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    C-4516DA726-A10 Datasheets Context Search

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    2000 - MC-4516DA726

    Abstract: MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA726PFC-A10 MC-4516DA726PFC-A80 PD45128841 m13203
    Text: MC- 4516DA726 Synchronous Characteristics Parameter Symbol -A80 - A10 Unit MIN. Clock , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is a 16,777,216 words by 72 bits synchronous , MHz 6 ns CL = 3 100 MHz 6 ns CL = 2 MC-4516DA726PFC- A10 125 MHz CL = 2 MC-4516DA726PFC-A80 CL = 3 CL = 2 5 (MAX.) CL = 2 MC-4516DA726EFC- A10 Access time from CLK (MAX.) MC


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD45128841 PC100 MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA726PFC-A10 MC-4516DA726PFC-A80 m13203
    C4516DA72

    Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
    Text: ) -A80 - A10 31 M odule bank density D a ta s h e e t M 13203EJ6V0D S00 17 NEC MC- 4516DA726 , 2 Cycle tim e -A80 - A10 24 CL = 2 Access tim e -A80 - A10 25-26 27 t R P (M IN .) MC- 4516DA726 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM , _ Part num ber MC-4516DA726F-A80, M C-4516DA726LF-A80 MC-4516DA726F- A10 , M C-4516DA726LF- A10 M C-4516DA726LFB-A80, M C-4516DA726EFC-A80 M C-4516DA726LFB- A10 , M C-4516DA726EFC- A10 /C AS latency CL = 3 CL = 2 CL = 3


    OCR Scan     		PDF MC-4516DA726 72-BIT MC-4516DA726F, MC-4516DA726LF, MC-4516DA726LFB uPD4564441 MC-4516DA726EFC uPD45128841 M168S-50A107 13203EJ6V0D C4516DA72 MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
    CDC2509

    Abstract: No abstract text available
    Text: 100 MHz 6 ns 9,648 m W CL = 2 M C-4516DA726-A10 Clock access tim e (MAX.) M C- 4516DA726 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is an 16,777,216 words by 72 bits synchronous , precharge • CBR (Auto) refresh and self refresh • All l/Os have 10 £2 ±10 % of series resistor â , Published February 1998 NS CP(K) Printed in Japan © NEC Corporation 1998 NEC MC- 4516DA726


    OCR Scan     		PDF MC-4516DA726 72-BIT MC-4516DA726 uPD4564441 CDC2509
    M168S-50A93

    Abstract: MC-4516DA726 MC-4516DA726F-A10 MC-4516DA726F-A80 MC-4516DA726LF-A10 MC-4516DA726LF-A80
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is a 16,777,216 words by 72 bits synchronous , .) 125 MHz 6 ns MC-4516DA726F-A80 CL = 2 100 MHz 6 ns MC-4516DA726F- A10 CL = 3 , = 3 100 MHz 6 ns CL = 2 MC-4516DA726LF- A10 CL = 3 CL = 2 5 MC , points. © 1998 MC- 4516DA726 Ordering Information Part number Clock frequency Package


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD4564441 MC-4516ne M168S-50A93 MC-4516DA726F-A10 MC-4516DA726F-A80 MC-4516DA726LF-A10 MC-4516DA726LF-A80
    Not Available

    Abstract: No abstract text available
    Text: access time Family /CAS latency Clock frequency (MAX.) M C- 4516DA726 -A80 CL = 3 CL = 2 M C-4516DA726-A10 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is an 16,777,216 words by 72 bits synchronous , In-line Memory Module (Socket Type) M C-4516DA726F- A10 100 MHz Edge c o n n e c to r: Gold plated 43.18 mm (1.7 inch) height [Double side] Package MC- 4516DA726 Mounted devices 18 pieces of lu


    OCR Scan     		PDF MC-4516DA726 72-BIT MC-4516DA726 uPD4564441 C-4516DA726-A80 C-4516DA726-A10
    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C- 4516DA726 is a 16,777,216 words by 72 bits synchronous , (MAX.) (MAX.) 6 ns M C-4516DA726F-A80 CL = 3 125 MHz CL = 2 100 MHz 6 ns M C-4516DA726F- A10 , = 2 100 MHz 6 ns CL = 3 100 MHz 6 ns CL = 2 M C-4516DA726LF- A10 CL = 3 77 , 10 £2 ±10 % of series resistor • Single 3.3 V ±0.3 V power supply • LVTTL compatible • 4


