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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Bt 35 F transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MAX715CWG

Abstract: MAX714 Bt 35 transistor motorola transistor 2N2907A HX749 Bt 35 F transistor coil 2n2222a MAX716EWI MAX715 MAX715C/D
Text: C27 % F PG AG Vcc BT LBO E6 ON U6 S1 RS B1 S6 S2 B6N B2 B6 Typical Operating Circuits , 0V, BT = 3V, MAX71_E/M_ _ 7 20 Supply Current in Standby State (ON = 0V) VCC = 11V, BT = 3V 35 55 , off, the base-drive output rises to Vcc (or BT whichever is higher), turning off the pass transistor , [T 16] AG Vcc \J_ ÌH BT LBO [T A1XXIAI Î4| E6 ON [T MAX714 13] U6 SI [5 ÎD RS B1 [6 , ™¦ Four Logic-Controlled +5V Regulators ♦ Three Switching Regulators ♦ 35 |xA Quiescent Current


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PDF MAX714/715/716 MAX716 InpuMAX716C/D MAX716EPI MAX716EWI MAX716MJI MAX716EVKIT MAX715CWG MAX714 Bt 35 transistor motorola transistor 2N2907A HX749 Bt 35 F transistor coil 2n2222a MAX715 MAX715C/D
2N2222A zetex

Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CWE MAX714CPE Caddell-Burns
Text: = 11V, BT = 3V 35 55 HA Supply Current in Operating State (ON = V1) VCC = 11V, BT = 3V, V1 and V2 , off, the base-drive output rises to Vcc (or BT whichever is higher), turning off the pass transistor , [T ÜH AG Vcc \J_ T^ BT LBO [T 14] E6 ON [T MAX714 í§ U6 S1 [][ 12] RS B1 [e_ ïà , Four Logic-Controlled +5V Regulators ♦ Three Switching Regulators ♦ 35 |iA Quiescent Current in , K 1 ABSOLUTE MAXIMUM RATINGS Input Supply Voltages Vcc, BT . -0.3V


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PDF MAX714/715/716 MAX716 inpu40Â MAX716MJI MAX716EVKIT 2N2222A zetex MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CWE MAX714CPE Caddell-Burns
2TX749

Abstract: 2N2222A zetex MAX715CWG E4QN 10P05L
Text: Configurations (continued) -V 3 7 · 2 8 , E7 2 7 ] E6 2 ? g E5 U6 TOP VIEW ; BT f 1 .AG b t [T , perating C ircuits PG [ 7 VCC 1 6 ] AG 1 5 ] BT \2_ A 1 /X IA 1 MAX714 lbo|T o n 1 4 ] E6 , Supply Systems MAX 714/715/716 ABSOLUTE MAXIMUM RATINGS Input Supply Voltages Vcc, BT . -0.3V to +12V S1-S7, B1-B7, ON, E3-E7, U 6 -0.3V to the higher of Vcc+0,3V or BT +0.3 LBO, R S , functional operation o f the device at these or any other conditions beyond those indicated in the


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PDF AX714/715/716 MAX716 MAX716EVKIT 2TX749 2N2222A zetex MAX715CWG E4QN 10P05L
TA7920

Abstract: equivalent of SL 100 NPN Transistor 2N5992 BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
Text: VOLTAGE. . . VEB0 3.5 * CONTINUOUS COLLECTOR CURRENT. Ic 5 * TRANSISTOR DISSIPATION , -to-88-MHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For 12.5-V Amplifiers in VHF Communications Equipment Features , planar transistor featuring overlay emitter eletrode construction. This device utilizes many separate , . The transistor is completely tested for load-mismatch capability at 66 MHz with an infinity-to-one , (br| ebo 10 0 3.5 - V Thermal Resistance: (Junction-to-Case) 0J-C - 3.5 °C/W a Pulsed


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PDF 2N5992 66-to-88-MHz 10-dB 2N5992 TA7920 equivalent of SL 100 NPN Transistor BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 300 siemens igbt BSM 100 diode bym 26 BSM15GD120DN2
Text: cono2 S ix p a c k DIODE 1 IG BT RTHJC K/W 0.6 r T r T BSM 35 E co n o 2 S ix p a c k BSM 50 E cono2 , DIODE BSM 25 H a lf b r id g e l DIODE BSM 35 H a lf b rid g e l DIODE 0.8 IG BT 1 0.44 IG BT 0.18 0.6 , SIEMENS 1 Übersicht IGBT-Module 1 Technische Angaben Technical Information O verview IG BT , Transistor modules Product Range IGBT modules in the voltage range 600 V, 1200 V and 1700 V and in the , Information IGBT Transistors Im wesentlichen ist der IGBT-Transistor ein m odifizierter MOS- Transistor


