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841484DKILFT Integrated Device Technology Inc VFQFPN-32, Reel
841484DKILF Integrated Device Technology Inc VFQFPN-32, Tray
LM431CIZ/LFT1 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92
PT4148C Texas Instruments 1-OUTPUT 12.5W DC-DC REG PWR SUPPLY MODULE, ROHS COMPLIANT, SMD-6
TMS664414-8ADGE Texas Instruments 16MX4 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54
TMS664414-8DGE Texas Instruments 16MX4 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54

CJ 4148 ZENER Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - Not Available

Abstract: No abstract text available
Text: noted) SYMBOL LS 4148 UNITS VR M 100 V C And f >50Hz IF (A V ) 150 mA C , Capacitance at VF =VR =0 CJ 4 pF Maximum Reverse Recovery Time From IF =-IR =10mA to IR R =-1mA , = 25 O O O C nA µA µA O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From


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PDF LS4148 2002/95/EC MIL-STD-750,
2009 - CJ 4148

Abstract: MELF pad layout LS4148 MELF 4148
Text: LS 4148 UNITS VR M 100 V C And f >50Hz IF (A V ) 150 mA C IF S M 500 , =VR =0 CJ 4 pF Maximum Reverse Recovery Time From IF =-IR =10mA to IR R =-1mA ,VR =6V RL , O O C nA µA µA O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR


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PDF LS4148 2002/95/EC MIL-STD-750, CJ 4148 MELF pad layout LS4148 MELF 4148
Not Available

Abstract: No abstract text available
Text: millimeters SYMBOL DL 4148 DL4150 DL4151 DL4443 DL4454 UNITS VRRfV 100 50 100 , nS Typical Junclion Capacitance Cj 4.0 : pF T j .Tstg -65 1 4 200 D 1 U


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PDF DL4148 DL4454 DL-35 MlL-STD-750, L4148 L4454)
2003 - D4148

Abstract: O ssi SOT-23
Text: t e A b o ve 2 5 O C O S YM B O L M M B D 4148 A2 M M B D 4448 A3 75 100 50 75 150 , I R CJ TR R R JA TJ 2. 5@ 75V 4. 0 4. 0 357 -5 5 t o +150 1. 0@ 75V 2. 0 6. 0 O uA pF ns C /W O C SINGLE NOTE: 1. CJ at VR=0, f=1MHZ 2.From IF=10mA to IR=1mA, VR


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PDF MMBD4148/MMBD4448/BAS16 250mWatts OT-23 MIL-STD-202G D4148 O ssi SOT-23
2009 - CJ 4148

Abstract: No abstract text available
Text: VR M C And f >50Hz IF (A V ) IF S M PT O T VF LS 4148 100 150 500 500 1.0 25 5 50 4 4 300 -65 to , Typical Thermal Resistance Junction Temperature and Storage Temperature Range IR CJ trr RJ A TJ ,TS C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR=6Volts, RL=100 STAD-FEB


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PDF LS4148 2002/95/EC MIL-STD-750, CJ 4148
Not Available

Abstract: No abstract text available
Text: RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) SYMBOL LS 4148 UNITS , =20V at VR =75V at VR =20V ,TJ= 150O C IR 25 5 50 Maximum Capacitance at VF =VR =0 CJ , C nA µA µA O C/W O C NOTE: 1. CJ at VR=0, f=1MHZ 2. From IF=10mA to IR=1mA, VR


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PDF LS4148 MIL-STD-750,
1999 - 1N914 CJ 4148

Abstract: No abstract text available
Text: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage High speed switching DO-34 / DO-35 * High current capability * High reliability MECHANICAL DATA , Junction Capacitance CJ 4.0 TJ,TSTG -65 to + 200 4.0 4.0 4.0 mW 1.0/30 1.0/100


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PDF 1N914 DO-34 DO-35 MIL-STD-202E, SbA766gDrSbA8 1N914 CJ 4148
1N4150

Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4154 1N4448 1N4454
Text: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage High speed switching DO-34 / DO-35 * High current , trr Typical Junction Capacitance CJ 4.0 TJ,TSTG -65 to + 200 Operating and Storage


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PDF 1N914 DO-34 DO-35 MIL-STD-202E, SbA766gDrSbA8 1N4150 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4154 1N4448 1N4454
TVS 200 diode

