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CGH40006S Wolfspeed Richardson RFPD 200 $29.51 $29.51

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CGH40006S datasheet (2)

Part Manufacturer Description Type PDF
CGH40006S Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 3X3QFN Original PDF
CGH40006S-KIT Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, FET RF HEMT 28V 100MA 440203 Original PDF

CGH40006S Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Not Available

Abstract: No abstract text available
Text: S-parameter of the CGH40006S in the CGH40006S-TB 16 14 12 Gain (dB) 10 8 6 4 , CGH40006S-TB 0 -2 -4 -6 -8 Gain (dB) -10 -12 -14 -16 -18 -20 -22 CGH40006S - S11 -24 , as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. Pout Gain IDQ = , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD


Original
PDF CGH40006S CGH40006S CGH40006S, CGH40
2010 - RO5880

Abstract: CGH40006S 48 Ohms Resistors CGS CGH40006S-TB transistor 0879
Text: at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 Gain (dB) 8


Original
PDF CGH40006S CGH40006S CGH40006S, CGH40 RO5880 48 Ohms Resistors CGS CGH40006S-TB transistor 0879
2010 - Not Available

Abstract: No abstract text available
Text: S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 4 CGH40006S - , Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-TB 0 -2 , Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD =EFF 28 vs V,output IDQ , ) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB , (GHz) 4.5 5.0 5.5 6.0 Output Power vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm


Original
PDF CGH40006S CGH40006S CGH40006S, CGH40
2010 - J945

Abstract: No abstract text available
Text: Frequency at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 , Frequency of the CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 , CGH40006S in the CGH40006S-TB Efficiency vs. Pin mA VDD =Drain 28 V, IDQ = 100 100% 90% 80% 70% 2.0 GHz 3.0


Original
PDF CGH40006S CGH40006S CGH40006S, CGH40 J945
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