The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT
LM95245CIMMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-VSSOP -40 to 125
LM95245CIM Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC
LM95245CIMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC
LM96163CISDX/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125

Bjt 547 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - Bjt 547

Abstract: OF BJT 547 Curtice DATASHEET OF BJT 547 advanced design system
Text: Extraction Methods: BJT Example Lab: BJT parameter extraction For the latest information on class , Ireland 1890 924 204 Israel 972-3-9288-504/544 Italy 39 02 92 60 8484 Netherlands 31 (0) 20 547


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PDF N3231A N3231B 5988-2995EN Bjt 547 OF BJT 547 Curtice DATASHEET OF BJT 547 advanced design system
2006 - Bjt 547

Abstract: OF BJT 547 VCO-121 A114 JESD22 stc 407
Text: GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum , MHz/V 100% Production Tested 100% Production Tested 1050MHz 54.7 72.9 91.1 MHz/V


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PDF VCO-121S/STC VCO121S/STCHigh 86mmx22 86mmx13 700MHz 1400MHz -88dBc/Hz 10kHz -115dBc/Hz 100kHz Bjt 547 OF BJT 547 VCO-121 A114 JESD22 stc 407
2012 - 0-10 V PULSE CONTROL DIMMER LED DRIVER IC

Abstract: igbt dimmer DIMMER
Text: Boost output voltage feedback input Base drive output for boost BJT Driver parameter configuration , connected on the line. If no dimmer is connected, the block switches the boost BJT (BDRV pin) for PFC and , driving the boost BJT (BDRV pin). The purpose is to match the load requirement of the dimmer The LED , the boost output capacitor. To provide accurate impedance, the gain (β) of the boost BJT is , voltage. ASU pin is open by default so that ASU BJT (Q3 in Figure 11.1) is turned on and VCC capacitors


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PDF iW3617 120VAC/230VAC IEC61000-3-2 0-10 V PULSE CONTROL DIMMER LED DRIVER IC igbt dimmer DIMMER
2012 - dimmer LED

Abstract: No abstract text available
Text: Input Boost output voltage feedback input Base drive output for boost BJT Driver parameter , block switches the boost BJT (BDRV pin) for PFC and stores the energy in the boost output capacitor , provides dynamic impedance to interface the dimmer by driving the boost BJT (BDRV pin). The purpose is to , impedance, the gain (β) of the boost BJT is calibrated (BISENSE pin). The block also measures the dimmer , ) is charged to the peak of line voltage. ASU pin is open by default so that ASU BJT (Q3 in Figure


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PDF iW3616 120VAC/230VAC IEC61000-3-2 dimmer LED
LB 1639

Abstract: BF 830 transistor UPA801T UPA801T-T1-A NE856 transistor BF 507 OF BJT 547 UPA801T-T1 S21E 651 lem
Text: 1.90 2.00 .899 .808 .723 .660 .610 .583 .560 . 547 .538 .535 .534 .533 .533 .534 .538 , -52.3 - 54.7 57.2 -59.9 -62.8 -65.7 -68.8 -72.0 -75.3 -78.8 -82.3 UPA801T TYPICAL , 55.6 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 , -76.3 -79.6 -83.0 -86.4 UPA801T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1


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PDF UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A transistor BF 507 OF BJT 547 UPA801T-T1 S21E 651 lem
2012 - iW3623

Abstract: IW3623-00 iW36
Text: Base drive for Boost BJT Chooses input start-up voltage and brown-out shutdown voltage Rev. 0.8 , iWatt’s proprietary BJT boost switch control technique, which achieves high power factor and low THD , current limit. Pin 4 – BDRV Base drive for the boost switching circuit BJT switch. Pin 5 – CFG , when VIN_A is less than 0.13V. The BJT emitter resistor provides over-current protection for boost circuit: IQC(MAX) = VOCP (boost) ⁄ Rs (9.1) To minimize BJT turn-on loss and reduce EMI, the BJT is


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PDF iW3623 277VAC 100Hz/120Hz iW3623 IW3623-00 iW36
1999 - LB 1639

Abstract: transistor Bf 444 651 lem 0/transistor BF 489 UPA801T-T1 UPA801T S21E NE856 transistor bf 422 NPN DATASHEET OF BJT 547
Text: 1.90 2.00 .899 .808 .723 .660 .610 .583 .560 . 547 .538 .535 .534 .533 .533 .534 .538 , -52.3 - 54.7 57.2 -59.9 -62.8 -65.7 -68.8 -72.0 -75.3 -78.8 -82.3 UPA801T TYPICAL , 55.6 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 , -76.3 -79.6 -83.0 -86.4 UPA801T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1


