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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
CA3127E Harris Semiconductor Bristol Electronics 25 $3.58 $1.79
CA3127E RCA Bristol Electronics 168 $3.58 $1.55
CA3127E Rochester Electronics - - -
CA3127ER2323 Rochester Electronics - - -
CA3127ER2323 Harris Semiconductor Rochester Electronics 10,126 $2.52 $2.04
CA3127ER2489 Harris Semiconductor Rochester Electronics 500 $1.27 $1.03
CA3127ER4102 Rochester Electronics - - -
CA3127ER4102 Intersil Corporation Rochester Electronics 1,809 $1.27 $1.03
CA3127EX Harris Semiconductor Rochester Electronics 836 $2.10 $1.71
CA3127EX Harris Semiconductor Bristol Electronics 144 $3.58 $1.67
CA3127F Rochester Electronics - - -
CA3127M Rochester Electronics - - -
CA3127M96 Rochester Electronics - - -
CA3127MZ Rochester Electronics LLC Rochester Electronics 4,687 $26.48 $22.98
CA3127MZ Rochester Electronics - - -
CA3127MZ Renesas Electronics Corporation Future Electronics - $2.60 $2.60

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CA3127 datasheet (21)

Part Manufacturer Description Type PDF
CA3127 Harris Semiconductor Original PDF
CA3127 Harris Semiconductor Original PDF
CA3127 Intersil High Frequency NPN Transistor Array Original PDF
CA3127 RCA Solid State Linear Integrated Circuits 1970s Scan PDF
CA3127E Harris Semiconductor High Frequency NPN Transistor Array Original PDF
CA3127E Intersil High Frequency NPN Transistor Array Original PDF
CA3127E Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-PDIP Original PDF
CA3127E General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
CA3127E Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
CA3127E Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
CA3127E RCA Solid State Linear Integrated Circuits 1970s Scan PDF
CA3127EX Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
CA3127F General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
CA3127H General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
CA3127M Intersil High Frequency NPN Transistor Array Original PDF
CA3127M Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original PDF
CA3127M Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
CA3127M96 Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original PDF
CA3127M96 Intersil High Frequency NPN Transistor Array Original PDF
CA3127M96 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

CA3127 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - ccb transistor

Abstract: TRANSISTOR 100MHz
Text: ® CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array The CA3127 , completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors , Ordering Information PART NUMBER (BRAND) CA3127M (3127) TEMP. RANGE (oC) -55 to 125 PKG. DWG. # M16 , SOIC Pinout CA3127 (SOIC) TOP VIEW 1 2 Q2 3 4 Q1 16 15 14 13 Q5 12 11 SUBSTRATE 5 6


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PDF CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz
2001 - CA3046 bjt

Abstract: CA3086 CA3046 spice CA3046 CA3086 spice CA3046 NPN Pspice ca3086 CA3127 MM9701 Application of the CA3086
Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note June 1997 , CA3127 High Frequency NPN Transistor Arrays. Several model performance curves have been included to , * * CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 , 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 80 (GHz , (mA) FIGURE 6. CA3127 f T vs IC FIGURE 7. CA3127 hFE vs IC 700 280 600 240 (F


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PDF CA3046, CA3086, CA3127 MM9701 CH-1009 CA3046 bjt CA3086 CA3046 spice CA3046 CA3086 spice CA3046 NPN Pspice ca3086 MM9701 Application of the CA3086
1997 - Harris CA3046

Abstract: CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice CA3086 Application of the CA3086 CA3127 MM9701
Text: Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 , , and the CA3127 High Frequency NPN Transistor Arrays. Several model performance curves have been , CORPORATION *ALL RIGHTS RESERVED * * CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 XTI= 3.000E + 00 + VAR = 1.000E + 02 BF = 95.2E + 00 + IKF = , . CA3046 VCE(SAT) vs IC 3 30m 100m 30 100 Application Note MM9701 CA3127 Model


