Not Available
Abstract: No abstract text available
Text: CL = 2 77 MHz 7 ns 2,232 mW CL = 3 100 MHz 7 ns 2,736 mW CL = 2 MC- 458CD64S -A10B (MAX.) CL = 3 MC- 458CD64S -A10 Clock access time (MAX.) MC- 458CD64S-A80 Clock frequency , number Clock frequency Package Mounted devices MHz (MAX.) MC- 458CD64S-A80 144-pin Small , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM
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MC-458CD64S
64-BIT
MC-458CD64S
uPD4564163
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1999 - MC-458CD64LS
Abstract: No abstract text available
Text: frequency and Access time from CLK Part number /CAS latency Clock frequency (MAX.) MC- 458CD64S-A80 CL = 3 CL = 2 MC- 458CD64S -A10 CL = 3 CL = 2 MC- 458CD64S -A10B CL = 3 CL = 2 MC- 458CD64S -A10BL CL = 3 CL = 2 , . © 1997 MC- 458CD64S , 458CD64LS Ordering Information Part number Clock frequency MHz (MAX.) MC- 458CD64S-A80 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S , 458CD64LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S and MC-458CD64LS are a 8,388,608 words by 64
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MC-458CD64S,
458CD64LS
64-BIT
MC-458CD64S
MC-458CD64LS
PD4564163
MC-458CD64S-A80
MC-458CD64S-A10
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Not Available
Abstract: No abstract text available
Text: C-458CD64S-A80 Clock frequency Power consum ption (MAX.) 67 MHz 8 ns 1,944 m W â , Clock frequency Package M ounted devices M Hz (MAX.) M C-458CD64S-A80 144-pin Sm all , â
MC- 458CD64S Asynchronous Characteristics Param eter Symbol - A80 MIN. -A10 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM
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MC-458CD64S
64-BIT
MC-458CD64S
uPD4564163
-A10B/-A10BL
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MC-458CD64S-A10
Abstract: MC-458CD64S-A10B MC-458CD64S-A10BL MC-458CD64S-A80 11DQ60
Text: -A10B (MAX.) CL = 3 MC- 458CD64S -A10 Clock access time (MAX.) MC- 458CD64S-A80 Clock frequency , Ordering Information Part number Clock frequency Package Mounted devices MHz (MAX.) MC- 458CD64S-A80 , 7 MC- 458CD64S Synchronous Characteristics Parameter Symbol - A80 -A10 -A10B Unit , DATA SHEET MOS INTEGRATED CIRCUIT MC- 458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM
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MC-458CD64S
64-BIT
MC-458CD64S
PD4564163
MC-458CD64S-A10
MC-458CD64S-A10B
MC-458CD64S-A10BL
MC-458CD64S-A80
11DQ60
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C-458CD64S-A10B
Abstract: No abstract text available
Text: Clock frequency and Access time from CLK Part num ber /C AS latency Clock frequency (MAX.) M C-458CD64S-A80 CL = 3 CL = 2 M C-458CD 64S-A10 CL = 3 CL = 2 M C- 458CD64S -A10B CL = 3 CL = 2 M C-458CD 64S-A10BL CL , Corporation 1997 NEC Ordering Information Part num ber Clock frequency MHz (MAX.) M C-458CD64S-A80 M C , DATA SHEET / MOS INTEGRATED CIRCUIT MC- 458CD64S , 458CD64LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 458CD64S and MC-458CD64LS are a 8,388,608 words by 64
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MC-458CD64S,
458CD64LS
64-BIT
MC-458CD64S
MC-458CD64LS
PD4564163
C-458CD64S-A80
C-458CD
13041EJ6V0D
C-458CD64S-A10B
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1998 - upd23c8000
Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: ) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD45128441 µPD45128441-L A80 A10 A10B A80 A10 A10B A80 , voltage (V) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD4564441 µPD4564441-L A80 A10 A10B A80 A10 A10B A80 A10 A10B 2M × 8 × 4 µPD4564841 µPD4564841-L 1M × 16 × 4 µPD4564163 µPD4564163-L , mil) Package µPD4564323 µPD4564323-L A80 A10 A10B BL: Burst length MENU · 16M , µPD4516421A-L A80 A10 A12 A80 A10 A12 1M × 8 × 2 µPD4516821A µPD4516821A-L BL: Burst length MENU
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-PC100
compliant64M
compliant16M
168-pin
16-bit,
upd23c8000
upd4502161
uPD23C8000X
uPD4504161
*D431016
uPD23C16000
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1998 - Not Available
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT MC- 458CD64S 1 M-WORD BY 64M-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Please consult with our sales offices for data sheet. NEC
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MC-458CD64S
64M-BIT
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1998 - TFT LCD
Abstract: No abstract text available
Text: TCG035VLPAANN-AN00 400 1000:1 LED - CMOS (h|v): ±80 | -60/80 -20 to 70oC 3.5â 320 x 240 T-55343GD035JU-LW-ADN 400 700:1 LED - CMOS (h|v): ±80 | ±80 -20 to 70oC , CMOS (h|v): ±80 | ±80 -20 to 70oC 5.7â 320 x 240 TCG057QVLGA-G00 500 500:1 LED - CMOS (h|v): ±80 | ±80 -20 to 70oC 5.7â 320 x 240 TCG057QVLCA-G00 350 500:1 LED - CMOS (h|v): ±80 | ±80 -20 to 70oC 5.7â 320 x 240
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1998-2013KICC
TFT LCD
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2008 - Not Available
Abstract: No abstract text available
Text: ) 0 â10 Attenuation(dB) 0 Common mode â50 â60 â70 â80 Differential mode â40 Common mode â50 â60 â70 â80 Differential mode â90 â90 â , Frequency(MHz) Common mode â40 â50 â60 Differential mode â70 â80 Differential mode â30 Common mode â40 â50 â60 â70 â80 â90 â90 â100 â , mode â40 â50 Differential mode â60 â70 â80 â30 Common mode â40 â
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UL1283
E62388
EN60939
SE/07115-4
RTHC-5200
RTHC-5250
RTHC-5300
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Not Available
Abstract: No abstract text available
Text: ,tCLK=10ns,BL=4,CL=3,Vdd=3.6V,Ta=25'C tRC=70ns,tCLK=10ns,Vdd=3.6V,Ta=25'C CKE<0.2 V, V dd=3.6 V,T a=80 ' C V dd=3.6 V,T a=80 ' C V dd=3.0 V,T a=25'C V dd=3.0 V,T a=80 ' C V dd=3.6 V,T a=25' C V dd=3.0V,T a=80 ' C V dd=3.0V,T a=25' C V dd=3.0V,T a=80 ' C V dd=3.0 V,T a=80'C Vdd=3.6V,Ta=80'C Sample Size = , =70ns,tCLK=10ns,Vdd=3.6V,Ta=25'C CKE<0.2V,Vdd=3.6V,Ta=80'C V dd=3.6 V,T a=80 ' C V dd=3.0V,T a=25' C V dd=3.0V,T a=80 ' C V dd=3.6 V,T a=25' C V dd=3.0 V,T a=80 ' C V dd=3.0V,T a=25' C V dd=3.0V,T a=80 ' C V dd
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L-21028-0B
64MSDRAM
L-21024-0A
M5M4V64S20ATP
16Mx4
400mil
54pin
M5M4V64S30ATP
M5M4V64S40ATP
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2013 - Not Available
Abstract: No abstract text available
Text: Gehäuse unterbrachten Pt100 Messkopfverstärker. Das Edelstahlgehäuse, ø80 mm, ist leicht zu , Jahre ø80 x 50 mm Werkstoff Anzeige 4-stellig, 7 segment LCD Gehäuse der Anzeige: Kontrollfeld 3-stellig, 14 segment LCD zeigt entweder °C oder Status Gehäuse, ø80 mm und , Polycarbonat Korrosionsbeständiger Edelstahl AISI 304, (W.1.4301) IP 65 (im ø80 mm Gehäuse , Zulassung Ex ia IIC T4/T5, ATEX II 1G, ohne Batterie Für Ã80 mm Gehäuse (inkl. Frontring) Für
