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PMCM950ENEZ Trench MOSFET N-Channel 60V 9-Pin WLCSP - Tape and Reel (Alt: PMCM950ENEZ)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet PMCM950ENEZ Reel 0 35 Weeks, 1 Days 4,500 - - - - $0.1619 More Info
Newark element14 PMCM950ENEZ Cut Tape 0 5 $0.54 $0.451 $0.275 $0.212 $0.212 More Info
element14 Asia-Pacific PMCM950ENEZ 0 5 - $1.03 $0.49 $0.31 $0.27 More Info
Farnell element14 (2) PMCM950ENEZ 0 5 - £0.608 £0.287 £0.181 £0.155 More Info
PMCM950ENEZ 0 5 - £0.608 £0.287 £0.181 £0.155 More Info
Greenlee Textron Inc
CM950 MULTIMETER, DIGITAL, CLAMP; DMM Functions:AC/DC Current, AC/DC Voltage, Continuity, Frequency, Resistance; Current Measure AC Max:600A; Voltage Measure AC Max:600V; Voltage Measure DC Max:600V; Resistance Measure Max:400ohm
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 CM950 Bulk 0 1 - - - - - More Info

CM-950 datasheet (2)

Part Manufacturer Description Type PDF
CM-950 Greenlee Textron Equipment - Electrical Testers, Current Probes, Test and Measurement, CLAMPMETER Original PDF
CM-950-C Greenlee Textron Equipment - Electrical Testers, Current Probes, Test and Measurement, CLAMPMETER Original PDF

CM-950 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - Not Available

Abstract: No abstract text available
Text: -900 • CM-950 Digital Clamp-on Meters Medidores digitales con pinza Multimètres numériques à , Textron 3/03 Description The Greenlee CM-900 and CM-950 Digital Clamp-on Meters are hand-held , , frequency, and resistance. They also verify continuity. The CM-950 is a true RMS reading meter , Greenlee CM-900 and CM-950 Digital Clamp-on Meters. Keep this manual available to all personnel , registered trademark of Greenlee Textron. KEEP THIS MANUAL 2 CM-900 • CM-950 Important Safety


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PDF CM-900 CM-950
2004 - Not Available

Abstract: No abstract text available
Text: package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm). Lens , · Filter designed for 950 nm transmission · Lead-free device Applications Infrared remote , Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5


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PDF BPV22F BPV22F 95ake D-74025 26-Mar-04
2004 - Not Available

Abstract: No abstract text available
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the , Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 10 V VR = 5 V, = 870 nm VR = 5 V, = 950 nm 2 2 2 VISHAY


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PDF BPV22NF D-74025 26-Mar-04
2004 - BPV22

Abstract: BPV22F
Text: package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm). Lens , filter Filter designed for 950 nm transmission Lead-free device 2 Applications Infrared remote , Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5


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PDF BPV22F BPV22F D-74025 20-Apr-04 BPV22
2005 - BPV22F

Abstract: No abstract text available
Text: itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm). Lens , response times Plastic package with IR filter Filter designed for 950 nm transmission Lead-(Pb)-free , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 370 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 75 A Reverse Light Current Ee = 1 mW


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PDF BPV22F BPV22F D-74025 10-May-05
2004 - Not Available

Abstract: No abstract text available
Text: epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm , Plastic package with IR filter Filter designed for 950 nm transmission 2 · Option \"L\": long lead , Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5


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PDF BPV23F D-74025 26-Mar-04
2004 - Not Available

Abstract: No abstract text available
Text: epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm , Plastic package with IR filter Filter designed for 950 nm transmission Option "L": long lead package , Time Cut-Off Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm2, = 950


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PDF BPV23F D-74025 20-Apr-04
2004 - TSH-Series

Abstract: No abstract text available
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the , Time Cut-Off Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 10 V VR = 5 V, = 870 nm VR = 5 V, = 950 nm 2 2


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PDF BPV22NF D-74025 26-Mar-04 TSH-Series
2005 - BPV22NF

Abstract: BPV23FL
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 370 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 80 µA Reverse Light Current Ee = 1 mW/cm , = 870 nm, VR = 5 V Ira 85 µA Temp. Coefficient of Ira Ee = 1 mW/cm2, = 950


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PDF BPV22NF D-74025 08-Mar-05 BPV23FL
2005 - BPV23F

Abstract: BPV23FL
Text: epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 , times Low junction capacitance Plastic package with IR filter Filter designed for 950 nm transmission , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 390 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 60 µA Reverse Light Current Ee = 1