    OCR Scan     		PDF MC-4516DA726 72-BIT C-4516DA726 uPD4564441
    2001 - MC-4516DA726

    Abstract: MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA726PFC-A10 MC-4516DA726PFC-A80 MC-4516DA726XFC-A80 PD45128841
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4516DA726 is a 16,777,216 words by 72 bits , CL = 2 MC-4516DA726EFC- A10 77 MHz 7 ns CL = 3 MC-4516DA726PFC- A10 CL = 3 CL = 2 CL = 2 CL = 3 MC-4516DA726XFC- A10 CL = 3 CL = 2 125 MHz 6 ns 100 MHz 6 ns , , Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4516DA726 ·


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD45128841 MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA726PFC-A10 MC-4516DA726PFC-A80 MC-4516DA726XFC-A80
    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE EO Description The MC- 4516DA726 is a 16,777,216 words by 72 bits , CL = 2 MC-4516DA726EFC- A10 77 MHz 7 ns CL = 3 MC-4516DA726PFC- A10 CL = 3 CL = 2 CL = 2 CL = 3 MC-4516DA726XFC- A10 CL = 3 CL = 2 125 MHz 6 ns 100 MHz 6 ns , Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4516DA726 â


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD45128841
    1999 - MA2180

    Abstract: No abstract text available
    Text: ) 5 5 MC-4516DA726LFB-A80 MC-4516DA726LFB- A10 2 Data Sheet M13203EJ4V0DS00 MC- 4516DA726 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is a 16,777,216 words by 72 bits synchronous , time from CLK Part number MC-4516DA726F-A80, MC-4516DA726LF-A80 MC-4516DA726F- A10 , MC-4516DA726LF- A10 , 5 MC-4516DA726LFB-A80 5 MC-4516DA726LFB- A10 CL = 3 CL = 2 · Fully Synchronous Dynamic


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD4564441 MC-4516DA726F-A80, MC-4516DA726LF-A80 MC-4516DA726F-A10, MC-4516DA726LF-A10 MA2180
    1998 - CDC2509

    Abstract: No abstract text available
    Text: access time Family /CAS latency Clock frequency (MAX.) MC- 4516DA726 -A80 CL = 3 CL = 2 MC- 4516DA726-A10 , - A10 MAX. ns ns ns ns ns ns ns ns CLK ns ms Unit Note 9 MC- 4516DA726 Serial PD Byte No. 0 1 2 , DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is an 16,777,216 words by 72 bits synchronous , . © 1998 MC- 4516DA726 Ordering Information Part number Clock frequency MHz (MAX.) MC


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD4564441 MC-4516DA726-A80 MC-4516DA726-A10 CDC2509
    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is a 16,777,216 words by 72 bits synchronous , CL = 3 100 MHz 6 ns CL = 2 MC-4516DA726XFC- A10 6 ns CL = 2 MC-4516DA726XFC-A80 125 MHz CL = 2 MC-4516DA726PFC- A10 CL = 3 CL = 2 MC-4516DA726PFC-A80 (MAX.) CL = 2 MC-4516DA726EFC- A10 Access time from CLK (MAX.) MC-4516DA726EFC-A80 Clock frequency


    Original     		PDF MC-4516DA726 72-BIT MC-4516DA726 PD45128841 PC100
    1999 - Not Available

    Abstract: No abstract text available
    Text: ) Package Mounted devices 2 Data Sheet M14082EJ1V0DS00 MC- 4516DA726 Pin Configuration 168 , DQMB0 DQMB1 /CS0 NC VSS A0 A2 A4 A6 A8 A10 BA1(A12) Vcc Vcc CLK0 VSS NC /CS2 DQMB2 DQMB3 NC Vcc NC NC , , Register2,Register3 A0 - A3, A10 BA0, BA1 A4 - A9, A11 /RAS Register1 /CAS CKE0 RA0A - RA3A, RA10A RBA0A, RBA1A RA4A - RA9A, RA11A /RRASA /RCASA RCKE0A RCKE0B A0 - A3, A10 : D0 - D3, D9 - D13 BA0, BA1 A4 - A9, A11 : D4 - D8, D14 - D17 A0 - A3, A10 BA0, BA1 A4 - A9, A11 /RAS Register2 /CAS RA0B -


    Original     		PDF MC-4516DA727 16M-WORD 72-BIT MC-4516DA727 PD4564441 MC-4516DA727-A75
    Not Available