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Pt100
Pt100-FÃ
DE/2013
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Not Available
Abstract: No abstract text available
Text: ns CL = 2 100 MHz 6 ns CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CA721ESA- A80 , -pin Small Outline DIMM 5 piece of /¿PD45128163G5 (Rev. E) (Socket Type) MC-458CA721ESA- A80 (400 , > tR C (M iN .) Unit Notes 550 - A80 MAX. mA 1 -A10 /CAS latency = 3 - A80 , 2 725 550 - A80 875 -A10 t c K > t c K ( M iN ) , - A80 -A10 |C C 4 /CAS , 2 NS C Active standby current in 15 ns, /CS > 5 700 - A80 1,100 mA 2 mA
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MC-458CA721
72-BIT
uPD45128163
M13348X)
M14494EJ1V0DS00
144-PIN
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2003 - Not Available
Abstract: No abstract text available
Text: :192kHz) 0 â60 â20 â70 â80 â40 â90 â100 dBFS dBFS â60 â80 â , 60 â20 â70 â80 â40 â90 â60 â100 dBFS dBFS 96k Frequency (Hz) â80 â100 â110 â120 â130 â120 â140 â140 â150 â160 â , ) 0 â60 â20 â70 â80 â40 â90 â60 â100 dBFS dBFS 24k Frequency (Hz) â80 â100 â110 â120 â130 â120 â140 â140 â150 â
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SRC4190
SBFS023B
192kHz
212kHz
128dB
60dbFS
125dB
24-Bit
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C4516DA72
Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
Text: _ Part num ber MC-4516DA726F- A80 , M C-4516DA726LF- A80 MC-4516DA726F-A10, M C-4516DA726LF-A10 M C-4516DA726LFB- A80 , M C-4516DA726EFC- A80 M C-4516DA726LFB-A10, M C-4516DA726EFC-A10 /C AS latency CL = 3 CL = 2 CL = 3 , ber M C-4516DA726F- A80 M C-4516DA726F-A10 M C-4516DA726LF- A80 M C-4516DA726LF-A10 M C-4516DA726LFB- A80 M C-4516DA726LFB-A10 M C -4516DA726EFC- A80 Clock frequency MHz (MAX.) 125 MHz 100 MHz 125 MHz 100 , Test condition /C AS latency = 2 Grade - A80 -A10 - A80 -A10 Precharge standby current in power down mode
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MC-4516DA726
72-BIT
MC-4516DA726F,
MC-4516DA726LF,
MC-4516DA726LFB
uPD4564441
MC-4516DA726EFC
uPD45128841
M168S-50A107
13203EJ6V0D
C4516DA72
MC-4516DA726
MC-4516DA726F-A80
MC-4516DA726LF-A80
PD45128841
CDC2509
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1999 - MA2180
Abstract: No abstract text available
Text: time from CLK Part number MC-4516DA726F- A80 , MC-4516DA726LF- A80 MC-4516DA726F-A10, MC , 5 MC-4516DA726LFB- A80 5 MC-4516DA726LFB-A10 CL = 3 CL = 2 · Fully Synchronous Dynamic , -4516DA726 Ordering Information Part number MC-4516DA726F- A80 MC-4516DA726F-A10 MC-4516DA726LF- A80 MC , ) 5 5 MC-4516DA726LFB- A80 MC-4516DA726LFB-A10 2 Data Sheet M13203EJ4V0DS00 MC , /CAS latency = 3 Test condition /CAS latency = 2 Grade - A80 -A10 - A80 -A10 Precharge standby current in
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MC-4516DA726
72-BIT
MC-4516DA726
PD4564441
MC-4516DA726F-A80,
MC-4516DA726LF-A80
MC-4516DA726F-A10,
MC-4516DA726LF-A10
MA2180
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1999 - Not Available
Abstract: No abstract text available
Text: time from CLK Part number MC-458DA726F- A80 , MC-458DA726LF- A80 MC-458DA726F-A10, MC-458DA726LF-A10 /CAS , MC-458DA726LFB- A80 MC-458DA726LFB-A10 CL = 3 CL = 2 · Fully Synchronous Dynamic RAM, with , -458DA726 Ordering Information Part number MC-458DA726F- A80 MC-458DA726F-A10 MC-458DA726LF- A80 MC , ) 5 5 MC-458DA726LFB- A80 MC-458DA726LFB-A10 2 Data Sheet M13202EJ4V0DS00 MC-458DA726 Pin , latency = 2 Grade - A80 -A10 - A80 -A10 Precharge standby current in power down mode Precharge standby