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PDF MM9701 CA3046, CA3086, CA3127 CA3127 CA3086 100mV Harris CA3046 CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice Application of the CA3086 MM9701
1993 - HP-343A

Abstract: HP342A y12 t 646 HP343A 1021-P1 CA3127E CA3127F CA3127M96 dc voltmeter circuit diagrams CA3127
Text: Synthesizers CA3127M -55oC to +125oC 16 Lead Narrow Body SOIC · Cascade Amplifiers CA3127M96 , CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 , CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors


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PDF CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A 1021-P1 CA3127E CA3127F CA3127M96 dc voltmeter circuit diagrams
1999 - CA3046 bjt

Abstract: CA3086 ca3046 CA3046 NPN MM9701 CA3046 spice npn tr array CA3127 333E CA3086 APPLICATION NOTE
Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 , bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays , RIGHTS RESERVED * * CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + , 30m 100m 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 , ) COLLECTOR CURRENT (mA) FIGURE 6. CA3127 fT vs IC FIGURE 7. CA3127 hFE vs IC 700 280 600 240


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PDF CA3046, CA3086, CA3127 MM9701 CA3046 bjt CA3086 ca3046 CA3046 NPN MM9701 CA3046 spice npn tr array 333E CA3086 APPLICATION NOTE
1999 - z144

Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Text: CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC M16 , CA3127 High Frequency NPN Transistor Array August 1996 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose , exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz , connection has been provided for maximum application flexibility. The monolithic construction of the CA3127


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PDF CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Not Available

Abstract: No abstract text available
Text: SOLID STATE 01 D E l 3675081 0014b43 T r r - S 3 " 2 5 Arrays CA3127 , GHz, making the CA3127 useful from dc to 500 MHz. Access is provided to each of the ter m inals fo r , applica tio n flexibility. The m o n o lith ic con struction of the CA3127 provides close electrical and therm al m atching o f the five transistors. The CA3127 is supplied in the 16-lead d u al-in-lin e , . 20 mA *The collector of each transistor of the CA3127 is isolated from the substrate by an


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PDF 0014b43 CA3127 CA-CA3127* CA3127 100-MHz
1996 - z144

Abstract: 1021-P1 zener Diode B22 cascode transistor array HP342A CA3127M96 CA3127M CA3127E CA3127 ,zener Diode B22
Text: PKG. NO. · VHF Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to , CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 , CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors


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PDF CA3127 CA3127 500MHz. 200MHz z144 1021-P1 zener Diode B22 cascode transistor array HP342A CA3127M96 CA3127M CA3127E ,zener Diode B22
647 transistor

Abstract: TA6206 cascode transistor array
Text: Synthesizers · Cascade Amplifiers Ordering Information PART NUMBER CA3127E CA3127F CA3127M CA3127M96 , Transistor Array Description .>1GHz The CA3127 * consists of five general purpose silicon , low 1/f noise and a value of f j in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access , connection has been provided for maximum application flexi bility. The monolithic construction of the CA3127 , . Pinout CA3127 (PDIP, CDIP, 150MIL SOIC) TOP VIEW CAUTION: These devices are sensitive to


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PDF 1A1197 CA3127* CA3127 500MHz. CA3127 100MHz 647 transistor TA6206 cascode transistor array
RCA-CA3127

Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Text: of CA3127. MAXIMUM RATINGS, Absolute-Maximum Values: POWER DISSIPATION, PD: Any one transistor , G E SOLID STATE □! DEl 3fl7SDfll DQ14t43 =1 _B_™ Arrays CA3127 High-Frequency N-P-N , low 1/f noise and a value of fT in excess of 1 GHz, making the CA3127 useful from dc to 500 MHz , connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 is supplied in the 16


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PDF DQ14t43 CA3127 RCA-CA3127* CA3127 100-MHz RCA-CA3127 rca 0190 transistor iY22 rca 0190 6 "transistor arrays" ic currentmirror
1998 - CA3046 bjt

Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June , transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency , + 00 RB = 0.00E + 00 * *COPYRIGHT © 1997 HARRIS CORPORATION *ALL RIGHTS RESERVED * * CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 XTI , 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 80 (GHz


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PDF CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E
CA3127E

Abstract: No abstract text available
Text: Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC , CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product (fT) . >1GHz The CA3127 consists , CA3127 useful from DC to 500MHz. Access is provided to each of the term i­ nals for the individual , . The monolithic construction of the CA3127 provides close electrical and thermal matching of the five


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PDF CA3127 CA3127 500MHz. CA3127E
CA3127

Abstract: TRANSISTOR 100MHz zener y21 CA3127E
Text: ) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tapa and Reel M16.15 CA3127 (PDIP, SOIC) TOP VIEW C A U T , CÌLJ d ì h -L A J R F R IS S E M I C O N D U C T O R CA3127 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a com m , value of fy in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of , for maximum application flexi bility. The m onolithic construction of the CA3127 provides close


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PDF CA3127 CA3127 500MHz. TRANSISTOR 100MHz zener y21 CA3127E
Not Available

Abstract: No abstract text available
Text: Amplifiers · Synthesizers · Cascade Amplifiers Ordering Information PART NUMBER CA3127E CA3127F CA3127M , ® HARRIS S E M I C O N D U C T O R CA3127 High Frequency N-P-N Transistor Array Description The CA3127 * consists of five general purpose silicon n-p-n transistors on a common monolithic , 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the termi nals for the , bility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the


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PDF CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz
Not Available

Abstract: No abstract text available
Text: High-Frequency N -P-N Transistor Array Description The CA3127 * consists of five general-purpose silicon n-p-n , noise and a value of f t In excess of 1GHz, making thè CA3127 . useful from DC to 500MHz. AcGess Is , been provided for maximum application flexibility. Thè monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 Is supplied in tho 16 , . t The collector of each transistor of the CA3127 la Isolated from thé substrate by an Integral diode


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PDF CA3127* CA3127 500MHz. CA3127 16-lead
2003 - z144

Abstract: HP342A CA3127 CA3127M CA3127MZ
Text: TEMP. RANGE (°C) PACKAGE PKG. DWG. # CA3127M CA3127 -55 to 125 16 Ld SOIC M16 , CA3127 ® Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic , of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals , application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal


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PDF CA3127 FN662 CA3127 500MHz. z144 HP342A CA3127M CA3127MZ
100MHZ NPN TRANSISTORS

Abstract: transistor 6623 CA3127 M16.15 Package low noise transistors rf 3127
Text: Synthesizers · Cascade Amplifiers CA3127M (3127) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel , F HH A R R IS August 1996 SEMICONDUCTOR 4 ', l i \ A tV. \ CA3127 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a , value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access Is provided to each of , for maximum application flexi bility. The monolithic construction of the CA3127 provides close


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PDF \CA3127 CA3127 500MHz. CA3127E CA3127M CA3127M96 CA3127 100MHZ NPN TRANSISTORS transistor 6623 M16.15 Package low noise transistors rf 3127
Not Available

Abstract: No abstract text available
Text: N-P-N Transistor Array D e s c rip tio n The CA3127 * consists of five general-purpose silicon n -p -n , noise and a value of f j in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is , been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 is supplied in the 16 , m k g r 662 1 7 -4 3 CA3127 STATIC ELECTRICAL CHARACTERISTICS at T A = 25


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PDF CA3127* CA3127 500MHz. CA3127 100-M
differential pair cascode

Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier npn 8 transistor array common collector npn array
Text: Transistor Array CA3127 ©©©©©©©© 05 V / Q4 TOP VIEW 7X02 SUBSTRATE 7\03 Ò©©©©©© , Collector Current, Iq .20 mA *The collector of each transistor of the CA3127


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PDF 92CS-20350 CA3095 100/XAdc CA3127 differential pair cascode piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier npn 8 transistor array common collector npn array
Not Available

