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CEM2108 datasheet (1)

Part Manufacturer Description Type PDF
CEM2108 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

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CEM2108

Abstract: No abstract text available
Text: CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 9.5A, RDS(ON) = 14m @VGS = 4.5V. RDS(ON) = 20m @VGS = 2.5V. Super high dense cell design for extremely low RDS , are subject to change without notice . 1 Rev 1. 2006.January http://www.cetsemi.com CEM2108 , %. d.Guaranteed by design, not subject to production testing. 2 A 1.2 V CEM2108 25 25 25 C , ) VGS, Gate to Source Voltage (V) CEM2108 6 4 2 0 0 15 30 45 10 10 10


Original
PDF CEM2108 CEM2108
CEP83A3 equivalent

Abstract: CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: VGS(th) Config (V) 0.9 Single Part No CEM2082 0.9 Dual CEM2108 15 1 Dual , Product SO-8 Package BVds Part No (V) 20 CEM2108 CEM8206 Fairchild IR Vishay ST Aos


Original
PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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