The Datasheet Archive

C5-8Z datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
C5-8Z C5-8Z ECAD Model Acrian 5 W, 8 V, 400-512 MHz, VHF/UHF power amplifier Scan PDF
C5-8Z C5-8Z ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
C5-8Z C5-8Z ECAD Model Others Transistor Replacements Scan PDF
C5-8Z C5-8Z ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
C5-8Z C5-8Z ECAD Model Others Shortform Power Data Book Scan PDF
C5-8Z-2 C5-8Z-2 ECAD Model Acrian 5 W, 8 V, 400-512 MHz, VHF/UHF power amplifier Scan PDF
C5-8Z-3 C5-8Z-3 ECAD Model Acrian 5 W, 8 V, 400-512 MHz, VHF/UHF power amplifier Scan PDF

C5-8Z Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
CD2545

Abstract: CD2514 CD7012 CM45-12A BM70-12 CD5944 CM60-12A CD5945 CM10-12A CM30-12A
Text: 5 35.0 GG 12.5 C1-12Z 470 1.0 10.0 65 5 35.0 BB 12.5 C2- 8Z 470 2.0 6.0 60 10 17.5 GG 8.0 C3-12 470 4.0 6.0 60 10 17.5 AA 12.5 C5-8Z 470 5.0 4.0 60 25 7.0 GG 8.0 C5-12 470 5.0 9.5 60 20 8.8 BB , (VDC) B1-12 175 1.0 12.0 70 5 35.0 HH 12.5 B2- 8Z 175 2.0 10.0 60 10 17.5 GG 8.0 B3-12 175 3.0 10.0 60 10 17.5 AA 12.5 B5- 8Z 175 5.0 9.0 60 25 7.0 GG 8.0 B8-12 175 8.0 10.0 60 25 7.0 AA 12.5 B12


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PDF A3-12 A25-12 CD2514 CD2545 CD7012 B1-12 B3-12 B8-12 B12-12 B15-12 CD2545 CD2514 CD7012 CM45-12A BM70-12 CD5944 CM60-12A CD5945 CM10-12A CM30-12A
8Z-2

Abstract: ACRIAN acrian inc fn 155 Scans-00115726
Text: GENERAL DESCRIPTION This device is specifically designed for 8 Volt operation in VHF/UHF power amplifier applications covering the range of 450-512 MHz. C5-8Z 5 WATTS - 8 VOLTS 400*512 MHz MOBILE , Frequency Range* 400*512 C2- 8Z C5-ÖZ 05-82 10W 490 Race Street, San Jose, CA 95126 Phone (408 , Kingdom, Phone (0656) 68021 Printed in USA 308 17 97D 01327 D DE'I DlflSTifl DGD13S7 J C5-8Z-2 , 97D 01328 D "T '33 - O^ T? »rioiflS'ÌTa □□OlHSfl s C5-8Z-3 SERIES INPUT IMPEDANCE VS FREQUENCY


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PDF
E17E

Abstract: No abstract text available
Text: 9 N I M V d Q L JO L d B N O IS n O 13 3 H 5 L ' 31 V 3 S 1H0I3M ¿B-e A3d £ ^ ¿ 1 dWV \W\£/ 1 N00 HSINId ; 0 6 ^ 9 £S ON O N I M V d Q 6 ¿ ¿ 0 0 ON HO Sd (S 3Z I5 03dS N O U V O I l d d V Xj/ s ^ o o i-a d v o a '0dV00dn3 V hum ,o , 3 d A i 310V ld 303d 3W VN 50 \L L ' Dd 'BjnqsiJJDH BivdOddODNi dwv _ n_n_m. _ OElfMXr 03ds lonaodd 1 N00 95H 'À ia W B S S V nnvaN 3 and ' O ' a Z6/6Z/0 L ad dv N05 d 311 Vd ' d Z6/ 8Z /0 L add v N05 d 311 Vd ' d Z6/ 8Z /0 L >ho