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PDF
TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Text: -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Type for 12.5-Volt Applications in VHF Communications Equipment , emitter.V(BR)CES ^ ^ With base open.vCEO 18 v •EMITTER-TO-BASE VOLTAGE.VEB0 3.5 V • COLLECTOR CURRENT: Continuous.Ic 5.0 A * TRANSISTOR DISSIPATION: PT At case temperatures up , epitaxial silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device , for stabilization. The transistor is completely tested for load mismatch capability at 66 MHz with a


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PDF 2N5993 88-MHz SS-jV63RJ 2N5993 TA7921 150 watt hf transistor 12 volt rca 632 rca transistor RCA rf power transistor 452 transistor 225/TA7921
1996 - NQ83C95

Abstract: 83C95 Xfmr200 seeq 8023 A553-1084-01 PT4152 EPE6047S AM79C100 83C94 20MHZ
Text: ­.25) 0.5 BT t ­50 mV 4.0 BT 585 mV sin(2 * 0.6 BT t * (t/1BT ­. 35 ) 0.85 BT , output/AutoDUPLEX enable input. This pin consists of an open drain output transistor with a resistor , drain output transistor with a resistor pullup. To disable the link test function, tie the pin to GND , and STP mode input. This pin consists of an open drain output transistor with a resistor pullup. To , Autopolarity Disable input. This pin consists of an open drain output transistor with a resistor pullup. To


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PDF 10BASE-T x3051. 83C95 10BASET) 10BASET MD400139/E NQ83C95 Xfmr200 seeq 8023 A553-1084-01 PT4152 EPE6047S AM79C100 83C94 20MHZ
6MBP15RH060

Abstract: 6MBP30RH060 6MBP20RH060 DC Motor control IGBT FUJI ELECTRIC ipm IGBT THEORY AND APPLICATIONS 6MBP30RH-060 fuji transistor catalog fuji transistor modules 6MBP1 100 LMR 40
Text: of FWD Vf -lc=15A - - 3.5 V 6MBP15RH060 IG BT Modules i Electrical characteristics of control , . 600V/30 A. 6MBP15RH060 IG BT Modules IGBT-IPM R series 600V /15A / 6 in one-package ■Features â , transistor PC 40 W Junction temperature T) 150 'C Input voltage of power supply for pre-driver Vcc -0.3 , time (IGBT) See Fig. 3 ton lc=15A, Vdc=300V Inductive-Load 0.5 - - us toff - - 3.5 us Switching , N • m 6MBP15RH060 IG BT Modules Block diagram Pre-driver 1 includes following functions


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PDF 6MBP15RH060 6MBP20RH060 6MBP30RH060 00V/15A 00V/20A. 00V/30 1999-10H10FIS 6MBP30RH060 DC Motor control IGBT FUJI ELECTRIC ipm IGBT THEORY AND APPLICATIONS 6MBP30RH-060 fuji transistor catalog fuji transistor modules 6MBP1 100 LMR 40
Not Available

Abstract: No abstract text available
Text: is send to line when voltage of this pin is over 1.4 V. 10 BT Backtone Input The signal , over 1.4 V. 10 Input 11 BT Backtone Input The signal entered to this pin is send to , Current Detection Current proportional to line current through this pin. So, power dissipation o f , entered to this pin is send to line when voltage of this pin is over 1.4 V. 12 BT Backtone Input The signal entered to this pin is send to receiver when voltage o f this pin is over 1.4 V. 13


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PDF HA16822P/HA16822MP/H A16822F HA16822 HA16822MP MP-18 HA16822F FP-20DN HA16822on HA16822F) HA16822P/HA16822MP/HA16822F
Not Available

Abstract: No abstract text available
Text: entered to this pin is send to line when voltage of this pin is over 1.4 V. 10 BT Backtone Input , over 1.4 V. 10 Input 11 BT Backtone Input The signal entered to this pin is send to , pin (Q), sending, receiver gain and sending gain o f DTMF/HOLD are automatically adjusted to forward , pin is input o f receiver pre-amplifier. Adjust balancing network Za to restrain from sidetone. 5 , is send to line when voltage of this pin is over 1.4 V. 11 BT Backtone Input The signal