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PDF BPV23F D-74025 08-Mar-05 BPV23FL
2004 - Not Available

Abstract: No abstract text available
Text: epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm , Plastic package with IR filter Filter designed for 950 nm transmission Option \"L\": long lead package , Time Cut-Off Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm2, = 950


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PDF BPV23F D-74025 20-Apr-04
2005 - Application of INFRARED REMOTE CONTROL

Abstract: Photodiode vishay BPV22F
Text: itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters ( p = 950 nm). Lens , response times Plastic package with IR filter Filter designed for 950 nm transmission Lead-(Pb)-free , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 370 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 75 A Reverse Light Current Ee = 1 mW


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PDF BPV22F BPV22F 08-Apr-05 Application of INFRARED REMOTE CONTROL Photodiode vishay
2004 - Not Available

Abstract: No abstract text available
Text: an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters ( p = 950 nm). The large , filter ( = 950 nm) Suitable for near infrared radiation Lead-free device Applications High speed , Bandwidth Noise Equivalent Power Rise Time Fall Time VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5 V 2 2 2 2 VISHAY


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PDF BPW41N BPW41N D-74025 29-Mar-04
2005 - BPV23FL

Abstract: BPV23NF
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 390 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 65 µA Reverse Light Current Ee = 1 mW/cm , = 870 nm, VR = 5 V Ira 65 µA Temp. Coefficient of Ira Ee = 1 mW/cm2, = 950


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PDF BPV23NF D-74025 08-Mar-05 BPV23FL
2004 - 005MW

Abstract: BPW85
Text: Cut-Off Frequency Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA , V E e = 1 mW/cm 2 i = 950 nm 0 20 40 60 80 100 0 20 40 60 80 100 , 0.01 0.01 94 8271 = 950 nm 0.1 1 10 Ee ­ Irradiance ( mW/cm2) V CE = 5V Tamb - Ambient , ( mA) 10 8 6 4 2 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) f = 1 MHz BPW 85 A = 950 , Turn on / Turn off Time ( µ s ) 10 8 V CE = 5 V R L = 100 = 950 nm 6 1 0.2mW/cm 2


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PDF BPW85 BPW85 D-74025 29-Mar-04 005MW
2005 - BPV22NF

Abstract: BPV23FL 875NM
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to , Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, = 950 nm Vo 370 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , = 950 nm Ik 80 µA Reverse Light Current Ee = 1 mW/cm , = 870 nm, VR = 5 V Ira 85 µA Temp. Coefficient of Ira Ee = 1 mW/cm2, = 950


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PDF BPV22NF 08-Apr-05 BPV23FL 875NM
2004 - Not Available

Abstract: No abstract text available
Text: emitters ( p = 950 nm, srel( = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the , Cut-Off Frequency = 950 nm VR = 10 V, = 950 nm VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm VR = 12 V, RL = 1 k, = 870 nm VR = 12 V, RL = 1 k, = 950 nm Test condition Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 10 V VR = 5 V, = 870 nm VR = 5 V, = 950 nm 2 Symbol


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PDF BPV23NF D-74025 26-Mar-04
2005 - bpw 104

Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
Text: /cm2, = 950 nm, IC = 0.1 mA Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 ton 2.0 , 2.5 mA BPW85B Ica 1.5 2.5 4.0 mA BPW85C Ee = 1 mW/cm2, = 950 nm, VCE = 5 , ) I ca rel - Relative Collector Current 2.0 1.8 V CE = 5 V E e = 1 mW/cm 2 = 950 nm 1.6 , BPW85C BPW85A 0.1 V CE = 5V = 950 nm 0.01 0.01 0.1 1 100 10 V CE ­ , 1 0.2mW/cm 2 0.1mW/cm 2 0.05mW/cm 2 0.1 BPW 85 C = 950 nm 1 100 10 V CE ­


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PDF BPW85 BPW85 2002/95/EC 2002/96/EC 08-Apr-05 bpw 104 bpw 50 BPW85A BPW85B BPW85C
2005 - Not Available