    Abstract: No abstract text available
    Text: self refresh • All DQs have 10 £2 ±10 % of series resistor • Single 3.3 V ±0.3 V power supply , M14082EJ1V0DS00 (400 mil TSO P (II) NEC MC- 4516DA726 Pin Configuration 168-pin Dual In-line Mem , 014 • AO - A3, A10 : DO - D3, D9 - D13 BAO, BA1 A 4 - A9, A11 : D 4 - D8, D 1 4 - D17 AO - A3, A10 BAO, BA1 RAOB - RA3B, R A10B C RBAOB, RBA1B -A O - A3, A10 : D 4 - D8, D 1 4 - D17 , O— » -/W E : DO - D3, D9 - D13 • /R W EB O— *-C K E : D4 - D8, D14 - D17 NEC MC- 4516DA726


    OCR Scan     		PDF MC-4516DA727 16M-WORD 72-BIT MC-4516DA727 uPD4564441 C-4516DA727-A75
    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC- 4516DA726 is an 16,777,216 words by 72 bits synchronous , precharge and controlled precharge • CBR (Auto) refresh and self refresh • All DQs have 10 £2 ±10 % , revised points. © NEC Corporation 1998 NEC MC- 4516DA726 Ordering Information P art n u m , (1 .7 in ch ) h e ig h t 2 [D o u b le side] NEC MC- 4516DA726 Pin Configuration 168


    OCR Scan     		PDF MC-4516DA726 72-BIT MC-4516DA726 uPD4564441
    2000 - A80L

    Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    Text: (333) PC100 (222) PC100 (322) MC- 4516DA726 A80 3 2 125 100 100 77 133 A10 3 2 64M , ) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 , ) (V) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 , PC100 (222) PC100 7 (322) - 8 × × 256M5 4M×16×4 µPD45256163 A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 , ) 3.3±0.3 4K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 125 100 100 77


    Original     		PDF X13769XJ2V0CD00 DRAMSDR256M× 8K/64 54pin A10BL PC100 400mil) PC133 A80L PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    2001 - ELPIDA

    Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
    Text: PC100(2-2-2) A80 MC-4532DA726 PC100(3-2-2) A10 1 PC133(3-3-3) A75 MC-4532DA727 1 PC100(2-2-2) A80 MC- 4516DA726 PC100(3-2-2) 16M x 72 A6 A10 PC133(3-3-3) A75 MC , -4532CD646 PC100(3-2-2) LVTTL A10 PC133(3-3-3) EBS52EC8APFA 4K/64ms A75A MC-4532CD647XFA PC133 , 3.3+/-0.3V 4K/64ms 34.93/1.375 LVTTL A10 *2 *2 A75A MC-4516CB647XFA *2 A10 *2 A75A MC-4516CA727XFA *2 3.3+/-0.3V 4K/64ms 25.4/1.0 A10 LVTTL *2 *2 A75A MC


    Original     		PDF E0226E80 M01E0107 ELPIDA EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
    1998 - upd23c8000

    Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    Text: ) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD45128441 µPD45128441-L A80 A10 A10B A80 A10 A10B A80 A10 A10B 4M × 8 × 4 µPD45128841 µPD45128841-L 2M × 16 × 4 µPD45128163 µPD45128163-L BL , voltage (V) 3.3±0.3 54-pin TSOP (II) (400 mil) Package µPD4564441 µPD4564441-L A80 A10 A10B A80 A10 A10B A80 A10 A10B 2M × 8 × 4 µPD4564841 µPD4564841-L 1M × 16 × 4 µPD4564163 µPD4564163-L , mil) Package µPD4564323 µPD4564323-L A80 A10 A10B BL: Burst length MENU · 16M


    Original     		PDF -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    1998 - PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: -4516DA727 A75 MC- 4516DA726 A80 A10 64M 8M×72 1 MC-458DA727 MC-458DA726 A75 A80 A10 32M 4M×72 1 MC-454DA726 A80 , × bits × banks) Speed grade Clock Clock access /CAS frequency time latency (MHz) MAX. (ns) 3 3 2 A10 , access /CAS frequency time latency (MHz) MAX. (ns) 3 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133 , ) 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 125 100 100 77 100 67 125 100 100 77 100 67 8 5 , frequency time latency (MHz) MAX. (ns) 3 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133 125 100 100 77


    Original     		PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L
    1999 - uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: -458CB645 MC-458CB646 MC-454CA726 MC-454CB645 MC-454CB646 MC- 4516DA726 MC-4516DA727 MC-4532DA726 MC


