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C106BG Littelfuse Inc Silicon Controlled Rectifier, 4A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-225AA, LEAD FREE, CASE 77-09, 3 PIN
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C106B SYNERT Bristol Electronics 340 - -
C106B1 Solid State Manufacturing Allied Electronics & Automation 111 $0.73 $0.42
C106B32 General Electric Company Bristol Electronics 540 $6.72 $2.76
C106BG ON Semiconductor Allied Electronics & Automation 443 $0.66 $0.56
C106BG ON Semiconductor Avnet 126 - -
C106BG Littelfuse Inc Future Electronics - $0.32 $0.21
C106BG Littelfuse Inc Farnell element14 368 £0.38 £0.24
C106BG Littelfuse Inc element14 Asia-Pacific 368 $0.79 $0.25
C106BG Littelfuse Inc Chip1Stop 500 $0.32 $0.24
C106BG Littelfuse Inc Chip1Stop 569 $0.32 $0.24
C106BG Littelfuse Inc Chip1Stop 500 $0.35 $0.35
C106BG ON Semiconductor Rochester Electronics 12,456 $0.27 $0.22
C106BG Littelfuse Inc TME Electronic Components 500 $0.59 $0.26
C106BG Littelfuse Inc Newark element14 468 $0.65 $0.19
C106BG ON Semiconductor Farnell element14 - £0.39 £0.17
CY7C106B-20VC Cypress Semiconductor Rochester Electronics 322 $2.43 $1.97
CY7C106B-20VCT Cypress Semiconductor Rochester Electronics 750 $1.21 $0.99
CY7C106B-25VC Cypress Semiconductor Rochester Electronics 5,768 $2.88 $2.34
CY7C106B-25VC Cypress Semiconductor Bristol Electronics 87 $3.70 $1.72
CY7C106B-25VCT Cypress Semiconductor Rochester Electronics 4,500 $1.45 $1.18
CY7C106BN-15VC Cypress Semiconductor Rochester Electronics 9,729 $2.44 $1.99
MS3186C106B Glenair Inc Powell Electronics 15 $87.61 $46.87
MS3186C106B Glenair Inc Interstate Connecting Components - - -
MS3186C106B Glenair Inc Avnet - - -
TCKIC106BT Cal-Chip Electronics Bristol Electronics 2,000 - -

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C106B datasheet (54)

Part Manufacturer Description Type PDF
C106B Motorola Silicon controlled rectifier reverse blocking triode thyristor Original PDF
C106B On Semiconductor Sensitive Gate Silicon Controlled Rectifiers Original PDF
C106B On Semiconductor Sensitive Gate Silicon Controlled Rectifier Original PDF
C106B On Semiconductor Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 Original PDF
C106B Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
C106B EIC Semiconductor Thyristors / SCRs Scan PDF
C106B General Electric 4A sensitive-gate silicon controlled rectifier. Vrrm 200V. Scan PDF
C106B Motorola Silicon Controlled Rectifiers Reverse Blocking Triode Thyristor Scan PDF
C106B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
C106B Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
C106B Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
C106B Others Short Form Datasheet and Cross Reference Data Scan PDF
C106B Others Short Form Datasheet and Cross Reference Data Scan PDF
C106B Others Short Form Datasheet and Cross Reference Data Scan PDF
C106B Others Cross Reference Datasheet Scan PDF
C106B On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SCR, General Purpose, 4A RMS, 200V, Pkg Style CASE 77 Scan PDF
C106B Powerex Phase Control Thyristors, SCRs Scan PDF
C106B1 Central Semiconductor Leaded Thyristor SCR Original PDF
C106B1 Central Semiconductor SCRs Original PDF
C106B1 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF

C106B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - C106B

Abstract: CY7C1006B CY7C106B CY7C1006B-15VC c106b1 equivalent
Text: Rise Time < 1V/ns (b) C106B­3 10% 90% 10% Fall Time < 1V/ns C106B­4 THÉVENIN , /O2 I/O1 I/O0 WE C106B­2 I/O1 I/O0 POWER DOWN CE WE OE A0 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 COLUMN DECODER C106B­1 Selection Guide 7C106B-12 7C1006B-12 , VDR > 2V tCDR tR CE C106B­5 Switching Waveforms Read Cycle No.1[11, 12] 1 tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID C106B­6 Read Cycle No. 2 (OE Controlled


