The Datasheet Archive

CFK2162-P1 datasheet (5)

Part Manufacturer Description Type PDF
CFK2162-P1 Celeritek 800 to 900 MHz +34 dBm Power GaAs FET Original PDF
CFK2162-P1 Mimix Broadband 800 to 900 MHz + 34 dBm Power GaAs FET Original PDF
CFK2162-P1 Mimix Broadband 800-900 MHz +34 dBm Power GaAs FET Original PDF
CFK2162-P1-000T Celeritek 800 to 900 MHz, +34 dBm, power GaAs FET Original PDF
CFK2162-P1-000T Mimix Broadband 800 to 900 MHz + 34 dBm Power GaAs FET Original PDF

CFK2162-P1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - CFK2162-P1

Abstract: CFK2162-P1-000T FET 3878
Text: for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 - 900 MHz Power Stage 800 - 900 MHz Power , CFK2162-P1 Product Specifications May 1996 (1 of 4) 800 to 900 MHz +34 dBm Power GaAs FET , Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power , Fax: (408) 986-5095 Product Specifications - May 1996 CFK2162-P1 Typical Scattering Parameters , 43 pF 10 pF CFK2162-P1 , 5V, 350 mA 3236 Scott Boulevard, Santa Clara, California 95054 Phone


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PDF CFK2162-P1 CFK2162-P1 CFK2162-P1-000T FET 3878
CFK2162-P1

Abstract: CFK2162-P1-000T
Text: . Ordering part numbers are listed. Part Number for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 , CFK2162-P1 Product Specifications July 1997 (1 of 4) 800 to 900 MHz +34 dBm Power GaAs FET , Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power , CFK2162-P1 Typical Scattering Parameters Frequency (GHz) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 , 50 6.6 pF 50 RF OUT 100 pF 43 pF 10 pF CFK2162-P1 , 5V, 350 mA 3236 Scott Boulevard


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PDF CFK2162-P1 CFK2162-P1 CFK2162-P1-000T
2006 - DB1130

Abstract: CFK2162-P1 CFK2162-P1-000T 0951 13727
Text: for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 - 900 MHz Power Stage 800 - 900 MHz Power , 800-900 MHz +34 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2162-P1 Mimix Broadband , Laws. 800-900 MHz +34 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2162-P1 Typical , . 800-900 MHz +34 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2162-P1 Typical Performance 50 , August 2006 - Rev 03-Aug-06 CFK2162-P1 Thermal Considerations The data shown was taken on a 31 mil


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PDF 03-Aug-06 CFK2162-P1 CFK2162-P1-000T DB1130 CFK2162-P1 CFK2162-P1-000T 0951 13727
2007 - 7586 GE

Abstract: CFK2162-P1 CFK2162-P1-000T
Text: . Ordering part numbers are listed. Part Number for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 , 0.8-1.0 GHz +34 dBm Power GaAs FET November 2007 - Rev 15-Nov-07 CFK2162-P1 Features , CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output , November 2007 - Rev 15-Nov-07 CFK2162-P1 Typical Scattering Parameters (TA = 25°C, Vds = 5 V, Ids = , November 2007 - Rev 15-Nov-07 CFK2162-P1 Typical Performance 50 25 30 20 20 Efficiency


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PDF 15-Nov-07 CFK2162-P1 CFK2162-P1 7586 GE CFK2162-P1-000T
SE 0947

Abstract: FET 3878 0942S application of ic 7474
Text: CFK2162-P1 CFK2162-P1-000T 800 - 900 MHz Power Stage 800 - 900 MHz Power Stage SO-8 surface mount power , ICELERiTEK Product Specifications M ay 1996 (1 o f 4) CFK2162-P1 800 to 900 MHz +34 dBm Power , Description The CFK2162-P1 is a high-gain FET intended for dri ver amplifier applications in high-power , ) 986-5095 CFK2162-P1 Typical Scattering Parameters Frequency (GHz) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 , CFK2162-P1 (3 Of 4) May 1996 Typical Performance Power Output & Power Added Efficiency vs Power Input


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PDF CFK2162-P1 SE 0947 FET 3878 0942S application of ic 7474
1997 - 014-13

Abstract: CFK2162-P1 CFK2162-P1-000T
Text: . Ordering part numbers are listed. Part Number for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 , CFK2162-P1 XPP@s·@YPP@mh¡ KST@b"@p·z^~@g,aTM@fet mOE"OEY@b~·,.,"L@i"N@QPWYU@r·`'^ @rNL@h· , ,.,"L@i"N CFK2162-P1 Product Specifications July 1997 (1 of 4) 800 to 900 MHz +34 dBm , 5 D GND GND D Description The CFK2162-P1 is a high-gain FET intended for driver amplifier , CFK2162-P1 Typical Scattering Parameters Frequency (GHz) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4


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PDF CFK2162-P1 014-13 CFK2162-P1 CFK2162-P1-000T
2007 - Not Available

Abstract: No abstract text available
Text: . Part Number for Ordering CFK2162-P1 CFK2162-P1-000T Function 800 - 900 MHz Power Stage 800 - 900 , 0.8-1.0 GHz +34 dBm Power GaAs FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Features Package , CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power systems, and output , FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Typical Scattering Parameters (TA = 25°C, Vds = 5 V , FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Typical Performance 50 25 30 20 20


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PDF 31-Jul-07 CFK2162-P1 CFK2162-P1 CFK2162-P1-000T
7474 pin out diagram

Abstract: FET 4953 lm 7223 PBA FET CFK2162-P1 CFK2162-P1-000T k 3878 4953 FET LM 7926
Text: » «M« CFK2162-P1 Product Specifications December 1997 (1 of 4) Features □ High Gain â , Description The CFK2162-P1 is a high-gain FET intended for driver amplifier applications in high-power , Manufacturer CFK2162-P1 Product Specifications - December 1997 (2 of 4) Typical Scattering Parameters (TA = , Respective Manufacturer CFK2162-P1 Product Specifications - Decomber 1997 Typical Performance Power , £2 PF = 11 pF RF OUT CFK2162-P1 , 5V, 1200 m A 0.1 |jF RF OUT CFK2162-P1 , 8V, 800 mA 3236


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PDF CFK2162-P1 CFK2162-P1 00bfl2 7474 pin out diagram FET 4953 lm 7223 PBA FET CFK2162-P1-000T k 3878 4953 FET LM 7926
Not Available

Abstract: No abstract text available
Text: r e i C D iw CFK2162-P1 if Product Specifications D ecem ber 1997 (1 of 4 , The CFK2162-P1 is a high-gain FET intended for dri­ ver amplifier applications in high-power systems , ) 986-5060 Fax: (408) 986-5095 CFK2162-P1 Product Specifications ■December 1997 (2 of 4 , Specifications i - » f w CFK2162-P1 i r Decem ber 1997 (3 o f 4) Typical , Santa Clara, California 95054 [ 143 ] Phone: (408) 986-5060 Fax: (408) 986-5095 CFK2162-P1


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PDF CFK2162-P1 CFK2162-P1 0000LÃ
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