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CMLD6001 datasheet (3)

Part Manufacturer Description Type PDF
CMLD6001 Central Semiconductor SMD Low Leakage Diode Dual Original PDF
CMLD6001DO Central Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW DUAL 75V 250MA SOT-563 Original PDF
CMLD6001DO Central Semiconductor SMD Low Leakage Diode Dual: Opposing Polarity Original PDF

CMLD6001 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - CMLD6001

Abstract:
Text: CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications requiring extremely , =1.0mA, RL=100 3.0 s V R3 (9-May 2011) CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW


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PDF CMLD6001 CMLD6001 OT-563 100mA
Not Available

Abstract:
Text: CMLD6001 SURFACE MOUNT PICO m inr DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications requiring extremely low , Semicondw TM CMLD6001 SURFACE MOUNT PICOminiTM DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES


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PDF CMLD6001 OT-563 OT-563
2008 - CMLD6001

Abstract:
Text: Central CMLD6001 TM Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications , =10mA, RL=100 Rec. to 1.0mA 3.0 s VF R1 (6-June 2008) Central TM CMLD6001 SURFACE


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PDF CMLD6001 OT-563 100mA CMLD6001 PA marking code
2003 - CMLD6001

Abstract:
Text: CMLD6001 SURFACE MOUNT PICOminiTM DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications , TM CMLD6001 SURFACE MOUNT PICOminiTM DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES


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PDF CMLD6001 OT-563 100mA CMLD6001
2014 - Not Available

Abstract:
Text: CMLD6001 SURFACE MOUNT SILICON DUAL, ISOLATED ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains two (2) isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package. These devices are designed for switching applications requiring extremely low , =1.0mA, RL=100Ω 3.0 μs R4 (3-February 2014) CMLD6001 SURFACE MOUNT SILICON DUAL, ISOLATED


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PDF CMLD6001 CMLD6001 OT-563 100mA
CMLD6001

Abstract:
Text: CMLD6001 SURFACE MOUNT DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications requiring extremely , 1.0mA 3.0 s 100 pA V R2 (18-January 2010) CMLD6001 SURFACE MOUNT DUAL, ISOLATED


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PDF CMLD6001 CMLD6001 OT-563 100mA 18-January
Not Available

Abstract:
Text: CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for switching applications requiring , 100 UNITS V V R3 (9-May 2011) CMLD6001 SURFACE MOUNT DUAL, ISOLATED ULTRA LOW LEAKAGE


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PDF CMLD6001 CMLD6001 OT-563 100mA
2005 - marking code pa sot-26

Abstract:
Text: MARKING CODE CMKD6001: K01 CMOD6001: 61 CMLD6001 : C6D CMLD6001DO : C60 For complete package , Diode in a SOD-523 100 250 0.5 75 1.1 100 3.0 2.0 CMLD6001 Dual, Diodes in a SOT-563 100 250 0.5 75 1.1 100 3.0 2.0 CMLD6001DO Dual, Opposing


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PDF OT-26, OT-23, OT-363, OD-323, OD-523 OT-563 OT-26 OT-23 OT-363 OD-323 marking code pa sot-26 smd SOT26 CMDD6001 SMD MARKING CODE 26 sot-363 smd transistor marking PA sot 26 smd marking 30 SMD MARKING CODE on semiconductor marking code sot marking CODE R SMD DIODE SOD 23
11x11

Abstract:
Text: PROCESS CPD91 Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 145 Adams Avenue Hauppauge, NY


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PDF CPD91 CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 11x11 CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91 diode
CMDD6001

Abstract:
Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631


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PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 Aug91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91V
2010 - CMDD6001

Abstract:
Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 137,880 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 R2 (3-August 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD91V


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PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91V r2 137
marking code fs

Abstract:
Text: CMLD6001 DO SURFACE MOUNT PICO m inr DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6OOIDO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switch ing applications requiring extremely low leakage. MARKING CODE: C60 SYMBOL Continuous Reverse Voltage Peak


