IV CNY28 C NY29 CNY30 CNY31 C NY32 C NY33 C NY34 C NY35 CNY36 CNY47 C N Y47A CNY48 CNY51 C QX14 C QX15 C QX16 CQX17 C Q Y80 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 Page No. 166 166 168 196 196 196 196 196 198 198 198 198 198 198 198 200


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PDF IN6264 IN6265 4N25A 4N29A 4N32A BPW37 BPW38 CNX35 CNY28 CNY30 MOC3Q11 h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Not Available

Abstract: No abstract text available
Text: A ) m ax W VR I m A )/[V ) m ax N o te s I 9 4 0 nm G aA s 1N6265 CQX15 CQX17 ±40° ±40°


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PDF 1N6264 1N6266 CQX14 CQX16 LED55B LED55C LED56 LED55BF LED55CF LED56F
CNY17 III

Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38A 4N39 4N40 BPW36 BPW37 BPW38 CNX35 CNX36 CNY17 I CNY17 II CNY17 III CNY17 IV CNY28 CNY29 CNY30 CNY31 CNY32 CNY33 CNY34 CNY35 CNY36 CNY47 CNY47A CNY48 CNY51 CQX14 CQX15 CQX16 CQX17 CQY80 F501 F5D2 F5D3 F5E1 F5E2 F5E3 Page No. 166 166 168 196 196 196 196 196 198 198 198 198


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PDF IN6264 IN6265 IN6266 4N25A 4N29A 4N32A 4N38A BPW36 BPW37 BPW38 CNY17 III H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Not Available

Abstract: No abstract text available
Text: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / ■43GE571 0027270 T ■HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode T he G E Solid S tate C Q X 14-C Q X I5-C Q X 16-C Q X 17 series are gallium arsenide, light em itting diodes which em it non-coherent, infrared energy w ith a peak wave length o f 940 nanom eters. T hey are


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PDF 43GE571 CQX14, CQX15, CQX16, CQX17 92CS-42662 92CS-429S1
TIL145

Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Text: CNY75A CNY75B CNY75C CQ X14 C O X IS CQX16 CQX17 CQ Y80 F5D1 F5D 2 F5D 3 F5E1 F5E2 F5E3 F5F1 F5G1 FCD 81Û , CQX17 CQ Y80 F5D1 F5D 2 F5D 3 F5E1 F5E2 F5E3 F5F1 F5G1 H 11A 3 H 11A5 H 11A3 H11A520 H11A520 H11A3 H


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PDF 1N6264 1N6265 1N6266 H21A1 H21B1 H22A2 TIL145 ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Text: 14 14 14 14 14 14 12 12 12 12 12 12 12 12 14 14 14 14 14 14 14 14 43 45 43 CQX14 CQX15 CQX16 CQX17


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PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6000 740L6001 ORB1134 H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB OPB704 MAN4710 1LP6
MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Text: CNY17GF-4.300 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 F5F1 F5G1 FLV110


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PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 740L6000 740L6001 740L6011 MAN-8610 CNW82 HLMPD150A CNY17GF-1
2002 - L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Text: 1.7 10 80 940 CQX15 5.40 ­ 1.7 10 80 940 CQX17 1.50 ­ 1.7


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PDF SE-171 L14F1 phototransistor datasheet l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: CNY36 CNY37 CNY47x CNY48 CNY51 CQV Series CQW13 CQW14 CQXi 3 Series CQX14 CQX15 CQX16 CQX17 CQX18A


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PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
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