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    1999 - uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: -458CA726 MC-458CB645 MC-458CB646 MC-454CA726 MC-454CB645 MC-454CB646 MC- 4516DA726 MC-4516DA727 MC


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    2001 - MDDSA-2J-334K

    Abstract: No abstract text available
    Text: dissipation factor Lead Capacitance Taping Tolerance Type ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % Specifications –40°C to +105°C (with derating over 85°C) 100 to 630 V.DC ±5% (J), ±10 % (K), ±20% (M , 8.2 10.0 Lead Capacitance Taping Tolerance Type ±10 % ±10 % ±10 % ±10 % ±10 % ±10 % ±10


    Original     		PDF MDDSA2A103KT MDDSA2A123KT MDDSA2A153KT MDDSA2A183KT MDDSA2A223KT MDDSA2A273KT MDDSA2A333KT MDDSA2A393KT 2000/pack MDDSA-2J-334K
    2013 - Magnetics

    Abstract: No abstract text available
    Text: Inductance Tolerance K ( ±10 %), M (±20%) FOUR LEADED PARTS Case Code NLI106D NLI108D NLI110D , Temperature Rise at DCI +40°C Inductance Change at DCI -10% Inductance Tolerance K ( ±10 %), M , ) Inductance Tolerance Code: J = ±5%, K = ±10 %, M = ±20% Inductance Code (μH): 1st two digits are , Test Freq. DCR (Ω) max. (μH) Tolerance* 22 ±10 % 2.52MHz 0.18 DCI (A) max. 0.90 NLI65D270K _ _ _F 27 ±10 % 2.52MHz 0.21 0.81 NLI65D330K _ _ _F 33 ±10 % 2.52MHz


    Original     		PDF NLI65D NLI66D NLI85D NLI87D NLI11ctors NLI89D Magnetics
    Not Available

    Abstract: No abstract text available
    Text: ±5%), K ( ±10 %), M (±20%) DIMENSIONS (mm) Series A max. S (Bulk) S (Tape & Box) D max , Sleeving (blank for no sleeving) Inductance Tolerance Code: J = ±5%, K = ±10 %, M = ±20% Inductance , 3.9 ±10 % 100 7.96MHz 70 0.135 1450 NLI46C4R7K_ _ _F 4.7 ±10 % 100 7.96MHz 50 0.140 1320 NLI46C5R6K_ _ _F 5.6 ±10 % 100 7.96MHz 45 0.145 1230 NLI46C6R8K_ _ _F 6.8 ±10 % 100 7.96MHz 30 0.150 1150 NLI46C8R2K_ _ _F


    Original     		PDF 14X16mm) NLI46C NLI81C NLI68C NLI77C NLI100C NLI102C NLI108C
    Not Available

    Abstract: No abstract text available
    Text: ) VCBO IC = −10 µA, IE = 0 Conditions Min −50 Typ Max Collector-emitter voltage , UNR9111J − 0.5 UNR911FJ/911HJ µA − 0.1 (Collector open) −1.0 UNR9119J , (sat) 400 160 460 IC = −10 mA, IB = − 0.3 mA − 0.25 V IC = −10 mA, IB = â , ˆ’ 0.2 int Ma R1 V VCC = −5 V, VB = −3.5 V, RL = 1 kΩ VCC = −5 V, VB = −10 V , „¦ VCB = −10 V, IE = 1 mA, f = 200 MHz 80 150 80 VCB = −10 V, IE = 2 mA, f = 200 MHz


    Original     		PDF 2002/95/EC) UNR911xJ UN911xJ SC-89 UNR9110J UN9110J) UNR9111J UN9111J) UNR9112J UN9112J)
    Not Available

    Abstract: No abstract text available
    Text: °C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 Min â , saturation voltage VCE(sat) 400 160 UNR9110G/9115G/ 9116G/9117G/911BG 460 IC = −10 mA, IB = − 0.3 mA − 0.25 V − 0.2 V IC = −10 mA, IB = −1.5 mA UNR911VG VOH , ˆ’3.5 V, RL = 1 kΩ VCC = −5 V, VB = −10 V, RL = 1 kΩ VCC = −5 V, VB = −6 V, RL = 1 kΩ Ma VCB = −10 V, IE = 1 mA, f = 200 MHz 80 VCB = −10 V, IE = 1 mA, f = 200 MHz fT


    Original     		PDF 2002/95/EC) UNR911xG
    ...

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