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PDF 0dV00dn3 S310NV S30NVd310 96/ES/L S6-fr8frl-0l00 a3SV313d 319NV E17E
Not Available

Abstract: No abstract text available
Text: ¡3 3 § ci C; » 1 -1 "Ì I- 1 a o 1 Si & 5 -jni 5. I 3- & 03 tu 5 a O 3 » a 8Z ifi 0/ O+OZ'62 OL'Il B 00 'e/ SS ZI I 27 SC 70 0Z 0 + Sl t'Z OS Z 007 m 00': rio 017 00» (tftftir if^cft D f> ss* OH SEDE OSÒ 00 s/ OZ O+OO SI si o ioo s SI 0'99 H si orsi- z si oroo s 1 SI O-ÌOÌ l W1 s_y "JL


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PDF 010-S8ZI
TCD1254GFG(8Z)

Abstract: No abstract text available
Text: IGBT GHF1 8Z W PX YH :H 8Z W NXO YH Values Units G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH :H^_ ¥OO 8%'0) W PX YH XO L NXO L 8Z W NXO YH hhO L 8% W PX YH NOO , Inverse Diode Superfast NPT-IGBT Modules :I 8Z W NXO YH :I^_WP`:I(,- :I1_ SKM 75GB063D :I^_ 49 W NO -0c 02(E Freewheeling Diode :I 8Z W NXO YH :I^_ :I^_WP`:I(,- :I1


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PDF 75GB063D 75GAR063D TCD1254GFG(8Z)
1998 - 68z2

Abstract: 6.8z Hitachi DSA00305
Text: HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1 , Package Code HZU6. 8Z 68Z URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit 200 *1 , *2 Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZU6. 8Z Main Characteristic , 10 -1 10 1.0 (s) Fig.3 Surge Reverse Power Ratings 3 HZU6. 8Z Main


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PDF ADE-208-777 68z2 6.8z Hitachi DSA00305
Not Available

Abstract: No abstract text available
Text: HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-777(Z) Rev 0 , . Laser Mark Package Code HZU6. 8Z 68Z URP Outline Cathode mark Mark 1 |j .-Li :68Z i I] 2 1. Cathode 2. Anode HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol , > 2 ^A at VR = 3.5V. 2 HITACHI HZU6. 8Z Main Characteristic 10 '' 10 10 o CD O , bient Tem perature Surge Reverse Power Ratings 3 HITACHI HZU6. 8Z Main Characteristic


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PDF ADE-208-777
Not Available

Abstract: No abstract text available
Text: m akes the PE E L18C V 8Z ideal for a broad range of battery-pow ered portable equipm ent , anufacturing, including Engineering C hange Orders. Figure 1 /C L K The PE E L18C V 8Z is logically and , betw een the PE E L18C V 8Z and PE EL18C V8 include the addition of program m able clock polarity, a , PEEL18C V8, the PE E L18C V 8Z is logical superset of the industry standard PAL16V8 SPLD. The PEEL18C V8Z , V 8Z architecture w ithout the need for redesign. The P E EL18C V8Z architecture allow s it to


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PDF 18CV8Z-25 20-Pin 0001fl3fl 407D7
Not Available

Abstract: No abstract text available
Text: access time and cycle time TCS H256BP/BJ/ 8Z /BFT - 60 · · · · · · Ra 5 Access Tim e 1a a *CAC , -60 TC51425B8P/8J/ 8Z /8FT-60 SY M BO L PA RA M ETER MIN. Read Comm and Hold Tim e referenced to C5 tRAH *WCH twCR


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PDF TC514258BP/BJ/BZ/BFT TC514258BP/BJ/BZ/BFT-60 TC514258BP/B /BZ/BFT-60
IC 7447