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PDF 6822P/HA1 6822MP/H 6822F HA16822 HA16822P DPA16822P/HA16822MP/HA16822F HA16822F) HA16822P/HA16822MP/HA16822F
2008 - AWL9924

Abstract: ghz detector 50 5G s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Text: 802.11b CCK/ DSSS Gaussian Filtering at 1 Mbps · 32 dB of Linear Power Gain at 2.4 GHz · 35 dB of , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias , inside the 5 GHz PA. 9 VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 , 20 GND 21 VCC3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz


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PDF AWL9924 11a/b/g 11a/b/g AWL9924 ghz detector 50 5G s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
sk 8050 sd power ic

Abstract: LM7000 LM7001 sk 8050 rf YT-30007 sk 8050 ic LA2200 sk 8050 sd FML 612 sk 8050
Text: LC7020AT/ BT is 3.5V. VBat-Vr^3.5V If Vr« 0.7V, VBAT^ 3.5 + 0.7 = 4.2V The VBat 4.2V is allowable at the , Frequency Synthesizer The LC7020AT, BT are controllers for direct PLL ICs LM7000, LM7001. They can be used , . Pin Assignment 481 471 461 4&| 44 | 43 | 42|41 | 40 139 138 37 36 35 34 33 S18 S17 91S SIS S14 E il , COM2 S23 TAPE S24 COMI LC7020AT/ BT SKO AMUTE RES DNR TMT K 1 0 P64 A. B , Voltage "L"-Level Input Voltage Vss Vihi Vili j Kl-8, INT, TAPE -5.25 0.3VSS Vss - 3.5 0 0.7VSS V V V


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PDF LC7020AT, 7020BT LM7000, LM7001. LC7020AT 1000p YT-30202Mitsumi YT-30018 sk 8050 sd power ic LM7000 LM7001 sk 8050 rf YT-30007 sk 8050 ic LA2200 sk 8050 sd FML 612 sk 8050
2010 - philips cfl 18W

Abstract: DULUX OSRAM cfl schematic ballast T5 13W bridge rectifier using the diode 1N4007 18w cfl circuit Essential diode wb1 10n 500V capacitor general electric cfl transistor ballast internal circuit diagram osram dulux
Text: UM10416 UBA2024BP/ BT 25 W demo boards Rev. 1 - 15 November 2010 User manual Document , NXP Semiconductors UBA2024BP/ BT 25 W demo boards Revision history Rev Date Description , UBA2024BP/ BT 25 W demo boards 1. Introduction WARNING Lethal voltage and fire ignition hazard The , of 18 UM10416 NXP Semiconductors UBA2024BP/ BT 25 W demo boards Consult the application , 2 C6 10 nF 1 2 NM D3 1N4007 7 VDD VDD R10 NM J3 1 C1 33 F 200 V


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PDF UM10416 UBA2024BP/BT UBA2024BP, UBA2024BT, UBA2024BP UBA2024BT philips cfl 18W DULUX OSRAM cfl schematic ballast T5 13W bridge rectifier using the diode 1N4007 18w cfl circuit Essential diode wb1 10n 500V capacitor general electric cfl transistor ballast internal circuit diagram osram dulux
2005 - AWL9924

Abstract: AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 50 5G
Text: Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of


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PDF AWL9924 11a/b/g 11a/b/g AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 50 5G
2005 - Not Available

Abstract: No abstract text available
Text: Filtering at 1 Mbps 32 dB of Linear Power Gain at 2.4 GHz 35 dB of Linear Power Gain at 5 GHz Single +3.3 V , power transistor of stage 1 of the 5 GHz PA. 5 GHz Bias Circuit Voltage. Supply voltage and current is , for power transistor of stage 2 of the 5 GHz PA. 5 GHz Supply Voltage. Bias for power transistor of , transistor of stage 3 of the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 , to the bias circuits inside the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 1


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PDF AWL9924 11a/b/g
1996 - 10BASET

Abstract: 83C95 83C96 A553-1084-01 EPE6047S PT4152
Text: open drain output transistor with a resistor pullup. If the pin is tied to 0 BT 4.5 BT 3.1 V , t * (t/1BT ­. 35 ) 0.85 BT ­3.1 V 0.85 BT 2.0 BT Figure 5. Transmit Link Pulse Voltage , input. This pin consists of an open drain output transistor with a resistor pullup. To enable the , transistor with a resistor pullup. To disable the link test function, tie the pin to GND. Otherwise, the pin , Detect Output and Full Duplex Enable Input. This pin consists of an open drain output transistor with a