Abstract: No abstract text available
Text: ffl H A R R IS S E M I C O N D U C T O R RCA GE INTERSIL Arrays CA3127 May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s , .6 3.7 2 24 dB dB n kn pF pF m m ho 7 -5 5 CA3127 Fig. 2 - 1/ f noise figure a s a , gain as a function o f frequency at R^ m 7 k 11. 7 -5 6 CA3127 Fig. 9 - DC forw ard-current , collector current. 7 -5 7 ARRAYS CA3127 Fig. 17 - Reverse transadmittance (Y j2 ) as a function


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PDF CA3127 100-MHz
transistor

Abstract: CA3046 pnp array 5GHz PNP transistor TRANSISTOR PNP 5GHz TRANSISTOR ARRAYS transistor array transistor array high frequency HFA3046 ca3039 npn transistor
Text: LINEAR TRANSISTOR AND DIODE ARRAYS SELECTION G UIDE. TRANSISTOR AND DIODE ARRAY DATA SHEETS CA3018 CA3039 CA3045, CA3046 CA3081, CA3082 CA3083 CA3086 CA3096 CA3127 CA3141 CA3146, CA3183 CA3227, CA3246 HFA3046, HFA3096, HFA3127, HFA3128 General Purpose Transistor Arrays. Diode A rra y


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PDF CA3018 CA3039 CA3045, CA3046 CA3081, CA3082 CA3083 CA3086 CA3096 CA3127 transistor CA3046 pnp array 5GHz PNP transistor TRANSISTOR PNP 5GHz TRANSISTOR ARRAYS transistor array transistor array high frequency HFA3046 npn transistor
transistor

Abstract: A 798 transistor NPN transistor transistor military 745 transistor gilbert cell differential pair TRANSISTOR d 718 Transistor Array differential amplifier high power npn UHF transistor differential pair transistor
Text: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E . TRANSISTOR AND DIODE ARRAY, AND DIFFERENTIAL AMPLIFIER DATA SHEETS CA3018, CA3018A CA3028A, CA3028B, CA3053 CA3039 CA3045, CA3046 CA3049, CA3102 CA3054 CA3081, CA3082 CA3083 CA3086 CA3096, CA3096A, CA3096C CA3127 CA3141 CA3146, CA3146A, CA3183, CA3183A CA3227, CA3246 HFA3046, HFA3096, HFA3127, HFA3128 HFA3101 HFA3102 General Purpose Transistor Arrays


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PDF CA3018, CA3018A CA3028A, CA3028B, CA3053 CA3039 CA3045, CA3046 CA3049, CA3102 transistor A 798 transistor NPN transistor transistor military 745 transistor gilbert cell differential pair TRANSISTOR d 718 Transistor Array differential amplifier high power npn UHF transistor differential pair transistor
Not Available

Abstract: No abstract text available
Text: Pfitttl G £ C P L E S S E Y ADVANCE INFORMATION DS3628 • 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fr of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127 and SL3127. 16 IS 14 13 13 11 10 > FEATURES ■■■fT Typically 3GHz Wideband Noise Figure 2.0dB VK Matching Better Than 5mV


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PDF DS3628 SL3227 SL3227 CA3127 SL3127. 60MHz
Not Available

Abstract: No abstract text available
Text: GEC PLESSEY S [ M I ( O M ) U C I O K S ADVANCE INFORMATION SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical ( t of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127 and SL3127. IS IS 14 13 12 11 10 * I— I r ~ i r ~ i i— i r ~ i I— i l — I r p TM ¿ y FEATURES ■■■fT


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PDF SL3227 SL3227 CA3127 SL3127. fl522 D21CH1 60MHz
CA3081

Abstract: No abstract text available
Text: typ. O peration from DC 1o 120M Hz CA3127 Five Independent Transiators 15 20 40 20/trans


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PDF CA3018 CA3018A CA3045 CA3046 CA3081 CA3082 CA3083 CA3039 CA3141
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