Abstract: tvs-diode TVS Diode SMD Dioden suppressor diode smd P4KE440CA 440CA 1.5KE440CA TVS APPLICATION TGL41-150CA
Text: Zener -/TVS-diode: Cj ~ 10 nF 1/ Cj ~ 3 Ohm => short! SDA4AK Cj very low due to series connection of , ? IF VC VBR VWM ID IT VF IPP · Kennlinie wie eine Zenerdiode Curve like Zener diode · , ! Transient Voltage Suppressor V03 2005, US TVS oder Zenerdiode TVS versus Zener diode TVS Zener , Begrenzerspannung · Ptot Statische Verlustleistung Stand-off voltage Clamping voltage Zener voltage , bidirectional TVS replaces 2 anti serial Zener diodes! on request: 2 in 1! · 2 in 1! Gate-Schutz


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PDF
2014 - Not Available

Abstract: No abstract text available
Text: CJ - 4 pF trr - 4 ns IR VR=75V VR=0 f=1.0MHz (Note 3) Note 1 , Device Code from " 4148 " thru "914B". Note 2: Manufacture special control, if empty means no special


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PDF LL4148/LL4448/LL914B 270oC/10s S1408022
4j zener

Abstract: No abstract text available
Text: /32" from case for 10 seconds 230°C B. Current. 1. Maximum Zener Current, Steady State Column V mA , . Static. 1. Zener Voltage Column I V Ir = Column II mA; T a 25*C. Free air. 2. Zener Voltage Temperature Coefficient Column IV /%/ C Ir = Column II mA T to /150 C. Free air (25 C reference) B. Dynamic. 1. Zener , II u ■H C U X) I-I tt CJ (U > n c >- M 3 (9r-l UCi C u c Cö 0' E u ■P (U U-l • i-s r-l (VW c/1 H» O E QJ O O O O O-i H CJ -^ u t-i ■H


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PDF T0DD37Ã 00D0QS0 1NU295A 4j zener
DZ2J051

Abstract: ZKE00082BED cu marking code zener
Text: Features Excellent rising characteristics of zener current Iz Eco-friendly Halogen-free package , Pin 1. Cathode 2. Anode Absolute Maximum Ratings Ta = 25°C Marking Symbol: CJ , CU , 1.0 V 5.36 V Forward voltage VF IF = 10 mA Zener voltage *1, 2, 4 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA 60 W Zener rise operating resistance , coefficient of zener voltage *3 SZ IZ = 5 mA 4.85 0.7 mV/°C Note) 1. Measuring methods are


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PDF 2002/95/EC) DZ2J051 DZ2J051 ZKE00082BED cu marking code zener
2003 - Not Available

Abstract: No abstract text available
Text: PJSMDA05-6 HEX UNIDIRECTIONAL TVS/ ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Hex TVS/ Zener , substantial board space reduction. 5 4 8 TVS\ ZENER 1 • Improved Low Leakage Current, Maximum , Cj Off-State Junction Capacitance Cj IBR = 1mA VRWM = 5V TA = 25OC IPP = 5A 8 x 20 µsec , PJSMDA05-6 80 18 Percent of Ipp 8x20 m sec Peak Current, Amps 26 TVS\ ZENER RATING AND CHARACTERISTIC CURVES PJSMDA05-6 TVS\ ZENER TYPICAL APPLICATION CONFIGURATION RS232 Pinout Name CD


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PDF PJSMDA05-6 200pF RS232 RS232
DZ2S051

Abstract: DZ2J051 ZKE00099BED cu marking code zener
Text: SSMini2 package Package Features Excellent rising characteristics of zener current Iz , °C Marking Symbol: CJ , CU Packaging Parameter Symbol Rating Unit IFRM 200 mA PT , Zener voltage *1, 2, 4 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA 60 W Zener rise operating resistance RZK IZ = 1.0 mA 500 W Reverse current IR VR = 2.0 V 1.0 mA Temperature coefficient of zener voltage *3 SZ IZ = 5 mA 4.85 0.7 mV/°C


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PDF 2002/95/EC) DZ2S051 DZ2J051 DZ2S051 ZKE00099BED cu marking code zener
ir sensor circuit diagram using LM358

Abstract: LM358T N14A LM336 ADC0833CJ ADC0833CCN ADC0833CCJ ADC0833BJ ADC0833BCN ADC0833BCJ
Text: (Note 9) ADC0833BCJ/CCJ/BJ/ CJ ADC0833BCN/CCN 7.0 7.0 2.6 2.6 2.6 k n kO Maximum Total Ladder Resistance (Note 9) ADC0833BCJ/CCJ/BJ/ CJ ADC0833BCN/CCN 7.0 7.0 11.8 10.8 11.8 kn kn Minimum Common-Mode Input Range (Note 10) ADC0833BCJ/CCJ/BJ/ CJ ADC0833BCN/CCN All MUX Inputs and COM Input GND-0.05 GND-0.05 QND-0.05 V V Maximum Common-Mode Input Range (Note 10) ADC0833BCJ/CCJ/BJ/ CJ ADC0833BCN/CCN All MUX Inputs and COM Input Vcc + O.05 Vcc+0.05 Vcc + 0.05 V V DC Common-Mode Error ADC0833BCJ/CCJ/BJ/ CJ


