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CGH40 datasheet (24)

Part Manufacturer Description Type PDF
CGH40006P Cree RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG Original PDF
CGH40006P-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P Original PDF
CGH40006S Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 3X3QFN Original PDF
CGH40006S-KIT Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, FET RF HEMT 28V 100MA 440203 Original PDF
CGH40010 Cree 10 W, RF Power GaN HEMT Original PDF
CGH40010F Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG Original PDF
CGH40010F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010 Original PDF
CGH40010P Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196 Original PDF
CGH40025F Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original PDF
CGH40025F Cree 25 W, RF Power GaN HEMT Original PDF
CGH40025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original PDF
CGH40035F Cree RF FETs, Discrete Semiconductor Products, TRANS 35W RF GAN HEMT 440193 PKG Original PDF
CGH40035F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40035 Original PDF
CGH40045 Cree 45 W, RF Power GaN HEMT Original PDF
CGH40045F Cree RF FETs, Discrete Semiconductor Products, TRANS 45W RF GAN HEMT 440193 PKG Original PDF
CGH40045F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40045 Original PDF
CGH40090PP Cree RF FETs, Discrete Semiconductor Products, TRANS 90W RF GAN HEMT 440199 PKG Original PDF
CGH40090PP-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40090 Original PDF
CGH40120F Cree RF FETs, Discrete Semiconductor Products, TRANS 120W RF GAN HEMT 440193PKG Original PDF
CGH40120F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40120 Original PDF

CGH40 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - CGH40006P-TB

Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Text: at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V -2 16 -4 14 , 1.0 2.0 3.0 Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB , Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I VDD = 28 V,power, 2,3,4,5 & mA = 100 6 , as a Function of Frequency of the CGH40006P in the CGH40006P-TB Eff vs V, 2,3,4,5 100 VDD = 28Pout


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PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006
2010 - J945

Abstract: No abstract text available
Text: Frequency at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 , Frequency of the CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 , CGH40006S in the CGH40006S-TB Efficiency vs. Pin mA VDD =Drain 28 V, IDQ = 100 100% 90% 80% 70% 2.0 GHz 3.0


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PDF CGH40006S CGH40006S CGH40006S, CGH40 J945
2010 - Not Available

Abstract: No abstract text available
Text: S-parameter of the CGH40006S in the CGH40006S-TB 16 14 12 Gain (dB) 10 8 6 4 , CGH40006S-TB 0 -2 -4 -6 -8 Gain (dB) -10 -12 -14 -16 -18 -20 -22 CGH40006S - S11 -24 , as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. Pout Gain IDQ = , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD


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PDF CGH40006S CGH40006S CGH40006S, CGH40
2006 - Not Available

Abstract: No abstract text available
Text: CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045-TB VDD = 28 V, IDQ = , Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA, Freq , the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA 50 2.5GHz , Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency = POUT / PDC


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P
2006 - CGH40045

Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
Text: Simulated Small Signal Gain and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency , Performance Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB , CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is , in Amplifier Circuit CGH40045-TB VDD = 28 V, IDQ = 400 mA 80 PSAT (W), Gain (dB), Drain


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
2006 - STR W 5753 a

Abstract: str w 5753 CGH40010 str 5753 2827 CGH40010F 470PF 10UF Cree Microwave 8952
Text: mil 1 CGH40010F or CGH40010P 1 J3,J4 Q1 CGH40010-TB Demonstration Amplifier Circuit , of the CGH40010 in the CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz , , and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB VDD VDD = 28 V,IDQ = 200 mA = , in CGH40010-TB. 3 PSAT is defined as IG = 0.36 mA. 4 Drain Efficiency = POUT / PDC Copyright , 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH40010-TB


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str w 5753 str 5753 2827 CGH40010F 470PF 10UF Cree Microwave 8952
2009 - CGH40006P

Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Text: Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V 20 18 16 14 12 Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V 0 -2 -4 -6 -8 , Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V 20 18 16 14 12 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V 0 -2 -4 -6 -8 , Frequency of the CGH40006P in the CGH40006P-TB Gain= vs 28 Output 2,3,4,5 & mA 6 GHz V V,power, IDQ = 100 DD


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PDF CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
2009 - Not Available

Abstract: No abstract text available
Text: Performance Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V , the CGH40006P in the CGH40006P-TB 5.0 6.0 7.0 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V S-parameter 20 V 0 18 , Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs


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PDF CGH40006P CGH40006P CGH40006P, CGH40
2006 - str 8656

Abstract: str g 8656 str 6353 CGH40010 str 6308 470PF 10UF STR A 6169 05852 8656
Text: J1 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH40010F or CGH40010P 1 J3,J4 CGH40010F-TB , 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Schematic CGH40010-TB Demonstration Amplifier Circuit Outline 3-000537 REV 2 CGH40010-TB Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this , : +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Bill


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 470PF 10UF STR A 6169 05852 8656
2006 - str w 6554 a

Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str 6808 F/CGH40010 Large Signal Model
Text: CGH40010 in the CGH40010-TB S parameters 20 3.4 GHz 14.9 dB 3.8 GHz 14.31 dB Gain (dB), Return , Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB CGH40010F in the CGH40010-TB VDD VDD = 28 V, = 200 mA = 28 V,I IDQ DQ = 200 mA 80 17 Efficiency 70 , 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is defined , should be used to maintain amplifier stability. CGH40010 Power Dissipation De-rating Curve CGH40010F


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str 6808 F/CGH40010 Large Signal Model
2009 - cgh40006p

Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
Text: at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V -2 16 -4 14 , 1.0 2.0 3.0 Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB , Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I VDD = 28 V,power, 2,3,4,5 & mA = 100 6 , as a Function of Frequency of the CGH40006P in the CGH40006P-TB Eff vs V, 2,3,4,5 100 VDD = 28Pout


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PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
2006 - CGH40010F

Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a str f 6554 transistor RF S-parameters Cree Microwave CGH40010P
Text: of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB CGH40010-TB CGH40010F in the VDD VDD = 28 V,IDQ = 200 mA = 28 V, IDQ = 200 mA 17 70 Efficiency , Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is defined as IG = 0.36 mA. 4 , CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz 14.9 dB 3.8 GHz 14.31 dB 3.6 , CGH40010 Rev 3.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40010F


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a str f 6554 transistor RF S-parameters Cree Microwave CGH40010P
2010 - RO5880

Abstract: CGH40006S 48 Ohms Resistors CGS CGH40006S-TB transistor 0879
Text: at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 Gain (dB) 8


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PDF CGH40006S CGH40006S CGH40006S, CGH40 RO5880 48 Ohms Resistors CGS CGH40006S-TB transistor 0879
2006 - Cree Microwave

Abstract: No abstract text available
Text: CGH40010F or CGH40010P 1 J3,J4 CGH40010F-TB Demonstration Amplifier Circuit Copyright  , : +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Schematic CGH40010-TB Demonstration Amplifier Circuit Outline 3-000537 REV 2 CGH40010-TB Copyright © 2006-2007 Cree, Inc , www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Bill of Materials Designator R1,R2 , Dimensions CGH40010F (Package Type ­— 440166) PRELIMINARY Product Dimensions CGH40010P (Package Type


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave
2006 - CGH40045

Abstract: No abstract text available
Text: of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045-TB VDD = 28 V , CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz 20 60% 18 , CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA 2.5GHz 45 2.4GHz 2.6GHz , registered trademarks of Cree, Inc. 8 CGH40045 Rev 3.3 CGH40045-TB Demonstration Amplifier Circuit


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P
2009 - CGH40006

Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Text: Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V , CGH40006P in the CGH40006P-TB 5.0 6.0 7.0 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V S-parameter 20 V 0 18 -2 16 , Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I


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PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
2010 - Not Available

