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CEM4481 datasheet (1)

Part Manufacturer Description Type PDF
CEM4481 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF

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CEM4481

Abstract: No abstract text available
Text: CEM4481 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.6A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). , . 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CEM4481 , %. d.Guaranteed by design, not subject to production testing. 2 A -1.2 V 5 CEM4481 10 -VGS=10 , )Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4481 -2 10ms 100ms 1s


Original
PDF CEM4481 CEM4481
CEP83A3 equivalent

Abstract: CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: CEM4481 -60 74 100 -4.6 2.5 21 -2 76 105 -4.1 2 21 -2 125 169 , CEM4301 IRF7241 AO4443 CEM4481 -60 Aos AO4443 CEM6861 SI9407AEY CEM6867


Original
PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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