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PDF 83C96 10BASE-T x3051. 83C96 10BASET) 10BASET MD400140/B 83C95 A553-1084-01 EPE6047S PT4152
transistor IC BT 136

Abstract: AGC1213 6822F ha16821
Text: = l kHz 80 -15 2.4 30 f = 1 kHz 3.5 80 0.6 30 f = 1 kHz 0.7 80 f=lkHz 30 2.5 3 80 Typ 2.85 6.8 4.0 , H A 1 6 8 2 1 P / H A 1 6 8 2 1 M P / H A 1 6 8 2 1 F - * .« " , possible to send DTM F signal or backtone to line or receiver. Moreover there are three kinds of packages , is over 1.4 V. The signal entered to this pin is send to receiver when voltage o f this pin is over , constant. As resistance connected with this pin is smaller, receiver gain is larger. Voltage o f this is


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PDF HA16821 HA16821P transm/HA16821MP/H 16821F HA16821F) HA16821P/HA16821MP/HA16821F transistor IC BT 136 AGC1213 6822F
2006 - 802.11b TI

Abstract: AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1
Text: Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA


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PDF AWL9924 11a/b/g 802.11b TI AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1
2006 - AWL9924

Abstract: AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 50 5G
Text: 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2


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PDF AWL9924 11a/b/g AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 50 5G
Not Available

Abstract: No abstract text available
Text: 2.4 GHz • 35 dB of Linear Power Gain at 5 GHz • Single +3.3 V Supply • Dual , power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias Circuit Voltage. Supply , VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2


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PDF AWL9924 11a/b/g
2006 - AWL9924RS34P0

Abstract: AWL9924RS34P6 AWL9924RS34Q1 AWL9924 .22 uf 400 volt ac capacitor
Text: Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22


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PDF AWL9924 11a/b/g AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1 AWL9924 .22 uf 400 volt ac capacitor
2004 - AWL9924

Abstract: AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1
Text: Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of


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PDF AWL9924 11a/b/g 11a/b/g AWL9924 AWL9924RS34P0 AWL9924RS34P6 AWL9924RS34Q1
Not Available

Abstract: No abstract text available
Text: 30 f = 1 kHz -15 80 -15 2.4 f = 1 kHz 30 80 3.5 f = 1 kHz 30 0.6 80 0.7 30 f = 1 kHz 2.5 , H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F Speech Network IC for Telephone Sets The , when voltage of this pin is over 1.4 V. 10 BT Backtone Input The signal entered to this , BT Backtone Input The signal entered to this pin is send to receiver when voltage of this pin , over 1.4 V. 12 BT Backtone Input The signal entered to this pin is send to receiver when


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PDF HA16821 HA16821MP MP-18 HA16821F FP-20DN HA16821P/HA16821MP/HA16821F
Not Available

Abstract: No abstract text available
Text: H A 1 6 8 2 1 P /H A 1 6 8 2 1 M P /H A 1 6 8 2 1 F -pe-nary Speech Network IC fo r Telephone , The signal entered to this pin is send to line when voltage of this pin is over 1.4 V. 10 BT , sending gain o f DTMF/HOLD are automatically adjusted to forward line current. And gain is fixed when voltage o f this pin is constant. 12 GRCT Receiver Gain Control As resistance connected with , MIC2 Mike Input This pin is input o f mike pre-amplifier. Input impedance is 30 k il typ. To


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PDF HA16821P HA16821 HA16821F) HA16821P/HA16821MP/HA16821F
2004 - AWL9224

Abstract: AWL9224RS28P0 AWL9224RS28P6 AWL9224RS28Q1
Text: . Bias for power transistor of stage 3. 14 VCC2 Supply Voltage. Bias for power transistor of , . 16 VCC1 Supply Voltage. Bias for power transistor of stage 1. 25 2 NAME DESCRIPTION , MIN TYP MAX UNIT Operating Frequency ( f ) 2400 - 2500 MHz Supply Voltage , +20 dBm - -40 -40 - 35 - 35 dB c POUT = +20 dBm 0.80 0.85 0.90 V POUT = , = +25 °C, VCC = +3.3 V, VPC = +3.3 V, 1 Mbps, Gaussian Baseband Filtering, BT = 0.45) PARAMETER


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PDF AWL9224 11b/g 11b/g AWL9224 AWL9224RS28P0 AWL9224RS28P6 AWL9224RS28Q1
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