Abstract: No abstract text available
Text: S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 4 CGH40006S - , Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-TB 0 -2 , Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD =EFF 28 vs V,output IDQ , ) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB , (GHz) 4.5 5.0 5.5 6.0 Output Power vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm


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PDF CGH40006S CGH40006S CGH40006S, CGH40
2006 - CGH40045-TB

Abstract: CGH40045
Text: and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA , Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , Tone CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , CGH40045 Rev 3.4 CGH40045-TB Demonstration Amplifier Circuit Schematic CGH40045-TB Demonstration , Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency =


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045-TB
2006 - CGH40045

Abstract: No abstract text available
Text: and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA , Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , Tone CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , CGH40045 Rev 3.4 CGH40045-TB Demonstration Amplifier Circuit Schematic CGH40045-TB Demonstration , Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency =


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P
2006 - CGH40010F

Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model str w 6554 transistor s2p str 6554 CGH40015 str f 6259 cree rf
Text: , RO4350B, Er = 3.48, h = 20 mil 1 CGH40010F or CGH40010P 1 J3,J4 Q1 CGH40010-TB , CGH40010 in the CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz 14.9 dB 3.8 , CGH40010F in the CGH40010-TB CGH40010-TB CGH40010F in the VDD VDD = 28 V,IDQ = 200 mA = 28 V, IDQ = 200 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is , should be used to maintain amplifier stability. CGH40010 Power Dissipation De-rating Curve CGH40010F


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model str w 6554 transistor s2p str 6554 CGH40015 str f 6259 cree rf
2006 - Not Available

Abstract: No abstract text available
Text: 1. VDD = 28V, IDQ = 200mA in the 440166 package. Note 2. Optimized for P1dB CGH40010F-TB , PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010 , operating from a 28 volt rail, offers a , efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. Package Type s: 440166, & 440196 PN’s: CGH40 010F & CGH 40010P The


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P
2006 - Not Available

Abstract: No abstract text available
Text: Small Signal Gain and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 , 20 Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB , CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , mil 1 CGH40045 1 CGH40045-TB Demonstration Amplifier Circuit Copyright © 2006-2014 , from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency


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PDF CGH40045 CGH40045 CGH40045, CGH40 40045P
2006 - str w 6554 a

Abstract: STR 6554 a
Text: Signal Gain and Return Loss vs Frequency of the CGH40010 in the CGH40010-TB S parameters Gain (dB , , and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB CGH40010-TB CGH40010F in the , in CGH40010-TB. 3 PSAT is defined as IG = 0.36 mA. 4 Drain Efficiency = POUT / PDC Copyright  , : +1.919.869.2733 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Bill of Materials , .1CEN LK 5POS 1 PCB, RO4350B, Er = 3.48, h = 20 mil 1 CGH40010F or CGH40010P 1 Q1


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a
2006 - CGH40010

Abstract: CGH40010F 10UF 470PF CGH40010-TB
Text: or CGH40010P 1 J3,J4 CGH40010F-TB Demonstration Amplifier Circuit Copyright © 2006-2007 , : +1.919.313.5696 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Schematic CGH40010-TB Demonstration Amplifier Circuit Outline 3-000537 REV 2 CGH40010-TB Copyright © 2006-2007 Cree, Inc. All , CGH40010-TB Demonstration Amplifier Circuit Bill of Materials Designator R1,R2 Description Qty , CGH40010F (Package Type - 440166) PRELIMINARY Product Dimensions CGH40010P (Package Type - 440196


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PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB
2009 - Not Available

Abstract: No abstract text available
Text: Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V -2 , of the CGH40006P in the CGH40006P-TB S-parameter 20 V S-parameter 20 V 0 18 -2 16 , vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I , Gain vs Frequency of the CGH40006P in the CGH40006P-TB at32PIN = 32 dBm, VDD = 28 V Gain @ Pin dBm


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PDF CGH40006P CGH40006P CGH40006P, CGH40
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