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PDF ADC0833 TL/H/5607-19 ADC0833 ADC6833 TL/H/5607-13 1N914 TUH/5607-2Q ADC0B31 ADC0833BCJ ir sensor circuit diagram using LM358 LM358T N14A LM336 ADC0833CJ ADC0833CCN ADC0833CCJ ADC0833BJ ADC0833BCN
PJSMS05

Abstract: ZENER 26 24A8 tvs 110 pc 15 S6050
Text: PJSMS05 This Quad TVS/ Zener Array has been designed to Protect Sensitive Equipment against , Capacitance @ 0Vdc of 200pF 6 · IEC 61000-4-2 ESD 15kV air, 8kV contact Compliance 5 TVS\ ZENER , , 8x20µsec Waveform · Industry Standard SMT Package SOT23-6 Lead PJSMS05 PRELIMINARY QUAD TVS/ ZENER , Clamping Voltage Vc Clamping Voltage Vc Off-State Junction Capacitance Cj Off-State Junction Capacitance Cj IBR = 1mA VRWM = 5V TA = 25OC Ipp = 5A 8 x 20 µsec Ipp = 24A 8 x 20


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PDF PJSMS05 200pF 8x20msec PJSMS05 ZENER 26 24A8 tvs 110 pc 15 S6050
2012 - Not Available

Abstract: No abstract text available
Text: STZ23C5V6WS SURFACE MOUNT ZENER DIODES FEATURES · Planar die construction · 150mW Power , otherwise noted) PARAMETER SYMBOL CONDITION Nom. Zener Voltage VZ I Z=5mA 5.6 VALUE Min. 5.31 1.0 15 60 17 , Resistance Typical Capacitance Junction IR ZZT ZZK CJ VR=2.5V I Z=5mA I Z=0.5mA f=1MHZ VR=5V NOTES , 75 100 125 150 CJ , Junction Capacitance (pF) 175 100 10 1 0.1 1 10 TA , Ambient , (mV/°C) 1.5 1 0.5 0 -0.5 -1 -1.5 -2 -2.5 -3 1 10 100 1000 TJ = 25 to 150 °C IZ, Zener Current (mA


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PDF STZ23C5V6WS 150mW IEC-61000-4-2 2011/65/EU IEC61249 OD-323, MIL-STD-750, 2013-REV
2013 - Not Available

Abstract: No abstract text available
Text: STZ23C5V6WS SURFACE MOUNT ZENER DIODES FEATURES • Planar die construction • 150mW Power , 5.6 5.31 5.92 V Zener Voltage VZ I Z=5mA Maximum DC Reverse Current IR VR , I Z=0.5mA 60  Typical Capacitance Junction CJ f=1MHZ VR=5V 17 pF NOTES , 125 150 CJ , Junction Capacitance (pF) RATING AND CHARACTERISTIC CURVES 100 10 1 0.1 , 4 6 VZ, Zener Voltage (V) Fig.5 Typical Zener Characteristics August 29,2013


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PDF STZ23C5V6WS 150mW IEC-61000-4-2 2011/65/EU IEC61249 OD-323, 2013-REV
2012 - BZT52-B14

Abstract: No abstract text available
Text: BZT52-B2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 V olts POWER 410 , Power Dissipation · Zener Voltages from 2.4~75V · Ideally Suited for Automated Assembly Processes · Lead , board October 19,2011-REV.03 PAGE . 1 BZT52-B2V4 SERIES Nominal Zener Voltage Part Number Nom. V 410 mWatts Zener Diodes BZT52-B2V4 BZT52-B2V7 BZT52-B3 BZT52-B3V3 BZT52-B3V6 BZT52-B3V9 BZT52-B4V3 , 28C WT WU WW WX WY WZ XA X2 X3 X4 X5 VZ @ IZT Min. V Max. V Max. Zener Impedance ZZT @ IZT mA ZZK @


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PDF BZT52-B2V4 410mW 2002/95/EC IEC61249 OD-123, MIL-STD-750, 2011-REV RB500V-40 BZT52-B14
2012 - Not Available