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MC-458DA726
72-BIT
MC-458DA726
PD4564841
MC-458DA726F-A80,
MC-458DA726LF-A80
MC-458DA726F-A10,
MC-458DA726LF-A10
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2013 - CAPTEUR PT100
Abstract: sonde type k
Text: inoxydable ø80 mm Tête DIN, form B Raccordements procédé aseptiques Temps de réponse standard ou , protection Boîtier DIN: IP 65 Boîtier ø80 mm: IP 65 + IP 66 Vibrations GL, test 2 (seulement , /2A monté sur boîtier ø80 mm Notice technique 2000-1 Page 2 Exemples dâapplication , Non spécifié Boîtier, ø80 mm {5} Boîtier, ø80 mm avec brides de montage pour tableau ø110 mm , , ø80 mm: 1 adaptateur M20 x 1,5 et 1 bouchon (presse-étoupe non inclus) Boîtier, ø80 mm: 2
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Pt100
Pt1000,
FR/2013-02-10
CAPTEUR PT100
sonde type k
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2010 - PT100 temperature sensor data sheet
Abstract: 1-wire sensor
Text: guidelines Flush mounted surface sensor ø80 mm stainless steel housing or DIN head, form B Pt100 or , ø80 mm housing IP 65 + IP 66 Vibrations Sensor type Pt100, Class A or B Pt1000 , /2A mounted on DIN B housing 11 Male Nipple G1/2A mounted on ø80 mm housing Data Sheet , specified ø80 mm stainless steel housing, Note {5} ø80 mm stainless steel housing with ø110 mm wall , connection Not specified or std. DIN B head selected in the previous choice ø80 mm housing: 1 off M20 x
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Pt100
Pt1000
UK/2010-02-02
A/DN38
PT100 temperature sensor data sheet
1-wire sensor
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Not Available
Abstract: No abstract text available
Text: CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns M C-458CB641ES- A80 M C , Package M ounted devices MHz (MAX.) M C-458CB641ES- A80 125 MHz 144-pin Sm all O utline DIMM , current in power down mode 440 mA 1 440 - A80 440 440 CKE < V il ( m a x .) j , VoH VOL lo 880 880 - A80 880 880 8 3.2 lo = - 4 . 0 m A Low level output voltage - A80 Vi = 0 to 3.6 V, All other pins not under test = 0 V O utput leakage current 560
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MC-458CB641
64-BIT
MC-458CB641ES
PD45128163
M13348X)
M14015EJ3V0DS00
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1999 - Not Available
Abstract: No abstract text available
Text: time from CLK Part number MC-4532DA726EF- A80 /CAS latency CL = 3 CL = 2 MC-4532DA726EF-A10 CL = 3 CL = , type PC100 Registered DIMM Rev. 1.0 Compliant 5 5 MC-4532DA726EFB- A80 CL = 3 CL = 2 MC , number MC-4532DA726EF- A80 MC-4532DA726EF-A10 Clock frequency MHz (MAX.) 125 MHz 100 MHz 125 MHz 100 MHz , Type) Edge connector : Gold plated 43.18 mm (1.7 inch) height (400 mil TSOP (II) 5 5 MC-4532DA726EFB- A80 , /CAS latency = 3 Test condition /CAS latency = 2 Grade - A80 -A10 - A80 -A10 Precharge standby current in
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MC-4532DA726
72-BIT
MC-4532DA726
PD45128441
MC-4532DA726EF-A80
MC-4532DA726EF-A10
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Not Available
Abstract: No abstract text available
