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CEM6861 datasheet (1)

Part Manufacturer Description Type PDF
CEM6861 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF

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CEM6861

Abstract: No abstract text available
Text: CEM6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.5A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 169m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). , . 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEM6861 , subject to production testing. 2 A -1.2 V 6 CEM6861 10 8 -ID, Drain Current (A , ) -VGS, Gate to Source Voltage (V) CEM6861 8 6 4 2 0 0 3 6 9 10 10 10


Original
PDF CEM6861 CEM6861
CEM6861

Abstract: Tf-1225
Text: CEM6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -3.5A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 169m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). , . 2006.Sep http://www.cetsemi.com Details are subject to change without notice . 1 CEM6861 , subject to production testing. 2 A -1.2 V 6 CEM6861 10 8 -ID, Drain Current (A , to Source Voltage (V) CEM6861 -2 RDS(ON)Limit 1ms 10ms 100ms 1s DC 6 TA=25 C


Original
PDF CEM6861 CEM6861 Tf-1225
CEP83A3 equivalent

Abstract: CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: -3.5 2.5 11 -2.1 Single CEM6861 130 170 -3.1 2 11 -2.1 Dual , CEM4301 IRF7241 AO4443 CEM4481 -60 Aos AO4443 CEM6861 SI9407AEY CEM6867


Original
PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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