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PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 651 lem 0/transistor BF 489 UPA801T-T1 S21E transistor bf 422 NPN DATASHEET OF BJT 547
LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Text: 1.50 1.60 1.70 1.80 1.90 2.00 MAG .899 .808 .723 .660 .610 .583 .560 . 547 .538 .535 .534 .533 .533 .534 , .411 S22 ANG -17.3 -29.2 -36.4 -39.5 -42.0 -44.2 -45.9 -47.9 -49.9 -52.3 - 54.7 57.2 -59.9 -62.8 -65.7 , 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 .337 .337 .300 .290 .281 , PART NUMBER UPA801T-T1-A QUANTITY 3000 PACKAGING Tape & Reel UPA801T NONLINEAR MODEL BJT


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PDF UPA801T NE856 100mA UPA801T 24-Hour LB 1639 transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
2005 - BJT characteristics

Abstract: NE68135 NE68130 NE68119 NE68118 NE68100 NE681 2SC5012 NE68139 2SC4227
Text: 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 . 547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 . 547 .535 .527 .534 .541 .544 , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 UNITS Parameters Q1 , Collector LB Base CCE CCEPKG LE LEX Emitter UNITS BJT NONLINEAR MODEL PARAMETERS , LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1


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PDF NE681 BJT characteristics NE68135 NE68130 NE68119 NE68118 NE68100 2SC5012 NE68139 2SC4227
2003 - kf 203 transistor

Abstract: 682 MARKING SOT-23 NE68119 NE68118 NE68100 NE681 2SC5012 2SC5007 tr/pcb-3/kf 203 transistor transistor KF 507
Text: 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 . 547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 . 547 .535 .527 .534 .541 .544 , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS , Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1 , CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters


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PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE68119 NE68118 NE68100 2SC5012 2SC5007 tr/pcb-3/kf 203 transistor transistor KF 507
NE68130

Abstract: NE68135 1820 0944 ca 4558 BJT BF 167 NE68118 2SC5012 2SC5007 2SC4227 NE AND micro-X
Text: .540 . 547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 . 547 .535 .527 .534 .541 .544 .544 VCE = 8 V, IC = 30 mA 100 500 1000 1500 2000 , LCX Collector LB Base CCE LE CBEPKG CCEPKG LC LEX Emitter BJT NONLINEAR , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS BF , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters UNITS


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PDF NE681 NE681 NE68130 NE68135 1820 0944 ca 4558 BJT BF 167 NE68118 2SC5012 2SC5007 2SC4227 NE AND micro-X
2001 - Not Available

Abstract: No abstract text available
Text: 0.005 with respect to datum "A". Optimum Technology Matching® Applied ü Si BJT GaAs HBT , Board Layout 2” x 2” MODULATORS AND UPCONVERTERS 5 Rev A5 010418 5-47 RF2424


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PDF RF2424 RF2424
2000 - Not Available

Abstract: No abstract text available
Text: 5 .012 .008 1 .050 .016 Si BJT .010 .004 .009 MODULATORS AND UPCONVERTERS , Preliminary MODULATORS AND UPCONVERTERS 5 Rev A3 990210 5-47 RF2424 Preliminary


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PDF RF2424 RF2424
UHF gmsk

Abstract: No abstract text available
Text: Optimum Technology Matching® Applied E f S i BJT Si Bi-CMOS GaAs HBT GaAs MESFET Package Style: SOP , 4 1 OC-> Rev AO 980328 5-47 MODULATORS AND UPCONVERTERS Ul 00 J3 C D < > o C O 00 o


OCR Scan
PDF RF2424 RF2424 2424P UHF gmsk
2001 - Not Available

Abstract: No abstract text available
Text: Matching® Applied GaAs HBT 5 .012 .008 1 .050 .016 Si BJT .010 .004 .009 , Evaluation Board Layout 2” x 2” MODULATORS AND UPCONVERTERS 5 Rev A4 010205 5-47 RF2424


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PDF RF2424 SSOP-16 RF2424
2003 - mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 nec d 882 p transistor mje 3004 2SC5008 S2210 NE680 2SC5013 NE AND micro-X
Text: 0.961 0.869 0.829 0.751 0.695 0.658 0.624 ANG -6.2 -20.2 -36.6 -43.1 - 54.7 -63.8 -71.6 , 64.8 57.3 56.6 56.1 54.7 54.2 51.9 -21.7 -60.5 -70.3 -75.2 -77.4 -81.3 -81.5 -77.2 , CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS , Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1 , CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters


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PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 nec d 882 p transistor mje 3004 2SC5008 S2210 2SC5013 NE AND micro-X
014e1

Abstract: transistor NEC D 882 p 6V mje 1303 NE68030 NE68019 transistor BF 414 NE68000 NE680 2SC5013 NE AND micro-X
Text: 0.961 0.869 0.829 0.751 0.695 0.658 0.624 ANG -6.2 -20.2 -36.6 -43.1 - 54.7 -63.8 -71.6 , 64.8 57.3 56.6 56.1 54.7 54.2 51.9 -21.7 -60.5 -70.3 -75.2 -77.4 -81.3 -81.5 -77.2 , CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS , /31/96 NE680 SERIES NE68019 NONLINEAR MODEL SCHEMATIC Q1 Collector Base Emitter BJT , CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters


