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CEM4410A Chino-Excel Technology Corp America II Electronics 6,302 - -

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CEM4410A datasheet (2)

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CEM4410A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
CEM4410A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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cem4410a

Abstract: CEM4410
Text: CEM4410A March 1998 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , Resistance, Junction-to-Ambient a 5-24 CEM4410A ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise , =15V, ID = 10A, VGS =5V nC 16 5-25 6 nC CEM4410A ELECTRICAL CHARACTERISTICS (TA=25 C , Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CEM4410A VDS=VGS ID=250 A 1.4 , Safe Operating Area Figure 9. Gate Charge 5-27 CEM4410A VDD t on 5 V IN D td(off


Original
PDF CEM4410A cem4410a CEM4410
CEM4410A

Abstract: CEM4410
Text: CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 11m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High , 20 CEM4410A Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol , 1.1 V 5 CEM4410A 25 50 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5 , ID=10A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM4410A 6 4 2 10


Original
PDF CEM4410A CEM4410A CEM4410
CEM4410A

Abstract: No abstract text available
Text:  CEM4410A LLI _March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 30V, 10A, Rds(on)=1 1 mD @ Vgs=1 0V. Rds(on)=20itiQ @Vgs=4.5V. • Super high dense cell design for , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambienta R0JA 50 °C/W 5-2 CEM4410A ELECTRICAL , . On-Resistance Variation with Drain Current and Temperature 5-4 CEM4410A œ O) « Ô > ■D O (D -C N <0 = , 10. Maximum Safe Operating Area 5-5 CEM4410A o C > <0 ts E o> o. e i O 1 .n e co a> Ef o


OCR Scan
PDF CEM4410A 20itiQ CEM4410A
semiconductor cross reference

Abstract: AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
Text: CET SSG5N20 CEG8205A CET SSG5N20 CEG9926 CET SSG5N20 CEM4311 CET SSM4435 CEM4410A CET SDM4410 CEM4410A CET SSM4410 CEM4410B CET SSM4420 CEM4416 CET SSM4800 CEM4431 CET STM4431


Original
PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference ap4503M ao3411 AO3401 cross reference anpec Cross Reference
STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M AP9960M FDD6685 stm4532 APEC
Text: CET SSG5N20 CEG8205A CET SSG5N20 CEG9926 CET SSG5N20 CEM4311 CET SSM4435 CEM4410A CET SDM4410 CEM4410A CET SSM4410 CEM4410B CET SSM4420 CEM4416 CET SSM4800 CEM4431 CET STM4431


Original
PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M AP9960M FDD6685 stm4532 APEC
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