Abstract: "halbleiterwerk frankfurt" dioda by 238 IC 7495 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: 1 8 /2 2 8Z 600/12 SZ 600/13 SZ 600/15 SZ 600/16 SZ 600/18 8Z 600/20 SZ 600/22 SZZ 19/5»1 . SZZ 1 9 , 22 - 12 H*rstall«r 7 7 7 7 7 7 7 7 7 7 7 7 DDE-Typ 8Z 8Z 8Z 600/13 600/15 6 00/16 600/18 600 , W S G W S G W S B e n » . sz 8Z SZ 8Z SZ 8Z 8Z BZ SZ 88 ST 8T ST 8T ST ST ST ST 8T ST ST ST , ST SI ST ST SA SA SA (SZZ ST ST ST ST SZZ SZZ SZZ SZZ SZZ SZZ SZZ 8ZZ SZZ SZ. sz SZ SZ SZ 8Z SZ SZZ , / 100T * 158/2001 TI 58/3O0T *158/4001 *158 600-C01 T I58 800-CQ1 8* 8* 81 81 81 81 8Z SI 81 81 81 81


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PDF
2001 - Not Available

Abstract: No abstract text available
Text: products contained therein. HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE , Type No. Laser Mark Package Code HZU6. 8Z 68Z URP Pin Arrangement Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item , .2001, page 2 of 6 HZU6. 8Z Main Characteristic 10-2 250 -4 10 10-5 10-6 0 2 4 , HZU6. 8Z Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1


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PDF D-85622 D-85619
1999 - Not Available

Abstract: No abstract text available
Text: HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1999 , Code HZU6. 8Z 68Z URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit 200 *1 mW , *2 Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZU6. 8Z Main Characteristic , 10 -1 10 1.0 (s) Fig.3 Surge Reverse Power Ratings 3 HZU6. 8Z Main


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PDF ADE-208-777
2001 - HZU6.8Z

Abstract: DSA003643
Text: HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777A (Z) Rev.1 Nov , Package Code HZU6. 8Z 68Z URP Pin Arrangement Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power , Note: Failure criterion ; IR > 2 µA at VR = 3.5 V. Rev.1, Nov.2001, page 2 of 6 HZU6. 8Z Main , Power Ratings Rev.1, Nov. 2001, page 3 of 6 HZU6. 8Z Transient Thermal Impedance Zth (°C/W


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PDF ADE-208-777A D-85622 D-85619 HZU6.8Z DSA003643
2012 - Not Available

Abstract: No abstract text available
Text: mW) (110 – 130 mW) 445 to 447.5nm BXCE2424445- 7-z BXCE2424445- 8-z 447.5 to 450nm BXCE2424447- 7-z BXCE2424447- 8-z 450 to 452.5nm BXCE2424450- 7-z BXCE2424450- 8-z 452.5 to 455nm BXCE2424452- 7-z BXCE2424452- 8-z 455 to 457.5nm BXCE2424455- 7-z BXCE2424455- 8-z 457.5 to 460nm BXCE2424457- 7-z BXCE2424457- 8-z 460 to 462.5nm BXCE2424460- 7-z BXCE2424460- 8-z 462.5 to 465nm BXCE2424462- 7-z BXCE2424462- 8-z Product Nomenclature BXCE


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PDF DS-C13
2006 - BA10EZ8

Abstract: MR8-89-1 BURNDY ba10
Text: TP16-2Z TP16-6Z TP16- 8Z TP16-10Z TP14-2Z TP14-6Z TP14- 8Z TP14-10Z TP10-6Z TP10- 8Z TP10-10Z * 1000/Reel


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PDF TP16-2Z TP16-6Z TP16-8Z TP16-10Z TP14-2Z TP14-6Z TP14-8Z BA10EZ8 MR8-89-1 BURNDY ba10
BEL 100p transistor

Abstract: transistor bel 100p BEL 100P Key rollover key matrix TMS 5001
Text: -l " rr'I o ~ ~~CIJ . 0-1 0 q R3 ~ 8z 3 W Rl 0 DC2 1 ~ 9 , 0 :o~ ~ , MODEt , 3 ~ 8Z ~~(J) · 0"'"i g~;c ~~c C5 4 ESC 0