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PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B CY7C106B CY7C1006B-15VC c106b1 equivalent
C106M

Abstract: C106D C106B C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers
Text: C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS Central" Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed , V DRM, V RRM t (RMS) 't s m l2t PGM PG(AV) 'g f m Tstg Ç106B 200 Ç1.06D 400 4.0 20 1.65 0.5 0.1 0.2 , R0 (27-April 2004) 34 Central" Semiconductor Corp. C106B C106D C106M 4.0A SENSITIVE GATE


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PDF C106B C106D C106M 27-April O-126 O-126 C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers
2003 - Not Available

Abstract: No abstract text available
Text: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER (200V to 600V) JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed , Resistance C106B 200 I2t PGM PG(AV) IGFM Tstg TJ ΘJC ΘJA C106D 400 4.0 20 C106M 600 , 3.0 6.0 2.0 5.0 7.0 V mA mA mA mA mA 8.0 V/µs (SEE REVERSE SIDE) R0 C106B


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PDF C106B C106M O-126 O-126
2000 - C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Text: 15 C106B­2 I/O1 I/O0 POWER DOWN CE WE OE A0 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 COLUMN DECODER C106B­1 Selection Guide 7C106B-12 7C1006B-12 7C106B-15 , (a) Equivalent to: OUTPUT Rise Time < 1V/ns (b) C106B­3 THÉVENIN EQUIVALENT 167 1.73V 3 10% 90% 10% Fall Time < 1V/ns C106B­4 CY7C106B CY7C1006B Switching , 4.5V VCC 4.5V VDR > 2V tCDR tR CE C106B­5 Switching Waveforms Read Cycle No


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PDF CY7C106B CY7C1006B C106B CY7C1006B CY7C106B 7C106B-12
2001 - C106B2

Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
Text: (a) Equivalent to: OUTPUT THÉVENIN EQUIVALENT 167 1.73V (b) C106B­3 C106B­4 Note: 4 , SENSE AMPS I/O3 I/O2 I/O1 I/O0 VCC A17 A16 A15 A14 A13 A12 A11 NC I/O3 I/O2 I/O1 I/O0 WE C106B­2 512 x 512 x 4 ARRAY COLUMN DECODER POWER DOWN CE WE OE C106B­1 Selection Guide 7C106B-12 , 0 200 Max. Unit V µA ns µs Data Retention Waveform DATA RETENTION MODE VCC 4.5V tCDR CE C106B­5 , PREVIOUS DATA VALID tAA DATA VALID C106B­6 Read Cycle No. 2 (OE Controlled) [12, 13] ADDRESS tRC


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PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B/CY7C1006B C106B2 c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
2004 - c106d

Abstract: C106M C106D to-126 C106d silicon controlled rectifier c106b C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220
Text: C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These , Resistance Thermal Resistance VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGFM Tstg TJ JC JA C106B 200 C106D , . C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TO-126 CASE -


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PDF C106B C106D C106M O-126 27-April C106D to-126 C106d silicon controlled rectifier C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220
2001 - C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Text: /O2 I/O1 I/O0 WE C106B­2 I/O1 I/O0 POWER DOWN CE WE OE A0 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 COLUMN DECODER C106B­1 Selection Guide 7C106B-12 7C1006B-12 , (a) Equivalent to: OUTPUT Rise Time < 1V/ns (b) C106B­3 10% 90% 10% Fall Time < 1V/ns C106B­4 THÉVENIN EQUIVALENT 167 1.73V Note: 4. Tested initially and after any design , VDR > 2V tR tCDR CE C106B­5 Switching Waveforms Read Cycle No.1[11, 12] 1 tRC ADDRESS


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PDF CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B4 C106B CY7C106B c106b1 equivalent
2001 - C106B1