Text: organization · Clock frequency and Access time from CLK Part num ber M C-454CB641LS- A80 /C AS latency CL = 3 , ber Clock frequency MHz (MAX.) M C-454CB641LS- A80 125 MHz 144-pin Sm all O utline DIMM (Socket Type) M , latency = 2 - A80 -A10 /C AS latency = 3 - A80 -A10 Precharge standby current in power down mode Precharge , ih(min ), tcK = ° ° , Input signals are stable. tcK>tcK(MiN), lo = 0 m A /C AS latency = 2 - A80 -A10 - A80 -A10 CBR (Auto) refresh current |C C5 tRC>tRC(MIN.) /C AS latency = 2 - A80 -A10 /C AS latency = 3
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MC-454CB641LS
64-BIT
MC-454CB641
uPD4564163
C-454CB641LS-A80
C-454CB641LS-A10
M13348X)
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C-458C
Abstract: No abstract text available
Text: frequency M Hz (MAX.) M C-458CB646F- A80 CL = 3 CL = 2 M C -458C B646F-A10 CL = 3 CL = 2 M C -458CB646LFA- A80 , MHz (MAX.) M C-458CB646F- A80 125 168-pin Dual In-line M em ory Module (Socket Type) M C -458C B646F-A10 100 Edge c o n n e c to r: Gold plated 34.93 mm (1.375 inch) height M C -458CB646LFA- A80 125 8 , Grade - A80 -A10 /C AS latency = 3 - A80 -A10 MIN. MAX. 640 560 680 600 8 4 Unit mA Notes 1 , are stable. /C AS latency = 80 2 - A80 -A10 840 640 1,000 840 1,040 mA 3 mA 2 O perating current
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MC-458CB646
64-BIT
MC-458CB646F
MC-458CB646LFA
uPD4564841
MC-458CB646EFB
uPD45128163
13049EJ6V0D
MC-458CB646EFB
C-458C
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2010 - MESSKO
Abstract: No abstract text available
Text: , ø80 mm DIN Anschlusskopf, Form B Hygienegerechte Prozessanschlüsse Kurze oder normale , Gehäuse mit ø80 mm eingesetzt wird, kann optional zwischen einer konï¬gurierbaren, 4.20 mA Anzeige , -m Schutzklasse DIN Gehäuse: IP 65 ø80 mm Gehäuse: IP 65 + IP 66 Fühlerelement Schwingungen GL , Gehäuse ø80 mit Gewindeanschluss G1/2A Datenblatt 2000-1 Seite 2 Beispiele gemäss Bestellangaben , speziï¬ziert Gehäuse, ø80 mm Edelstahl, Fussnote {5} Gehäuse, ø80 mm Edelstahl mit ø110 mm Wandï¬ansch
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Pt100
Pt1000
Pt100
DE/2010-11-09
MESSKO
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1999 - Not Available
Abstract: No abstract text available
Text: frequency MHz (MAX.) MC-458CB646F- A80 CL = 3 CL = 2 MC-458CB646F-A10 CL = 3 CL = 2 MC-458CB646LFA- A80 CL = 3 , CLK ns (MAX.) 6 6 6 7 6 6 6 7 6 6 6 7 5 MC-458CB646EFB- A80 CL = 3 CL = 2 5 MC , number Clock frequency MHz (MAX.) MC-458CB646F- A80 125 168-pin Dual In-line Memory Module (Socket Type) MC-458CB646F-A10 100 Edge connector : Gold plated 34.93 mm (1.375 inch) height MC-458CB646LFA- A80 125 , devices 5 5 MC-458CB646EFB- A80 125 168-pin Dual In-line Memory Module (Socket Type) MC
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MC-458CB646
64-BIT
MC-458CB646F
MC-458CB646LFA
PD4564841
MC-458CB646EFB
PD45128163
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Not Available
Abstract: No abstract text available
Text: CL = 2 77 MHz 7 ns M C-458CD641LS- A80 M C-458C D641LS-A10 â
M C -458CD641LS-A80L , Information Part num ber Clock frequency Package M ounted devices M Hz (MAX.) M C-458CD641LS- A80 , in |CC2P CKE < V il ( m a x .) j t c K |CC2PS CKE < Unit Notes - A80 460 mA 1 420 - A80 560 -A10 Ic c i MAX. -A10 Operating current Symbol 460 , = 2 /C AS latency = 3 |CC5 tR C > tR C (M IN .) /C AS latency = 2 - A80 760 620
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MC-458CD641LS
64-BIT
MC-458CD641
PD4564163
M13348X)
M13949EJ3V0DS00
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