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PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 NE68030 NE68019 transistor BF 414 NE68000 2SC5013 NE AND micro-X
2005 - transistor bf 968

Abstract: No abstract text available
Text: S22 ANG -6.2 -20.2 -36.6 -43.1 - 54.7 -63.8 -71.6 -79.9 -9.4 -28.7 -42.7 -46.9 -54.4 -61.4 -67.6 -75.5 , .018 .056 .084 .098 .131 .159 .194 .230 75.1 64.8 57.3 56.6 56.1 54.7 54.2 51.9 .983 .832 .687 .646 , Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS , NONLINEAR MODEL SCHEMATIC Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters , Base LB CCE Collector Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL


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PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968
2006 - mje 1303

Abstract: nec d 882 p transistor transistor KF 517 ET 439 BJT BF 331 transistor NEC D 587 682 SOT23 MARKING transistor BI 342 905 2SC5013 transistor NEC D 882 p 6V
Text: - 54.7 0.90 0.695 -63.8 1.08 0.658 -71.6 1.19 0.624 -79.9 .968 .848 .684 .638 , .098 .131 .159 .194 .230 75.1 64.8 57.3 56.6 56.1 54.7 54.2 51.9 -21.7 -60.5 -70.3 , CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters , BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS 3.84e-16 NF Q1 1.05 BF VAF , CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) UNITS


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PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 nec d 882 p transistor transistor KF 517 ET 439 BJT BF 331 transistor NEC D 587 682 SOT23 MARKING transistor BI 342 905 2SC5013 transistor NEC D 882 p 6V
2007 - AYWW marking code IC

Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce(sat) Transistors, 3x3mm WDFN Package This device integrates one high , Gate-to-Source Voltage VGS ±8.0 V ID - 5.47 A Continuous Drain Current (Note 1) Steady , ), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS - BJT 0.45 0.40 0.35 0.30 0.25 , ://onsemi.com 8 100 NUS3116MT TYPICAL CHARACTERISTICS - BJT 90 Cobo, OUTPUT CAPACITANCE (pF) Cibo


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PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547
2008 - NUS5531MT

Abstract: No abstract text available
Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package This device integrates one , −12 V Gate−to−Source Voltage VGS ±8.0 V ID − 5.47 A Parameter , http://onsemi.com 7 1E+00 1E+01 1E+02 1E+03 NUS5531MT TYPICAL CHARACTERISTICS − BJT , . Saturation Region http://onsemi.com 8 100 NUS5531MT TYPICAL CHARACTERISTICS − BJT 170 Cobo


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PDF NUS5531MT NUS5531MT/D NUS5531MT
2012 - Not Available

Abstract: No abstract text available
Text: output for boost BJT Driver parameter configuration pin and auxiliary driver Rev. 0.2 iW3617 , ,700; 7,505,287; 7,589,983; 6,972,969; 7,724, 547 ; 7,876,582; 7,880,447; 7,974,109; 8,018,743; 8,049


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PDF iW3617 120VAC/230VAC IEC61000-3-2 100Hz/120Hz iW3617
2007 - NUS3116MT

Abstract: No abstract text available
Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce(sat) Transistors, 3x3Ămm WDFN Package This device integrates one high , Drain-to-Source Voltage VDSS -12 V Gate-to-Source Voltage VGS ±8.0 V ID - 5.47 A , (sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS - BJT 0.45 0.40 0.35 , Region http://onsemi.com 8 100 NUS3116MT TYPICAL CHARACTERISTICS - BJT 90 Cobo, OUTPUT


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PDF NUS3116MT NUS3116MT/D NUS3116MT
2012 - Not Available

Abstract: No abstract text available
Text: VCB Analog Input Boost output voltage feedback input Base drive output for boost BJT Driver , ,969; 7,724, 547 ; 7,876,582; 7,880,447; 7,974,109; 8,018,743; 8,049,481; 7,936,132; 7,433,211; 6,944,034


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PDF iW3616 120VAC/230VAC IEC61000-3-2 iW3616
2011 - USES OF BJT 547

Abstract: K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC
Text: = 5mA I = 3mA I = 5mA 0.7*VD 0.3*VD 10 2216 1783 547 1260 8 550 1370 66 602 1 V pF mV ns , Typical values for ID and IA are listed in the Electrical Characteristics table. IE depends on the BJT , Input-Output Transfer Function). The second component of the loop interface is the external NPN transistor ( BJT , ). Since the BJT operates over the wide current range, spanning at least 4 - 20 mA, it is necessary , Circuit Examples. The NPN BJT should not be replaced with an N-channel FET (Field Effect Transistor) for


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PDF DAC161P997 DAC161P997 16-bit 4-20mA SNAS515C USES OF BJT 547 K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC
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