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PDF CMLD6001 CPD91) OT-563 OT-563 marking code fs
CPD91V

Abstract:
Text: PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 145 Adams Avenue Hauppauge, NY


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PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001
4E smd diode

Abstract:
Text: CMLD4448 CMLD4448DO CMLD6001 CMLD6001 DO CMLD6263 CMLD6263A CMLD6263C CMLD6263S CMLD6263DO CMLSH


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PDF chMXD2004TO CMSH1-40M OT-89 4E smd diode Zener diode quad surface mount smd schottky diode A2 SOD-123 SMD transistor 123 Schottky Diode SOT-89 composition of material used in zener diode CMXZ47VTO CMXZ30VTO CMXZ2V4TO CMPZDC47V
3SMC30A

Abstract:
Text: ) CMLD6001 CMLD6001DO (2x) CMDD6001 (1x) CMKD6001 (3x) CMXD6001 (3x) CMPD6001A CMPD6001C , CMPD6001A: Dual, Common Anode CMPD6001C: Dual, Common Cathode CMPD6001S: Dual, In Series CMLD6001 : Dual, Isolated CMLD6001DO : Dual, Opposing, Isolated CMKD6001, and CMXD6001: Triple, Isolated 100 250


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PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 3SMC30A CMPZ4614 CMSD4448 P6SMB56CA sod-80 stabistor STB-400 CMOZ20V CMZ5945B 882L 3smc60ca
CMR1U-02M

Abstract:
Text: CMLD2004C CMLD2004S CMLD4448DO CMLD6001 CMLD6001 DO CMLD6263 CMLD6263A CMLD6263C CMLD6263DO , rt N u m b e r CMLD2004C CMLD2004S CMLD4448DO CMLD6001 CMLD6001 DO CMLD6263 CMLD6263A


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PDF 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M CMR1U-02M CMSD4448 CMSH3-40 CMPZ4124 SO3903 CMPZDC47V CMPZ4614 CMSD2004S CMSH1-100M CMSH1-20M
BF244 datasheet

Abstract:
Text: No file text available


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PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2N3304 2n5248 bf256 2n5910
BZX 48c 6v8

Abstract:
Text: P 6SM B56A 1.5SM C 56A 1.5SM C 56C A P 6SM B56C A C M PT591E CMLD6001 DO CM DD6001


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PDF 2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 7006S CMXZ11VTO code Cj5 PT2369
CMZ5930B

Abstract:
Text: No file text available


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PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMZ5930B CMPZ4124 CMZ5945B CMZ5947B CMZ5923B Transistor 1602c CMSD2004S CMPZ4621 CMPZ4618 CMPZ4614
2011 - FSQ510 Equivalent

Abstract:
Text: No file text available


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PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 Precision triac control thermostat ZIGBEE interface with AVR ATmega16 thyristor t 558 f eupec transistor a564 gw 5819 diode A564 transistor BSM25GP120 b2
2008 - CMLD6001DO

Abstract:
Text: Central CMLD6001DO TM Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for , CMLD6001DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES


Original
PDF CMLD6001DO OT-563 100mA CMLD6001DO
Not Available

Abstract:
Text: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for , ) CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES SOT


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PDF CMLD6001DO OT-563 Operat250 100mA
2014 - Not Available

Abstract:
Text: CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains two (2) isolated opposing configuration, silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an SOT-563 surface mount package. These devices are designed for , ) CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE SOT


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PDF CMLD6001DO OT-563 100mA
2003 - c60 equivalent

Abstract:
Text: CMLD6001DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed , V V pF µs R0 (3-November 2003) Central TM CMLD6001DO SURFACE MOUNT PICOminiTM


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PDF CMLD6001DO OT-563 100mA c60 equivalent CMLD6001DO
2011 - Not Available

Abstract:
Text: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching , R3 (9-May 2011) CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON


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PDF CMLD6001DO OT-563 100mA
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