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PDF 90-KEY 40-PIN ASR33 BEL 100p transistor transistor bel 100p BEL 100P Key rollover key matrix TMS 5001
2005 - PTSP0002ZA-A

Abstract: No abstract text available
Text: HZU6. 8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1219-0200 (Previous: ADE , Type No. HZU6. 8Z Laser Mark 68Z Package Name URP Pin Arrangement Cathode mark Mark 1 , ) PTSP0002ZA-A (URP) HZU6. 8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction , direction 10 pulse HZU6. 8Z Main Characteristic 10-2 250 Zener Current IZ (A) 10-4 10-5 , HZU6. 8Z Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1


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PDF REJ03G1219-0200 ADE-208-777A) PTSP0002ZA-A Unit2607 PTSP0002ZA-A
Not Available

Abstract: No abstract text available
Text: ]cb^cb , 3 7z 8z N J 3 J]ZbOUS ]cb^cb . 3 .J:9k.u / 3 7z 8z N A 3 AW\S R`WdS` ]cb^cb *+ 3 *+J:9k.u 7z 8z N oHVS ^]eS` ]T AW\S R`WdS` Wa ]\Zg T]` .J:9| A]OR y GW\Y Qc``S\b { 3BOf| ,~[7 ~J , { -{B+L~|- H7E ~J * HVS ]cb^cb QW`QcWb ]T 7z 8z N ^VOaS O`S bVS aO[S| wAW\S R`WdS` ]cb^cb Wa 7z 7z 8z 8z Nz Nx hKWT PQ^eT b_TRXUXRPcX^]b PaT RWP]VTPQ[T Pc P]gcX\T fXcW^dc ]^cXRT0 ,k~|* +{F , D`O\US3DIH N 8ZcS3=C:w~Jx GVWSZR3<|= 7z 8z N ^VOaS wAW\S R`WdS` ]cb^cb 7z 7z 8z 8z Nz N ^VOaSx H


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PDF 911fff0Pdc^ 97HDF
L16V

Abstract: 16V8Z
Text: friA) 100 100 GAL16V8Z-12QP GAL16V8Z-12QJ Specifications G A L 16V 8Z G A L16V 8ZD Ordering # , configuration for all macrocells. The Specifications G A L 16V 8Z G A L16V 8ZD XOR bit of each macrocell , . Specifications G A L 16V 8Z G A L16V 8ZD Registered outputs have eight product terms per output. I/O's have , . Designs requiring eight l/O's can be implemented in the Registered mode. Specifications G A L 16V 8Z G , COMPLEX MODE LOGIC DIAGRAM 1D >- Specifications G A L 16V 8Z G A L16V 8ZD DIP, soie & PLCC Package


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PDF GAL16V8Z GAL16V8ZD GAL16V8ZD GAL16V8Z: GAL16V8Z-12QP 10MHz) L16V 16V8Z
EE 20 bobbin

Abstract: TDK RM6 EE 35 bobbin BEP-13-3110D EE 60 bobbin EE 13 type bobbin EE type CORE data tdk ee8 EE CORE rm6 type bobbin
Text: H5C4 CHARACTERISTICS EEM CORE AL-value(nH/N2) ­20°C H5C4EEM12.7/13.7-Z 2500min. H5C4EEM8/ 8-Z , .9/ 8-Z 1700min. · Measuring conditions: EE5:10kHz, 10mV, ø0.1mm, 100ts./EE8.9:10kHz, 10mV, ø0 , -Z H5C4ER14.5/6-Z H5C4EPC10-Z H5C4EPC13-Z H5C4EEM12.7/13.7-Z H5C4EEM8/ 8-Z H5C4EEM10/10-Z H5C4EEM13/13-Z H5C4EE5-Z H5C4EE8.9/ 8-Z H5C4EP7-Z H5C4EP10-Z H5C4EP13-Z H5C4RM5Z-12 H5C4RM6Z-12 H5C4T3


