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CCM TEXAS Datasheets Context Search

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2004 - tc247

Abstract: No abstract text available
Text: directly in the charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is , the CCM . Multiplication gain is variable by adjusting the amplitude of the multiplication pulses. The , use in critical applications of Texas Instruments semiconductor products and disclaimers thereto , . Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004­2010, Texas


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PDF TC247 SOCS091B tc247
2006 - NES 1004

Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
Text: . The charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier, impact , multiplication 1 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 TM 1004 x 1002 PIXEL , activates the CCM . The amount of multiplication gain is adjustable depending on the amplitude of , Assemblies" available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS , externally to the VOUT pin. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 3 TM


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PDF TC285SPD-30 SOCS092 30Frame/s NES 1004 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
2003 - odb2

Abstract: EL7156
Text: . Typical Variation of CCM Gain with CMG Voltage 18 POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 , charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using , through high-field regions. Applying multiplication pulses to specially designed gates activates the CCM , Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and


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PDF TC253SPD30 SOCS085 odb2 EL7156
2004 - Three bond

Abstract: TC247
Text: directly in the charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is , the CCM . Multiplication gain is variable by adjusting the amplitude of the multiplication pulses. The , use in critical applications of Texas Instruments semiconductor products and disclaimers thereto , . Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004­2010, Texas


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PDF TC247 SOCS091B Three bond TC247
2004 - ir 499h

Abstract: cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156
Text: directly in the charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is , activates the CCM . Multiplication gain is variable by adjusting the amplitude of the multiplication pulses , . TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TC247SPD-B0 680 x 500 PIXEL , " available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 , ) PN 1uF TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 3 TC247SPD-B0 680


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PDF TC247SPD-B0 SOCS091 ir 499h cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156
2003 - CCM TEXAS

Abstract: peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500
Text: domain before conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using a , high-field regions. Applying multiplication pulses to specially designed gates activates the CCM . The amount , Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. IMPACTRON is a trademark of Texas


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PDF TC253SPDB0 SOCS084 CCM TEXAS peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500
2006 - peltier driver

Abstract: TC246CYM-B0 CCM TEXAS EL7156CS HN1A01F RB050L-40 241H CM500 CCD active area 8 x 8 EL7156
Text: conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise , regions. Applying multiplication pulses to specially designed gates activates the CCM . Multiplication , resembles the function of an image intensifier implemented in solid state. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TC246CYM-B0 680 x 500 PIXEL IMPACTRONTM COMPLEMENTARY , Electrostatic-Discharge-Sensitive (ESD) Devices and Assemblies" available from Texas Instruments. TEXAS INSTRUMENTS POST


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PDF TC246CYM-B0 SOCS089 peltier driver TC246CYM-B0 CCM TEXAS EL7156CS HN1A01F RB050L-40 241H CM500 CCD active area 8 x 8 EL7156
2003 - odb2

Abstract: CCM TEXAS 1SS193 1SS226 CM500 EL7156CS TC237 TC253 TC253SPD TC253SPD-30
Text: Spectral Sensitivity ( CCM On) POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 15 TC253SPD30 680 , voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise, single-carrier, impact , multiplication pulses to specially designed gates activates the CCM . The amount of multiplication is adjustable , for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas , critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the


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PDF TC253SPD30 SOCS085 odb2 CCM TEXAS 1SS193 1SS226 CM500 EL7156CS TC237 TC253 TC253SPD TC253SPD-30
2004 - CCM TEXAS

Abstract: CM500 EL7156CS HN1A01F TC246RGB-B0 CCD Sensor COOLED EL7156
Text: conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise , regions. Applying multiplication pulses to specially designed gates activates the CCM . Multiplication , resembles the function of an image intensifier implemented in solid state. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TC246RGB-B0 680 x 500 PIXEL IMPACTRONTM PRIMARY COLOR , " available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2


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PDF TC246RGB-B0 SOCS087 CCM TEXAS CM500 EL7156CS HN1A01F TC246RGB-B0 CCD Sensor COOLED EL7156
2010 - EL7156

Abstract: No abstract text available
Text: to voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier , . Applying multiplication pulses to specially designed gates activates the CCM . Multiplication gain is , availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products , as of publication date. Products conform to specifications per the terms of the Texas Instruments , . Copyright © 2010, Texas Instruments Incorporated VOUT 10 SUB 1 SRG1 2 CMG 4 THER 6 SRG2 3


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PDF TC246 SOCS096 EL7156
2004 - EL7156

Abstract: No abstract text available
Text: directly in the charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is , activates the CCM . Multiplication gain is variable by adjusting the amplitude of the multiplication pulses , . TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TC247SPD-B0 680 x 500 PIXEL , € available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 , · ᎍ᎗፧፯᎗᎐᎕፪፧፸፸፰ ፸፻ ፸፺ ፸፹ ፸Ꮌᎍ TEXAS INSTRUMENTS POST OFFICE BOX


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PDF TC247SPD-B0 SOCS091 EL7156
2010 - EL7156

Abstract: No abstract text available
Text: to voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier , . Applying multiplication pulses to specially designed gates activates the CCM . Multiplication gain is , availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products , as of publication date. Products conform to specifications per the terms of the Texas Instruments , . Copyright © 2010, Texas Instruments Incorporated VOUT 10 SUB 1 SRG1 2 CMG 4 THER 6 SRG2 3


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PDF TC246 SOCS096 EL7156
2009 - Not Available

Abstract: No abstract text available
Text: . CCM mode 5-V Loop Response Gain and Phase, fCO = 95 kHz, PM = 48° . CCM mode 3.3-V Loop Response Gain and Phase, fCO = 90 kHz, PM = 63° . 5-V CCM Mode Load Transient , . 5-V CCM Mode Output Ripple and Switch Node. 3.3-V CCM Mode Output Ripple