Abstract: No abstract text available
Text: Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Ee = 1 mW/cm2, = 950 nm , condition Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Part BPW85A BPW85B BPW85C Symbol Ica Ica Ica Min 0.8 1.5 3.0 , 0.6 0 20 40 60 80 100 V CE = 5 V E e = 1 mW/cm 2 = 950 nm = 950 nm 0.01 0.1 1 10 100 94 8239 , 0.01 0.01 94 8271 = 950 nm 0.1 1 10 Ee ­ Irradiance ( mW/cm2) V CE = 5V 0.01 0.1 94 8277 BPW 85 C = 950 nm 1 10 100 V CE ­ Collector Emitter Voltage ( V ) Figure 4. Collector Light


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PDF BPW85 BPW85 2002/95/EC 2002/96/EC D-74025 08-Mar-05
2004 - Not Available

Abstract: No abstract text available
Text: specified Parameter Open Circuit Voltage Test condition EA = 1 klx Ee = 1 mW/cm , = 950 nm Short Circuit Current EA = 1 klx Ee = 1 mW/cm , = 950 nm Reverse Light Current EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR =5V Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity , 950 nm VR = 20 V, = 950 nm VR = 20 V, = 950 nm VR = 50 V, RL = 50 , = 820 nm VR = 50 V, RL = 50 , = 820 nm VR = 5 V, = 950 nm s() p 0.5 NEP D* tr tf 0.55 ± 20 920 570 to 1040 72 3x10-14 3x1012


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PDF BPV10 BPV10 78mm2 D-74025 24-Mar-04
2004 - 05mW

Abstract: No abstract text available
Text: Cut-Off Frequency Ee = 1 mW/cm2, = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA , Characteristics Parameter Collector Light Current Test condition Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Part BPW85A , 0.8 0.6 0 20 40 60 80 100 V CE = 5 V E e = 1 mW/cm 2 i = 950 nm BPW 85 B Ee=1mW/cm 2 0.5mW/cm 2 1 0.2mW/cm 2 0.1mW/cm 2 0.05mW/cm 2 0.1 = 950 nm 0.01 0.1 1 10 100 94 8239 Tamb - , Ee =1mW/cm 2 0.5 mW/cm 2 1 0.2mW/cm 2 0.1mW/cm 2 0.05mW/cm 2 0.1 BPW 85 C = 950 nm 1 10 100


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PDF BPW85 BPW85 D-74025 02-Jun-04 05mW
15JUL

Abstract: s42f diode s42f
Text: emitters (X p = 950 nm, sre](X = 875 nm) > 90 9c). Lens radius and chip position are perfectly matched to , . f= 1 MHz Rs Ee = 1 mW/cm2. X = 950 nm v, Ee = 1 mW/cm-, X = 950 nm TKvo Ee = 1 mW/cm-, X = 950 nm Ik Ee = 1 mW/cm-, X = 870 nm. ira Vr=5V 1 TKIra Ee = 1 mW/cm-, X = 950 nm. V r - 10 V VR = 5 V, X = 870 nm s(>0 s(X) VR = 5 V. k = 950 nm 950 nm V r= 10V. X=950nm VR=10V. X=950nm VR=10V, R| =lkQ.


OCR Scan
PDF BPV23NFL BPV23NFL l5-Jul-96 15-Jul-96 15JUL s42f diode s42f
2007 - Not Available

Abstract: No abstract text available
Text: wavelength 870 nm or 950 nm. 20535 Features · Large radiant sensitive area (A = 7.5 mm2) · Wide angle , equivalent power Rise time Fall time VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm , mV mV/K µA %/K µA deg nm nm W/ Hz ns ns Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5 , Dark Current (nA) 1.2 100 VR = 5 V = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80


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PDF TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05
2007 - TEMD5110

Abstract: TEMD5110X01
Text: 950 nm. 20535 Features Applications · Product designed and qualified acc. AEC-Q101 for , Min Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm , = 950 nm Ik 50 µA Temperature coefficient of Ik Ee = 1 mW/cm , = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm , = 950 nm, VR = 5 V 55 µA 2 2 2


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PDF TEMD5110X01 AEC-Q101 TEMD5110X01 08-Apr-05 TEMD5110
2008 - Not Available

Abstract: No abstract text available
Text: an infrared bandpass filter matched to IR Emitters operating at wavelength 870 nm or 950 nm. 20535 , V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm Test condition Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm , = 950 nm 2 2 2 Symbol Vo TKVo Ik TKIk Ira , ns Ee = 1 mW/cm , = 950 nm Ee = 1 mW/cm , = 950 nm, VR = 5 V 45 55 ± 65 940 790 to 1050 4x , 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 Tamb - Ambient


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PDF TEMD5110X01 AEC-Q101 TEMD5110X01 18-Jul-08
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