Abstract: C106B CY7C1006B CY7C106B
Text: /O2 I/O1 I/O0 WE C106B­2 I/O1 I/O0 POWER DOWN CE WE OE A0 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 COLUMN DECODER C106B­1 Selection Guide 7C106B-12 7C1006B-12 , (a) Equivalent to: OUTPUT Rise Time < 1V/ns (b) C106B­3 10% 90% 10% Fall Time < 1V/ns C106B­4 THÉVENIN EQUIVALENT 167 1.73V Note: 4. Tested initially and after any design , VDR > 2V tCDR tR CE C106B­5 Switching Waveforms Read Cycle No.1[11, 12] 1 tRC ADDRESS


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PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B1 C106B CY7C106B
2000 - scr C106B

Abstract: SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D
Text: ., C106B , Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off­State Voltage(1) (Sine Wave, 50­60 Hz, RGK = 1 k, TC = ­40° to 110°C) C106B C106D, C106D1 C106M, C106M1 On-State , 40 to +110 ­ 40 to +150 6.0 A2s Watt Watt Amp C106B °C °C in. lb. C106D C106D1 C106M C106M1 TO225AA , - - 10 100 µA µA ON CHARACTERISTICS Peak Forward On­State Voltage(1) (IFM = 1 A Peak for C106B


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PDF C106B, C-106 scr C106B SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D
2000 - c106d pin out

Abstract: scr C106B SCR 1 c106d c106 scr scr c106d application notes c106d1 C106 Series scr C106d silicon controlled rectifier C106 Series C106D to-126
Text: ., C106B , Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off­State Voltage(1) (Sine Wave, 50­60 Hz, RGK = 1 k, TC = ­40° to 110°C) C106B C106D, C106D1 C106M, C106M1 On-State , 40 to +110 ­ 40 to +150 6.0 A2s Watt Watt Amp C106B °C °C in. lb. C106D C106D1 C106M C106M1 TO225AA , - - 10 100 µA µA ON CHARACTERISTICS Peak Forward On­State Voltage(1) (IFM = 1 A Peak for C106B , , e.g., C106B , Date Code Orderable Parts Action N/A Orderable Short Package Pin Case Status


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PDF C106B, C106M1 O-225 00V-04 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 C106M1T c106d pin out scr C106B SCR 1 c106d c106 scr scr c106d application notes c106d1 C106 Series scr C106d silicon controlled rectifier C106 Series C106D to-126
2003 - scr C106

Abstract: c106d pin out scr C106D scr C106B SCR C106D equivalent circuit SCR C106m C106 Series SCR 106 B circuit using c106d1 C106d silicon controlled rectifier
Text: Device Marking: Device Type, e.g., C106B , Date Code http://onsemi.com SCRs 4 AMPERES RMS 200 thru , Repetitive Off-State Voltage (Note 1) (Sine Wave, 50-60 Hz, RGK = 1 k, TC = -40° to 110°C) C106B C106D , Components Industries, LLC, 2003 November, 2003 - Rev. 5 1 Package Shipping C106B TO225AA


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PDF C106B, C106/D scr C106 c106d pin out scr C106D scr C106B SCR C106D equivalent circuit SCR C106m C106 Series SCR 106 B circuit using c106d1 C106d silicon controlled rectifier
1999 - c106d pin out

Abstract: scr C106 C106 Series C106D to-126 C106 scr C106D CHARACTERISTICS SCR C106m transistor c106 C106B c106 scr
Text: Device Marking: Logo, Device Type, e.g., C106B , Date Code http://onsemi.com SCRs 4 AMPERES RMS , 110°C) C106B C106D, C106D1 C106M, C106M1 VDRM, VRRM On-State RMS Current (180° Conduction , ­ Rev. 2 1 Package Shipping C106B (1) VDRM and VRRM for all types can be applied on a , CHARACTERISTICS Peak Forward On­State Voltage(1) (IFM = 1 A Peak for C106B , D, & M) (IFM = 4 A Peak for C106D1


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PDF C106B, r14525 C106/D c106d pin out scr C106 C106 Series C106D to-126 C106 scr C106D CHARACTERISTICS SCR C106m transistor c106 C106B c106 scr
2002 - scr C106