Abstract: No abstract text available
Text: ® MMSZ4681 – MMSZ4717 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features , Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application Plastic Material , 8 9 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 10 100 18 33 27 , 75 50 Test Current IZ 12 22 Test Current IZ 15 IZ, ZENER CURRENT (µA) 10 IZ, ZENER CURRENT (µA) 75 6V2 8V2 0.1 0 25 0 0 5 10 15 20 25 30 35 40


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PDF MMSZ4681 MMSZ4717 500mW OD-123 OD-123, MIL-STD-202,
2012 - Not Available

Abstract: No abstract text available
Text: STZ23C5V6TS SURFACE MOUNT ZENER DIODES FEATURES · Planar die construction · 150mW Power , otherwise noted) PARAMETER SYMBOL CONDITION Nom. Zener Voltage VZ I Z=5mA 5.6 VALUE Min. 5.31 1.0 15 60 17 , Resistance Typical Capacitance Junction IR ZZT ZZK CJ VR=2.5V I Z=5mA I Z=0.5mA f=1MHZ VR=5V NOTES , 75 100 125 150 CJ , Junction Capacitance (pF) 175 100 10 1 0.1 1 10 TA , Ambient , , Zener Current (mA) sZ,TEMPERATURE COEFFICIENT(mV/°C) TJ = 25°C 8 6 4 2 0 0.00 1.5 1 0.5 0 -0.5


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PDF STZ23C5V6TS 150mW IEC-61000-4-2 2011/65/EU IEC61249 OD-523, MIL-STD-750, 2013-REV
2013 - Not Available

Abstract: No abstract text available
Text: circuit DZ2J051 in SSMini2 type package  Features  Excellent rising characteristics of zener current Iz  Low zener operating resistance RZ  Halogen-free / RoHs compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: CJ , CU  Packaging DZ2S051×0L Embossed type , VF IF = 10 mA Zener voltage *1, 2, 4 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA 60 W Zener rise operating resistance RZK IZ = 1.0 mA 500 W Reverse


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PDF DZ2S051 DZ2J051 UL-94 DZ2S051Ã
2012 - SOD 323 MARKING CODE WU

Abstract: No abstract text available
Text: BZT52-B2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 V olts POWER 410 , Power Dissipation · Zener Voltages from 2.4~75V · Ideally Suited for Automated Assembly Processes · Lead , board October 19,2011-REV.03 PAGE . 1 BZT52-B2V4 SERIES Nominal Zener Voltage Part Number Nom. V 410 mWatts Zener Diodes BZT52-B2V4 BZT52-B2V7 BZT52-B3 BZT52-B3V3 BZT52-B3V6 BZT52-B3V9 BZT52-B4V3 , 28C WT WU WW WX WY WZ XA X2 X3 X4 X5 VZ @ IZT Min. V Max. V Max. Zener Impedance ZZT @ IZT mA ZZK @


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PDF BZT52-B2V4 410mW 2002/95/EC IEC61249 OD-123, MIL-STD-750, 2011-REV OD-123 SOD 323 MARKING CODE WU
2012 - BZT52-B14

Abstract: No abstract text available
Text: BZT52-B2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 V olts POWER 410 , Power Dissipation · Zener Voltages from 2.4~75V · Ideally Suited for Automated Assembly Processes · Lead , Nominal Zener Voltage Part Number Nom. V 410 mWatts Zener Diodes BZT52-B2V4 BZT52-B2V7 BZT52-B3 BZT52-B3V3 , WL WM 17C WN WO WP WR WS 28C WT WU WW WX WY WZ XA X2 X3 X4 X5 VZ @ IZT Min. V Max. V Max. Zener , 100 TA = 25°C CJ , Junction Capacitance (pF) 0.6 PD,Power Dissipation (W) 1000 2.4V 100


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PDF BZT52-B2V4 410mW 2002/95/EC IEC61249 OD-123, MIL-STD-750, 2012-REV RB500V-40 BZT52-B14
2011 - Not Available

Abstract: No abstract text available
Text: BZT52-B2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 , Power Dissipation · Zener Voltages from 2.4~75V · Ideally Suited for Automated Assembly Processes · In , . Mounted on 48cm2 FR-4 PCB board October 19,2011-REV.03 PAGE . 1 BZT52-B2V4 SERIES Nominal Zener Voltage Part Number Nom. V 410 mWatts Zener Diodes BZT52-B2V4 BZT52-B2V7 BZT52-B3 BZT52-B3V3 BZT52-B3V6 , WM 17C WN WO WP WR WS 28C WT WU WW WX WY WZ XA X2 X3 X4 X5 VZ @ IZT Min. V Max. V Max. Zener


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PDF BZT52-B2V4 410mW 2002/95/EC OD-123, MIL-STD-750, 2011-REV OD-123
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