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Abstract: No abstract text available
Text: CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. Super high dense cell design for extremely low , CEM8208 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test , production testing. 2 A 1.2 V 6 CEM8208 10 25 C VGS=4.5,3.5,2.5V 12 9 6 VGS , =10V ID=7A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM8208 3 1 0 1


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PDF CEM8208
TF24

Abstract: No abstract text available
Text: CEM8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 7A, RDS(ON) = 22m @VGS = 4.5V. RDS(ON) = 32m @VGS = 2.5V. Super high dense cell design for extremely low , CEM8208 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test , subject to production testing. 2 A 1.2 V 6 CEM8208 10 25 C VGS=4.5,3.5,2.5V 12 , =10V ID=7A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM8208 3 1 0 1


Original
PDF CEM8208 TF24
CEP83A3 equivalent

Abstract: CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: CEM8206 15 0.8 Dual CEM8207(ESD) 4.2 0.7 Dual CEM8208 (ESD) 30 30 40 6 , CEM8208 FDS6812A CEM9926A IRF7401 AO9926E FDS9926A CEM9935A 30 Toshiba TPC8208


Original
PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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