Abstract: c106d pin out to225aa SCR C106m SCR C-106B C106D to-126 scr C106B scr C106D C106 Series c106 scr
Text: Device Marking: Device Type, e.g., C106B , Date Code http://onsemi.com SCRs 4 AMPERES RMS 200 thru , °C) C106B C106D, C106D1 C106M, C106M1 VDRM, VRRM On-State RMS Current (180° Conduction Angles, TC , Shipping C106B 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply


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PDF C106B, r14525 C106/D scr C106 c106d pin out to225aa SCR C106m SCR C-106B C106D to-126 scr C106B scr C106D C106 Series c106 scr
2000 - C106D1

Abstract: scr C106 scr C106B c106 scr SCR C106D1 SCR C106m SCR C106D C106 circuit using c106d1 c106d pin out
Text: Device Marking: Device Type, e.g., C106B , Date Code http://onsemi.com SCRs 4 AMPERES RMS 200 thru , °C) C106B C106D, C106D1 C106M, C106M1 VDRM, VRRM On-State RMS Current (180° Conduction Angles, TC , . 3 1 Package Shipping C106B (1) VDRM and VRRM for all types can be applied on a , CHARACTERISTICS Peak Forward On­State Voltage(1) (IFM = 1 A Peak for C106B , D, & M) (IFM = 4 A Peak for C106D1


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PDF C106B, r14525 C106/D C106D1 scr C106 scr C106B c106 scr SCR C106D1 SCR C106m SCR C106D C106 circuit using c106d1 c106d pin out
2004 - C106D1 pin out diagram

Abstract: C106 MG c106d pin out C106MG c106mg pin out equivalent SCR c106 scr c106mg SCR C106D equivalent circuit show to-225aa package to225aa
Text: Marking: Device Type, e.g., C106B , Date Code 3 2 1 REAR VIEW SHOW TAB TO-225AA CASE 077 STYLE 2 , *, M1 Y = Year WW = Work Week G* = Pb-Free ORDERING INFORMATION Device C106B C106D C106D1* C106D1G , Repetitive Off-State Voltage (Note 1) (Sine Wave, 50-60 Hz, RGK = 1 kW, TC = -40° to 110°C) C106B C106D


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PDF C106B, C106/D C106D1 pin out diagram C106 MG c106d pin out C106MG c106mg pin out equivalent SCR c106 scr c106mg SCR C106D equivalent circuit show to-225aa package to225aa
2004 - C106MG

Abstract: scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent
Text: Marking: Device Type, e.g., C106B , Date Code 3 2 1 REAR VIEW SHOW TAB TO-225AA CASE 077 STYLE 2 , *, M1 Y = Year WW = Work Week G* = Pb-Free ORDERING INFORMATION Device C106B C106D C106D1* C106D1G , Repetitive Off-State Voltage (Note 1) (Sine Wave, 50-60 Hz, RGK = 1 kW, TC = -40° to 110°C) C106B C106D


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PDF C106B, C-106 C106MG scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent
2000 - SCR C106D1

Abstract: scr C106 scr C106B c106d pin out SCR C106D Application of scr c106D C106D C106B C106D1 SCR C106m
Text: Device Marking: Device Type, e.g., C106B , Date Code http://onsemi.com SCRs 4 AMPERES RMS 200 thru , °C) C106B C106D, C106D1 C106M, C106M1 VDRM, VRRM On-State RMS Current (180° Conduction Angles, TC , Partminer, Inc. 1 Package Shipping C106B (1) VDRM and VRRM for all types can be applied on a , CHARACTERISTICS Peak Forward On­State Voltage(1) (IFM = 1 A Peak for C106B , D, & M) (IFM = 4 A Peak for C106D1


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PDF C106B, r14525 C106/D SCR C106D1 scr C106 scr C106B c106d pin out SCR C106D Application of scr c106D C106D C106B C106D1 SCR C106m
2008 - scr c106mg

Abstract: C106DG C106MG SCR C106D equivalent circuit scr C106DG C106BG scr C106BG C106M1G SCR C106D equivalent SCR c106
Text: ORDERING INFORMATION Package Shipping C106B TO-225AA 500 Units / Box C106BG TO , = 1 kW, TC = -40° to 110°C) Max Unit VDRM, VRRM V 200 400 600 C106B C106D