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PDF SLUU381A
2003 - 74AC244

Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
Text: image sensors that multiply charge directly in TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 ­ JANUARY 2006 the charge domain before conversion to voltage. The charge carrier multiplication ( CCM , designed gates activates the CCM . The amount of multiplication gain is adjustable depending on the , from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 TM


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PDF TC285SPD-B0 SOCS093 30Frame/s 74AC244 TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
2003 - TX285SPD

Abstract: TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
Text: before conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise , regions. Applying multiplication TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 , to specially designed gates activates the CCM . The amount of multiplication gain is adjustable , "Guidelines for Handling Electrostatic-DischargeSensitive (ESD) Devices and Assemblies" available from Texas , conformity before removal of the lid. The items below are not guaranteed by Texas Instruments after taped


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PDF TX285SPD-31 SOCS094 JANUARY2006 30Frame/s TX285SPD TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
2003 - TC285SPD-B0

Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
Text: image sensors that multiply charge directly in TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 ­ JANUARY 2006 the charge domain before conversion to voltage. The charge carrier multiplication ( CCM , designed gates activates the CCM . The amount of multiplication gain is adjustable depending on the , from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 TM


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PDF TC285SPD-B0 SOCS093 30Frame/s TC285SPD-B0 Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
2001 - odb2

Abstract: 1SS226 CCM TEXAS TC253 1SS193 CM500 EL7156CS TC237 TC253SPD TN2106N3
Text: voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise, single-carrier, impact , multiplication pulses to specially designed gates activates the CCM . The amount of multiplication is adjustable , ) Devices and Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments , of Texas Instruments. All trademarks are the property of their respective owners. Copyright 2002


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PDF TC253SPD SOCS062B TC253SPD odb2 1SS226 CCM TEXAS TC253 1SS193 CM500 EL7156CS TC237 TN2106N3
2001 - EL7156

Abstract: No abstract text available
Text: voltage. The charge carrier multiplication ( CCM ) is achieved by using a low-noise, single-carrier, impact , multiplication pulses to specially designed gates activates the CCM . The amount of multiplication is adjustable , ) Devices and Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments , of Texas Instruments. All trademarks are the property of their respective owners. Copyright © 2002


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PDF TC253SPD SOCS062B TC253SPD TC25eproduction EL7156
2003 - SAG1

Abstract: No abstract text available
Text: Spectral Sensitivity ( CCM on) 16 POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 TC253SPDB0 680 × , domain before conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using a , high-field regions. Applying multiplication pulses to specially designed gates activates the CCM . The amount , Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and


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PDF TC253SPDB0 SOCS084 SAG1
2006 - Three bond

Abstract: No abstract text available
Text: charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier, impact ionization , pulses to specially designed gates activates the CCM . The amount of multiplication gain is adjustable , availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products , as of publication date. Products conform to specifications per the terms of the Texas Instruments , . Copyright © 2006­2010, Texas Instruments Incorporated TC285 SOCS093A ­ JANUARY 2006 ­ REVISED JUNE 2010


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PDF TC285 SOCS093A 30-Frame/s Three bond
2003 - Not Available

Abstract: No abstract text available
Text: . Typical Variation of CCM Gain with CMG Voltage POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 17 , charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is achieved by using , through high-field regions. Applying multiplication pulses to specially designed gates activates the CCM , Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and


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PDF TC253SPD30 SOCS085
2006 - EL7158

Abstract: EL7156
Text: charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier, impact ionization , pulses to specially designed gates activates the CCM . The amount of multiplication gain is adjustable , availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products , as of publication date. Products conform to specifications per the terms of the Texas Instruments , . Copyright © 2006­2010, Texas Instruments Incorporated TC285 SOCS093A ­ JANUARY 2006 ­ REVISED JUNE 2010


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PDF TC285 SOCS093A 30-Frame/s EL7158 EL7156
2001 - TN2105N3

Abstract: CCM TEXAS odb2 TC253 1N914 CM500 EL7457C TC237 TP2104N3 TN2105
Text: . The charge carrier multiplication ( CCM ) is achieved by using a low-noise single-carrier, impact , multiplication pulses to specially designed gates activates the CCM . The amount of multiplication is adjustable , ) Devices and Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments , property of their respective owners. Copyright 2002, Texas Instruments Incorporated ADVANCE


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PDF TC253 SOCS062B TC253 TN2105N3 CCM TEXAS odb2 1N914 CM500 EL7457C TC237 TP2104N3 TN2105
2015 - Not Available

Abstract: No abstract text available
Text: tOFF Figure 15. Operation in CCM 12 Submit Documentation Feedback Copyright © 2015, Texas , MOSFET Device and Layout Inductance CCM Operation Compatibility Compatible with PSR and SSR Control , compatible with DCM, TM and CCM operation. The wide VDD operating range, wide programming range of the VPC , . . 1 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product , Input, O = Output, I/O = Input/Output Submit Documentation Feedback Copyright © 2015, Texas


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PDF UCC24630 SLUSC82A UCC24630
2001 - SAG1

Abstract: EL7156
Text: in the charge domain before conversion to voltage. The charge carrier multiplication ( CCM ) is , activates the CCM . The amount of multiplication is adjustable, depending on the amplitude of the , Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas , in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. IMPACTRON is a trademark of Texas Instruments. All trademarks are the


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PDF TC253SPD SOCS062B TX253SPD-30 TX253SPD-31 TX253SPD-B0 SAG1 EL7156
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