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PDF H5C4EEM10/10-Z H5C4EEM13/13-Z H5C4EP10-Z H5C4EP13-Z H5C4RM5Z-12 H5C4RM6Z-12 EE 20 bobbin TDK RM6 EE 35 bobbin BEP-13-3110D EE 60 bobbin EE 13 type bobbin EE type CORE data tdk ee8 EE CORE rm6 type bobbin
Not Available

Abstract: No abstract text available
Text: w n Pin on G A L 20V 8Z D — Inp u t and O u tp u t L atch ing D uring P o w e r Dow n /O/Q , Configuration DIP The G A L2 0V 8Z and G A L20V 8Z D , at 100 stan dby current and 1 2 ns pro p a g a tio , ila b le in th e m arke t. T he G A L20V 8Z /ZD is m anufactured using Lattice S em iconductor's ad , 1 0 0 G A L 2 0V 8Z -12 Q P 24-P in P lastic DIP 55 1 0 0 G A L2 0V 8Z -12 Q J 28 -L e a d PLC C 55 1 0 0 G A L 2 0V 8Z -15 Q P 24-P in P lastic DIP 55 1 0 0 G A


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PDF GAL20V8Z GAL20V8ZD 10MHz)
BEPC-13-1110CPH

Abstract: PC44 ferrite materials EE 20 bobbin EE5.5 bobbin epc30 bobbin FEPC-25-A 39a63 EPC19 bepc-30-1112cph Bobbin EE 19
Text: % PC45EEM8/ 8-Z 390±25% PC45EEM8/8A25 25±10% PC45EEM8/8A40 40±15% PC46EEM8/ 8-Z 410±25% PC46EEM8/8A25 , Part No. PC45EE5-Z PC45EE5A25 PC46EE5-Z PC46EE5A25 PC45EE8.9/ 8-Z PC45EE8.9/8A25 PC45EE8.9/8A40 PC46EE8.9/ 8-Z PC46EE8.9/8A25 PC46EE8.9/8A40 · Measuring conditions: EE5:1kHz, 0.5mT, ø0.1mm, 100ts


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PDF EPC25B EPC13 EPC17 EPC19 EPC25 EPC27 EPC27N EPC30 EEM12 EEM10/10 BEPC-13-1110CPH PC44 ferrite materials EE 20 bobbin EE5.5 bobbin epc30 bobbin FEPC-25-A 39a63 EPC19 bepc-30-1112cph Bobbin EE 19
k535

Abstract: 25D10 A85E K-535 Z051 933l
Text: ]vmm /;:@>; 8Z wZ wpZ wkZ wpkmZ wpky r5s :EJNJ BGB@NLF@ MBIMJL b[`^9ikjZ 8;-0 t-D\ d^^L 2;> w


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PDF Uo534 4330573P> 83293Ch 7053\V 70m713 k535 25D10 A85E K-535 Z051 933l
BC 827

Abstract: No abstract text available
Text: Kekj_d] ijob[ 4 Kekj_d] ijob[ 6 67 cWn 5;2;< 57 cWn 9 9 56cWn 6zs629 929 8z s


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PDF 97ECA 585BE56= c3i6/63Gp 56cWn 6zs629 BC 827
MMBZ5249B

Abstract: No abstract text available
Text: SEMICONDUCTOR MMBZ5249B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8Z No. Item Device Mark 8Z MMBZ5249B - - - * Lot No. 1 Marking 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method 1st Character Character arrangement 2nd Character Year 1 (A) A (1) 2 (B) B (2) 3 (C) C (3) Marking(Week) 4 (D) D (4) 5 (E) E (5) 6


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PDF MMBZ5249B OT-23 MMBZ5249B
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