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PDF O-225AA scr c106mg C106DG C106MG SCR C106D equivalent circuit scr C106DG C106BG scr C106BG C106M1G SCR C106D equivalent SCR c106
2004 - C106 MG

Abstract: C106MG transistors C106 MG scr c106mg SCR C106D equivalent circuit C106D1G C106D SCR equivalent SCR C106m equivalent circuit c106d pin out to225aa
Text: Triggering Device Marking: Device Type, e.g., C106B , Date Code G A K TO-225AA CASE 077 STYLE 2 , Shipping C106B TO225AA 500/Box C106D TO225AA 500/Box C106D1* TO225AA 500/Box , Voltage (Note 1) (Sine Wave, 50-60 Hz, RGK = 1 kW, TC = -40° to 110°C) Max VDRM, VRRM C106B


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PDF C106/D C106 MG C106MG transistors C106 MG scr c106mg SCR C106D equivalent circuit C106D1G C106D SCR equivalent SCR C106m equivalent circuit c106d pin out to225aa
1N4007 TOSHIBA

Abstract: diode 1n4007 toshiba IN5625 IN5060 diode MAC525-6 scr C106D 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
Text: 600 Package 0.8 *1C203Y *1C203YY *1C203A *1C203B •1C203C *1C203D TO-92 4 C106A C106A C106B


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PDF 001b4TM DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode MAC525-6 scr C106D 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
CI06D

Abstract: SCR 2N5061 S60A SCR C106m scr C106B C106M C106A C106F S40A 2N5062
Text: 06 Y 25 4.0 25 0.2 0.8 5.0 C106F 50 4.0 25 0.2 0.8 5.0 C106A 100 4.0 25 0.2 0.8 5.0 C106B 200 4.0


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PDF Tc-23 2N5060 2N5061 2N5062 2N5064 CI06D C106M 100247T SCR 2N5061 S60A SCR C106m scr C106B C106A C106F S40A
scr C106D

Abstract: C106M RCA SCR C106m scr C106 AC scr c106d RCA-C106 JEDEC-TO-202AB C106D scr C106B C106D circuits
Text: , Absolute-Maximum Values: C106F C106A C106B C106C C106D C106E C106M C106S C106N VRRM* \ RGK= 1000n,Tc


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PDF DD177GM O-220AB RCA-C106 110oC 00--A//js 82--A2s 10/ra scr C106D C106M RCA SCR C106m scr C106 AC scr c106d JEDEC-TO-202AB C106D scr C106B C106D circuits
In5062

Abstract: in 5062 1N4007W diode 1n4007 toshiba 1N4007 toshiba SCR 1 c106d 1N4007 rectifier diode scr 2n6396 1N5059 diode diodes 1n4001 - 1n4007
Text: C106B C122B 2N6396 2N6402 300 ·1C203C 400 ·1C203D C106D C122D 2N6397 2N6403 C106M C122M 2N6398 2N6404


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PDF DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W diode 1n4007 toshiba 1N4007 toshiba SCR 1 c106d 1N4007 rectifier diode scr 2n6396 1N5059 diode diodes 1n4001 - 1n4007
thyristor c106d

Abstract: c106d1 motorola c106d thyristor C106 Series, de motorola C106m motorola
Text: Repetitive Forward and Reverse Blocking VoltageO ) (RGK = 1k£2) C106B (TC = - 4 0 ° to 110°C) C106D, C106D1 , Forward "O n " Voltage (lFM = 1 A Peak for C106B , D, & M) (lFM = 4 A Peak for C106D 1, & M1) Gate T rig g


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PDF C106/D thyristor c106d c106d1 motorola c106d thyristor C106 Series, de motorola C106m motorola
IN5062

Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5060 diode IN5624
Text: 0.8 *1C203Y *1C203YY *1C203A *1C203B •1C203C *1C203D TO-92 4 C106A C106A C106B C106D C106M TO


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PDF DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4447 IN5062 IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5060 diode IN5624
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