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Search Stock (3)

  You can filter table by choosing multiple options from dropdownShowing 3 results of 3
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BUZ900P TT Electronics Power and Hybrid / Semelab Limited Newark element14 20 $11.40 $7.48
BUZ900P TT Electronics Power and Hybrid / Semelab Limited element14 Asia-Pacific 19 $15.42 $9.96
BUZ900P TT Electronics Power and Hybrid / Semelab Limited Farnell element14 34 £10.68 £9.24

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BUZ900P datasheet (4)

Part Manufacturer Description Type PDF
BUZ900P Magnatec N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. Original PDF
BUZ900P Magnatec N-channel power MOSFET for audio applications, 160V Original PDF
BUZ900P Magnatec N-Channel Power Mosfet Scan PDF
BUZ900P Others Shortform Datasheet & Cross References Data Scan PDF

BUZ900P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BUZ900P

Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
Text: i r^ IIVIAGIM/V 'tec BUZ900P BUZ901P MECHANICAL DATA Dimensions in mm (inches) ► f4 , MAXIMUM RATINGS 0~case = 25° C unless otherwise stated) BUZ900P - BUZ901P vdsx Drain - Source Voltage , Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 BUZ900P IVIAC3I\I A , Min. | Typ. | Max. Unit BV0SX Drain - Source Breakdown Voltage VGS = -10V lD = 10mA BUZ900P 160 V , VG0 = 0 b =8A 12 V lDSX Drain - Source Cut-Off Current VGS=-10V VDS = 160V BUZ900P 10 mA VDS


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PDF BUZ900P BUZ901P BUZ905P BUZ906P L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
1998 - BUZ901P

Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm (inches) (0.185) (0.209 , otherwise stated) VDSX Drain ­ Source Voltage BUZ900P 160V BUZ901P 200V VGSS Gate ­ Source , . Telex: 341927. Fax (01455) 552612. 125W ­55 to 150°C 150°C 1.0°C/W Prelim. 10/94 BUZ900P , Test Conditions Min. VGS = ­10V BUZ900P BUZ901P 200 Gate ­ Source Breakdown Voltage , Current VGS = ­10V VDS = 10V Forward Transfer Admittance V 10 BUZ900P mA VDS =


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PDF BUZ900P BUZ901P BUZ901P BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
Not Available

Abstract: No abstract text available
Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm (inches) (0.185) (0.209 , RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage BUZ900P 160V , °C 150°C 1.0°C/W Prelim. 10/94 BUZ900P BUZ901P MAGNA TEC STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. VGS = –10V BUZ900P , Transfer Admittance VDS = 10V V 10 BUZ900P mA VDS = 200V 10 BUZ901P yfs* V


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PDF BUZ900P BUZ901P
NO10V

Abstract: buz901 buz906p BUZ901P
Text: BUZ900P BUZ901P M E C H A N IC A L DATA Dimensions in mm (inches) 4.69 (0.185) 5.31 (0.209 , (Tcase = 25°C unless otherwise stated) Characteristic b v dsx BUZ900P BUZ901P Test Conditions VGS , Voltage BUZ900P BUZ901 P Iq - i 1 OOjaA lD = 1 0 0 m A il 00 b v gss o II V GS(OFF) V D , Cut-Off Current BUZ900P v GS = - 10V o > o VDS = 200V BUZ901 P C O < mA 10 0.7 2 S , TEC Typical Output Characteristics 9 fi\ -p\ - - Tc = 25'C BUZ900P BUZ901P Typical Output


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PDF BUZ900P BUZ901P BUZ905P BUZ906P Z900P Z901P NO10V buz901 buz906p BUZ901P
Not Available

Abstract: No abstract text available
Text: 160V BUZ900P Vds= 200V BUZ901P lg = ± 100uA Vd s = 0 typ max BUZ900P BUZ901P v GS(off


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PDF BUZ905P BUZ906P O-247
Not Available

Abstract: No abstract text available
Text: BUZ900P Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V


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PDF BUZ900P
BUZ900

Abstract: TO-3P BUZ900P BUZ901P BUZ902DP to-3 BUZ905 SOT-227 BUZ900D BUZ908DP
Text: Magnatec. Magnatec Semelab SEMELAB - . 105318, , . , 53 / +7 (495) 788-15-96, 975-82-92 W www.apls.ru E semelab@apls.ru N- , max, , , , BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S 160 200 160 200 160 200 160 200 160 200 8 8 16 16 8 8 16 16 32 32 125 125 250 250 125 125 250 250 500 500 TO3 TO3 TO3 TO3 TO247 TO247 TO3P TO3P SOT227 SOT227 BUZ902 BUZ903 BUZ902D


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PDF BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S BUZ900 TO-3P BUZ900P BUZ901P BUZ902DP to-3 BUZ905 SOT-227 BUZ900D BUZ908DP
Not Available

Abstract: No abstract text available
Text: DIODE N - CHANNEL AS BUZ900P & BUZ901P MAGNATEC introduces their latest addition to power devices


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PDF BUZ900P BUZ901P
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: 2SK135 BUZ900D TO 3 160V 16A 250W N 2 X 2SK135 BUZ900P T024 7 160V 8A 125W N 2SK1058 BUZ901 TO 3 200V , maximum ratings 0~case = 25°C unless otherwise stated) - BUZ900P BUZ901P VDSX Drain - Source Voltage , Characteristic Test Conditions Min. Typ. Max. Unit bvdsx Drain - Source Breakdown Voltage VGS = -10V BUZ900P , Current vGS = -iov BUZ900P mA 1 VDS = 200V j 10 BUZ901P |yfs* Forward Transfer , AS BUZ900P & BUZ901P absolute maximum ratings H~case = 25°C unless otherwise stated) BU2905P


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PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Text: SEMELAB pic Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSS_on ID Pd June 1998 Ver. 1.1 Ciss_pf Qg_nC Td_on Tr Td_oft Tf BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P BUZ900X4S BUZ901 BUZ901D BUZ901DP BUZ901P BUZ901X4S BUZ902 BUZ902D BUZ902P BUZ903 BUZ903D BUZ903DP BUZ903DP


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PDF BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM
BUZ901P

Abstract: buz900p BUZ906P
Text: Pin 1 - Gate Pin 2 - Source Pin 3 - Drain · N-CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P


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PDF BUZ905P BUZ906P BUZ900P BUZ901P -160V BUZ901P buz900p BUZ906P
Not Available

Abstract: No abstract text available
Text: €“ Source Pin 3 – Drain • N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P ABSOLUTE MAXIMUM


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PDF BUZ905P BUZ906P
1998 - BUZ900P

Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
Text: · N­CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless


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PDF BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: ZTX776 STTH806TTI IRF830 IRF840 ZTX851 ZTX853 BUZ900 BUZ900D BUZ900DP BUZ900P BUZ905 BUZ905D BUZ905DP


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PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
BUZ901P

Abstract: BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
Text: -247 Polarity: Industry Type: BUZ901 STI Type: BUZ900P Notes: Breakdown Voltage: 160 Continuous Current: 16 , : Industry Type: BUZ900P STI Type: BUZ901D Notes: Breakdown Voltage: 200 Continuous Current: 16 RDS


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PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 d44c3 buz90a BUZ77 buz94 DTS410 BUZ345 DTS107
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
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